JP2015507099A - 無電解ニッケルリン合金をフレキシブル基板上に堆積するための方法 - Google Patents
無電解ニッケルリン合金をフレキシブル基板上に堆積するための方法 Download PDFInfo
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- JP2015507099A JP2015507099A JP2014556967A JP2014556967A JP2015507099A JP 2015507099 A JP2015507099 A JP 2015507099A JP 2014556967 A JP2014556967 A JP 2014556967A JP 2014556967 A JP2014556967 A JP 2014556967A JP 2015507099 A JP2015507099 A JP 2015507099A
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- Japan
- Prior art keywords
- phosphorus alloy
- alloy layer
- nickel phosphorus
- nickel
- flexible substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910001096 P alloy Inorganic materials 0.000 title claims abstract description 75
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000000151 deposition Methods 0.000 title claims description 29
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 113
- 238000007747 plating Methods 0.000 claims abstract description 59
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 239000008139 complexing agent Substances 0.000 claims abstract description 20
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 229910001453 nickel ion Inorganic materials 0.000 claims abstract description 14
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims abstract description 9
- -1 hypophosphite ions Chemical class 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 8
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 7
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 6
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 claims description 6
- 229940005631 hypophosphite ion Drugs 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- 150000001241 acetals Chemical class 0.000 claims description 3
- 150000007854 aminals Chemical class 0.000 claims description 3
- 150000002373 hemiacetals Chemical class 0.000 claims description 3
- UUGLSEIATNSHRI-UHFFFAOYSA-N 1,3,4,6-tetrakis(hydroxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound OCN1C(=O)N(CO)C2C1N(CO)C(=O)N2CO UUGLSEIATNSHRI-UHFFFAOYSA-N 0.000 claims description 2
- BEEHUIXXNCWWPG-UHFFFAOYSA-N 1,3-bis(hydroxymethyl)-1-[1,3,4-tris(hydroxymethyl)-2,5-dioxoimidazolidin-4-yl]urea Chemical compound OCNC(=O)N(CO)C1(CO)N(CO)C(=O)N(CO)C1=O BEEHUIXXNCWWPG-UHFFFAOYSA-N 0.000 claims description 2
- BXGYYDRIMBPOMN-UHFFFAOYSA-N 2-(hydroxymethoxy)ethoxymethanol Chemical group OCOCCOCO BXGYYDRIMBPOMN-UHFFFAOYSA-N 0.000 claims description 2
- QDCJIPFNVBDLRH-UHFFFAOYSA-N 5,5-dimethyl-1,3-dioxane Chemical compound CC1(C)COCOC1 QDCJIPFNVBDLRH-UHFFFAOYSA-N 0.000 claims description 2
- WVJOGYWFVNTSAU-UHFFFAOYSA-N dimethylol ethylene urea Chemical compound OCN1CCN(CO)C1=O WVJOGYWFVNTSAU-UHFFFAOYSA-N 0.000 claims description 2
- WSDISUOETYTPRL-UHFFFAOYSA-N dmdm hydantoin Chemical compound CC1(C)N(CO)C(=O)N(CO)C1=O WSDISUOETYTPRL-UHFFFAOYSA-N 0.000 claims description 2
- 108700019599 monomethylolglycine Proteins 0.000 claims description 2
- QUBQYFYWUJJAAK-UHFFFAOYSA-N oxymethurea Chemical compound OCNC(=O)NCO QUBQYFYWUJJAAK-UHFFFAOYSA-N 0.000 claims description 2
- PETXWIMJICIQTQ-UHFFFAOYSA-N phenylmethoxymethanol Chemical compound OCOCC1=CC=CC=C1 PETXWIMJICIQTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229940101011 sodium hydroxymethylglycinate Drugs 0.000 claims description 2
- CITBNDNUEPMTFC-UHFFFAOYSA-M sodium;2-(hydroxymethylamino)acetate Chemical compound [Na+].OCNCC([O-])=O CITBNDNUEPMTFC-UHFFFAOYSA-M 0.000 claims description 2
- DXTKRPKKCMBXGZ-UHFFFAOYSA-N 1-[1-(hydroxymethyl)-2,5-dioxoimidazolidin-4-yl]-3-[[[1-(hydroxymethyl)-2,5-dioxoimidazolidin-4-yl]carbamoylamino]methyl]urea Chemical compound O=C1N(CO)C(=O)NC1NC(=O)NCNC(=O)NC1C(=O)N(CO)C(=O)N1 DXTKRPKKCMBXGZ-UHFFFAOYSA-N 0.000 claims 1
- 229940046305 5-bromo-5-nitro-1,3-dioxane Drugs 0.000 claims 1
- LVDKZNITIUWNER-UHFFFAOYSA-N Bronopol Chemical compound OCC(Br)(CO)[N+]([O-])=O LVDKZNITIUWNER-UHFFFAOYSA-N 0.000 claims 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims 1
- XVBRCOKDZVQYAY-UHFFFAOYSA-N bronidox Chemical compound [O-][N+](=O)C1(Br)COCOC1 XVBRCOKDZVQYAY-UHFFFAOYSA-N 0.000 claims 1
- 238000005452 bending Methods 0.000 description 22
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 16
- 239000003381 stabilizer Substances 0.000 description 13
- JVTAAEKCZFNVCJ-REOHCLBHSA-N L-lactic acid Chemical compound C[C@H](O)C(O)=O JVTAAEKCZFNVCJ-REOHCLBHSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910001451 bismuth ion Inorganic materials 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 229940116298 l- malic acid Drugs 0.000 description 5
- 238000013019 agitation Methods 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- 239000000080 wetting agent Substances 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-UHFFFAOYSA-N Alanine Chemical compound CC([NH3+])C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 150000002763 monocarboxylic acids Chemical class 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical group O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- UOORRWUZONOOLO-UHFFFAOYSA-N 1,3-dichloropropene Chemical compound ClCC=CCl UOORRWUZONOOLO-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- QRPUOGYMBCDBEN-UHFFFAOYSA-N 5-bromo-5-nitro-1,3-dioxane 2-bromo-2-nitropropane-1,3-diol Chemical compound OCC(Br)(CO)[N+]([O-])=O.[O-][N+](=O)C1(Br)COCOC1 QRPUOGYMBCDBEN-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- CKLJMWTZIZZHCS-UHFFFAOYSA-N D-OH-Asp Natural products OC(=O)C(N)CC(O)=O CKLJMWTZIZZHCS-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- RNFNDJAIBTYOQL-UHFFFAOYSA-N chloral hydrate Chemical compound OC(O)C(Cl)(Cl)Cl RNFNDJAIBTYOQL-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 229940099690 malic acid Drugs 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 1
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M sodium bicarbonate Substances [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 150000003567 thiocyanates Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0277—Bendability or stretchability details
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- H05K3/22—Secondary treatment of printed circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
Abstract
Description
無電解めっきによって堆積されたニッケルリン合金の層は、プリント回路板、IC基板およびその種のものの製造において、しばしば、銅表面と、はんだ付け可能もしくはワイヤボンディング可能な材料、例えばパラジウムおよび/または金の層との間のバリア層として使用される。前記バリア層は、銅の回路要素または銅のコンタクト領域の銅表面と、貴金属層との間の望ましくない拡散を防ぐかまたは遅らせ、且つ、さらには、前記銅表面に対する防食をもたらす。硬質の基板上へのニッケルリン合金の無電解堆積は、成熟した技術である。
本発明の課題は、曲げることができるニッケルリン合金層をフレキシブル基板上に無電解堆積するための方法を提供することである。
前記の課題は、フレキシブル基板上に曲げることができるニッケルリン合金層を無電解堆積するための方法であって、
a. 少なくとも片側に銅の回路要素を施与されたフレキシブル基板を準備する段階、
b. 前記フレキシブル基板と、以下
i. ニッケルイオン、
ii. 次亜リン酸イオン、
iii. 少なくとも1つの錯化剤、および
iv. ホルムアルデヒドおよびホルムアルデヒド前駆体からなる群から選択される細粒化添加剤
を含む水性めっき浴とを接触させる段階、
をこの順で含み、それによって、フレキシブル基板の少なくとも片側上に施与された銅の回路要素上に、曲げることができるニッケルリン合金層を堆積する、前記方法によって解決される。
フレキシブルプリント回路板およびその種のものは、少なくとも1つの誘電体ベース材料のフィルムおよび前記フィルムの少なくとも片側上の銅の回路要素を含む。フレキシブルなベース材料のフィルムは、例えば12〜125μmの厚さであり、且つ、ポリマー材料、例えばポリイミド、フルオロポリマー、例えばTeflon(登録商標)、エポキシベースの複合材またはポリエステル、例えばPET製である。ベース材料のフィルムに施与された銅層において所望の回路パターンをエッチングすることによって銅の回路要素を形成することができる。
(図4に模式的に示されるように)両側に施与された平均厚さ37μmの銅の回路要素を有するフレキシブル基板材料(ポリイミドフィルム、25μm厚)を、酸性洗浄剤(Pro Select SF、Atotech Deutschland GmbHの製品、t=5分、T=40℃)で洗浄し、マイクロエッチングを行い(Micro Etch SF、Atotech Deutschland GmbHの製品、t=2分、T=30℃)、且つ、パラジウムの浸漬めっきによって活性化し(Aurotech(登録商標) Activator 1000、Atotech Deutschland GmbHの製品、t=50秒、T=22℃)、その後、フレキシブル基板と水性めっき浴とを接触させて、ニッケルリン合金層を堆積した。
フレキシブル基板片(サイズ:12×2cm)を、Jinan Drick Instruments Co., Ltd社製の耐折強さ試験機を用いて、繰り返しの曲げ試験に供した。試験片の上部の銅の回路要素1を図4に模式的に示す。銅の回路要素の線幅および線間の距離は100μmであった。コンタクトパッド2は、試験片と耐折強さ試験機とを電気的に接続するために使用される。試験片をその後、全ての例を通じて、ライン3に沿って曲げた。曲げ速度175rpmおよび負荷500gで、左右の折り曲げ角135°を適用した。曲げクランプの曲率Rは0.38mmであった。ニッケルリン合金層の望ましくないクラックが観察されたことを示す短絡までの曲げサイクルの数を記録した。
両側に施与された銅の回路要素を有するフレキシブル基板材料(ポリイミドフィルム)を、上述のとおり、曲げ試験に供する。
リン含有率11質量%を有するニッケルリン合金層を、5g/lのニッケルイオン、30g/lの次亜リン酸イオン、20g/lの乳酸、5g/lのリンゴ酸(錯化剤)および1mg/lの鉛イオン(安定剤)を含む水性めっき浴から堆積した。該ニッケルリン合金層は、厚さ3μmであった。
リン含有率11質量%を有するニッケルリン合金層を、5g/lのニッケルイオン、30g/lの次亜リン酸イオン、20g/lの乳酸、5g/lのリンゴ酸(錯化剤)および1mg/lのビスマスイオン(安定剤)を含む水性めっき浴から堆積した。該ニッケルリン合金層は、厚さ2.4μmであった。
リン含有率9質量%を有するニッケルリン合金層を、5g/lのニッケルイオン、30g/lの次亜リン酸イオン、20g/lの乳酸、5g/lのリンゴ酸(錯化剤)および1mg/lのメルカプトベンゾチアゾール(第一の安定剤)および1m/gのビスマスイオン(第二の安定剤)を含む水性めっき浴からUS2010/0155108号A1に従って堆積した。該ニッケルリン合金層は、厚さ2.6μmであった。
リン含有率12質量%を有するニッケルリン合金層を、5g/lのニッケルイオン、30g/lの次亜リン酸イオン、20g/lの乳酸、5g/lのリンゴ酸(錯化剤)、1mg/lの鉛イオン(安定剤)、および37質量%のホルムアルデヒドを含む0.3g/lのホルマリン溶液(細粒化添加剤)を含む水性めっき浴から堆積した。該ニッケルリン合金層は、厚さ3μmであった。
リン含有率11質量%を有するニッケルリン合金層を、5g/lのニッケルイオン、30g/lの次亜リン酸イオン、20g/lの乳酸、5g/lのリンゴ酸(錯化剤)、1mg/lの鉛イオン(安定剤)、および0.3g/lのウロトロピン(細粒化添加剤)を含む水性めっき浴から堆積した。該ニッケルリン合金層は、厚さ3μmであった。
Claims (12)
- フレキシブル基板上に曲げることができるニッケルリン合金層を無電解堆積するための方法であって、
a. 少なくとも片側に銅の回路要素を施与されたフレキシブル基板を準備する段階、
b. 前記フレキシブル基板と、以下
i. ニッケルイオン、
ii. 次亜リン酸イオン、
iii. 少なくとも1つの錯化剤、および
iv. ホルムアルデヒドおよびホルムアルデヒド前駆体からなる群から選択される細粒化添加剤
を含む水性めっき浴とを接触させる段階、
をこの順で含み、それによって、フレキシブル基板の少なくとも片側上に施与された銅の回路要素上に、曲げることができるニッケルリン合金層を堆積する前記方法。 - フレキシブル基板がフレキシブルプリント回路板である、請求項1に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- 水性めっき浴中のニッケルイオンの濃度が1〜18g/lの範囲である、請求項1または2に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- 次亜リン酸イオンの濃度が2〜60g/lの範囲である、請求項1から3までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- 少なくとも1つの錯化剤の濃度が1〜200g/lの範囲である、請求項1から4までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- 少なくとも1つの錯化剤が、カルボン酸、ヒドロキシカルボン酸およびアミノカルボン酸からなる群から選択される、請求項1から5までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- 細粒化添加剤の濃度が0.001〜1.0g/lの範囲である、請求項1から6までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- ホルムアルデヒド前駆体が、アセタール、ヘミアセタール、アミナールおよびN,O−アセタールを含む群から選択される、請求項1から7までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- ホルムアルデヒド前駆体が、ジメチロールグリコール、ヒドロキシメチルグリシン酸ナトリウム、1,3−ビス(ヒドロキシメチル)5,5−ジメチルイミダゾリジン−2,4−ジオン、1,3,5,7−テトラアザトリシクロ−[3.3.1.13,7]デカン、ベンジルヘミホルマール、2−ブロモ−2−ニトロプロパン−1,3−ジオール、5−ブロモ−5−ニトロ−1,3−ジオキサン、1,3−ビス(ヒドロキシメチル)−1−(1,3,4−トリス(ヒドロキシメチル)−2,5−ジオキソイミダゾリジン−4−イル)ウレア、1,1’−メチレンビス{3−[1−(ヒドロキシメチル)−2,5−ジオキソイミダゾリジン−4−イル]ウレア}、3,5,7−トリアザ−1−アゾニアトリシクロ−[3.3.1.13,7]−デカン−1−(3−クロロ−2−プロペニル)−クロリド、テトラメチロールグリコールウリル、1,3−ビス(ヒドロキシメチル)2−イミダゾリジノン、1,3−ビス(ヒドロキシメチル)ウレア、2,2,2−トリクロロエタン−1,1−ジオールおよび5,5−ジメチル−1,3−ジオキサンからなる群から選択される、請求項1から8までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- ニッケルリン合金の堆積の間、水性めっき浴を40〜95℃の温度で保持する、請求項1から9までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- フレキシブル基板を、前記水性めっき浴と1〜60分間接触させる、請求項1から10までのいずれか1項に記載の曲げることができるニッケルリン合金層を無電解堆積するための方法。
- フレキシブルプリント回路板の少なくとも片側上に形成された銅の回路要素と、前記銅の回路要素の少なくとも一部の上の曲げることができるニッケルリン合金層とを含むフレキシブルプリント回路板であって、ニッケルリン合金層が、請求項1から11までのいずれか1項に記載の方法によって堆積される前記フレキシブルプリント回路板。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021533267A (ja) * | 2018-08-03 | 2021-12-02 | ハッチンソン テクノロジー インコーポレイテッドHutchinson Technology Incorporated | ニッケルおよびリンを使用して回路用の材料を形成する方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104561951A (zh) * | 2014-07-04 | 2015-04-29 | 广东丹邦科技有限公司 | 化学镀镍磷合金的方法、镀液及镍磷合金层 |
US20170290145A1 (en) * | 2014-08-29 | 2017-10-05 | Tatsuta Electric Wire & Cable Co., Ltd. | Reinforcing member for flexible printed wiring board, and flexible printed wiring board provided with same |
TWI542729B (zh) * | 2015-07-09 | 2016-07-21 | 旭德科技股份有限公司 | 線路板及其製作方法 |
CN107190289A (zh) * | 2017-06-14 | 2017-09-22 | 深圳市呈永鑫精密电路有限公司 | 一种低磁高抗环境性的pcb板及其制备方法 |
US10468342B2 (en) * | 2018-02-02 | 2019-11-05 | Compass Technology Company, Ltd. | Formation of fine pitch traces using ultra-thin PAA modified fully additive process |
US10636734B2 (en) | 2018-02-02 | 2020-04-28 | Compass Technology Company, Ltd. | Formation of fine pitch traces using ultra-thin PAA modified fully additive process |
CN108342717B (zh) * | 2018-04-17 | 2020-04-14 | 世程新材料科技(武汉)有限公司 | 低温化学镀镍液、镀镍工艺、镀镍层及柔性印制电路板 |
JP7228411B2 (ja) | 2019-03-06 | 2023-02-24 | 上村工業株式会社 | 無電解金めっき浴 |
CN114616662A (zh) * | 2019-08-22 | 2022-06-10 | 金柏科技有限公司 | 使用超细paa改性全加成法制造精细间距走线的方法 |
CN110983309B (zh) * | 2019-12-26 | 2023-01-03 | 广东东硕科技有限公司 | 2-硫代海因类化合物或其盐的应用 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53112230A (en) * | 1976-12-27 | 1978-09-30 | Western Electric Co | Metallic evaporation method onto aluminium or aluminium alloy by using nonnelectric field metallic evaporation method |
JPS6343962A (ja) * | 1986-08-12 | 1988-02-25 | Shiseido Co Ltd | 雲母チタン系複合材料 |
JPH05295556A (ja) * | 1992-04-20 | 1993-11-09 | Deitsupusoole Kk | 無電解メッキ液及びそれを使用するメッキ方法 |
JPH0665749A (ja) * | 1991-09-17 | 1994-03-08 | Hitachi Chem Co Ltd | 無電解ニッケルリンめっき液 |
JP2001177222A (ja) * | 1999-12-15 | 2001-06-29 | Kyocera Corp | 配線基板の製造方法 |
US20040258847A1 (en) * | 2002-12-02 | 2004-12-23 | Shipley Company, L.L.C. | Method of measuring component loss |
JP2006206985A (ja) * | 2005-01-31 | 2006-08-10 | C Uyemura & Co Ltd | 無電解ニッケル−リンめっき皮膜及び無電解ニッケル−リンめっき浴 |
JP2010031361A (ja) * | 2008-07-01 | 2010-02-12 | C Uyemura & Co Ltd | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
US20100155108A1 (en) * | 2008-12-23 | 2010-06-24 | Samsung Electro-Mechanics Co., Ltd. | Electroless nickel plating solution composition, flexible printed circuit board and manufacturing method thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5916696A (en) * | 1996-06-06 | 1999-06-29 | Lucent Technologies Inc. | Conformable nickel coating and process for coating an article with a conformable nickel coating |
DE102006020988B4 (de) * | 2006-05-04 | 2012-08-30 | Nanogate Ag | Edelmetallhaltiges Nickelbad, dessen Verwendung zur Herstellung einer edelmetallhaltigen Nickelschicht, edelmetallhaltige Nickelschicht sowie deren Verwendung |
CN101853789B (zh) * | 2010-05-07 | 2011-09-28 | 深圳丹邦科技股份有限公司 | 一种柔性封装载板焊盘金手指制作方法 |
CN102268658A (zh) * | 2011-07-22 | 2011-12-07 | 深圳市精诚达电路有限公司 | 一种化学镀镍液及化学镀镍工艺 |
-
2012
- 2012-02-16 EP EP12155801.9A patent/EP2628824B1/en active Active
-
2013
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53112230A (en) * | 1976-12-27 | 1978-09-30 | Western Electric Co | Metallic evaporation method onto aluminium or aluminium alloy by using nonnelectric field metallic evaporation method |
JPS6343962A (ja) * | 1986-08-12 | 1988-02-25 | Shiseido Co Ltd | 雲母チタン系複合材料 |
JPH0665749A (ja) * | 1991-09-17 | 1994-03-08 | Hitachi Chem Co Ltd | 無電解ニッケルリンめっき液 |
JPH05295556A (ja) * | 1992-04-20 | 1993-11-09 | Deitsupusoole Kk | 無電解メッキ液及びそれを使用するメッキ方法 |
JP2001177222A (ja) * | 1999-12-15 | 2001-06-29 | Kyocera Corp | 配線基板の製造方法 |
US20040258847A1 (en) * | 2002-12-02 | 2004-12-23 | Shipley Company, L.L.C. | Method of measuring component loss |
JP2006206985A (ja) * | 2005-01-31 | 2006-08-10 | C Uyemura & Co Ltd | 無電解ニッケル−リンめっき皮膜及び無電解ニッケル−リンめっき浴 |
JP2010031361A (ja) * | 2008-07-01 | 2010-02-12 | C Uyemura & Co Ltd | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
US20100155108A1 (en) * | 2008-12-23 | 2010-06-24 | Samsung Electro-Mechanics Co., Ltd. | Electroless nickel plating solution composition, flexible printed circuit board and manufacturing method thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021533267A (ja) * | 2018-08-03 | 2021-12-02 | ハッチンソン テクノロジー インコーポレイテッドHutchinson Technology Incorporated | ニッケルおよびリンを使用して回路用の材料を形成する方法 |
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KR20140127319A (ko) | 2014-11-03 |
US20150009638A1 (en) | 2015-01-08 |
US9089062B2 (en) | 2015-07-21 |
JP6066131B2 (ja) | 2017-01-25 |
CN104105819B (zh) | 2016-06-22 |
EP2628824A1 (en) | 2013-08-21 |
CN104105819A (zh) | 2014-10-15 |
KR102096117B1 (ko) | 2020-04-02 |
TW201341588A (zh) | 2013-10-16 |
EP2628824B1 (en) | 2014-09-17 |
WO2013120660A1 (en) | 2013-08-22 |
TWI602949B (zh) | 2017-10-21 |
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