TWI573305B - 具有分佈式發光性能之有機發光雙極性場效電晶體 - Google Patents
具有分佈式發光性能之有機發光雙極性場效電晶體 Download PDFInfo
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- TWI573305B TWI573305B TW102106218A TW102106218A TWI573305B TW I573305 B TWI573305 B TW I573305B TW 102106218 A TW102106218 A TW 102106218A TW 102106218 A TW102106218 A TW 102106218A TW I573305 B TWI573305 B TW I573305B
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- Prior art keywords
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- 230000005669 field effect Effects 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 74
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 17
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 16
- 239000002800 charge carrier Substances 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000004776 molecular orbital Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 168
- 238000005286 illumination Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 239000010931 gold Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- -1 8-hydroxyquinolinyl Chemical group 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 9
- 239000004926 polymethyl methacrylate Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229930192474 thiophene Natural products 0.000 description 5
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 4
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 4
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 241000208340 Araliaceae Species 0.000 description 3
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 3
- 235000003140 Panax quinquefolius Nutrition 0.000 description 3
- 235000008434 ginseng Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000003577 thiophenes Chemical class 0.000 description 3
- OSOUNOBYRMOXQQ-UHFFFAOYSA-N 1-chloro-3-methylbenzene Chemical compound CC1=CC=CC(Cl)=C1 OSOUNOBYRMOXQQ-UHFFFAOYSA-N 0.000 description 2
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011799 hole material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- SMFLPHCNEUPBKV-UHFFFAOYSA-N n,n-dimethyl-4-[2-(4h-pyran-2-yl)ethenyl]aniline Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CCC=CO1 SMFLPHCNEUPBKV-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000003359 percent control normalization Methods 0.000 description 1
- 229920000867 polyelectrolyte Polymers 0.000 description 1
- 238000000728 pulse radiolysis time-resolved microwave conductivity Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000003608 radiolysis reaction Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000284A ITMI20120284A1 (it) | 2012-02-27 | 2012-02-27 | Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201349606A TW201349606A (zh) | 2013-12-01 |
| TWI573305B true TWI573305B (zh) | 2017-03-01 |
Family
ID=45999947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102106218A TWI573305B (zh) | 2012-02-27 | 2013-02-22 | 具有分佈式發光性能之有機發光雙極性場效電晶體 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9006726B2 (enExample) |
| EP (1) | EP2786437B1 (enExample) |
| JP (1) | JP6025874B2 (enExample) |
| KR (1) | KR101839649B1 (enExample) |
| CN (1) | CN104094436B (enExample) |
| IT (1) | ITMI20120284A1 (enExample) |
| TW (1) | TWI573305B (enExample) |
| WO (1) | WO2013128344A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2911214B1 (en) | 2014-02-20 | 2018-08-08 | Amorosi, Antonio | Multilayer structure of an OLET transistor |
| EP2960280A1 (en) | 2014-06-26 | 2015-12-30 | E.T.C. S.r.l. | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| EP2978038A1 (en) | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| WO2016014980A1 (en) | 2014-07-24 | 2016-01-28 | E.T.C.S.R.L. | Organic electroluminescent transistor |
| EP3021373A1 (en) * | 2014-11-14 | 2016-05-18 | E.T.C. S.r.l. | Display containing improved pixel architectures |
| WO2016100983A1 (en) | 2014-12-19 | 2016-06-23 | Polyera Corporation | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| JP6546400B2 (ja) * | 2015-02-05 | 2019-07-17 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN105355799A (zh) * | 2015-10-12 | 2016-02-24 | Tcl集团股份有限公司 | 一种量子点发光场效应晶体管及其制备方法 |
| CN106684153A (zh) * | 2015-11-05 | 2017-05-17 | 中国科学院宁波材料技术与工程研究所 | 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置 |
| WO2019139175A1 (en) * | 2018-01-09 | 2019-07-18 | Kyushu University, National University Corporation | Organic light-emitting field-effect transistor |
| US12262640B2 (en) * | 2018-12-27 | 2025-03-25 | Bio On S.P.A. | Piezoelectric device comprising a membrane comprising fibres of a polyhydroxyalkanoate |
| CN111081740A (zh) * | 2019-12-06 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板 |
| CN115207238B (zh) * | 2022-07-01 | 2024-12-03 | 闽都创新实验室 | 一种具有光电双输出的发光突触晶体管及其制备方法 |
| TWI864513B (zh) * | 2022-11-30 | 2024-12-01 | 國立成功大學 | 發光裝置及發光裝置之製備方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1398146A (zh) * | 2002-08-13 | 2003-02-19 | 清华大学 | 一种有机电致发光器件 |
| US6970490B2 (en) * | 2002-05-10 | 2005-11-29 | The Trustees Of Princeton University | Organic light emitting devices based on the formation of an electron-hole plasma |
| DE602004031596D1 (de) | 2003-03-28 | 2011-04-14 | Michele Muccini | Organische elektrolumineszente vorrichtung |
| US20060261329A1 (en) * | 2004-03-24 | 2006-11-23 | Michele Muccini | Organic electroluminescence devices |
| JP5064034B2 (ja) * | 2004-05-11 | 2012-10-31 | エルジー・ケム・リミテッド | 有機電気素子 |
| KR20070106976A (ko) * | 2004-09-14 | 2007-11-06 | 노오쓰웨스턴 유니버시티 | 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물 |
| WO2008059816A1 (en) * | 2006-11-14 | 2008-05-22 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light-emitting transistor |
| JP2012507843A (ja) | 2008-10-29 | 2012-03-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法 |
| JP5666474B2 (ja) * | 2009-12-14 | 2015-02-12 | 出光興産株式会社 | 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ |
| JP5588559B2 (ja) | 2010-03-20 | 2014-09-10 | ポリエラ コーポレイション | ピロロ［３，２−ｂ］ピロール半導体化合物およびそれを組み込んだデバイス |
-
2012
- 2012-02-27 IT IT000284A patent/ITMI20120284A1/it unknown
-
2013
- 2013-02-21 EP EP13716411.7A patent/EP2786437B1/en active Active
- 2013-02-21 CN CN201380006607.4A patent/CN104094436B/zh active Active
- 2013-02-21 JP JP2014558244A patent/JP6025874B2/ja not_active Expired - Fee Related
- 2013-02-21 US US14/373,225 patent/US9006726B2/en active Active
- 2013-02-21 KR KR1020147020705A patent/KR101839649B1/ko active Active
- 2013-02-21 WO PCT/IB2013/051400 patent/WO2013128344A1/en not_active Ceased
- 2013-02-22 TW TW102106218A patent/TWI573305B/zh active
Non-Patent Citations (2)
| Title |
|---|
| R. Capelli et al., "Integration of silk protein in organic and light-emitting transistors", Organic Electronics 12, pp. 1146-1151, 2011 * |
| R. Capelli et al., "Organic light-emitting transistors with an effeciency that outperform the equivalent light-emitting diodes", Nature Materials 9, pp. 496-503, 2010 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6025874B2 (ja) | 2016-11-16 |
| JP2015513795A (ja) | 2015-05-14 |
| KR20140126699A (ko) | 2014-10-31 |
| CN104094436A (zh) | 2014-10-08 |
| US20150001518A1 (en) | 2015-01-01 |
| US9006726B2 (en) | 2015-04-14 |
| TW201349606A (zh) | 2013-12-01 |
| EP2786437B1 (en) | 2015-03-25 |
| ITMI20120284A1 (it) | 2013-08-28 |
| CN104094436B (zh) | 2016-08-24 |
| EP2786437A1 (en) | 2014-10-08 |
| KR101839649B1 (ko) | 2018-03-16 |
| WO2013128344A1 (en) | 2013-09-06 |
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| Palacios-Márquez et al. | Study of the resistive switching behavior in Si/N: SiO x (x< 2) multilayer-based MOS devices | |
| Ibrahim et al. | White Light Generation from Electroluminescence Devices Using TPD: PMMA/QDs/Alq3 | |
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| Mohammed et al. | Preparation of hybrid light-emitting diodes (OI-LED) based on Carbon Nanoparticles | |
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