RU2016134449A - Элемент солнечной батареи и способ изготовления элемента солнечной батареи - Google Patents
Элемент солнечной батареи и способ изготовления элемента солнечной батареи Download PDFInfo
- Publication number
- RU2016134449A RU2016134449A RU2016134449A RU2016134449A RU2016134449A RU 2016134449 A RU2016134449 A RU 2016134449A RU 2016134449 A RU2016134449 A RU 2016134449A RU 2016134449 A RU2016134449 A RU 2016134449A RU 2016134449 A RU2016134449 A RU 2016134449A
- Authority
- RU
- Russia
- Prior art keywords
- film
- firing
- semiconductor substrate
- conductive paste
- heat treatment
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000010438 heat treatment Methods 0.000 claims 7
- 238000010304 firing Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Claims (11)
1. Способ изготовления элемента солнечной батареи, включающий в себя этапы, на которых
на полупроводниковой подложке с проводимостью первого типа формируют с получением слоистой структуры слой с проводимостью второго типа и противоотражательную пленку;
в заданном месте противоотражательной пленки наносят проводящую пасту, содержащую проводящие частицы и стеклообразную фритту;
осуществляют обжиг полупроводниковой подложки с нанесенной на нее проводящей пастой; и
формируют электрод, проходящий сквозь противоотражательную пленку и электрически соединенный со слоем с проводимостью второго типа,
причем полупроводниковую подложку с нанесенной на нее проводящей пастой последовательно подвергают тепловой обработке сразу после обжига, вместо того, чтобы вернуть ее к комнатной температуре.
2. Способ по п. 1, в котором на этапе, на котором полупроводниковую подложку с нанесенной на нее проводящей пастой последовательно подвергают тепловой обработке сразу после обжига, вместо того, чтобы вернуть ее к комнатной температуре, температура нагрева составляет предпочтительно от 300°C до 500°C.
3. Способ по п. 1 или 2, в котором на этапе, на котором полупроводниковую подложку с нанесенной на нее проводящей пастой последовательно подвергают тепловой обработке сразу после обжига, вместо того, чтобы вернуть ее к комнатной температуре, время нагрева составляет от 1 до 60 секунд.
4. Способ по п. 1 или 2, в котором противоотражательная пленка представляет собой пленку, полученную путем наслаивания любой пленки, выбранной из группы, включающей в себя: пленку SiO2, пленку Al2O3 и пленку SiN, или выбранной произвольным образом комбинации указанных пленок.
5. Способ по п. 1 или 2, в котором, когда полупроводниковую подложку с нанесенной на нее проводящей пастой последовательно подвергают тепловой обработке сразу после обжига, вместо того, чтобы вернуть ее к комнатной температуре, этапы от обжига до тепловой обработки выполняют последовательно в одном устройстве.
6. Элемент солнечной батареи, изготовленный способом по любому из пп. 1-5.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014016450A JP6030587B2 (ja) | 2014-01-31 | 2014-01-31 | 太陽電池セルの製造方法 |
JP2014-016450 | 2014-01-31 | ||
PCT/JP2014/081746 WO2015114937A1 (ja) | 2014-01-31 | 2014-12-01 | 太陽電池セルおよび太陽電池セルの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
RU2016134449A true RU2016134449A (ru) | 2018-03-05 |
Family
ID=53756531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2016134449A RU2016134449A (ru) | 2014-01-31 | 2014-12-01 | Элемент солнечной батареи и способ изготовления элемента солнечной батареи |
Country Status (9)
Country | Link |
---|---|
US (1) | US9691918B2 (ru) |
EP (1) | EP3101696B1 (ru) |
JP (1) | JP6030587B2 (ru) |
KR (1) | KR102154890B1 (ru) |
CN (1) | CN105934828B (ru) |
MY (1) | MY186101A (ru) |
RU (1) | RU2016134449A (ru) |
TW (1) | TWI649883B (ru) |
WO (1) | WO2015114937A1 (ru) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3333901B1 (en) * | 2016-10-05 | 2020-12-30 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a high photoelectric conversion efficiency solar cell |
KR101943711B1 (ko) | 2016-10-10 | 2019-01-29 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR102008186B1 (ko) | 2017-02-09 | 2019-08-07 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
CN107993940A (zh) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | p型太阳能电池的制备方法 |
CN108198877A (zh) * | 2018-01-29 | 2018-06-22 | 泰州隆基乐叶光伏科技有限公司 | 一种单晶掺镓太阳电池及其制备方法 |
KR102004650B1 (ko) * | 2018-02-28 | 2019-10-01 | 재단법인대구경북과학기술원 | 태양전지용 메타소재 전극 및 이의 제조방법 |
CN113078240B (zh) * | 2021-03-29 | 2023-07-14 | 无锡奥特维旭睿科技有限公司 | N型TOPCon电池的烧结方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5818976A (ja) * | 1981-07-27 | 1983-02-03 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
US5320684A (en) * | 1992-05-27 | 1994-06-14 | Mobil Solar Energy Corporation | Solar cell and method of making same |
JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
JP4761706B2 (ja) * | 2003-12-25 | 2011-08-31 | 京セラ株式会社 | 光電変換装置の製造方法 |
JP5376752B2 (ja) | 2006-04-21 | 2013-12-25 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池 |
JP2008308345A (ja) * | 2007-06-12 | 2008-12-25 | Sanyo Electric Co Ltd | 半導体材料の再生装置、太陽電池の製造方法および製造装置 |
US8241945B2 (en) * | 2010-02-08 | 2012-08-14 | Suniva, Inc. | Solar cells and methods of fabrication thereof |
KR101246686B1 (ko) * | 2010-03-19 | 2013-03-21 | 제일모직주식회사 | 태양전지 전극용 페이스트 및 이를 이용한 태양전지 |
JP5179677B1 (ja) * | 2012-03-14 | 2013-04-10 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 太陽電池セルの製造方法 |
-
2014
- 2014-01-31 JP JP2014016450A patent/JP6030587B2/ja active Active
- 2014-12-01 RU RU2016134449A patent/RU2016134449A/ru not_active Application Discontinuation
- 2014-12-01 WO PCT/JP2014/081746 patent/WO2015114937A1/ja active Application Filing
- 2014-12-01 CN CN201480074059.3A patent/CN105934828B/zh active Active
- 2014-12-01 MY MYPI2016702512A patent/MY186101A/en unknown
- 2014-12-01 KR KR1020167017876A patent/KR102154890B1/ko active IP Right Grant
- 2014-12-01 US US15/110,570 patent/US9691918B2/en active Active
- 2014-12-01 EP EP14880771.2A patent/EP3101696B1/en active Active
-
2015
- 2015-01-30 TW TW104103208A patent/TWI649883B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI649883B (zh) | 2019-02-01 |
KR20160114580A (ko) | 2016-10-05 |
CN105934828A (zh) | 2016-09-07 |
MY186101A (en) | 2021-06-22 |
EP3101696A4 (en) | 2017-08-30 |
JP6030587B2 (ja) | 2016-11-24 |
TW201535756A (zh) | 2015-09-16 |
JP2015144162A (ja) | 2015-08-06 |
WO2015114937A1 (ja) | 2015-08-06 |
KR102154890B1 (ko) | 2020-09-10 |
EP3101696B1 (en) | 2020-08-26 |
US9691918B2 (en) | 2017-06-27 |
US20160329442A1 (en) | 2016-11-10 |
EP3101696A1 (en) | 2016-12-07 |
CN105934828B (zh) | 2017-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2016134449A (ru) | Элемент солнечной батареи и способ изготовления элемента солнечной батареи | |
JP2018011066A (ja) | シリコン基板における拡散領域の形成方法 | |
JP2014187166A5 (ru) | ||
JP2016039328A5 (ru) | ||
JP2012119667A5 (ja) | 半導体装置の作製方法 | |
JP2012009837A5 (ja) | 半導体装置の作製方法 | |
WO2017058004A8 (en) | Method of manufacturing a solar cell | |
JP2011009697A5 (ru) | ||
WO2016068711A3 (en) | Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions | |
JP2012033474A5 (ja) | 蓄電装置の作製方法 | |
JP2013149953A5 (ru) | ||
JP2013038396A5 (ru) | ||
WO2009063973A1 (ja) | 光電変換素子用電極基板、光電変換素子用電極基板の製造方法、および光電変換素子 | |
RU2013105449A (ru) | Солнечная батарея и способ ее изготовления | |
WO2017100393A3 (en) | Photovoltaic devices and method of manufacturing | |
RU2010137796A (ru) | Солнечный элемент и способ и аппарат для его изготовления | |
JP2014220180A5 (ru) | ||
JP2011181904A5 (ru) | ||
JP2015065424A5 (ja) | 半導体装置の作製方法 | |
WO2012118771A3 (en) | Improved thin-film photovoltaic devices and methods of manufacture | |
EP3104417A3 (en) | Method of manufacturing a protective film for a solar cell | |
JP2013540358A5 (ru) | ||
JP2011096651A5 (ja) | 電極の作製方法及び該電極を有する蓄電装置の作製方法 | |
JP2016152269A5 (ru) | ||
JP2017519326A5 (ru) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA93 | Acknowledgement of application withdrawn (no request for examination) |
Effective date: 20171204 |