JP2015220344A5 - - Google Patents

Download PDF

Info

Publication number
JP2015220344A5
JP2015220344A5 JP2014102998A JP2014102998A JP2015220344A5 JP 2015220344 A5 JP2015220344 A5 JP 2015220344A5 JP 2014102998 A JP2014102998 A JP 2014102998A JP 2014102998 A JP2014102998 A JP 2014102998A JP 2015220344 A5 JP2015220344 A5 JP 2015220344A5
Authority
JP
Japan
Prior art keywords
electrode region
region
semiconductor device
semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014102998A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015220344A (ja
JP6207460B2 (ja
Filing date
Publication date
Priority claimed from JP2014102998A external-priority patent/JP6207460B2/ja
Priority to JP2014102998A priority Critical patent/JP6207460B2/ja
Application filed filed Critical
Priority to US14/640,425 priority patent/US20150333043A1/en
Priority to DE102015208589.9A priority patent/DE102015208589A1/de
Priority to CN201510257741.2A priority patent/CN105097738B/zh
Publication of JP2015220344A publication Critical patent/JP2015220344A/ja
Publication of JP2015220344A5 publication Critical patent/JP2015220344A5/ja
Publication of JP6207460B2 publication Critical patent/JP6207460B2/ja
Application granted granted Critical
Priority to US15/950,484 priority patent/US20180233434A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014102998A 2014-05-19 2014-05-19 半導体装置 Active JP6207460B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014102998A JP6207460B2 (ja) 2014-05-19 2014-05-19 半導体装置
US14/640,425 US20150333043A1 (en) 2014-05-19 2015-03-06 Semiconductor device
DE102015208589.9A DE102015208589A1 (de) 2014-05-19 2015-05-08 Halbleitervorrichtung
CN201510257741.2A CN105097738B (zh) 2014-05-19 2015-05-19 半导体装置
US15/950,484 US20180233434A1 (en) 2014-05-19 2018-04-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014102998A JP6207460B2 (ja) 2014-05-19 2014-05-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2015220344A JP2015220344A (ja) 2015-12-07
JP2015220344A5 true JP2015220344A5 (enExample) 2016-06-16
JP6207460B2 JP6207460B2 (ja) 2017-10-04

Family

ID=54361885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014102998A Active JP6207460B2 (ja) 2014-05-19 2014-05-19 半導体装置

Country Status (4)

Country Link
US (2) US20150333043A1 (enExample)
JP (1) JP6207460B2 (enExample)
CN (1) CN105097738B (enExample)
DE (1) DE102015208589A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017007902T5 (de) * 2017-09-28 2020-05-14 Mitsubishi Electric Corporation Chopper-Modul vom 2-in-1-Typ
JP7170272B2 (ja) * 2019-03-27 2022-11-14 ネクスファイ・テクノロジー株式会社 パワー基板とそれを備えた高電圧モジュール
JP7156155B2 (ja) * 2019-04-19 2022-10-19 三菱電機株式会社 半導体モジュール
DE102022208031A1 (de) * 2022-08-03 2024-02-08 Siemens Aktiengesellschaft Halbleiterbauelement

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2580804B2 (ja) * 1989-06-23 1997-02-12 富士電機株式会社 電力変換装置用トランジスタモジュール
DE19639279C2 (de) * 1996-09-25 2002-01-17 Daimlerchrysler Rail Systems Stromrichterschaltung
US5874826A (en) * 1997-10-29 1999-02-23 Lucent Technologies Inc. Encapsulated modular boost converter and method of manufacture therefor
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
JP4004715B2 (ja) * 2000-05-31 2007-11-07 三菱電機株式会社 パワーモジュール
WO2002084873A1 (en) * 2001-03-28 2002-10-24 Koninklijke Philips Electronics N.V. Synchronous rectifiers
US6975023B2 (en) * 2002-09-04 2005-12-13 International Rectifier Corporation Co-packaged control circuit, transistor and inverted diode
JP4239580B2 (ja) * 2002-12-13 2009-03-18 株式会社デンソー 半導体装置
JP2005197554A (ja) * 2004-01-09 2005-07-21 Mitsubishi Electric Corp 半導体装置
JP2007027432A (ja) * 2005-07-15 2007-02-01 Sanken Electric Co Ltd 半導体装置
JP2008244388A (ja) 2007-03-29 2008-10-09 Nec Electronics Corp 半導体装置
JP2009043820A (ja) * 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
US7781872B2 (en) * 2007-12-19 2010-08-24 Fairchild Semiconductor Corporation Package with multiple dies
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
JP5921055B2 (ja) * 2010-03-08 2016-05-24 ルネサスエレクトロニクス株式会社 半導体装置
KR101192181B1 (ko) * 2010-03-31 2012-10-17 (주)포인트엔지니어링 광 소자 디바이스 및 그 제조 방법
WO2014034411A1 (ja) * 2012-08-27 2014-03-06 三菱電機株式会社 電力用半導体装置
US8963303B2 (en) * 2013-02-22 2015-02-24 Stmicroelectronics S.R.L. Power electronic device
US9536800B2 (en) * 2013-12-07 2017-01-03 Fairchild Semiconductor Corporation Packaged semiconductor devices and methods of manufacturing

Similar Documents

Publication Publication Date Title
JP5724314B2 (ja) パワー半導体モジュール
JP5492367B2 (ja) 窒化ガリウム半導体デバイス用のパッケージ
US8736040B2 (en) Power module with current routing
US20150235923A1 (en) Semiconductor device
JP6391845B2 (ja) 半導体装置およびそれを備える半導体モジュール
US10276552B2 (en) Semiconductor module
EP3104412A1 (en) Power semiconductor module
JP2015220344A5 (enExample)
CN104167401A (zh) 用于功率变换器的多芯片封装结构
JP6207460B2 (ja) 半導体装置
CN100521192C (zh) 半导体装置及其制造方法
JP2017038020A (ja) 半導体モジュール
US20160036343A1 (en) Semiconductor device
JP2017079307A (ja) 半導体装置および半導体装置の製造方法
US7755167B2 (en) Semiconductor device including switching element and two diodes
JP6327105B2 (ja) 半導体装置
US20160285445A1 (en) Semiconductor device, inverter circuit, driving device, vehicle, and elevator
JP2015201947A (ja) パワー半導体デバイス
JP6227141B2 (ja) 電力用半導体装置
US10546806B2 (en) Semiconductor apparatus
JP2023044583A (ja) 半導体装置
JP6383614B2 (ja) コンデンサモジュール及びパワーユニット
JP2015029040A (ja) 半導体モジュール、led駆動装置及びled照明装置
JP2016058505A (ja) パワーモジュール及びパワーユニット
JP5866792B2 (ja) 電力変換装置