JP2017092191A - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置 Download PDF

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Publication number
JP2017092191A
JP2017092191A JP2015218815A JP2015218815A JP2017092191A JP 2017092191 A JP2017092191 A JP 2017092191A JP 2015218815 A JP2015218815 A JP 2015218815A JP 2015218815 A JP2015218815 A JP 2015218815A JP 2017092191 A JP2017092191 A JP 2017092191A
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JP
Japan
Prior art keywords
trench
insulating film
silicon carbide
gate insulating
semiconductor device
Prior art date
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Pending
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JP2015218815A
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English (en)
Japanese (ja)
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JP2017092191A5 (enExample
Inventor
正人 登尾
Masato Noborio
正人 登尾
康裕 海老原
Yasuhiro Ebihara
康裕 海老原
高司 金村
Takashi Kanemura
高司 金村
智博 三村
Tomohiro Mimura
智博 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
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Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2015218815A priority Critical patent/JP2017092191A/ja
Priority to PCT/JP2016/077776 priority patent/WO2017077780A1/ja
Publication of JP2017092191A publication Critical patent/JP2017092191A/ja
Publication of JP2017092191A5 publication Critical patent/JP2017092191A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation

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  • Electrodes Of Semiconductors (AREA)
JP2015218815A 2015-11-06 2015-11-06 炭化珪素半導体装置 Pending JP2017092191A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015218815A JP2017092191A (ja) 2015-11-06 2015-11-06 炭化珪素半導体装置
PCT/JP2016/077776 WO2017077780A1 (ja) 2015-11-06 2016-09-21 炭化珪素半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015218815A JP2017092191A (ja) 2015-11-06 2015-11-06 炭化珪素半導体装置

Publications (2)

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JP2017092191A true JP2017092191A (ja) 2017-05-25
JP2017092191A5 JP2017092191A5 (enExample) 2018-03-01

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ID=58661812

Family Applications (1)

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JP2015218815A Pending JP2017092191A (ja) 2015-11-06 2015-11-06 炭化珪素半導体装置

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JP (1) JP2017092191A (enExample)
WO (1) WO2017077780A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023058209A1 (en) * 2021-10-07 2023-04-13 Fuji Electric Co., Ltd. Method of manufacturing silicon carbide semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706230B (zh) * 2017-09-28 2020-06-16 中国电子科技集团公司第五十五研究所 一种功率槽栅mos型器件及制备方法
JP7062946B2 (ja) * 2017-12-25 2022-05-09 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214366A (ja) * 2002-12-27 2004-07-29 Nec Electronics Corp 半導体装置及びその製造方法
JP2007194652A (ja) * 2001-06-21 2007-08-02 Matsushita Electric Ind Co Ltd 半導体装置
JP2008091556A (ja) * 2006-09-29 2008-04-17 Toshiba Corp 半導体装置
JP2008243994A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 半導体装置及びその製造方法
WO2008139621A1 (ja) * 2007-05-15 2008-11-20 Canon Anelva Corporation 半導体素子の製造方法
JP2010045210A (ja) * 2008-08-13 2010-02-25 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2013201308A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 半導体装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007194652A (ja) * 2001-06-21 2007-08-02 Matsushita Electric Ind Co Ltd 半導体装置
JP2004214366A (ja) * 2002-12-27 2004-07-29 Nec Electronics Corp 半導体装置及びその製造方法
JP2008091556A (ja) * 2006-09-29 2008-04-17 Toshiba Corp 半導体装置
JP2008243994A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 半導体装置及びその製造方法
WO2008139621A1 (ja) * 2007-05-15 2008-11-20 Canon Anelva Corporation 半導体素子の製造方法
JP2010045210A (ja) * 2008-08-13 2010-02-25 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2013201308A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 半導体装置及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023058209A1 (en) * 2021-10-07 2023-04-13 Fuji Electric Co., Ltd. Method of manufacturing silicon carbide semiconductor device
JP2023549110A (ja) * 2021-10-07 2023-11-22 富士電機株式会社 炭化珪素半導体装置の製造方法
JP7540596B2 (ja) 2021-10-07 2024-08-27 富士電機株式会社 炭化珪素半導体装置の製造方法

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Publication number Publication date
WO2017077780A1 (ja) 2017-05-11

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