WO2011065723A3 - 수직구조 반도체 발광소자 및 그 제조방법 - Google Patents

수직구조 반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
WO2011065723A3
WO2011065723A3 PCT/KR2010/008281 KR2010008281W WO2011065723A3 WO 2011065723 A3 WO2011065723 A3 WO 2011065723A3 KR 2010008281 W KR2010008281 W KR 2010008281W WO 2011065723 A3 WO2011065723 A3 WO 2011065723A3
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
vertical
semiconductor light
structure semiconductor
Prior art date
Application number
PCT/KR2010/008281
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English (en)
French (fr)
Other versions
WO2011065723A2 (ko
Inventor
성태연
Original Assignee
고려대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Priority to US13/505,618 priority Critical patent/US8932890B2/en
Publication of WO2011065723A2 publication Critical patent/WO2011065723A2/ko
Publication of WO2011065723A3 publication Critical patent/WO2011065723A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 수직구조 반도체 발광소자 및 그 제조방법에 관한 것으로, 보다 구체적으로는 금속후막 또는 금속호일로 구성되는 고성능 히트싱크 지지대를 구비하는 수직구조 반도체 발광소자에 관한 것이다. 본 발명에 따라 제조된 수직구조 반도체 발광소자는 고성능 히트싱크 지지대를 구비하여 미세한 마이크로 크랙(micro-crack)이 발생하지 않고, 열처리 및 측면 패시배이션 박막 등의 후속공정을 자유롭게 할 수 있어 열적 및 기계적 손상이 전혀 없는 고신뢰성의 발광소자이다.
PCT/KR2010/008281 2009-11-25 2010-11-23 수직구조 반도체 발광소자 및 그 제조방법 WO2011065723A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/505,618 US8932890B2 (en) 2009-11-25 2010-11-23 Vertical-structure semiconductor light emitting element and a production method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0114801 2009-11-25
KR1020090114801A KR101198758B1 (ko) 2009-11-25 2009-11-25 수직구조 반도체 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2011065723A2 WO2011065723A2 (ko) 2011-06-03
WO2011065723A3 true WO2011065723A3 (ko) 2011-09-29

Family

ID=44067079

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/008281 WO2011065723A2 (ko) 2009-11-25 2010-11-23 수직구조 반도체 발광소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US8932890B2 (ko)
KR (1) KR101198758B1 (ko)
TW (1) TWI520387B (ko)
WO (1) WO2011065723A2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847445B2 (en) * 2012-04-05 2017-12-19 Koninklijke Philips N.V. LED thin-film device partial singulation prior to substrate thinning or removal
FR2992466A1 (fr) * 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
JP5792694B2 (ja) * 2012-08-14 2015-10-14 株式会社東芝 半導体発光素子
TWI581462B (zh) * 2013-06-03 2017-05-01 晶元光電股份有限公司 發光元件及其製造方法
CN104241491B (zh) * 2013-06-07 2018-12-28 晶元光电股份有限公司 发光元件及其制造方法
DE102013221788B4 (de) * 2013-10-28 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Kontaktelements und eines optoelektronischen Bauelements
KR102325514B1 (ko) * 2015-02-26 2021-11-15 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN108123142B (zh) 2016-11-28 2022-01-04 财团法人工业技术研究院 抗腐蚀结构及包含其抗腐蚀结构的燃料电池
US11189518B2 (en) * 2019-11-15 2021-11-30 Advanced Semiconductor Engineering, Inc. Method of processing a semiconductor wafer
KR20220103405A (ko) 2021-01-15 2022-07-22 주식회사 아이오지 다층 박막 액상 에피택셜 장치 및 그 방법
CN114497292B (zh) * 2021-12-24 2023-05-09 华灿光电（浙江）有限公司 三基色发光二极管芯片及其制备方法
KR102597905B1 (ko) * 2022-10-24 2023-11-03 웨이브로드 주식회사 그룹3족 질화물 반도체 템플릿의 제조 방법 및 이에 의해 제조된 그룹3족 질화물 반도체 템플릿
KR102649705B1 (ko) * 2022-09-14 2024-03-20 웨이브로드 주식회사 본딩층의 품질이 개선된 그룹3족 질화물 반도체 템플릿의 제조 방법
KR102566048B1 (ko) * 2022-09-19 2023-08-14 웨이브로드 주식회사 반도체 발광 소자용 에피택시 다이, 이를 포함하는 반도체 발광 소자 및 그 제조 방법
CN116544323B (zh) * 2023-07-06 2023-09-01 江西兆驰半导体有限公司 一种led芯片的制备方法及led芯片

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095959A (ja) * 2002-09-02 2004-03-25 Nichia Chem Ind Ltd 窒化物半導体発光素子
KR100609119B1 (ko) * 2005-05-04 2006-08-08 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자의 제조방법
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
KR20080047838A (ko) * 2006-11-27 2008-05-30 삼성전기주식회사 수직구조 질화물 반도체 발광 소자 및 제조방법
KR20080087135A (ko) * 2006-01-24 2008-09-30 로무 가부시키가이샤 질화물 반도체 발광 소자
KR20090116410A (ko) * 2008-05-07 2009-11-11 선문대학교 산학협력단 수직 전극구조를 갖는 발광소자 및 그 제조방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100462980B1 (ko) * 1999-09-13 2004-12-23 비쉐이 메저먼츠 그룹, 인코포레이티드 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정
US6895667B2 (en) * 2001-04-13 2005-05-24 The Trustees Of Princeton University Transfer of patterned metal by cold-welding
US6786390B2 (en) * 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
JP4217093B2 (ja) * 2003-03-27 2009-01-28 スタンレー電気株式会社 半導体発光素子及びその製造方法
US8034643B2 (en) * 2003-09-19 2011-10-11 Tinggi Technologies Private Limited Method for fabrication of a semiconductor device
US6806112B1 (en) * 2003-09-22 2004-10-19 National Chung-Hsing University High brightness light emitting diode
US7408566B2 (en) * 2003-10-22 2008-08-05 Oki Data Corporation Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device
KR100631840B1 (ko) * 2004-06-03 2006-10-09 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法
WO2007049939A1 (en) * 2005-10-29 2007-05-03 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
KR100649763B1 (ko) * 2005-12-09 2006-11-27 삼성전기주식회사 수직구조 질화물 발광소자의 제조방법
JP4933130B2 (ja) * 2006-02-16 2012-05-16 昭和電工株式会社 ＧａＮ系半導体発光素子およびその製造方法
JP2007221029A (ja) * 2006-02-20 2007-08-30 Sony Corp 半導体発光素子およびその製造方法
EP2041802B1 (en) * 2006-06-23 2013-11-13 LG Electronics Inc. Light emitting diode having vertical topology and method of making the same
US20080042149A1 (en) * 2006-08-21 2008-02-21 Samsung Electro-Mechanics Co., Ltd. Vertical nitride semiconductor light emitting diode and method of manufacturing the same
KR100809227B1 (ko) * 2006-10-27 2008-03-05 삼성전기주식회사 질화물 반도체 발광소자 및 제조 방법
EP2109156A4 (en) 2007-01-30 2010-02-24 Denki Kagaku Kogyo Kk LED LIGHT SOURCE UNIT
TWI411124B (zh) * 2007-07-10 2013-10-01 Delta Electronics Inc 發光二極體裝置及其製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095959A (ja) * 2002-09-02 2004-03-25 Nichia Chem Ind Ltd 窒化物半導体発光素子
KR100609119B1 (ko) * 2005-05-04 2006-08-08 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자의 제조방법
KR20080087135A (ko) * 2006-01-24 2008-09-30 로무 가부시키가이샤 질화물 반도체 발광 소자
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
KR20080047838A (ko) * 2006-11-27 2008-05-30 삼성전기주식회사 수직구조 질화물 반도체 발광 소자 및 제조방법
KR20090116410A (ko) * 2008-05-07 2009-11-11 선문대학교 산학협력단 수직 전극구조를 갖는 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
WO2011065723A2 (ko) 2011-06-03
KR20110058122A (ko) 2011-06-01
US20120220063A1 (en) 2012-08-30
TW201138168A (en) 2011-11-01
US8932890B2 (en) 2015-01-13
TWI520387B (zh) 2016-02-01
KR101198758B1 (ko) 2012-11-12

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