JP2015513795A5 - - Google Patents

Download PDF

Info

Publication number
JP2015513795A5
JP2015513795A5 JP2014558244A JP2014558244A JP2015513795A5 JP 2015513795 A5 JP2015513795 A5 JP 2015513795A5 JP 2014558244 A JP2014558244 A JP 2014558244A JP 2014558244 A JP2014558244 A JP 2014558244A JP 2015513795 A5 JP2015513795 A5 JP 2015513795A5
Authority
JP
Japan
Prior art keywords
level
lumo
homo
difference
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014558244A
Other languages
English (en)
Japanese (ja)
Other versions
JP6025874B2 (ja
JP2015513795A (ja
Filing date
Publication date
Priority claimed from IT000284A external-priority patent/ITMI20120284A1/it
Application filed filed Critical
Publication of JP2015513795A publication Critical patent/JP2015513795A/ja
Publication of JP2015513795A5 publication Critical patent/JP2015513795A5/ja
Application granted granted Critical
Publication of JP6025874B2 publication Critical patent/JP6025874B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014558244A 2012-02-27 2013-02-21 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ Expired - Fee Related JP6025874B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2012A000284 2012-02-27
IT000284A ITMI20120284A1 (it) 2012-02-27 2012-02-27 Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita
PCT/IB2013/051400 WO2013128344A1 (en) 2012-02-27 2013-02-21 Organic light emitting ambipolar field effect transistor with distributed light emission

Publications (3)

Publication Number Publication Date
JP2015513795A JP2015513795A (ja) 2015-05-14
JP2015513795A5 true JP2015513795A5 (enExample) 2016-03-24
JP6025874B2 JP6025874B2 (ja) 2016-11-16

Family

ID=45999947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014558244A Expired - Fee Related JP6025874B2 (ja) 2012-02-27 2013-02-21 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ

Country Status (8)

Country Link
US (1) US9006726B2 (enExample)
EP (1) EP2786437B1 (enExample)
JP (1) JP6025874B2 (enExample)
KR (1) KR101839649B1 (enExample)
CN (1) CN104094436B (enExample)
IT (1) ITMI20120284A1 (enExample)
TW (1) TWI573305B (enExample)
WO (1) WO2013128344A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6742983B2 (ja) * 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) * 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
CN106684153A (zh) * 2015-11-05 2017-05-17 中国科学院宁波材料技术与工程研究所 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
KR102810696B1 (ko) * 2018-12-27 2025-05-21 바이오-온 에스.피.에이. 폴리히드록시알카노에이트의 섬유를 포함하는 막을 포함하는 압전 장치
CN111081740A (zh) * 2019-12-06 2020-04-28 深圳市华星光电半导体显示技术有限公司 一种显示面板
CN115207238B (zh) * 2022-07-01 2024-12-03 闽都创新实验室 一种具有光电双输出的发光突触晶体管及其制备方法
TWI864513B (zh) * 2022-11-30 2024-12-01 國立成功大學 發光裝置及發光裝置之製備方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1398146A (zh) * 2002-08-13 2003-02-19 清华大学 一种有机电致发光器件
US6970490B2 (en) 2002-05-10 2005-11-29 The Trustees Of Princeton University Organic light emitting devices based on the formation of an electron-hole plasma
WO2004086526A2 (en) 2003-03-28 2004-10-07 Technische Universität Darmstadt Organic electroluminescence devices
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
JP5064034B2 (ja) * 2004-05-11 2012-10-31 エルジー・ケム・リミテッド 有機電気素子
CN101056873A (zh) 2004-09-14 2007-10-17 西北大学 羰基官能化的噻吩化合物和相关的器件结构
US8022401B2 (en) * 2006-11-14 2011-09-20 Idemitsu Kosan, Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
US8946688B2 (en) * 2009-12-14 2015-02-03 Idemitsu Kosan Co., Ltd. Polycyclic ring-fused compound and organic thin film transistor utilizing the same
CN102893422B (zh) 2010-03-20 2016-03-23 天光材料科技股份有限公司 吡咯并[3,2-b]吡咯半导体化合物及采用该化合物的器件

Similar Documents

Publication Publication Date Title
Lee et al. Gate-tunable hole and electron carrier transport in atomically thin dual-channel WSe2/MoS2 heterostructure for ambipolar field-effect transistors
JP2011249823A5 (enExample)
JP2010258442A5 (ja) 溝の形成方法、および電界効果トランジスタの製造方法
CN104094436B (zh) 具有分布式光发射的有机发光二极场效应晶体管
CN103782408B (zh) 电致发光有机双栅晶体管
CN103718327B (zh) 电致发光有机晶体管
KR101595341B1 (ko) 전기발광 유기 트랜지스터
JP2013058770A5 (enExample)
JP2014526122A5 (enExample)
JP2015529006A5 (enExample)
JP2014522113A5 (enExample)
JP2013247143A5 (enExample)
JP2022139077A5 (enExample)
CN102569409B (zh) 双层隔离纵向堆叠式半导体纳米线mosfet
JP2014033185A5 (enExample)
FI20175123A7 (fi) Puolijohderakenteita ja niiden valmistus
JP2015170792A5 (enExample)
CN110911573B (zh) 一种提高发光效率的交流驱动有机发光场效应晶体管及其制备方法
CN103972390A (zh) 一种双极型有机发光场效应晶体管
KR20150140504A (ko) 유기 발광 트랜지스터
CN205122589U (zh) 一种环形栅半导体功率器件
CN105609650A (zh) 一种基于电荷产生层的在交流电压下驱动的有机发光器件
CN204668360U (zh) 一种纵向叠层结构的双极型有机场效应管
KR101146193B1 (ko) 유기반도체소자 및 그 제조방법
CN103077967A (zh) 一种高效率平面式绝缘栅双极型晶体管igbt