JP2015193908A - タングステン膜の成膜方法および半導体装置の製造方法 - Google Patents
タングステン膜の成膜方法および半導体装置の製造方法 Download PDFInfo
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 96
- 239000010937 tungsten Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000151 deposition Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000006911 nucleation Effects 0.000 claims abstract description 27
- 238000010899 nucleation Methods 0.000 claims abstract description 27
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 9
- 229910008482 TiSiN Inorganic materials 0.000 claims description 5
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 225
- 239000010408 film Substances 0.000 description 211
- 238000010926 purge Methods 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 33
- 238000005755 formation reaction Methods 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 23
- 230000008569 process Effects 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000012159 carrier gas Substances 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
図1は本発明に係るタングステン膜の成膜方法を実施するための成膜装置の一例を示す断面図である。
次に、以上のように構成された成膜装置100を用いて行われる成膜方法の実施形態について説明する。
まず、CVD法による成膜について説明する。
図2は、CVD法による成膜の際の処理レシピを示す図である。最初に、図1の成膜装置100におけるバルブ37,37aおよび45を閉じた状態で、バルブ63および73を開き、N2ガス供給源61,71から配管64,74を介してパージガスとしてのN2ガス(パージN2)をチャンバー1内に供給して圧力を上昇させ、サセプタ2上のウエハWの温度を安定させる。
次に、ALD法により成膜について説明する。
図3は、ALD法による成膜の際の処理レシピを示す図である。最初にCVD法のときと同様、バルブ37,37aおよび45を閉じてバルブ63および73を開き、N2ガス供給源61,71から配管64,74を介してパージガスとしてのN2ガス(パージN2)をチャンバー1内に供給して圧力を上昇させ、サセプタ2上のウエハWの温度を安定させる。
タングステン原料としてWCl6等の塩化タングステンを用いた場合には、塩化タングステンガス自体がエッチング作用も有するため、温度および圧力の条件によっては塩化タングステンガスによる下地膜や成膜しているタングステン膜に対するエッチング反応が生じて成膜され難いことがある。したがって、温度・圧力条件が、そのようなエッチング反応が生じる条件以外であることが好ましい。より詳細には、温度が低い領域では成膜反応もエッチング反応も生じないため、成膜反応を生じさせるためにはある程度高いことが好ましいが、成膜反応が生じる温度では、圧力が低いとエッチング反応が生じる傾向があるため、高圧条件が好ましい。
・CVD法
キャリアN2ガス流量:20〜500sccm(mL/min)
(WCl6ガス供給量として、0.25〜15sccm(mL/min))
H2ガス流量:500〜5000sccm(mL/min)
成膜原料タンクの加温温度:130〜170℃
・ALD法
キャリアN2ガス流量:20〜500sccm(mL/min)
(WCl6ガス供給量として、0.25〜15sccm(mL/min))
WCl6ガス供給時間(1回あたり):0.5〜10sec
H2ガス流量:500〜5000sccm(mL/min)
H2ガス供給時間:(1回あたり):0.5〜10sec
成膜原料タンクの加温温度:130〜170℃
原料ガスとしてWF6を用いてタングステン膜を成膜する従来の方法の場合には、熱酸化膜や層間絶縁膜に対する密着力が悪く、かつインキュベーション時間も長くなるため、下地膜上に高ステップカバレッジで直接成膜することが困難であった。このため、従来は、還元ガスとしてSiH4またはB2H6を用いて核生成に特化した条件で、下地膜の上に核生成用の初期タングステン膜(ニュークリエーション膜)を形成してから、還元ガスとしてH2ガスを用いて主タングステン膜の成膜を行う2段階の成膜を行うことにより高ステップカバレッジの成膜を確保する必要があった。
次に、本実施形態の成膜方法の適用例について図4を参照して説明する。
最初に、下部トランジスタまたはシリコン基板の上の拡散領域からなる下部構造101(詳細は省略)の上にSiO2膜、低誘電率(Low−k)膜(SiCO、SiCOH等)等の層間絶縁膜102を有し、そこにトレンチやホール等の凹部103が形成されたウエハWを準備する(図4(a))。
次に、実験例について説明する。
(実験例1)
まず、タングステン膜の膜厚と膜の比抵抗との関係を求めた。ここでは、図1の成膜装置を用いて、シリコンウエハ表面に形成されたTiN膜の上にALD法により種々の膜厚のタングステン膜を成膜し、各膜の比抵抗を測定した。この際の条件は、キャリアN2ガス流量:500sccm(WCl6流量:10sccm)、H2ガス流量:4500sccm、WCl6供給ステップ1回の時間:1.5sec、H2ガス供給ステップ1回の時間:3sec、パージステップ1回の時間:5sec、サイクル数:200〜1000回に固定し、温度・圧力条件を、以下の条件A、条件B、条件Cの3条件とした。
[条件A] 温度:500℃、圧力:30Torr
[条件B] 温度:500℃、圧力:20Torr
[条件C] 温度:430℃、圧力:30Torr
ここでは、トップの径が180nm、アスペクト比が60のホールに下地膜としてTiN膜を形成し、その上に直接ALD法によりタングステン膜を成膜してホールを埋め込んだ。このときの条件は、図1の成膜装置を用いてウエハ温度:500℃、チャンバー内圧力:30Torr、キャリアN2ガス流量:500sccm(WCl6流量:10sccm)、H2ガス流量:4500sccm、WCl6供給ステップ1回の時間:1.5sec、H2ガス供給ステップ1回の時間:3sec、パージステップ1回の時間:5sec、サイクル数:500回とした。
ここでは、還元ガスとしてH2ガスのみを用いた場合と、H2ガスにNH3ガスを添加した場合における成膜性について評価した。図1の成膜装置を用いて、シリコンウエハ表面に形成されたTiN膜の上にALD法により種々の温度でタングステン膜を成膜した。この際の条件としては、キャリアN2ガス流量:500sccm(WCl6流量:10sccm)とし、WCl6ガス供給ステップ1回の時間:1.5sec、H2ガス供給ステップ1回の時間:3sec、パージステップ1回の時間:5sec、サイクル数:50〜300回とし、還元ガスとして、H2ガスのみを2000sccmにした場合と、H2ガス2000sccmにNH3ガス25〜1500sccm添加した場合について、ウエハ温度(サセプタ表面温度):250〜500℃の範囲でタングステン膜の成膜を行った。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、被処理基板として半導体ウエハを例にとって説明したが、半導体ウエハはシリコンであっても、GaAs、SiC、GaNなどの化合物半導体でもよく、さらに、半導体ウエハに限定されず、液晶表示装置等のFPD(フラットパネルディスプレイ)に用いるガラス基板や、セラミック基板等にも本発明を適用することができる。
2;サセプタ
5;ヒーター
10;シャワーヘッド
30;ガス供給機構
31;成膜原料タンク
42;H2ガス供給源
50;制御部
51;プロセスコントローラ
53;記憶部
61,71;N2ガス供給源
100;成膜装置
101;下部構造
102:層間絶縁膜
103;凹部
104;メタルバリア膜
105;タングステン膜
W;半導体ウエハ
Claims (13)
- 被処理基板に対し、減圧雰囲気下でタングステン原料としての塩化タングステンガスおよび還元ガスを、同時にまたは交互に供給し、被処理基板を加熱しつつ塩化タングステンガスおよび還元ガスを反応させて、被処理基板の表面に、核生成用の初期タングステン膜を成膜することなく、直接主タングステン膜を成膜することを特徴とするタングステン膜の成膜方法。
- 前記塩化タングステンがWCl6、WCl5、WCl4のいずれかであることを特徴とする請求項1に記載のタングステン膜の成膜方法。
- 還元ガスは、H2ガス、SiH4ガス、B2H6ガス、およびNH3ガスから選択された少なくとも1種であることを特徴とする請求項1または請求項2に記載のタングステン膜の成膜方法。
- 被処理基板の温度が250℃以上、処理容器内の圧力が5Torr以上であることを特徴とする請求項1から請求項3のいずれか1項に記載のタングステン膜の成膜方法。
- 前記被処理基板として表面に下地膜が形成されたものを用い、前記下地膜の表面に前記タングステン膜を成膜することを特徴とする請求項1から請求項4のいずれか1項に記載のタングステン膜の成膜方法。
- 前記下地膜は、TiN膜またはTiSiN膜であることを特徴とする請求項5に記載のタングステン膜の成膜方法。
- 前記被処理基板に凹部が形成され、前記凹部内に前記主タングステン膜を成膜して、前記凹部を埋め込むことを特徴とする請求項1から請求項6のいずれか1項に記載のタングステン膜の成膜方法。
- 表面に凹部を有する被処理基板の表面に、下地膜を成膜する工程と、
表面に前記下地膜が形成された被処理基板に対し、減圧雰囲気下でタングステン原料としての塩化タングステンガスおよび還元ガスを、同時にまたは交互に供給し、被処理基板を加熱しつつ塩化タングステンガスおよび還元ガスを反応させて、前記下地膜の表面に、核生成用の初期タングステン膜を成膜することなく、直接主タングステン膜を成膜して前記凹部を埋め込む工程と
を有することを特徴とする半導体装置の製造方法。 - 前記塩化タングステンがWCl6、WCl5、WCl4のいずれかであることを特徴とする請求項8に記載の半導体装置の製造方法。
- 還元ガスは、H2ガス、SiH4ガス、B2H6ガス、およびNH3ガスから選択された少なくとも1種であることを特徴とする請求項8または請求項9に記載の半導体装置の製造方法。
- 前記下地膜は、TiN膜またはTiSiN膜であることを特徴とする請求項8から請求項10のいずれか1項に記載の半導体装置の製造方法。
- 前記凹部を埋め込む工程は、被処理基板の温度が250℃以上、処理容器内の圧力が5Torr以上で行われることを特徴とする請求項8から請求項11のいずれか1項に記載の半導体装置の製造方法。
- コンピュータ上で動作し、成膜装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項7のいずれかのタングステン膜の成膜方法が行われるように、コンピュータに前記成膜装置を制御させることを特徴とする記憶媒体。
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