Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
  • H10P90/19—Preparing inhomogeneous wafers
  • H10P90/1904—Preparing vertically inhomogeneous wafers
  • H10P90/1906—Preparing SOI wafers
  • H10P90/1914—Preparing SOI wafers using bonding
  • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
  • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6302—Non-deposition formation processes
  • H10P14/6322—Formation by thermal treatments
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
  • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
  • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/10—Isolation regions comprising dielectric materials
  • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Recrystallisation Techniques (AREA)
• Ceramic Products (AREA)
• Thermal Transfer Or Thermal Recording In General (AREA)
• Electromagnetism (AREA)
• Heat Sensitive Colour Forming Recording (AREA)

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Citations (6)

Family Cites Families (11)

• 2012
  • 2012-06-26 FR FR1201802A patent/FR2992464B1/fr active Active
• 2013
  • 2013-06-14 KR KR1020147036692A patent/KR102007315B1/ko active Active
  • 2013-06-14 JP JP2015519373A patent/JP6138931B2/ja active Active
  • 2013-06-14 WO PCT/IB2013/001252 patent/WO2014001869A1/en not_active Ceased
  • 2013-06-14 CN CN201380033314.5A patent/CN104584203B/zh active Active
  • 2013-06-14 EP EP13735407.2A patent/EP2865004B1/en active Active
  • 2013-06-14 SG SG11201408606TA patent/SG11201408606TA/en unknown
  • 2013-06-14 US US14/409,361 patent/US9343351B2/en active Active

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