JP2015516362A5 - - Google Patents

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Publication number
JP2015516362A5
JP2015516362A5 JP2015507196A JP2015507196A JP2015516362A5 JP 2015516362 A5 JP2015516362 A5 JP 2015516362A5 JP 2015507196 A JP2015507196 A JP 2015507196A JP 2015507196 A JP2015507196 A JP 2015507196A JP 2015516362 A5 JP2015516362 A5 JP 2015516362A5
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JP
Japan
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mesh
ceramic
per inch
precursor material
wires per
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JP2015507196A
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English (en)
Japanese (ja)
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JP2015516362A (ja
JP6159794B2 (ja
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Priority claimed from US13/842,878 external-priority patent/US9205571B2/en
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Publication of JP2015516362A5 publication Critical patent/JP2015516362A5/ja
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Publication of JP6159794B2 publication Critical patent/JP6159794B2/ja
Expired - Fee Related legal-status Critical Current
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JP2015507196A 2012-04-18 2013-04-18 平板状セラミックの焼結方法および装置 Expired - Fee Related JP6159794B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261635129P 2012-04-18 2012-04-18
US61/635,129 2012-04-18
US13/842,878 2013-03-15
US13/842,878 US9205571B2 (en) 2012-04-18 2013-03-15 Method and apparatus for sintering flat ceramics
PCT/US2013/037251 WO2013158932A1 (en) 2012-04-18 2013-04-18 Method and apparatus for sintering flat ceramics

Publications (3)

Publication Number Publication Date
JP2015516362A JP2015516362A (ja) 2015-06-11
JP2015516362A5 true JP2015516362A5 (enExample) 2016-05-12
JP6159794B2 JP6159794B2 (ja) 2017-07-05

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JP2015507196A Expired - Fee Related JP6159794B2 (ja) 2012-04-18 2013-04-18 平板状セラミックの焼結方法および装置

Country Status (6)

Country Link
US (1) US9205571B2 (enExample)
EP (1) EP2838867A1 (enExample)
JP (1) JP6159794B2 (enExample)
KR (1) KR20150008100A (enExample)
CN (1) CN104245628A (enExample)
WO (1) WO2013158932A1 (enExample)

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CN110411153B (zh) * 2019-07-16 2023-06-16 山东工业陶瓷研究设计院有限公司 一种薄壁中空陶瓷平板膜坯体的快速干燥方法
CN111072384A (zh) * 2019-12-27 2020-04-28 中国科学院上海硅酸盐研究所 一种紫外激发荧光陶瓷及其制备方法
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CN111302812A (zh) * 2020-03-31 2020-06-19 吴跃东 一种陶瓷基板的压烧校平方法
WO2023038151A1 (ja) * 2021-09-13 2023-03-16 デンカ株式会社 窒化ホウ素焼結体の製造方法及び窒化ホウ素焼結体
CN118125833A (zh) * 2024-03-07 2024-06-04 辽宁伊菲科技股份有限公司 一种预应力增强的Si3N4陶瓷基板及其制备方法

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