JP2014229779A - 光検出器 - Google Patents
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- JP2014229779A JP2014229779A JP2013109015A JP2013109015A JP2014229779A JP 2014229779 A JP2014229779 A JP 2014229779A JP 2013109015 A JP2013109015 A JP 2013109015A JP 2013109015 A JP2013109015 A JP 2013109015A JP 2014229779 A JP2014229779 A JP 2014229779A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 8
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 4
- 229930192474 thiophene Natural products 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 150000003577 thiophenes Chemical class 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 230000023077 detection of light stimulus Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 14
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】凸部を有する有機半導体20と、有機半導体20上に付加され、検出光の照射により電子が励起される局在プラズモン共鳴及び表面プラズモン共鳴の少なくとも一方のプラズモン共鳴を促進する金属層30と、金属層30に接合され、プラズモン共鳴により励起される電子を金属層30との接合部40aにおいて通過させる半導体40と、を備える。
【選択図】図1
Description
凸部を有する有機半導体と、
前記有機半導体上に付加され、検出光の照射により電子が励起される局在プラズモン共鳴及び表面プラズモン共鳴の少なくとも一方のプラズモン共鳴を促進する金属層と、
前記金属層に接合され、前記プラズモン共鳴により励起される電子を前記金属層との接合部において通過させる半導体と、
を備える。
かかる構成によると、プラズモン共鳴によって励起される電子が多くなることから検出感度の向上が図れる。また、有機半導体を容易に製作でき、入射角に依存することなく赤外線領域の光をも高感度で検出することが可能となる。
前記凹凸構造の凸部の高さは、前記検出光の波長以下の寸法で、かつ該凸部の太さの最大寸法が前記検出光の波長以下の寸法であってもよい。
図4は、実施例1に係る光検出器の概略構成を示す断面図である。図4の光検出器60は、無機半導体であるシリコン基板70の表面に、図1の有機半導体20及び半導体40を構成するPTCDA/CuPcからなる有機半導体部80が形成され、この有機半導体部80の凹凸構造の表面に図1の金属層30を構成するAu層90が形成されている。また、シリコン基板70の裏面には、出力電流を取り出すためのAl層100が形成されている。
図13は、実施例2に係る光検出器の概略構成を示す断面図である。本実施例の光検出器61は、図4の光検出器60において、シリコン基板70及びAl層100を導電性基板71に変更したものである。導電性基板71は、ポリイミド基板72上に透明電極(ITO:Indium Tin Oxide)73を蒸着して形成され、透明電極73上に有機半導体部80が形成されている。その他の構成は図4と同様であるので、図4と同様の構成要素には、同一参照符号を付して説明を省略する。
図14は、実施例3に係る光検出器の概略構成を示す断面図である。本実施例の光検出器62は、図4の光検出器60において、シリコン基板70及びAl層100を絶縁性基板であるガラス基板75及び金属接合部110に変更したものである。金属接合部110は、例えば白金(Pt)からなり、有機半導体部80の一部にオーミック接合して形成される。その他の構成は図4と同様であるので、図4と同様の構成要素には、同一参照符号を付して説明を省略する。
図15は、実施例4に係る光検出器の概略構成を示す断面図である。本実施例の光検出器63は、図4の光検出器60において、シリコン基板70上に直接、有機半導体20を凸状(柱状)に形成したものである。すなわち、図1の半導体40を、シリコン基板70としたものである。したがって、本実施の形態においては、Au層90が有機半導体20及びシリコン基板70に接触することになるので、局在プラズモン共鳴及び/又は表面プラズモン共鳴によってAu層90で励起された電子は、Au層90とシリコン基板70との接合部70aのショットキー障壁を乗り越えて、シリコン基板70を経てAl層100から取り出される。
20 有機半導体
30 金属層
40 半導体
40a 接合部
50 電流検出部
60、61、62、63 光検出器
70 シリコン基板
70a 接合部
71 導電性基板
72 ポリイミド基板
73 透明電極
75 ガラス基板
80 有機半導体部
80a 接合部
90 Au層
100 Al層
110 金属接合部
Claims (15)
- 凸部を有する有機半導体と、
前記有機半導体上に付加され、検出光の照射により電子が励起される局在プラズモン共鳴及び表面プラズモン共鳴の少なくとも一方のプラズモン共鳴を促進する金属層と、
前記金属層に接合され、前記プラズモン共鳴により励起される電子を前記金属層との接合部において通過させる半導体と、
を備える光検出器。 - 請求項1に記載の光検出器において、
前記金属層を含む凸部の高さは、前記検出光の波長以下の寸法で、該凸部の太さの最大寸法が前記検出光の波長以下の寸法である、ことを特徴とする光検出器。 - 請求項1又は2に記載の光検出器において、
前記半導体は有機半導体である、ことを特徴とする光検出器。 - 請求項1〜3のいずれか一項に記載の光検出器において、
前記半導体を支持する基板をさらに備える、ことを特徴とする光検出器。 - 請求項4に記載の光検出器において、
前記基板は半導体基板である、ことを特徴とする光検出器。 - 請求項4に記載の光検出器において、
前記基板は導電性基板である、ことを特徴とする光検出器。 - 請求項4に記載の光検出器において、
前記基板は絶縁性基板である、ことを特徴とする光検出器。 - 請求項1又は2に記載の光検出器において、
前記半導体は無機半導体である、ことを特徴とする光検出器 - 請求項1〜8のいずれか一項に記載の光検出器において、
前記金属層を含む凸部の高さが20nm以上である、ことを特徴とする光検出器。 - 請求項1〜8のいずれか一項に記載の光検出器において、
前記金属層を含む凸部の高さが50nm以上である、ことを特徴とする光検出器。 - 請求項1〜10のいずれか一項に記載の光検出器において、
前記金属層は、凸部と該凸部に隣接する凹部とを有する凹凸構造であって、
前記凹凸構造の凸部の高さは、前記検出光の波長以下の寸法で、かつ該凸部の太さの最大寸法が前記検出光の波長以下の寸法である、ことを特徴とする光検出器。 - 請求項1〜11のいずれか一項に記載の光検出器において、
前記金属層を含む凸部は、任意の形状に湾曲又は屈曲して形成されている、ことを特徴とする光検出器。 - 請求項1〜12のいずれか一項に記載の光検出器において、
前記有機半導体は、フタロシアニン系、チオフェン系、Alq3のいずれかからなる、ことを特徴とする光検出器。 - 請求項1〜13のいずれか一項に記載の光検出器において、
前記金属層は、Au、Pt、Al、Agのいずれかからなる、ことを特徴とする光検出器。 - 請求項1〜14のいずれか一項に記載の光検出器において、
前記半導体は、フタロシアニン系、チオフェン系、Alq3、シリコンのいずれかからなる、ことを特徴とする光検出器。
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JP2013109015A JP6245495B2 (ja) | 2013-05-23 | 2013-05-23 | 光検出器 |
PCT/JP2014/059060 WO2014188784A1 (ja) | 2013-05-23 | 2014-03-20 | 光検出器 |
US14/936,244 US10290823B2 (en) | 2013-05-23 | 2015-11-09 | Photodetector |
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JP2013109015A JP6245495B2 (ja) | 2013-05-23 | 2013-05-23 | 光検出器 |
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JP2014229779A true JP2014229779A (ja) | 2014-12-08 |
JP2014229779A5 JP2014229779A5 (ja) | 2016-07-07 |
JP6245495B2 JP6245495B2 (ja) | 2017-12-13 |
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WO (1) | WO2014188784A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018189523A (ja) * | 2017-05-08 | 2018-11-29 | 国立大学法人電気通信大学 | 計測用デバイス及び計測センサ |
JP2019036663A (ja) * | 2017-08-18 | 2019-03-07 | 浜松ホトニクス株式会社 | 光検出素子 |
JP2019128157A (ja) * | 2018-01-19 | 2019-08-01 | 国立大学法人電気通信大学 | 分光用デバイス、分光器、及び分光測定方法 |
JP2020004775A (ja) * | 2018-06-25 | 2020-01-09 | 浜松ホトニクス株式会社 | 光検出器 |
JP2021072310A (ja) * | 2019-10-29 | 2021-05-06 | 國立台灣大學 | 光検出器 |
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WO2017193012A1 (en) * | 2016-05-06 | 2017-11-09 | Magic Leap, Inc. | Metasurfaces with asymetric gratings for redirecting light and methods for fabricating |
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JP2021072310A (ja) * | 2019-10-29 | 2021-05-06 | 國立台灣大學 | 光検出器 |
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US10290823B2 (en) | 2019-05-14 |
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JP6245495B2 (ja) | 2017-12-13 |
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