JP2015195288A5 - - Google Patents

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Publication number
JP2015195288A5
JP2015195288A5 JP2014072821A JP2014072821A JP2015195288A5 JP 2015195288 A5 JP2015195288 A5 JP 2015195288A5 JP 2014072821 A JP2014072821 A JP 2014072821A JP 2014072821 A JP2014072821 A JP 2014072821A JP 2015195288 A5 JP2015195288 A5 JP 2015195288A5
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JP
Japan
Prior art keywords
drain electrode
field plate
gate electrode
electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014072821A
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English (en)
Japanese (ja)
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JP2015195288A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014072821A priority Critical patent/JP2015195288A/ja
Priority claimed from JP2014072821A external-priority patent/JP2015195288A/ja
Priority to US14/673,039 priority patent/US9620409B2/en
Publication of JP2015195288A publication Critical patent/JP2015195288A/ja
Publication of JP2015195288A5 publication Critical patent/JP2015195288A5/ja
Pending legal-status Critical Current

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JP2014072821A 2014-03-31 2014-03-31 半導体装置及び半導体装置の製造方法 Pending JP2015195288A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014072821A JP2015195288A (ja) 2014-03-31 2014-03-31 半導体装置及び半導体装置の製造方法
US14/673,039 US9620409B2 (en) 2014-03-31 2015-03-30 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014072821A JP2015195288A (ja) 2014-03-31 2014-03-31 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2015195288A JP2015195288A (ja) 2015-11-05
JP2015195288A5 true JP2015195288A5 (enExample) 2017-06-01

Family

ID=54191422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014072821A Pending JP2015195288A (ja) 2014-03-31 2014-03-31 半導体装置及び半導体装置の製造方法

Country Status (2)

Country Link
US (1) US9620409B2 (enExample)
JP (1) JP2015195288A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332498B (zh) * 2014-09-01 2018-01-05 苏州捷芯威半导体有限公司 一种斜场板功率器件及斜场板功率器件的制备方法
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP6540461B2 (ja) 2015-10-30 2019-07-10 富士通株式会社 半導体装置及び半導体装置の製造方法
DE112017000081B4 (de) * 2016-03-14 2022-12-29 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren
JP2019047055A (ja) * 2017-09-06 2019-03-22 住友電気工業株式会社 トランジスタ
JP6978151B2 (ja) * 2017-09-28 2021-12-08 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法および半導体装置
JP6981601B2 (ja) * 2018-05-29 2021-12-15 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP7307856B2 (ja) 2020-05-13 2023-07-12 ヌヴォトンテクノロジージャパン株式会社 電力増幅用半導体装置
WO2022006731A1 (en) * 2020-07-07 2022-01-13 Innoscience (Zhuhai) Technology Co., Ltd. Semiconductor device and fabrication method thereof
DE102021115509A1 (de) * 2020-07-31 2022-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Galliumnitrid-basierte vorrichtung mit stufenartiger feldplatte und verfahren zu deren herstellung
US11791389B2 (en) 2021-01-08 2023-10-17 Wolfspeed, Inc. Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
US12027616B1 (en) * 2021-02-03 2024-07-02 Global Communication Semiconductors, Llc Embedded non-overlapping source field design for improved GaN HEMT microwave performance
JPWO2022172588A1 (enExample) * 2021-02-10 2022-08-18
US20220376060A1 (en) * 2021-05-20 2022-11-24 Nxp Usa, Inc. Semiconductor device with conductive element formed over dielectric layers and method of fabrication therefor
CN117546303A (zh) * 2021-07-01 2024-02-09 罗姆股份有限公司 氮化物半导体装置
US12342560B2 (en) * 2021-12-20 2025-06-24 Nxp Usa, Inc. Transistors with source-connected field plates
US12349433B2 (en) 2021-12-20 2025-07-01 Nxp Usa, Inc. Transistors with self-aligned source-connected field plates
US12148820B2 (en) 2021-12-20 2024-11-19 Nxp B.V. Transistors with source-connected field plates
US20230207640A1 (en) * 2021-12-29 2023-06-29 Nxp Usa, Inc. Transistor gate structure with insulating layer and method of fabrication therefor
CN118974948A (zh) * 2022-03-29 2024-11-15 新唐科技日本株式会社 半导体装置
CN117916866A (zh) * 2022-06-15 2024-04-19 英诺赛科(苏州)半导体有限公司 基于氮化物的半导体器件及其制造方法
US20240194751A1 (en) * 2022-12-09 2024-06-13 Wolfspeed, Inc. Transistor devices including self-aligned ohmic contacts and contact regions and related fabrication methods

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693426A (ja) * 1992-09-11 1994-04-05 Hitachi Ltd 薄膜形成装置
KR101128376B1 (ko) * 2003-09-09 2012-03-23 크리, 인코포레이티드 단일 또는 다중 게이트 필드 플레이트의 제조
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
JP2008288289A (ja) * 2007-05-16 2008-11-27 Oki Electric Ind Co Ltd 電界効果トランジスタとその製造方法
US7800132B2 (en) * 2007-10-25 2010-09-21 Northrop Grumman Systems Corporation High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置
JP5845638B2 (ja) 2011-06-02 2016-01-20 住友電気工業株式会社 半導体装置

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