JP2015525964A5 - - Google Patents
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- Publication number
- JP2015525964A5 JP2015525964A5 JP2015519373A JP2015519373A JP2015525964A5 JP 2015525964 A5 JP2015525964 A5 JP 2015525964A5 JP 2015519373 A JP2015519373 A JP 2015519373A JP 2015519373 A JP2015519373 A JP 2015519373A JP 2015525964 A5 JP2015525964 A5 JP 2015525964A5
- Authority
- JP
- Japan
- Prior art keywords
- bonding layer
- donor substrate
- substrate
- support substrate
- transfer process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 3
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 13
- 239000000463 material Substances 0.000 claims 4
- 230000003595 spectral effect Effects 0.000 claims 2
- 238000013518 transcription Methods 0.000 claims 2
- 230000035897 transcription Effects 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1201802 | 2012-06-26 | ||
| FR1201802A FR2992464B1 (fr) | 2012-06-26 | 2012-06-26 | Procede de transfert d'une couche |
| PCT/IB2013/001252 WO2014001869A1 (en) | 2012-06-26 | 2013-06-14 | Process for transferring a layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015525964A JP2015525964A (ja) | 2015-09-07 |
| JP2015525964A5 true JP2015525964A5 (enExample) | 2017-04-13 |
| JP6138931B2 JP6138931B2 (ja) | 2017-05-31 |
Family
ID=48782549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015519373A Active JP6138931B2 (ja) | 2012-06-26 | 2013-06-14 | 層を転写するためのプロセス |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9343351B2 (enExample) |
| EP (1) | EP2865004B1 (enExample) |
| JP (1) | JP6138931B2 (enExample) |
| KR (1) | KR102007315B1 (enExample) |
| CN (1) | CN104584203B (enExample) |
| FR (1) | FR2992464B1 (enExample) |
| SG (1) | SG11201408606TA (enExample) |
| WO (1) | WO2014001869A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3007892B1 (fr) * | 2013-06-27 | 2015-07-31 | Commissariat Energie Atomique | Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive |
| US9966466B2 (en) * | 2016-08-08 | 2018-05-08 | Globalfoundries Inc. | Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof |
| CN108365083B (zh) * | 2018-02-07 | 2022-03-08 | 济南晶正电子科技有限公司 | 用于声表面波器件的复合压电衬底的制造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1351308B1 (en) * | 1996-08-27 | 2009-04-22 | Seiko Epson Corporation | Exfoliating method and transferring method of thin film device |
| US6291314B1 (en) * | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films using a release layer |
| TW452866B (en) * | 2000-02-25 | 2001-09-01 | Lee Tien Hsi | Manufacturing method of thin film on a substrate |
| FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
| FR2855909B1 (fr) * | 2003-06-06 | 2005-08-26 | Soitec Silicon On Insulator | Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat |
| US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
| FR2860249B1 (fr) * | 2003-09-30 | 2005-12-09 | Michel Bruel | Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium |
| US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
| DE102006007293B4 (de) * | 2006-01-31 | 2023-04-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper |
| JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
| JP2008153411A (ja) * | 2006-12-18 | 2008-07-03 | Shin Etsu Chem Co Ltd | Ｓｏｉ基板の製造方法 |
| EP1986229A1 (en) * | 2007-04-27 | 2008-10-29 | S.O.I.T.E.C. Silicon on Insulator Technologies | Method for manufacturing compound material wafer and corresponding compound material wafer |
| US20090179160A1 (en) * | 2008-01-16 | 2009-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor substrate manufacturing apparatus |
| KR20100008123A (ko) * | 2008-07-15 | 2010-01-25 | 고려대학교 산학협력단 | 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자 |
| JP5496608B2 (ja) * | 2008-11-12 | 2014-05-21 | 信越化学工業株式会社 | Ｓｏｉ基板の作製方法 |
| JP5643509B2 (ja) * | 2009-12-28 | 2014-12-17 | 信越化学工業株式会社 | 応力を低減したｓｏｓ基板の製造方法 |
| CN101866874B (zh) * | 2010-06-01 | 2013-05-22 | 中国科学院上海微系统与信息技术研究所 | 一种利用层转移技术制备绝缘体上锗硅材料的方法 |
-
2012
- 2012-06-26 FR FR1201802A patent/FR2992464B1/fr active Active
-
2013
- 2013-06-14 KR KR1020147036692A patent/KR102007315B1/ko active Active
- 2013-06-14 JP JP2015519373A patent/JP6138931B2/ja active Active
- 2013-06-14 WO PCT/IB2013/001252 patent/WO2014001869A1/en not_active Ceased
- 2013-06-14 CN CN201380033314.5A patent/CN104584203B/zh active Active
- 2013-06-14 EP EP13735407.2A patent/EP2865004B1/en active Active
- 2013-06-14 SG SG11201408606TA patent/SG11201408606TA/en unknown
- 2013-06-14 US US14/409,361 patent/US9343351B2/en active Active
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