CN106684153A - 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置 - Google Patents

自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置 Download PDF

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CN106684153A
CN106684153A CN201510751333.2A CN201510751333A CN106684153A CN 106684153 A CN106684153 A CN 106684153A CN 201510751333 A CN201510751333 A CN 201510751333A CN 106684153 A CN106684153 A CN 106684153A
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戴明志
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Ningbo Institute of Material Technology and Engineering of CAS
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract

本发明公开一种自驱动发光薄膜晶体管，包括：半导体层包括第一表面以及第二表面；源极以及漏极，间隔设置于所述第一表面，且源极和漏极之间接一第一电压；绝缘层，设置于所述第二表面；栅极，设置于所述绝缘层远离所述半导体层的表面，所述栅极接一第二电压；其中，所述半导体层为氧化物半导体层，且当空穴和电子分别从所述漏极和源极注入所述氧化物半导体层，并在所述氧化物半导体层中复合时会产生光线射出。本发明还提供一种使用上述自驱动发光薄膜晶体管的自驱动发光薄膜晶体管阵列及显示装置。

Description

自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置
技术领域
本发明涉及一种自驱动的自驱动发光薄膜晶体管，及使用该自驱动发光薄膜晶体管阵列及显示装置。
背景技术
常用的薄膜晶体管一般仅作为一个驱动电路，用于控制液晶扭转的电压输出，以驱动液晶显示器的工作，其本身并不能发光。目前，国内外均没有发现对自驱动和发光一体化的薄膜晶体管的研究。
发明内容
本发明提供一种自驱动发光薄膜晶体管，使用该自驱动发光薄膜晶体管的自驱动发光薄膜晶体管阵列及显示装置，可以获得驱动和发光一体化的薄膜晶体管。
一种自驱动发光薄膜晶体管，包括：半导体层包括第一表面以及第二表面；源极以及漏极，间隔设置于所述第一表面，且源极和漏极之间接一第一电压；绝缘层，设置于所述第二表面；栅极，设置于所述绝缘层远离所述半导体层的表面，所述栅极接一第二电压；其中，所述半导体层为氧化物半导体层，且当空穴和电子分别从所述漏极和源极注入所述氧化物半导体层，并在所述氧化物半导体层中复合时会产生光线射出。
进一步的，所述氧化物半导体层包括两层Ga-In-Zn-O层(GIZO)以及夹持于所述GIZO层之间的In-Zn-O层(IZO)。
进一步的，所述GIZO层的厚度为10纳米到50纳米。
进一步的，所述GIZO层的厚度为15纳米到30纳米。
进一步的，所述IZO层的厚度为30纳米到100纳米。
进一步的，所述IZO层的厚度为40纳米到60纳米。
本发明进一步提供一种自驱动发光薄膜晶体管阵列，包括：以阵列方式排布的多个上述的自驱动发光薄膜晶体管。
本发明进一步提供一种显示装置，包括，上述的自驱动发光薄膜晶体管阵列。
本发明提供的自驱动发光薄膜晶体管，及使用该自驱动发光薄膜晶体管的阵列及显示装置，当所述栅极接入所述第二电压时，所述半导体层会形成导空穴和电子的沟道，进一步的，在所述漏极和源极两端接入所述第一电压时，空穴和电子会在所述氧化物半导体层中复合，从而产生光线射出，这样就形成驱动和发光一体化的薄膜晶体管，即，薄膜晶体管作为自身发光的驱动元件，从而可以减少额外背光源的使用，降低成本。
附图说明
图1为本发明实施例提供的自驱动发光薄膜晶体管的结构示意图。
图2为本发明另一实施例提供的自驱动发光薄膜晶体管的结构示意图。
图3为本发明另一实施例提供的自驱动发光薄膜晶体管的结构示意图。
图4为本发明实施例提供的自驱动发光薄膜晶体管阵列的结构示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部结构。
请参照图1，一种自驱动发光薄膜晶体管10，包括：
半导体层14，包括第一表面以及第二表面；
源极12以及漏极11，间隔设置于所述第一表面，且源极12和漏极11之间接一第一电压VD；
绝缘层15，设置于所述第二表面；
栅极13，设置于所述绝缘层15远离所述半导体层14的表面，所述栅极13接一第二电压VG；其中，所述半导体层14为氧化物半导体层，且当空穴和电子分别从所述漏极11和源极12注入所述氧化物半导体层，并在所述氧化物半导体层中复合时会产生光线射出。
所述氧化物半导体层可以为单层结构或多层结构。本实施例中，所述氧化物半导体层包括两层Ga-In-Zn-O层141/143(GIZO)以及夹持于所述GIZO层141/143之间的In-Zn-O层142(IZO)。所述GIZO层141/143的厚度为纳米级，优选的，为10纳米到50纳米。更优选的，所述GIZO层的厚度为15纳米到30纳米。本实施例中，GIZO层141的厚度约为25纳米，而GIZO层143的厚度约为17纳米。所述IZO层142的厚度也为纳米级，优选的，为30纳米到100纳米；更优选的，所述IZO层的厚度为40纳米到60纳米。本实施例中，所述IZO层142的厚度约为50纳米。可以理解，所述氧化物半导体层可以掺杂其他元素以获得不同颜色的光线。
可以理解，当所述栅极13接入所述第二电压VG时，所述半导体层14会形成导空穴和电子的沟道，进一步的，在所述漏极11和源极12两端接入所述第一电压VD时，空穴和电子会在所述半导体层14中复合，从而产生光线射出，这样就形成一驱动和发光一体化的薄膜晶体管。
请参照图2，一种自驱动发光薄膜晶体管20，包括：
半导体层21，包括第一表面以及第二表面；
源极12以及漏极11，间隔设置于所述第一表面，且源极12和漏极11之间接一第一电压VD；
绝缘层15，设置于所述第二表面；
栅极13，设置于所述绝缘层15远离所述半导体层21的表面，所述栅极13接一第二电压VG；其中，所述半导体层21为氧化物半导体层，且当空穴和电子分别从所述漏极11和源极12注入所述氧化物半导体层，并在所述氧化物半导体层中复合时会产生光线射出。
本实施例中的自驱动发光薄膜晶体管20与自驱动发光薄膜晶体管10的结构基本相同，不同之处在于，所述半导体层21为双层结构，包括一层Ga-In-Zn-O层141以及一层In-Zn-O层142。
请参照图3，一种自驱动发光薄膜晶体管30，包括：
半导体层31，包括第一表面以及第二表面；
源极12以及漏极11，间隔设置于所述第一表面，且源极12和漏极11之间接一第一电压VD；
绝缘层15，设置于所述第二表面；
栅极13，设置于所述绝缘层15远离所述半导体层31的表面，所述栅极13接一第二电压VG；其中，所述半导体层31为氧化物半导体层，且当空穴和电子分别从所述漏极11和源极12注入所述氧化物半导体层，并在所述氧化物半导体层中复合时会产生光线射出。
本实施例中的自驱动发光薄膜晶体管30与自驱动发光薄膜晶体管10的结构基本相同，不同之处在于，所述半导体层31为单层结构，包括一层Ga-In-Zn-O层141。
请参照图4，本发明实施例进一步提供一种自驱动发光薄膜晶体管阵列100，包括：一基板40，以及
以阵列方式排布排布于所述基板40上的的多个上述的自驱动发光薄膜晶体管10/20/30。
其中，同一行或同一列中的自驱动发光薄膜晶体管10/20/30的源极12可以外接同一总线；同一行或同一列中的自驱动发光薄膜晶体管10/20/30的漏极11也可以外接同一总线；同一行或同一列中的自驱动发光薄膜晶体管10/20/30的栅极13也可以外接同一总线。
本发明进一步提供一种显示装置，包括，上述的自驱动发光薄膜晶体管阵列100以及其他的光学膜片。
注意，上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解，本发明不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此，虽然通过以上实施例对本发明进行了较为详细的说明，但是本发明不仅仅限于以上实施例，在不脱离本发明构思的情况下，还可以包括更多其他等效实施例，而本发明的范围由所附的权利要求范围决定。

Claims (9)

1.一种自驱动发光薄膜晶体管，其特征在于，包括：
半导体层包括第一表面以及第二表面；
源极以及漏极，间隔设置于所述第一表面，且源极和漏极之间接一第一电压；
绝缘层，设置于所述第二表面；
栅极，设置于所述绝缘层远离所述半导体层的表面，所述栅极接一第二电压；
其中，所述半导体层为氧化物半导体层，且当空穴和电子分别从所述漏极和源极注入所述氧化物半导体层，并在所述氧化物半导体层中复合时会产生光线射出。
2.根据权利要求1所述的自驱动发光薄膜晶体管，其特征在于，所述氧化物半导体层为单层结构或多层结构。
3.根据权利要求1所述的自驱动发光薄膜晶体管，其特征在于，所述氧化物半导体层包括两层Ga-In-Zn-O层(GIZO)以及夹持于所述GIZO层之间的In-Zn-O层(IZO)。
4.根据权利要求1所述的自驱动发光薄膜晶体管，其特征在于，所述GIZO层的厚度为10纳米到50纳米。
5.根据权利要求4所述的自驱动发光薄膜晶体管，其特征在于，所述GIZO层的厚度为15纳米到30纳米。
6.根据权利要求1所述的自驱动发光薄膜晶体管，其特征在于，所述IZO层的厚度为30纳米到100纳米。
7.根据权利要求6所述的自驱动发光薄膜晶体管，其特征在于，所述IZO层的厚度为40纳米到60纳米。
8.一种自驱动发光薄膜晶体管阵列，其特征在于，包括：
以阵列方式排布的多个如权利要求1-7任一项所述的自驱动发光薄膜晶体管。
9.一种显示装置，其特征在于，包括：
如权利要求8所述的自驱动发光薄膜晶体管阵列。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110998999A (zh) * 2017-07-31 2020-04-10 精工爱普生株式会社 发光装置以及投影仪
CN112467002A (zh) * 2020-11-25 2021-03-09 华南理工大学 一种氧化物发光场效应晶体管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1639881A (zh) * 2002-02-19 2005-07-13 Hoya株式会社 场效应晶体管类型发光器件
US20140291688A1 (en) * 2013-03-29 2014-10-02 Hon Hai Precision Industry Co., Ltd. Active matrix solid state light display
CN104094436A (zh) * 2012-02-27 2014-10-08 E.T.C.有限责任公司 具有分布式光发射的有机发光二极场效应晶体管
CN105006527A (zh) * 2015-06-16 2015-10-28 南京邮电大学 一种高亮度多色彩的有机发光场效应晶体管及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1639881A (zh) * 2002-02-19 2005-07-13 Hoya株式会社 场效应晶体管类型发光器件
CN104094436A (zh) * 2012-02-27 2014-10-08 E.T.C.有限责任公司 具有分布式光发射的有机发光二极场效应晶体管
US20140291688A1 (en) * 2013-03-29 2014-10-02 Hon Hai Precision Industry Co., Ltd. Active matrix solid state light display
CN105006527A (zh) * 2015-06-16 2015-10-28 南京邮电大学 一种高亮度多色彩的有机发光场效应晶体管及其制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110998999A (zh) * 2017-07-31 2020-04-10 精工爱普生株式会社 发光装置以及投影仪
CN110998999B (zh) * 2017-07-31 2021-10-22 精工爱普生株式会社 发光装置以及投影仪
US11394171B2 (en) 2017-07-31 2022-07-19 Seiko Epson Corporation Light emitting device and projector
CN112467002A (zh) * 2020-11-25 2021-03-09 华南理工大学 一种氧化物发光场效应晶体管
CN112467002B (zh) * 2020-11-25 2022-05-10 华南理工大学 一种氧化物发光场效应晶体管

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Application publication date: 20170517