KR102007315B1 - 층을 전사하기 위한 프로세스 - Google Patents

층을 전사하기 위한 프로세스 Download PDF

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Publication number
KR102007315B1
KR102007315B1 KR1020147036692A KR20147036692A KR102007315B1 KR 102007315 B1 KR102007315 B1 KR 102007315B1 KR 1020147036692 A KR1020147036692 A KR 1020147036692A KR 20147036692 A KR20147036692 A KR 20147036692A KR 102007315 B1 KR102007315 B1 KR 102007315B1
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South Korea
Prior art keywords
bonding layer
substrate
donor substrate
embrittlement
support substrate
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English (en)
Korean (ko)
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KR20150023514A (ko
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미쉘 브뤼엘
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소이텍
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Ceramic Products (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Electromagnetism (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
KR1020147036692A 2012-06-26 2013-06-14 층을 전사하기 위한 프로세스 Active KR102007315B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1201802 2012-06-26
FR1201802A FR2992464B1 (fr) 2012-06-26 2012-06-26 Procede de transfert d'une couche
PCT/IB2013/001252 WO2014001869A1 (en) 2012-06-26 2013-06-14 Process for transferring a layer

Publications (2)

Publication Number Publication Date
KR20150023514A KR20150023514A (ko) 2015-03-05
KR102007315B1 true KR102007315B1 (ko) 2019-08-06

Family

ID=48782549

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147036692A Active KR102007315B1 (ko) 2012-06-26 2013-06-14 층을 전사하기 위한 프로세스

Country Status (8)

Country Link
US (1) US9343351B2 (enExample)
EP (1) EP2865004B1 (enExample)
JP (1) JP6138931B2 (enExample)
KR (1) KR102007315B1 (enExample)
CN (1) CN104584203B (enExample)
FR (1) FR2992464B1 (enExample)
SG (1) SG11201408606TA (enExample)
WO (1) WO2014001869A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3007892B1 (fr) * 2013-06-27 2015-07-31 Commissariat Energie Atomique Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive
US9966466B2 (en) * 2016-08-08 2018-05-08 Globalfoundries Inc. Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof
CN108365083B (zh) * 2018-02-07 2022-03-08 济南晶正电子科技有限公司 用于声表面波器件的复合压电衬底的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020146893A1 (en) 1996-08-27 2002-10-10 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US6486008B1 (en) 2000-02-25 2002-11-26 John Wolf International, Inc. Manufacturing method of a thin film on a substrate
US20050048738A1 (en) 2003-08-28 2005-03-03 Shaheen Mohamad A. Arrangements incorporating laser-induced cleaving
WO2010055857A1 (ja) 2008-11-12 2010-05-20 信越化学工業株式会社 Ｓｏｉ基板の作製方法
JP2011138932A (ja) 2009-12-28 2011-07-14 Shin-Etsu Chemical Co Ltd 応力を低減したｓｏｓ基板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291314B1 (en) * 1998-06-23 2001-09-18 Silicon Genesis Corporation Controlled cleavage process and device for patterned films using a release layer
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2855909B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
FR2860249B1 (fr) * 2003-09-30 2005-12-09 Michel Bruel Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
JP5284576B2 (ja) * 2006-11-10 2013-09-11 信越化学工業株式会社 半導体基板の製造方法
JP2008153411A (ja) * 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Ｓｏｉ基板の製造方法
EP1986229A1 (en) * 2007-04-27 2008-10-29 S.O.I.T.E.C. Silicon on Insulator Technologies Method for manufacturing compound material wafer and corresponding compound material wafer
US20090179160A1 (en) * 2008-01-16 2009-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate manufacturing apparatus
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
CN101866874B (zh) * 2010-06-01 2013-05-22 中国科学院上海微系统与信息技术研究所 一种利用层转移技术制备绝缘体上锗硅材料的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020146893A1 (en) 1996-08-27 2002-10-10 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US6486008B1 (en) 2000-02-25 2002-11-26 John Wolf International, Inc. Manufacturing method of a thin film on a substrate
US20050048738A1 (en) 2003-08-28 2005-03-03 Shaheen Mohamad A. Arrangements incorporating laser-induced cleaving
WO2010055857A1 (ja) 2008-11-12 2010-05-20 信越化学工業株式会社 Ｓｏｉ基板の作製方法
JP2011138932A (ja) 2009-12-28 2011-07-14 Shin-Etsu Chemical Co Ltd 応力を低減したｓｏｓ基板

Also Published As

Publication number Publication date
JP6138931B2 (ja) 2017-05-31
CN104584203B (zh) 2018-03-20
EP2865004A1 (en) 2015-04-29
WO2014001869A1 (en) 2014-01-03
CN104584203A (zh) 2015-04-29
US20150187638A1 (en) 2015-07-02
JP2015525964A (ja) 2015-09-07
FR2992464A1 (fr) 2013-12-27
FR2992464B1 (fr) 2015-04-03
KR20150023514A (ko) 2015-03-05
EP2865004B1 (en) 2020-07-29
SG11201408606TA (en) 2015-01-29
US9343351B2 (en) 2016-05-17

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