JP2017092191A5 - - Google Patents
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- Publication number
- JP2017092191A5 JP2017092191A5 JP2015218815A JP2015218815A JP2017092191A5 JP 2017092191 A5 JP2017092191 A5 JP 2017092191A5 JP 2015218815 A JP2015218815 A JP 2015218815A JP 2015218815 A JP2015218815 A JP 2015218815A JP 2017092191 A5 JP2017092191 A5 JP 2017092191A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- semiconductor device
- carbide semiconductor
- trench
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010271 silicon carbide Inorganic materials 0.000 claims 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 10
- 229910052735 hafnium Inorganic materials 0.000 claims 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052746 lanthanum Inorganic materials 0.000 claims 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015218815A JP2017092191A (ja) | 2015-11-06 | 2015-11-06 | 炭化珪素半導体装置 |
| PCT/JP2016/077776 WO2017077780A1 (ja) | 2015-11-06 | 2016-09-21 | 炭化珪素半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015218815A JP2017092191A (ja) | 2015-11-06 | 2015-11-06 | 炭化珪素半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017092191A JP2017092191A (ja) | 2017-05-25 |
| JP2017092191A5 true JP2017092191A5 (enExample) | 2018-03-01 |
Family
ID=58661812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015218815A Pending JP2017092191A (ja) | 2015-11-06 | 2015-11-06 | 炭化珪素半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2017092191A (enExample) |
| WO (1) | WO2017077780A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706230B (zh) * | 2017-09-28 | 2020-06-16 | 中国电子科技集团公司第五十五研究所 | 一种功率槽栅mos型器件及制备方法 |
| JP7062946B2 (ja) * | 2017-12-25 | 2022-05-09 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7540596B2 (ja) * | 2021-10-07 | 2024-08-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3773448B2 (ja) * | 2001-06-21 | 2006-05-10 | 松下電器産業株式会社 | 半導体装置 |
| JP2004214366A (ja) * | 2002-12-27 | 2004-07-29 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP2008091556A (ja) * | 2006-09-29 | 2008-04-17 | Toshiba Corp | 半導体装置 |
| JP2008243994A (ja) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | 半導体装置及びその製造方法 |
| WO2008139621A1 (ja) * | 2007-05-15 | 2008-11-20 | Canon Anelva Corporation | 半導体素子の製造方法 |
| JP5314964B2 (ja) * | 2008-08-13 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5638558B2 (ja) * | 2012-03-26 | 2014-12-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2015
- 2015-11-06 JP JP2015218815A patent/JP2017092191A/ja active Pending
-
2016
- 2016-09-21 WO PCT/JP2016/077776 patent/WO2017077780A1/ja not_active Ceased
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