JP6025874B2 - 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ - Google Patents

分散した発光を有する有機発光電界効果アンバイポーラトランジスタ Download PDF

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JP6025874B2
JP6025874B2 JP2014558244A JP2014558244A JP6025874B2 JP 6025874 B2 JP6025874 B2 JP 6025874B2 JP 2014558244 A JP2014558244 A JP 2014558244A JP 2014558244 A JP2014558244 A JP 2014558244A JP 6025874 B2 JP6025874 B2 JP 6025874B2
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JP2015513795A5 (enExample
JP2015513795A (ja
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ラファエッラ・カペッリ
ステファノ・トッファニン
ジャンルカ・ジェネラーリ
ミケレ・ムッチーニ
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エ・ティ・チ・エッセ・エッレ・エッレ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2014558244A 2012-02-27 2013-02-21 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ Expired - Fee Related JP6025874B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2012A000284 2012-02-27
IT000284A ITMI20120284A1 (it) 2012-02-27 2012-02-27 Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita
PCT/IB2013/051400 WO2013128344A1 (en) 2012-02-27 2013-02-21 Organic light emitting ambipolar field effect transistor with distributed light emission

Publications (3)

Publication Number Publication Date
JP2015513795A JP2015513795A (ja) 2015-05-14
JP2015513795A5 JP2015513795A5 (enExample) 2016-03-24
JP6025874B2 true JP6025874B2 (ja) 2016-11-16

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JP2014558244A Expired - Fee Related JP6025874B2 (ja) 2012-02-27 2013-02-21 分散した発光を有する有機発光電界効果アンバイポーラトランジスタ

Country Status (8)

Country Link
US (1) US9006726B2 (enExample)
EP (1) EP2786437B1 (enExample)
JP (1) JP6025874B2 (enExample)
KR (1) KR101839649B1 (enExample)
CN (1) CN104094436B (enExample)
IT (1) ITMI20120284A1 (enExample)
TW (1) TWI573305B (enExample)
WO (1) WO2013128344A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6742983B2 (ja) * 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP3021373A1 (en) * 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
CN106684153A (zh) * 2015-11-05 2017-05-17 中国科学院宁波材料技术与工程研究所 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
KR102810696B1 (ko) * 2018-12-27 2025-05-21 바이오-온 에스.피.에이. 폴리히드록시알카노에이트의 섬유를 포함하는 막을 포함하는 압전 장치
CN111081740A (zh) * 2019-12-06 2020-04-28 深圳市华星光电半导体显示技术有限公司 一种显示面板
CN115207238B (zh) * 2022-07-01 2024-12-03 闽都创新实验室 一种具有光电双输出的发光突触晶体管及其制备方法
TWI864513B (zh) * 2022-11-30 2024-12-01 國立成功大學 發光裝置及發光裝置之製備方法

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Publication number Priority date Publication date Assignee Title
CN1398146A (zh) * 2002-08-13 2003-02-19 清华大学 一种有机电致发光器件
US6970490B2 (en) 2002-05-10 2005-11-29 The Trustees Of Princeton University Organic light emitting devices based on the formation of an electron-hole plasma
WO2004086526A2 (en) 2003-03-28 2004-10-07 Technische Universität Darmstadt Organic electroluminescence devices
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
JP5064034B2 (ja) * 2004-05-11 2012-10-31 エルジー・ケム・リミテッド 有機電気素子
CN101056873A (zh) 2004-09-14 2007-10-17 西北大学 羰基官能化的噻吩化合物和相关的器件结构
US8022401B2 (en) * 2006-11-14 2011-09-20 Idemitsu Kosan, Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
US8946688B2 (en) * 2009-12-14 2015-02-03 Idemitsu Kosan Co., Ltd. Polycyclic ring-fused compound and organic thin film transistor utilizing the same
CN102893422B (zh) 2010-03-20 2016-03-23 天光材料科技股份有限公司 吡咯并[3,2-b]吡咯半导体化合物及采用该化合物的器件

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Publication number Publication date
TW201349606A (zh) 2013-12-01
EP2786437A1 (en) 2014-10-08
ITMI20120284A1 (it) 2013-08-28
US20150001518A1 (en) 2015-01-01
CN104094436A (zh) 2014-10-08
US9006726B2 (en) 2015-04-14
WO2013128344A1 (en) 2013-09-06
KR20140126699A (ko) 2014-10-31
CN104094436B (zh) 2016-08-24
JP2015513795A (ja) 2015-05-14
TWI573305B (zh) 2017-03-01
KR101839649B1 (ko) 2018-03-16
EP2786437B1 (en) 2015-03-25

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