CN104094436B - 具有分布式光发射的有机发光二极场效应晶体管 - Google Patents

具有分布式光发射的有机发光二极场效应晶体管 Download PDF

Info

Publication number
CN104094436B
CN104094436B CN201380006607.4A CN201380006607A CN104094436B CN 104094436 B CN104094436 B CN 104094436B CN 201380006607 A CN201380006607 A CN 201380006607A CN 104094436 B CN104094436 B CN 104094436B
Authority
CN
China
Prior art keywords
lumo
homo
scn
scp
energy level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380006607.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN104094436A (zh
Inventor
R·卡佩利
S·托法宁
G·吉纳拉利
M·穆西尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etc i L LLC
POLYERA CORP
Original Assignee
ETC SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ETC SRL filed Critical ETC SRL
Publication of CN104094436A publication Critical patent/CN104094436A/zh
Application granted granted Critical
Publication of CN104094436B publication Critical patent/CN104094436B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
CN201380006607.4A 2012-02-27 2013-02-21 具有分布式光发射的有机发光二极场效应晶体管 Active CN104094436B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2012A000284 2012-02-27
IT000284A ITMI20120284A1 (it) 2012-02-27 2012-02-27 Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita
PCT/IB2013/051400 WO2013128344A1 (en) 2012-02-27 2013-02-21 Organic light emitting ambipolar field effect transistor with distributed light emission

Publications (2)

Publication Number Publication Date
CN104094436A CN104094436A (zh) 2014-10-08
CN104094436B true CN104094436B (zh) 2016-08-24

Family

ID=45999947

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380006607.4A Active CN104094436B (zh) 2012-02-27 2013-02-21 具有分布式光发射的有机发光二极场效应晶体管

Country Status (8)

Country Link
US (1) US9006726B2 (enExample)
EP (1) EP2786437B1 (enExample)
JP (1) JP6025874B2 (enExample)
KR (1) KR101839649B1 (enExample)
CN (1) CN104094436B (enExample)
IT (1) ITMI20120284A1 (enExample)
TW (1) TWI573305B (enExample)
WO (1) WO2013128344A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP3021373A1 (en) * 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
JP6546400B2 (ja) * 2015-02-05 2019-07-17 株式会社ジャパンディスプレイ 表示装置
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
CN106684153A (zh) * 2015-11-05 2017-05-17 中国科学院宁波材料技术与工程研究所 自驱动发光薄膜晶体管，薄膜晶体管阵列及显示装置
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
US12262640B2 (en) * 2018-12-27 2025-03-25 Bio On S.P.A. Piezoelectric device comprising a membrane comprising fibres of a polyhydroxyalkanoate
CN111081740A (zh) * 2019-12-06 2020-04-28 深圳市华星光电半导体显示技术有限公司 一种显示面板
CN115207238B (zh) * 2022-07-01 2024-12-03 闽都创新实验室 一种具有光电双输出的发光突触晶体管及其制备方法
TWI864513B (zh) * 2022-11-30 2024-12-01 國立成功大學 發光裝置及發光裝置之製備方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1398146A (zh) * 2002-08-13 2003-02-19 清华大学 一种有机电致发光器件
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
CN1906777A (zh) * 2004-05-11 2007-01-31 Lg化学株式会社 有机电子器件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6970490B2 (en) * 2002-05-10 2005-11-29 The Trustees Of Princeton University Organic light emitting devices based on the formation of an electron-hole plasma
DE602004031596D1 (de) 2003-03-28 2011-04-14 Michele Muccini Organische elektrolumineszente vorrichtung
KR20070106976A (ko) * 2004-09-14 2007-11-06 노오쓰웨스턴 유니버시티 카르보닐-관능화 티오펜 화합물 및 관련 장치 구조물
WO2008059816A1 (en) * 2006-11-14 2008-05-22 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
JP2012507843A (ja) 2008-10-29 2012-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光用デュアルゲート電界効果トランジスタ、及び発光用デュアルゲート電界効果トランジスタの製造方法
JP5666474B2 (ja) * 2009-12-14 2015-02-12 出光興産株式会社 多環縮環化合物、及び、それを用いた有機薄膜トランジスタ
JP5588559B2 (ja) 2010-03-20 2014-09-10 ポリエラ コーポレイション ピロロ［３，２−ｂ］ピロール半導体化合物およびそれを組み込んだデバイス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1398146A (zh) * 2002-08-13 2003-02-19 清华大学 一种有机电致发光器件
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
CN1906777A (zh) * 2004-05-11 2007-01-31 Lg化学株式会社 有机电子器件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes;Raffaella Capelli 等;《nature materials》;20100601;第9卷(第6期);496-503页 *

Also Published As

Publication number Publication date
JP6025874B2 (ja) 2016-11-16
JP2015513795A (ja) 2015-05-14
KR20140126699A (ko) 2014-10-31
CN104094436A (zh) 2014-10-08
US20150001518A1 (en) 2015-01-01
US9006726B2 (en) 2015-04-14
TW201349606A (zh) 2013-12-01
EP2786437B1 (en) 2015-03-25
ITMI20120284A1 (it) 2013-08-28
TWI573305B (zh) 2017-03-01
EP2786437A1 (en) 2014-10-08
KR101839649B1 (ko) 2018-03-16
WO2013128344A1 (en) 2013-09-06

Similar Documents

Publication Publication Date Title
CN104094436B (zh) 具有分布式光发射的有机发光二极场效应晶体管
CN102906886B (zh) 用于在红外上转换装置上提供电荷阻挡层的方法和设备
CN108922978A (zh) 发光二极管及其制备方法
CN109148704B (zh) 量子点电致发光器件及其制备方法
US10483325B2 (en) Light emitting phototransistor
JP6742983B2 (ja) 有機エレクトロルミネッセンストランジスタ
KR101820786B1 (ko) 일렉트로루미네선트 유기 이중 게이트 트랜지스터
KR101595341B1 (ko) 전기발광 유기 트랜지스터
JP2018534760A (ja) 縦型電界効果トランジスタ
US9825261B2 (en) Organic electroluminescent transistor
CN102484072A (zh) 电流放大晶体管装置和电流放大发光晶体管装置
Cui et al. Light emitting field-effect transistors with vertical heterojunctions based on pentacene and tris-(8-hydroxyquinolinato) aluminum
Kim et al. Low-voltage organic light-emitting field-effect transistors using n-Dodecylphosphonic acid-passivated HfOx dielectrics
WO2019029234A1 (zh) 有机电致发光器件
El Amrani et al. Organic optocoupler consisting of an optimized blue organic light emitting diode and an organic photoconductor
US20200295275A1 (en) Superluminescent Halide Perovskite Light-Emitting Diodes with a Sub-Bandgap Turn-On Voltage
Tomova et al. Organic light-emitting diodes (OLEDs)–the basis of next generation light-emitting dеvices
US20220077407A1 (en) Superluminescent halide perovskite light-emitting diodes with a sub-bandgap turn-on voltage
Raza et al. Double-sided Emission of Inverted Quantum-dot Light Emitting Diode by Using Gold Nanowires (AuNW)
KR100588864B1 (ko) 유기전계발광소자의 에이징 방법
JP2024538298A (ja) 面光源から出射される平面型発光トランジスタ及びその製造方法並びに応用
Hang et al. Influence of Quantum Dot Layer on the Properties of Quantum Dot Light Emitting Diodes
Yoo et al. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer
Kim et al. 8.2: Semi‐transparent Inverted Quantum‐dot Light Emitting Diodes
UA82982U (uk) Спосіб виготовлення світловипромінюючого діода на основі нанокомпозитної органо-неорганічної гетероструктури

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Bologna, Italy

Patentee after: E.T.C. Limited Liability Company in Liquidation

Address before: Bologna, Italy

Patentee before: E.T.C. S.R.L.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20190313

Address after: Illinois Instrunment

Patentee after: POLYERA Corp.

Address before: Bologna, Italy

Patentee before: E.T.C. Limited Liability Company in Liquidation

TR01 Transfer of patent right