JP2012253181A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】基板10と、基板10上に形成された窒化物半導体層11と、窒化物半導体層11上に設けられたソース電極24、ゲート電極28、及びドレイン電極26と、ゲート電極28、及びゲート電極28とドレイン電極26との間の窒化物半導体層11の表面を覆う絶縁膜20と、窒化物半導体層11上であって、ゲート電極28とドレイン電極26との間に設けられたフィールドプレート30と、を具備し、ゲート電極28とドレイン電極26との間の領域の絶縁膜20上におけるフィールドプレート30の幅Wは0.1μm以上であり、フィールドプレート30のドレイン電極26側の端部と、ドレイン電極26のゲート電極28側の端部との距離L1は、3.5μm以上であり、動作周波数が4GHz以下である半導体装置である。
【選択図】図3
Description
ゲート長 :0.6μm
ゲート・ドレイン間距離L2:5.5μm
絶縁膜20の厚さ :450nm
11 窒化物半導体層
12 バリア層
14 チャネル層
16 電子供給層
18 キャップ層
20、22 絶縁膜
24 ソース電極
26 ドレイン電極
28 ゲート電極
30 フィールドプレート
100 FET
Claims (9)
- 基板と、
前記基板上に形成され、チャネル層及び電子供給層を含む窒化物半導体層と、
前記窒化物半導体層上に設けられたソース電極、ゲート電極、及びドレイン電極と、
少なくとも前記ゲート電極、及び前記ゲート電極と前記ドレイン電極との間の前記窒化物半導体層の表面を覆う絶縁膜と、
前記窒化物半導体層上であって、前記ゲート電極と前記ドレイン電極との間に設けられたフィールドプレートと、を具備し、
前記ゲート電極の側面を覆う領域を除いた、前記ゲート電極と前記ドレイン電極との間の領域の前記絶縁膜上における前記フィールドプレートの幅は0.1μm以上であり、
前記フィールドプレートの前記ドレイン電極側の端部と、前記窒化物半導体層と前記ドレイン電極との接触面における前記ドレイン電極の前記ゲート電極側の端部との距離は、3.5μm以上であり、
動作周波数が4GHz以下であることを特徴とする半導体装置。 - 前記ドレイン電極と前記ソース電極との間の容量は0.2pF/mm以下であることを特徴とする請求項1記載の半導体装置。
- 前記フィールドプレートの幅は0.2μm以上であることを特徴とする請求項1又は2記載の半導体装置。
- 前記ゲート電極の前記窒化物半導体層と前記ゲート電極との接触面における前記ドレイン電極側の端部と、前記ドレイン電極の前記窒化物半導体層と前記ドレイン電極との接触面における前記ゲート電極側の端部との距離は、7μm以下であることを特徴とする請求項1から3いずれか一項記載の半導体装置。
- 前記前記絶縁膜の厚さは400〜500nmであることを特徴とする請求項1記載の半導体装置。
- 前記絶縁膜は窒化シリコンからなることを特徴とする請求項5記載の半導体装置。
- 前記チャネル層は窒化ガリウムからなり、前記電子供給層は窒化アルミニウムガリウムからなることを特徴とする請求項1から6いずれか一項記載の半導体装置。
- 前記半導体装置の動作周波数は、2.6GHz以上であることを特徴とする請求項1記載の半導体装置。
- 前記半導体装置は、エンベローブトラッキングアンプの増幅素子として使用されることを特徴とする請求項1記載の半導体装置。
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JP2011124288A JP5845638B2 (ja) | 2011-06-02 | 2011-06-02 | 半導体装置 |
US13/487,761 US8629454B2 (en) | 2011-06-02 | 2012-06-04 | Semiconductor device |
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JP2011124288A JP5845638B2 (ja) | 2011-06-02 | 2011-06-02 | 半導体装置 |
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JP5845638B2 JP5845638B2 (ja) | 2016-01-20 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9620409B2 (en) | 2014-03-31 | 2017-04-11 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
JPWO2016157718A1 (ja) * | 2015-04-02 | 2018-01-25 | パナソニック株式会社 | 窒化物半導体装置 |
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US8772833B2 (en) * | 2011-09-21 | 2014-07-08 | Electronics And Telecommunications Research Institute | Power semiconductor device and fabrication method thereof |
JP2014086707A (ja) * | 2012-10-26 | 2014-05-12 | Furukawa Electric Co Ltd:The | 半導体装置およびその製造方法、並びにショットキーバリアダイオードおよび電界効果トランジスタ |
TWI555209B (zh) * | 2013-07-29 | 2016-10-21 | 高效電源轉換公司 | 具有降低的輸出電容之氮化鎵裝置及其製法 |
CN103594508A (zh) * | 2013-11-26 | 2014-02-19 | 电子科技大学 | 一种栅单场板的氮化镓高电子迁移率晶体管 |
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US10056478B2 (en) * | 2015-11-06 | 2018-08-21 | Taiwan Semiconductor Manufacturing Company Ltd. | High-electron-mobility transistor and manufacturing method thereof |
CN107275385B (zh) * | 2017-06-23 | 2020-08-21 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107293578B (zh) * | 2017-06-23 | 2020-08-07 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
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CN107316893A (zh) * | 2017-06-23 | 2017-11-03 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107316890A (zh) * | 2017-06-23 | 2017-11-03 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107248526B (zh) * | 2017-06-23 | 2020-10-16 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107316892B (zh) * | 2017-06-23 | 2020-08-21 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
CN107393963B (zh) * | 2017-06-23 | 2020-09-25 | 深圳市晶相技术有限公司 | 氮化镓半导体器件及其制备方法 |
US20210193805A1 (en) * | 2019-12-18 | 2021-06-24 | Monolithic Power Systems, Inc. | Lateral transistor with lateral conductive field plate over a field plate positioning layer |
CN114586175B (zh) * | 2020-09-30 | 2023-04-18 | 英诺赛科(苏州)科技有限公司 | 半导体器件以及制造半导体器件的方法 |
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JP3723780B2 (ja) | 2002-03-29 | 2005-12-07 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
JP4902131B2 (ja) * | 2005-03-31 | 2012-03-21 | 住友電工デバイス・イノベーション株式会社 | 半導体装置およびその製造方法 |
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WO2006132418A1 (ja) * | 2005-06-10 | 2006-12-14 | Nec Corporation | 電界効果トランジスタ |
JP2009519600A (ja) * | 2005-12-14 | 2009-05-14 | エヌエックスピー ビー ヴィ | Mosトランジスタおよびその製造方法 |
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Cited By (2)
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US9620409B2 (en) | 2014-03-31 | 2017-04-11 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
JPWO2016157718A1 (ja) * | 2015-04-02 | 2018-01-25 | パナソニック株式会社 | 窒化物半導体装置 |
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