JP5845638B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5845638B2 JP5845638B2 JP2011124288A JP2011124288A JP5845638B2 JP 5845638 B2 JP5845638 B2 JP 5845638B2 JP 2011124288 A JP2011124288 A JP 2011124288A JP 2011124288 A JP2011124288 A JP 2011124288A JP 5845638 B2 JP5845638 B2 JP 5845638B2
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 150000004767 nitrides Chemical class 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 230000007423 decrease Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000001629 suppression Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
ゲート長 :0.6μm
ゲート・ドレイン間距離L2:5.5μm
絶縁膜20の厚さ :450nm
11 窒化物半導体層
12 バリア層
14 チャネル層
16 電子供給層
18 キャップ層
20、22 絶縁膜
24 ソース電極
26 ドレイン電極
28 ゲート電極
30 フィールドプレート
100 FET
Claims (7)
- 基板と、
前記基板上に形成され、チャネル層及び電子供給層を含む窒化物半導体層と、
前記窒化物半導体層上に設けられたソース電極、ゲート電極、及びドレイン電極と、
少なくとも前記ゲート電極、及び前記ゲート電極と前記ドレイン電極との間の前記窒化物半導体層の表面を覆う絶縁膜と、
前記窒化物半導体層上であって、前記ゲート電極と前記ドレイン電極との間に設けられ、前記ソース電極と電気的に接続されたフィールドプレートと、を具備し、
前記ゲート電極の側面を覆う領域を除いた、前記ゲート電極と前記ドレイン電極との間の領域の前記絶縁膜上における前記フィールドプレートの幅は0.1μm以上、1.6μm以下であり、
前記フィールドプレートの前記ドレイン電極側の端部と、前記窒化物半導体層と前記ドレイン電極との接触面における前記ドレイン電極の前記ゲート電極側の端部との距離は、3.5μm以上、7μm以下であり、
動作周波数が4GHz以下、2.6GHz以上であり、
前記絶縁膜の厚さは400〜500nmであり、
前記絶縁膜は窒化シリコンからなり、前記チャネル層は窒化ガリウムからなり、前記電子供給層は窒化アルミニウムガリウムからなることを特徴とする半導体装置。 - 前記ドレイン電極と前記ソース電極との間の容量は0.2pF/mm以下であることを特徴とする請求項1記載の半導体装置。
- 前記フィールドプレートの幅は0.2μm以上であることを特徴とする請求項1又は2記載の半導体装置。
- 前記絶縁膜は、少なくとも前記ゲート電極の上面及び側面、及び前記ゲート電極と前記ドレイン電極との間の前記窒化物半導体層の表面に接触し、
前記フィールドプレートは前記絶縁膜の表面を覆うことを特徴とする請求項1記載の半導体装置。 - 前記電子供給層は前記チャネル層の上に設けられ、
前記絶縁膜は前記電子供給層の上に設けられていることを特徴とする請求項1から4のいずれか一項記載の半導体装置。 - 前記窒化物半導体層はキャップ層を含み、
前記キャップ層は前記電子供給層の上に設けられ、
前記絶縁膜は前記キャップ層の上に設けられていることを特徴とする請求項1から5のいずれか一項記載の半導体装置。 - 前記半導体装置は、エンベローブトラッキングアンプの増幅素子として使用されることを特徴とする請求項1記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011124288A JP5845638B2 (ja) | 2011-06-02 | 2011-06-02 | 半導体装置 |
US13/487,761 US8629454B2 (en) | 2011-06-02 | 2012-06-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011124288A JP5845638B2 (ja) | 2011-06-02 | 2011-06-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012253181A JP2012253181A (ja) | 2012-12-20 |
JP5845638B2 true JP5845638B2 (ja) | 2016-01-20 |
Family
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JP2011124288A Active JP5845638B2 (ja) | 2011-06-02 | 2011-06-02 | 半導体装置 |
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US (1) | US8629454B2 (ja) |
JP (1) | JP5845638B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8772833B2 (en) * | 2011-09-21 | 2014-07-08 | Electronics And Telecommunications Research Institute | Power semiconductor device and fabrication method thereof |
JP2014086707A (ja) * | 2012-10-26 | 2014-05-12 | Furukawa Electric Co Ltd:The | 半導体装置およびその製造方法、並びにショットキーバリアダイオードおよび電界効果トランジスタ |
TWI555209B (zh) * | 2013-07-29 | 2016-10-21 | 高效電源轉換公司 | 具有降低的輸出電容之氮化鎵裝置及其製法 |
CN103594508A (zh) * | 2013-11-26 | 2014-02-19 | 电子科技大学 | 一种栅单场板的氮化镓高电子迁移率晶体管 |
JP2015195288A (ja) | 2014-03-31 | 2015-11-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び半導体装置の製造方法 |
CN104393043B (zh) * | 2014-11-18 | 2017-04-19 | 西安电子科技大学 | 氮化镓基直角漏场板高电子迁移率晶体管 |
WO2016157718A1 (ja) * | 2015-04-02 | 2016-10-06 | パナソニック株式会社 | 窒化物半導体装置 |
US10056478B2 (en) * | 2015-11-06 | 2018-08-21 | Taiwan Semiconductor Manufacturing Company Ltd. | High-electron-mobility transistor and manufacturing method thereof |
CN107316892B (zh) * | 2017-06-23 | 2020-08-21 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107275385B (zh) * | 2017-06-23 | 2020-08-21 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107248526B (zh) * | 2017-06-23 | 2020-10-16 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107316890A (zh) * | 2017-06-23 | 2017-11-03 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107393963B (zh) * | 2017-06-23 | 2020-09-25 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107248524B (zh) * | 2017-06-23 | 2020-08-21 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107316893A (zh) * | 2017-06-23 | 2017-11-03 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107293578B (zh) * | 2017-06-23 | 2020-08-07 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
US20210193805A1 (en) * | 2019-12-18 | 2021-06-24 | Monolithic Power Systems, Inc. | Lateral transistor with lateral conductive field plate over a field plate positioning layer |
WO2022067644A1 (en) * | 2020-09-30 | 2022-04-07 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
Family Cites Families (5)
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JP3723780B2 (ja) | 2002-03-29 | 2005-12-07 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
JP4902131B2 (ja) * | 2005-03-31 | 2012-03-21 | 住友電工デバイス・イノベーション株式会社 | 半導体装置およびその製造方法 |
WO2006132418A1 (ja) * | 2005-06-10 | 2006-12-14 | Nec Corporation | 電界効果トランジスタ |
TW200735361A (en) * | 2005-12-14 | 2007-09-16 | Koninkl Philips Electronics Nv | MOS transistor and a method of manufacturing a MOS transistor |
JPWO2008099489A1 (ja) * | 2007-02-15 | 2010-05-27 | パナソニック株式会社 | 電力増幅器 |
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2011
- 2011-06-02 JP JP2011124288A patent/JP5845638B2/ja active Active
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2012
- 2012-06-04 US US13/487,761 patent/US8629454B2/en active Active
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Publication number | Publication date |
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JP2012253181A (ja) | 2012-12-20 |
US20120305936A1 (en) | 2012-12-06 |
US8629454B2 (en) | 2014-01-14 |
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