JP2014229779A5 - - Google Patents

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Publication number
JP2014229779A5
JP2014229779A5 JP2013109015A JP2013109015A JP2014229779A5 JP 2014229779 A5 JP2014229779 A5 JP 2014229779A5 JP 2013109015 A JP2013109015 A JP 2013109015A JP 2013109015 A JP2013109015 A JP 2013109015A JP 2014229779 A5 JP2014229779 A5 JP 2014229779A5
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JP
Japan
Prior art keywords
photodetector
metal layer
semiconductor
convex part
organic semiconductor
Prior art date
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Application number
JP2013109015A
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English (en)
Japanese (ja)
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JP2014229779A (ja
JP6245495B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2013109015A priority Critical patent/JP6245495B2/ja
Priority claimed from JP2013109015A external-priority patent/JP6245495B2/ja
Priority to PCT/JP2014/059060 priority patent/WO2014188784A1/ja
Publication of JP2014229779A publication Critical patent/JP2014229779A/ja
Priority to US14/936,244 priority patent/US10290823B2/en
Publication of JP2014229779A5 publication Critical patent/JP2014229779A5/ja
Application granted granted Critical
Publication of JP6245495B2 publication Critical patent/JP6245495B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013109015A 2013-05-23 2013-05-23 光検出器 Expired - Fee Related JP6245495B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013109015A JP6245495B2 (ja) 2013-05-23 2013-05-23 光検出器
PCT/JP2014/059060 WO2014188784A1 (ja) 2013-05-23 2014-03-20 光検出器
US14/936,244 US10290823B2 (en) 2013-05-23 2015-11-09 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013109015A JP6245495B2 (ja) 2013-05-23 2013-05-23 光検出器

Publications (3)

Publication Number Publication Date
JP2014229779A JP2014229779A (ja) 2014-12-08
JP2014229779A5 true JP2014229779A5 (enExample) 2016-07-07
JP6245495B2 JP6245495B2 (ja) 2017-12-13

Family

ID=51933350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013109015A Expired - Fee Related JP6245495B2 (ja) 2013-05-23 2013-05-23 光検出器

Country Status (3)

Country Link
US (1) US10290823B2 (enExample)
JP (1) JP6245495B2 (enExample)
WO (1) WO2014188784A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11231544B2 (en) 2015-11-06 2022-01-25 Magic Leap, Inc. Metasurfaces for redirecting light and methods for fabricating
CA3022876A1 (en) 2016-05-06 2017-11-09 Magic Leap, Inc. Metasurfaces with asymmetric gratings for redirecting light and methods for fabricating
US11011716B2 (en) 2016-08-02 2021-05-18 King Abdullah University Of Science And Technology Photodetectors and photovoltaic devices
KR102553802B1 (ko) 2017-01-27 2023-07-07 매직 립, 인코포레이티드 상이하게 배향된 나노빔들을 갖는 메타표면들에 의해 형성된 회절 격자
JP6928931B2 (ja) * 2017-05-08 2021-09-01 国立大学法人電気通信大学 計測用デバイス及び計測センサ
JP6918631B2 (ja) * 2017-08-18 2021-08-11 浜松ホトニクス株式会社 光検出素子
JP7084020B2 (ja) * 2018-01-19 2022-06-14 国立大学法人電気通信大学 分光用デバイス、分光器、及び分光測定方法
JP6979929B2 (ja) * 2018-06-25 2021-12-15 浜松ホトニクス株式会社 光検出器
CN109524486B (zh) * 2018-09-28 2022-09-23 暨南大学 一种电读出光学传感器
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
JP6980292B2 (ja) * 2019-10-29 2021-12-15 國立台灣大學 光検出器
JP7488761B2 (ja) * 2020-12-25 2024-05-22 浜松ホトニクス株式会社 光検出器
CN115810680B (zh) * 2022-09-21 2023-09-26 广东工业大学 一种局域场增强的光电导型高速光电探测器
CN117650190B (zh) * 2023-12-19 2024-06-14 广东工业大学 一种适用于非偏振光的等离激元电极光电探测器

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US6946597B2 (en) * 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
JP4583025B2 (ja) * 2003-12-18 2010-11-17 Jx日鉱日石エネルギー株式会社 ナノアレイ電極の製造方法およびそれを用いた光電変換素子
US8310373B2 (en) * 2005-10-19 2012-11-13 Schweitzer Engineering Laboratories, Inc. System, a tool and a method for communicating with a faulted circuit indicator using a display
US7635600B2 (en) * 2005-11-16 2009-12-22 Sharp Laboratories Of America, Inc. Photovoltaic structure with a conductive nanowire array electrode
US7960717B2 (en) * 2005-12-29 2011-06-14 E.I. Du Pont De Nemours And Company Electronic device and process for forming same
JP4772585B2 (ja) * 2006-05-10 2011-09-14 浜松ホトニクス株式会社 光検出器
US7955889B1 (en) * 2006-07-11 2011-06-07 The Trustees Of Princeton University Organic photosensitive cells grown on rough electrode with nano-scale morphology control
CN101675117A (zh) * 2007-03-05 2010-03-17 富士胶片株式会社 光致抗蚀用化合物、光致抗蚀液及使用其的蚀刻方法
WO2009013285A1 (en) * 2007-07-25 2009-01-29 Polymers Crc Ltd. Solar cell and method for preparation thereof
US20110039459A1 (en) * 2009-08-11 2011-02-17 Yancey Jerry W Solderless carbon nanotube and nanowire electrical contacts and methods of use thereof
JP5515658B2 (ja) * 2009-11-13 2014-06-11 コニカミノルタ株式会社 有機太陽電池素子及び有機太陽電池素子の製造方法
US9372283B2 (en) * 2009-11-13 2016-06-21 Babak NIKOOBAKHT Nanoengineered devices based on electro-optical modulation of the electrical and optical properties of plasmonic nanoparticles
US8859423B2 (en) * 2010-08-11 2014-10-14 The Arizona Board Of Regents On Behalf Of The University Of Arizona Nanostructured electrodes and active polymer layers
US9401442B2 (en) * 2010-09-01 2016-07-26 Iowa State University Research Foundation, Inc. Textured micrometer scale templates as light managing fabrication platform for organic solar cells
JP2012233779A (ja) * 2011-04-28 2012-11-29 Univ Of Tokyo Sprセンサとsprセンサを搭載する検査システム
EP2948984A4 (en) * 2013-01-25 2016-08-24 Univ Florida Novel IR IMAGE SENSOR WITH A SOLUTION-PROCESSED PBS LIGHT DETECTOR
US9331293B2 (en) * 2013-03-14 2016-05-03 Nutech Ventures Floating-gate transistor photodetector with light absorbing layer

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