JP6025874B2 - 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ - Google Patents
分散した発光を有する有機発光電界効果アンバイポーラトランジスタ Download PDFInfo
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- JP6025874B2 JP6025874B2 JP2014558244A JP2014558244A JP6025874B2 JP 6025874 B2 JP6025874 B2 JP 6025874B2 JP 2014558244 A JP2014558244 A JP 2014558244A JP 2014558244 A JP2014558244 A JP 2014558244A JP 6025874 B2 JP6025874 B2 JP 6025874B2
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI2012A000284 | 2012-02-27 | ||
| IT000284A ITMI20120284A1 (it) | 2012-02-27 | 2012-02-27 | Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita |
| PCT/IB2013/051400 WO2013128344A1 (en) | 2012-02-27 | 2013-02-21 | Organic light emitting ambipolar field effect transistor with distributed light emission |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015513795A JP2015513795A (ja) | 2015-05-14 |
| JP2015513795A5 JP2015513795A5 (enExample) | 2016-03-24 |
| JP6025874B2 true JP6025874B2 (ja) | 2016-11-16 |
Family
ID=45999947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014558244A Expired - Fee Related JP6025874B2 (ja) | 2012-02-27 | 2013-02-21 | 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9006726B2 (enExample) |
| EP (1) | EP2786437B1 (enExample) |
| JP (1) | JP6025874B2 (enExample) |
| KR (1) | KR101839649B1 (enExample) |
| CN (1) | CN104094436B (enExample) |
| IT (1) | ITMI20120284A1 (enExample) |
| TW (1) | TWI573305B (enExample) |
| WO (1) | WO2013128344A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2911214B1 (en) | 2014-02-20 | 2018-08-08 | Amorosi, Antonio | Multilayer structure of an OLET transistor |
| EP2960280A1 (en) | 2014-06-26 | 2015-12-30 | E.T.C. S.r.l. | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| EP2978038A1 (en) | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| WO2016014980A1 (en) | 2014-07-24 | 2016-01-28 | E.T.C.S.R.L. | Organic electroluminescent transistor |
| EP3021373A1 (en) * | 2014-11-14 | 2016-05-18 | E.T.C. S.r.l. | Display containing improved pixel architectures |
| WO2016100983A1 (en) | 2014-12-19 | 2016-06-23 | Polyera Corporation | Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices |
| JP6546400B2 (ja) * | 2015-02-05 | 2019-07-17 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN105355799A (zh) * | 2015-10-12 | 2016-02-24 | Tcl集团股份有限公司 | 一种量子点发光场效应晶体管及其制备方法 |
| CN106684153A (zh) * | 2015-11-05 | 2017-05-17 | 中国科学院宁波材料技术与工程研究所 | 自驱动发光薄膜晶体管,薄膜晶体管阵列及显示装置 |
| WO2019139175A1 (en) * | 2018-01-09 | 2019-07-18 | Kyushu University, National University Corporation | Organic light-emitting field-effect transistor |
| US12262640B2 (en) * | 2018-12-27 | 2025-03-25 | Bio On S.P.A. | Piezoelectric device comprising a membrane comprising fibres of a polyhydroxyalkanoate |
| CN111081740A (zh) * | 2019-12-06 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板 |
| CN115207238B (zh) * | 2022-07-01 | 2024-12-03 | 闽都创新实验室 | 一种具有光电双输出的发光突触晶体管及其制备方法 |
| TWI864513B (zh) * | 2022-11-30 | 2024-12-01 | 國立成功大學 | 發光裝置及發光裝置之製備方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1398146A (zh) * | 2002-08-13 | 2003-02-19 | 清华大学 | 一种有机电致发光器件 |
| US6970490B2 (en) * | 2002-05-10 | 2005-11-29 | The Trustees Of Princeton University | Organic light emitting devices based on the formation of an electron-hole plasma |
| DE602004031596D1 (de) | 2003-03-28 | 2011-04-14 | Michele Muccini | Organische elektrolumineszente vorrichtung |
| US20060261329A1 (en) * | 2004-03-24 | 2006-11-23 | Michele Muccini | Organic electroluminescence devices |
| JP5064034B2 (ja) * | 2004-05-11 | 2012-10-31 | エルジー・ケム・リミテッド | 有機電気素子 |
| KR20070106976A (ko) * | 2004-09-14 | 2007-11-06 | 노오쓰웨스턴 유니버시티 | 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물 |
| WO2008059816A1 (en) * | 2006-11-14 | 2008-05-22 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light-emitting transistor |
| JP2012507843A (ja) | 2008-10-29 | 2012-03-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法 |
| JP5666474B2 (ja) * | 2009-12-14 | 2015-02-12 | 出光興産株式会社 | 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ |
| JP5588559B2 (ja) | 2010-03-20 | 2014-09-10 | ポリエラ コーポレイション | ピロロ[3,2−b]ピロール半導体化合物およびそれを組み込んだデバイス |
-
2012
- 2012-02-27 IT IT000284A patent/ITMI20120284A1/it unknown
-
2013
- 2013-02-21 EP EP13716411.7A patent/EP2786437B1/en active Active
- 2013-02-21 CN CN201380006607.4A patent/CN104094436B/zh active Active
- 2013-02-21 JP JP2014558244A patent/JP6025874B2/ja not_active Expired - Fee Related
- 2013-02-21 US US14/373,225 patent/US9006726B2/en active Active
- 2013-02-21 KR KR1020147020705A patent/KR101839649B1/ko active Active
- 2013-02-21 WO PCT/IB2013/051400 patent/WO2013128344A1/en not_active Ceased
- 2013-02-22 TW TW102106218A patent/TWI573305B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015513795A (ja) | 2015-05-14 |
| KR20140126699A (ko) | 2014-10-31 |
| CN104094436A (zh) | 2014-10-08 |
| US20150001518A1 (en) | 2015-01-01 |
| US9006726B2 (en) | 2015-04-14 |
| TW201349606A (zh) | 2013-12-01 |
| EP2786437B1 (en) | 2015-03-25 |
| ITMI20120284A1 (it) | 2013-08-28 |
| TWI573305B (zh) | 2017-03-01 |
| CN104094436B (zh) | 2016-08-24 |
| EP2786437A1 (en) | 2014-10-08 |
| KR101839649B1 (ko) | 2018-03-16 |
| WO2013128344A1 (en) | 2013-09-06 |
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