JP2013247143A5 - - Google Patents

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Publication number
JP2013247143A5
JP2013247143A5 JP2012117676A JP2012117676A JP2013247143A5 JP 2013247143 A5 JP2013247143 A5 JP 2013247143A5 JP 2012117676 A JP2012117676 A JP 2012117676A JP 2012117676 A JP2012117676 A JP 2012117676A JP 2013247143 A5 JP2013247143 A5 JP 2013247143A5
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JP
Japan
Prior art keywords
layer
insulating film
oxide
charge storage
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012117676A
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English (en)
Japanese (ja)
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JP2013247143A (ja
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Publication date
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Priority to JP2012117676A priority Critical patent/JP2013247143A/ja
Priority claimed from JP2012117676A external-priority patent/JP2013247143A/ja
Publication of JP2013247143A publication Critical patent/JP2013247143A/ja
Publication of JP2013247143A5 publication Critical patent/JP2013247143A5/ja
Withdrawn legal-status Critical Current

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JP2012117676A 2012-05-23 2012-05-23 半導体装置 Withdrawn JP2013247143A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012117676A JP2013247143A (ja) 2012-05-23 2012-05-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012117676A JP2013247143A (ja) 2012-05-23 2012-05-23 半導体装置

Publications (2)

Publication Number Publication Date
JP2013247143A JP2013247143A (ja) 2013-12-09
JP2013247143A5 true JP2013247143A5 (enExample) 2015-06-25

Family

ID=49846722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012117676A Withdrawn JP2013247143A (ja) 2012-05-23 2012-05-23 半導体装置

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JP (1) JP2013247143A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543295B2 (en) 2014-09-04 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401432B2 (en) * 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2015114476A1 (en) * 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102481037B1 (ko) 2014-10-01 2022-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선층 및 그 제작 방법
US9991393B2 (en) * 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
TWI699897B (zh) 2014-11-21 2020-07-21 日商半導體能源研究所股份有限公司 半導體裝置
US10553690B2 (en) 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20170063112A1 (en) * 2015-08-31 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Power storage device with monitoring ic
US10096718B2 (en) 2016-06-17 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, electronic device, manufacturing method of transistor
JP7137913B2 (ja) * 2017-06-23 2022-09-15 株式会社半導体エネルギー研究所 半導体装置
WO2023281795A1 (ja) * 2021-07-09 2023-01-12 ソニーセミコンダクタソリューションズ株式会社 保護回路及び半導体装置
WO2025196596A1 (ja) * 2024-03-21 2025-09-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02310970A (ja) * 1989-05-25 1990-12-26 Nec Corp 不揮発性記憶装置
JP3424427B2 (ja) * 1995-07-27 2003-07-07 ソニー株式会社 不揮発性半導体メモリ装置
JP2004039965A (ja) * 2002-07-05 2004-02-05 Renesas Technology Corp 不揮発性半導体記憶装置
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
CN105023942B (zh) * 2009-12-28 2018-11-02 株式会社半导体能源研究所 制造半导体装置的方法
JP5705559B2 (ja) * 2010-06-22 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置、及び、半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543295B2 (en) 2014-09-04 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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