TW201731801A - 陶瓷結構體、其製造方法及半導體製造裝置用構件 - Google Patents

陶瓷結構體、其製造方法及半導體製造裝置用構件 Download PDF

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TW201731801A
TW201731801A TW106106367A TW106106367A TW201731801A TW 201731801 A TW201731801 A TW 201731801A TW 106106367 A TW106106367 A TW 106106367A TW 106106367 A TW106106367 A TW 106106367A TW 201731801 A TW201731801 A TW 201731801A
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heater electrode
electrode
ceramic structure
aln
ceramic
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TWI722121B (zh
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Kyohei Atsuji
Noboru Nishimura
Yuji Katsuda
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Ngk Insulators Ltd
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Abstract

一種陶瓷結構體10，係在圓盤狀AlN陶瓷基體12的內部包藏加熱器電極14而成者。加熱器電極14係使主成分的WC含有電阻率比AlN更低且熱膨脹係數更高的金屬填料(例如Ru或RuAl)而成者。AlN陶瓷基體12與加熱器電極14在40~1000℃之熱膨脹係數差的絕對值|△CTE|為0.35ppm/℃以下。

Description

陶瓷結構體、其製造方法及半導體製造裝置用構件
本發明係有關於一種陶瓷結構體、其製造方法及半導體製造裝置用構件。
將矽基板、玻璃基板、各種單結晶基板等的板狀材料進行精密加工來製造半導體等的元件和組件時，係使用許多附加熱器功能的半導體製造裝置用構件。作為此種半導體製造裝置用構件，專利文獻1係揭示一種在AlN陶瓷基體內部包藏加熱器電極(Heater Electrodes)而成者。該專利文獻1係揭示作為加熱器電極，使用含有碳化鎢(WC)之導電膏的燒結物、和使加熱器電極含有約5重量%~約30重量%的陶瓷材料時，因為加熱器電極與AlN陶瓷基體的熱膨脹係數為接近，乃是較佳。
先前技術文獻 專利文獻
[專利文獻1]日本特許第5032444號公報
但是，使用含有AlN陶瓷之WC作為加熱器電極的材料時，雖然因為加熱器電極與AlN陶瓷基體的熱膨脹係數 接近，使得在燒結時能夠不容易產生龜裂和裂紋，但是有以下的問題。亦即，將含有AlN陶瓷之WC使用作為加熱器電極的材料時，相較於不含有AlN陶瓷之WC，因為AlN為絕緣體，所以加熱器電極的電阻率變高即便施加相同電壓，發熱量亦變小。
本發明係為了解決如此的課題而進行，其目的係提供一種在AlN陶瓷基體內部包藏以WC作為主成分的加熱器電極之陶瓷結構體，在防止產生龜裂和裂紋之同時，發熱量較大者。
本發明的陶瓷結構體，係在AlN陶瓷基體表面或內部具備有加熱器電極之陶瓷結構體，前述加熱器電極係使主成分的WC含有電阻率比AlN更低且熱膨脹係數更高的金屬填料而成者，前述AlN陶瓷基體與前述加熱器電極在40~1000℃之熱膨脹係數差的絕對值|△CTE|為0.35ppm/℃以下。
本發明的半導體製造裝置用構件，係具有上述的陶瓷結構體。
本發明的陶瓷結構體之製造方法，係在氮化鋁的燒結體、預煅燒體或成形體之第1基體的一面，配置使在WC含有金屬填料而成之加熱器電極或加熱器電極前驅物，而且藉由在其上，層積氮化鋁的燒結體、預煅燒體或成形體之第2基體而成為積層體且將該積層體進行熱壓煅燒而得到陶瓷結構體。
在本發明的陶瓷結構體，因為具備使主成分的WC，含有電阻率比AlN更低且熱膨脹係數更高的金屬填料而成之加熱器電極，所以成為電阻率接近WC之值。因此，能夠使對加熱器電極施加預定電壓時的發熱量，成為與由WC所構成的熱器電極相同程度。又，AlN陶瓷基體與加熱器電極在40~1000℃之熱膨脹係數差的絕對值較小而為0.35ppm/℃以下。因此，能夠抑制在燒結時產生龜裂和裂紋。
因為本發明的半導體製造裝置用構件，係具備上述的陶瓷結構體者，所以能夠得到與使用該陶瓷結構體而得到的效果同樣之效果。
本發明的陶瓷結構體之製造方法，係適合於製造上述的陶瓷結構體。
10‧‧‧陶瓷結構體
12‧‧‧陶瓷基體
14‧‧‧加熱器電極
21‧‧‧第1基體
22‧‧‧第2基體
24‧‧‧加熱器電極前驅物
第1圖係陶瓷結構體10的立體圖。
第2圖係第1圖的A-A剖面圖。
第3圖係陶瓷結構體10的製造步驟圖。
第4圖係實驗例3的剖面SEM照相。
第5圖係實驗例6的剖面SEM照相。
本發明的陶瓷結構體係在AlN陶瓷基體表面或內部具備有加熱器電極。
AlN陶瓷基體，係以AlN作為主成分之燒結體，熱膨脹係數係在40~1000℃為5.5~6.0ppm/℃，較佳為 5.6~5.8ppm/℃。AlN陶瓷基體係除了AlN以外，亦可含有源自燒結助劑之成分。作為AlN的燒結助劑，例如可舉出稀土金屬氧化物，作為稀土金屬氧化物，係以Y2O3和Yb2O3為佳。又，所謂「主成分」，係指佔有50體積%以上(以70體積%以上為佳，較佳為85體積%以上)之成分或總成分之中體積比率最高的成分(以下相同)。
加熱器電極，係含有金屬填料之WC電極。該加熱器電極係在主成分的WC含有金屬填料，通常金屬填料之電阻率係比AlN更低。因此，該加熱器電極之電阻率係較接近WC之值(以WC的0.5~2倍為佳，較佳為WC的0.8~1.5倍)，施加預定電壓時之發熱量係成為與由WC所構成之加熱器電極相同程度。WC的熱膨脹係數係在40~1000℃為5.2~5.4ppm/℃。金屬填料的含量係以如以下的方式設定：陶瓷基體與含有金屬填料之WC電極在40~1000℃之熱膨脹係數之差的絕對值|△CTE|係以0.35ppm/℃以下為佳，較佳為0.25ppm/℃以下。作為金屬填料，係以具有在40~1000℃為7.0ppm/℃以上的熱膨脹係數之高熔點者為佳。如此設定，係因為容易將|△CTE|調整成為0.35ppm/℃以下。作為金屬填料，係沒有特別限定，可舉出選自由Ru、Ta、Nb、Rh及Pt所組成群組之金屬、其合金等、以及從該等金屬和合金之中，混合不同種類2種以上而成之混合物等。其中，作為金屬，係以Ru為佳，作為合金，係以Ru合金為佳。Ru和Ru合金係因為更容易將|△CTE|調整成為0.35ppm/℃以下，而且電阻率亦較低而容易更接近WC本身的電阻率之緣故。作為Ru合金，可舉出 RuAl、RuTi、RuZr等，以RuAl為佳。將Ru作為金屬填料而成之WC粉末，係在煅燒時WC與Ru不容易產生層狀分離，相對於加熱器電極內的熱膨脹係數和電阻率有稍微不均勻之情形，含有RuAl之WC粉末，因為在煅燒時不會如此地產生分離且作為填料之RuAl能夠分散而存在WC電極內之緣故，所以加熱器電極內的熱膨脹係數和電阻率的均勻性變高。加熱器電極在室溫的電阻率，係以3.0×10-5Ωcm以下為佳，以2.5×10-5Ωcm以下為較佳。上述金屬填料的具體例，亦適合用以將加熱器電極在室溫的電阻率設定在上述的數值範圍。
將本發明的陶瓷結構體之一實施形態顯示在第1圖及第2圖。第1圖係陶瓷結構體10的立體圖，第2圖係A-A剖面圖。陶瓷結構體10係在圓盤狀AlN陶瓷基體12的內部包藏加熱器電極14而成者。加熱器電極14亦可形成為薄片狀，亦可以使其擴大至面全體之方式以一筆畫成圖案的要領來形成圖案。而且，亦可為形成複數個形成有薄片狀和圖案狀之電極。將此種陶瓷結構體10之製造方法的一個例子顯示在第3圖。在該製造方法，係首先準備AlN陶瓷燒結體作為第1基體21(參照第3圖(a))。接著，在第1基體21的上面，以成為預定電極圖案之方式，將電極糊印刷而形成加熱器電極前驅物24(參照第3圖(b))。電極糊，係在WC粉末與金屬填料的混合粉末添加有機溶劑及黏著劑且進行混合、混煉而成者。接著，以將加熱器電極前驅物24覆蓋之方式，層積第2基體22之AlN陶瓷成形體22而成積層體20(參照第3圖(c))。然後，藉由將該積層體20熱壓煅燒而將AlN陶瓷成形體22和加熱器電 極前驅物24燒結，使得第1基體21與第2基體22與加熱器電極14成為一體而完成陶瓷結構體10(參照第3圖(d))。熱壓煅燒的煅燒溫度(最高溫度)係以設定在1700~2000℃為佳，以設定在1750~1900℃為較佳。加壓壓力係以設定在50~300kgf/cm2為佳。煅燒時的環境，不對原料的煅燒造成影響之環境為佳，例如以氮氣環境、氬氣環境等的惰性環境和真空環境為佳。成形時的壓力係沒有特別限制，適當地設定在能夠保持形狀之壓力即可。
在該製造方法，亦可將第1基體21設作AlN陶瓷預煅燒體和成形體來代替AlN陶瓷燒結體。又，亦可將第2基體22設作AlN陶瓷預煅燒體和AlN陶瓷燒結體來代替AlN陶瓷成形體。將第1及第2基體21、22設作AlN預煅燒體時，相較於混合粉末的成形體時，係能夠更容易把持提高保形性。因此，藉由將電極前驅物印刷塗佈在預煅燒體表面而容易配置電極本身，而且採用一次的熱壓煅燒、或較少的煅燒次數而能夠製造陶瓷結構體和陶瓷積層體。又，亦可使用藉由沖切等的切斷加工而成為預定形狀之加熱器電極14本身來代替加熱器電極前驅物24。而且能夠藉由使用陶瓷結構體10和積層體20代替第1基體21，來製造在多層含有電極之陶瓷結構體。又，陶瓷結構體10係例示在陶瓷基體12內部包藏加熱器電極14而成者，但是亦可將加熱器電極14配置在陶瓷基體12表面。又，陶瓷結構體10係除了加熱器電極14以外亦可內部包藏靜電夾頭電極、高頻電極等。
本發明的半導體製造裝置用構件係具備上述的陶 瓷結構體。作為半導體製造裝置用構件，係沒有特別限定，例如可舉出陶瓷加熱器、靜電夾頭加熱器等。
[實施例]
(1)陶瓷結構體的製造方法
(1-1)第1基體的準備
(1-1-1)原料粉末的調製
AlN原料，係使用市售的高純度微粗粉末(氧含量0.9%、除氧以外的不純物成分含量0.1%以下、平均粒徑1.1μm)。Y2O3原料係使用市售的高純度微粗粉末(純度99.9%以上、平均粒徑1μm)。將AlN原料與Y2O3原料以質量比成為95：5~100：0的範圍之方式稱量，將Φ20mm的鐵芯耐綸玉石同時插入至耐綸製的容器之中，使用乙醇作為溶劑且進行4小時濕式混合。混合後，取出漿料且在氮氣流110℃乾燥。隨後，使其通過30網眼的篩而成為調配粉末。
(1-1-2)圓盤狀成形體的製造
將在前述(1-1-1)調配而成之粉末，在200kgf/cm2的壓力下進行單軸加壓成形，來製造直徑50mm、厚度10mm左右的圓盤狀成形體。將該成形體使用作為實驗例1~22的第2基體。
(1-1-3)圓盤狀成形體的煅燒
將前述(1-1-2)所製成的圓盤狀成形體置放在熱壓用石墨模具後，安裝在熱壓爐且將加壓壓力設為200kgf/cm2，在煅燒溫度(最高溫度)1750~1900℃保持4小時保持而製造燒結體。升溫速度及降溫速度係任一者均設為300℃/hr，升溫中至1000℃為止係抽真空且隨後將氮氣導入。導入後的氣體壓力係以成為 1.5atm左右之方式維持。降溫時係在1400℃停止溫度控制且進行爐冷卻。將所得到的燒結體，以成為直徑50mm、厚度5mm左右之方式加工且使用作為實驗1~22的第1基體。
(1-1-4)圓盤狀預煅燒體的製造
使用與前述(1-1-2)同樣的手法製造圓盤狀成形體，在惰性環境下，在800-1000℃左右進行加熱處理1小時左右，來製造圓盤狀預煅燒體。預煅燒體的外徑係使其成為Φ50mm、厚度10mm左右。將該預煅燒體使用作為實驗23~25的第1基體及第2基體。又，預煅燒體，係適當地採用在原料粉末添加有機黏著劑等的成形助劑且將保形後的成形體進行加熱處理而製造等原有的方法即可，其製造條件係不被上述限定。
(1-2)電極糊的製造
作為在加熱器電極的主成分所使用的WC粉末，係使用純度99.9%且平均粒徑0.8μm左右的市售品。又，針對添加在加熱器電極之成分，係使用以下的物質。作為Ru，係使用將Ru的市售品進行濕式粉碎至平均粒徑2μm為止之粉末。作為Al，係使用純度99.7%以上且平均粒徑10μm左右的市售品。作為RuAl合金，係使用將Ru與Al的上述粉末以莫耳比成為1：1的方式稱量且混合之後，在1100℃、Ar環境製造RuAl合金且進行濕式粉碎至平均粒徑2μm為止之粉末。電極糊係各實驗例將預定預定調配的WC粉末及添加成分充分地混合後，將該混合粉末與有機溶劑及黏著劑混合且混煉而製造。作為有機溶劑，係使用丁基卡必醇，作為黏著劑，係使用聚甲基丙烯酸正丁酯。使所製成的電極糊通過網篩而在第1基體上面，印刷形 成複數個寬度5mm×長度15mm的尺寸。此時，電極糊的厚度係成為60~70μm左右。印刷後，係使電極糊在大氣中乾燥1小時左右。
(1-3)第2基體的配置
在前述(1-2)所製成之第1基體的電極糊印刷面上，藉由將第2基體重疊而成為積層體。第1基體係在前述(1-1-3)所製成的煅燒體時，係使用在前述(1-1-2)所製成的成形體作為第2基體。第1基體係在前述(1-1-4)所製成的預煅燒體時，係使用與第1基體同樣的預煅燒體作為第2基體。
(1-4)陶瓷基體與電極的共煅燒
將前述(1-3)所製成的積層體插入熱壓爐，在與前述(1-1-3)同樣的條件下進行熱壓煅燒且一體化，來得到陶瓷結構體。又，各實驗例的煅燒溫度(最高溫度)係顯示在表1。
(2)陶瓷結構體的評價項目
(2-1)熱膨脹係數
(2-1-1)單體的熱膨脹係數
WC、Ru、RuAl合金的熱膨脹係數，係藉由將在加熱器電極所使用之市售的粉末，在與前述(1-1-3)大致相同條件下，進行熱壓煅燒而製造主體材，使用該主體材且依據JIS-R1618之方法而在40~1000℃的範圍測定。AlN的熱膨脹係數，係使用從AlN陶瓷基體所切取的燒結體試料，使用依據JIS-R1618之方法而在40~1000℃的範圍測定。
(2-1-2)加熱器電極的熱膨脹係數
加熱器電極在40~1000℃的熱膨脹係數，係基於前述(2-1-1) 所測定之單體在40~1000℃的熱膨脹係數及加熱器電極的調配比率且藉由計算而求取。
(2-2)加熱器電極的電阻率
從所製造的陶瓷結構體，以在寬度9mm×長度9mm×厚度9mm左右的長方體狀之中央內部包藏電極寬度5mm×長度9mm左右的方式切取試片。又，使電極的端面在試片的兩端面露出寬度5mm且使用光學顯微鏡計量電極的寬度及厚度，來求取電極端面的剖面積S(cm2)。又，使用游尺測定電極的長度L(cm)而使用於算出電阻率。電阻測定用的電路，係將導電性膏塗佈在電極的兩端面後，連接導線(lead line)而構成，於大氣中、室溫下使微小電流I(mA)在0~150mA的範圍流動且測定此時產生的微小電壓值V(mV)，而且藉由R=V/I來求取電極的電阻R(Ω)。隨後，藉由ρ=R×S/L來算出電極的電阻率ρ(Ωcm)。在各實驗例的電極之電阻率，係採用所測得的4~6個之平均值。
(2-3)陶瓷結構體的微構造
將所製造的陶瓷結構體之電極所露出的截面進行鏡面研磨後，使用掃描型電子顯微鏡(SEM)及電子探針微量分析器(EPMA；Electron Probe Micro-Analyzer)，來進行觀察電極、陶瓷基體的界面、其周邊等的微構造及映像分析。
(2-4)電極中的成分
從製成的陶瓷結構體，將一方的陶瓷基體除去而使電極面露出且將電極面研磨後，藉由X射線繞射裝置(XRD)鑑定電極的結晶相。測定條件為CuKα、40kV、40mA、2θ=5-70°，測定的位移寬度係設為0.02°。
(3)陶瓷結構體的評價結果
以下，說明各實驗例的評價結果。又，在所使用之第1基體與第2基體的組合，實驗例1~22係使用燒結體與成形體，實驗例23~25係使用預煅燒體與預煅燒體。將各實驗例所使用的AlN陶瓷基體、加熱器電極之組成、特性等彙總在表1。
‧實驗例1~3
在實驗例1~3，係在加熱器電極的材料，使用以WC作為主成分而添加有Ru之WC/Ru複合材。Ru的熱膨脹係數係被測定為7.64ppm/℃，比AlN和WC更大。又，依照文獻，Ru的電阻率係被認為在室溫為低電阻率且為8×10-6Ωcm。作為電極組成，係如以下調配：在實驗例1為WC/2.5volRu(表示相對於全體的體積，Ru的體積比率為2.5%)，在實驗例2為WC/7.5vol%Ru，在實驗例3為WC/16vol%Ru，以下，依照順序以成為第1基體、電極糊、第2基體之方式層積後，藉由於氮氣環境下，在加壓壓力200kgf/cm2、最高溫度1825℃保持4小時而進行煅燒，來製造各實驗例的試樣。針對實驗例1，加熱器電極的熱膨脹係數為5.35ppm/℃，AlN的熱膨脹係數與加熱器電極的熱膨脹係數之差的絕對值|△CTE|係成為較小的值且為0.35ppm/℃。電阻率為2.2×10-5Ωcm，為低電阻率且與WC單獨的電阻率(2.1×10-5Ωcm，參照比較例4)為相同程度。在實驗例2、3，雖然使Ru含量増加，但是|△CTE|係且各自為0.23ppm/℃、0.04ppm/℃且變成更接近AlN的熱膨脹係數，電阻率係各自維持低電阻率且為2.5×10-5Ωcm、3.0×10-5Ωcm。因此，針對Ru，係在添加量為2.5~16vol%的範圍時，能夠減少|△CTE|，同時實現低電阻率。又，針對實驗例1~3，係使用SEM進行剖面觀察。其結果，在界面和其附近係無法確認龜裂等，且在AlN陶瓷基體內的埋設狀態為良好，但是在加熱器電極的上部及下部能夠確認組成差(參照第4圖)。亦即，第4圖中，在左右帶狀地延伸之較明亮的部分為加熱器電極，而在其上下 較黑的部分為AlN陶瓷燒結體。認為第4圖的加熱器電極部之發白部分為WC，淺灰色部為Ru，但是如該圖，能夠觀察到WC為大量存在之下部的層、及在其上部能夠看到許多淺灰色之Ru的層。藉由能夠推測在只將Ru作為填料之實驗例，加熱器電極內的熱膨脹係數係稍微不均勻。
‧實驗例4~8
在實驗例4~8，係在加熱器電極的材料，使用在WC添加RuAl而成之WC/RuAl複合材。RuAl的熱膨脹係數係比Ru更大且經測定為10.3ppm/℃。因此，能夠以比Ru時更少的添加量，來提高WC電極的熱膨脹係數且容易與AlN陶瓷基體一致。|△CTE|係在該等全部的實驗例為滿足0.35ppm/℃以內。電阻率係在全部的實驗例為3.0×10-5Ωcm以下。因此，RuAl時，添加量為1.2~15vol%的範圍時，在減小|△CTE|之同時，能夠維持低電阻率。藉由SEM之剖面觀察，在界面和其附近無法確認龜裂等而良好，而且如在只添加Ru時能夠觀察到之在加熱器電極內的組成為層狀地不同之現象亦無法確認。作為代表，將實驗例6的剖面SEM照相顯示在第5圖。第5圖中，在左右帶狀地延伸之較明亮的部分為加熱器電極，而其上下較黑的部分為AlN陶瓷燒結體。在本照相，在較明亮部分的加熱器電極內，能夠觀察到從次微米至2微米左右大小之灰色且分散之相，該等係藉由EPMA的元素映像分析，能夠確認Ru及Al的分布為一致。而且，使實驗例6的煅燒後試料之電極面露出且對該面進行XRD測定時，得知在電極材係含有WC及RuAl且Ru係無法鑑定RuAl以外的結晶相。從該等結果，在WC 電極材內，RuAl結晶為分散而存在且可說是能夠作為調整電極材的熱膨脹係數之作用。從以上的結果，係以將1.2~15vol%左右的RuAl添加在WC作為填料之方法為最佳。
實驗例9~22
在實驗例9~12，係將WC/RuAl複合材的RuAl添加量設為4.0、8.2、12、15vol%，在1850℃進行煅燒。在實驗例13~16，係將WC/RuAl%複合材的RuAl添加量設為4.0、8.2、12、15vol%，在1800℃進行煅燒。在實驗例17~20，係將WC/RuAl複合材的RuAl添加量設為4.0、8.2、12、15vol%，在1750℃進行煅燒。在實驗例21、22，係將AlN氣體中的Y2O3之含量各自設為0wt%、0.5wt%，將WC/RuAl複合材的RuAl添加量設為4.2vol%，在1900℃進行煅燒。其結果，RuAl添加量為4.0vol%時，電阻率為2.0×10-5~2.2×10-5Ωcm，RuAl添加量為8.2vol%時，電阻率為2.3×10-5~2.4×10-5Ωcm，RuAl添加量為12vol%時，電阻率為2.4×10-5~2.5×10-5Ωcm，RuAl添加量為15vol%時，電阻率為2.8×10-5~3.0×10-5Ωcm。如此，即便變更煅燒溫度時，電阻率係能夠維持3.0×10-5Ωcm以下之較低的。
‧實驗例23~25
實驗例23~25%係同時將第1及第2基體設作AlN預煅燒體，將WC/RuAl複合材的RuAl添加量設作4.0、8.2、12vol%，將煅燒溫度設作1825℃，其它係依據前述(1-1-3)之方法而進行煅燒。其結果，電阻率為2.0~2.3×10-5、3.0×10-5Ωcm以下之較低的值。又，該等結構體係在藉由SEM和EPMA之剖面觀察、以及藉由XRD之結晶相解析，亦確認與實驗例6作為代表之 結構體為同樣的狀態。亦即，WC/RuAl複合電極材係即便在煅燒前的AlN基體使用預煅燒體時，亦能夠得到特性良好的AlN陶瓷結構體。
‧比較例1~4
作為加熱器電極的材料，係各自添加下列材料而使用，在比較例1為Mo，在比較例2為Mo2C，在比較例3為W，在比較例4為WC。其將結果顯示在表2。如比較例1、2，將加熱器電極的主成分設作Mo、Mo2C時，|△CTE|係各自為0.41、1.14ppm/℃，為大於0.35ppm/℃。如比較例3，將加熱器電極的材料設作W時，|△CTE|為0.41ppm/℃，為大於0.35ppm/℃。又，將比較例3的陶瓷結構體製造3次時，3個體的電阻率為2.0~3.6×10-5Ωcm，偏差為較大。得知該比較例3的材料係能夠從剖面觀察認定電極材的一部分被碳化之情形且其程度係依照個體而不同。因此認為該等電極材的不均質性係與電阻率的偏差有關係。如比較例4，將加熱器電極的材料設作WC時，電阻率較低且為2.1×10-5Ωcm，|△CTE|為0.39ppm/℃，為大於0.35ppm/℃。該等比較例1~4係並不具有與AlN陶瓷基體之熱膨脹係數為接近且具有低電阻率之加熱器電極。
本發明並不限於上述的實施例，只要是屬於本發明的技術範圍以各種樣態實施者亦屬本發明的範疇。
本申請係將2016年2月29日提出申請之日本國特許申請第2016-037658號作為優先主張的基礎，藉由引用而將其內容的全部包含在本說明書。
10‧‧‧陶瓷結構體
12‧‧‧陶瓷基體
14‧‧‧加熱器電極

Claims (7)

  1. 一種陶瓷結構體，係在AlN陶瓷基體表面或內部具備有加熱器電極之陶瓷結構體，前述加熱器電極係使主成分的WC含有電阻率比AlN更低且熱膨脹係數更高的金屬填料而成者，前述AlN陶瓷基體與前述加熱器電極在40~1000℃之熱膨脹係數差的絕對值為0.35ppm/℃以下。
  2. 如申請專利範圍第1項所述之陶瓷結構體，其中前述金屬為Ru或Ru合金。
  3. 如申請專利範圍第1或2項所述之陶瓷結構體，其中前述金屬為RuAl。
  4. 如申請專利範圍第1至3項中任一項所述之陶瓷結構體，其中前述加熱器電極在室溫的電阻率為3.0×10-5Ωcm以下。
  5. 一種半導體製造裝置用構件，係具有如申請專利範圍第1至4項中任一項所述之陶瓷結構體。
  6. 一種陶瓷結構體之製造方法，係在氮化鋁的燒結體、預煅燒體或成形體之第1基體的一面，配置使在WC含有金屬填料而成之加熱器電極或加熱器電極前驅物，而且藉由在其上，層積氮化鋁的燒結體、預煅燒體或成形體之第2基體而成為積層體且將該積層體進行熱壓煅燒而得到陶瓷結構體。
  7. 如申請專利範圍第6項所述之陶瓷結構體之製造方法，其中前述金屬為Ru或Ru合金，前述金屬的含量，係以前述AlN陶瓷基體與前述加熱器電 極或前述加熱器電極前驅物在40~1000℃之熱膨脹係數之差的絕對值成為0.35ppm/℃以下的方式設定。
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