JP2015170717A - 点光源発光ダイオード - Google Patents
点光源発光ダイオード Download PDFInfo
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- JP2015170717A JP2015170717A JP2014044284A JP2014044284A JP2015170717A JP 2015170717 A JP2015170717 A JP 2015170717A JP 2014044284 A JP2014044284 A JP 2014044284A JP 2014044284 A JP2014044284 A JP 2014044284A JP 2015170717 A JP2015170717 A JP 2015170717A
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- layer
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- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】金属層26のうちの上面電極16に局所的に形成された開口12に対応する部位に局所的に設けられて活性層36で発生した光を開口12側へ反射する金属反射面50が設けられ、その金属反射面50の周囲には、金属反射面50よりも反射率が低い光反射低減面52が設けられていることから、活性層36の一部から支持基板20側へ向かう光のうちの一部は金属反射面50により反射され、他の一部の光は反射されず、光反射低減面52により吸収されるので、チップ状の点光源発光ダイオード10の端面から漏れ出るサイド光が好適に抑制される。
【選択図】図2
Description
12:開口
16:上面電極
20:支持基板
22:金属密着層
24:拡散防止バリヤ層
26:金属層
28:中間電極
30:誘電体層
32:第1コンタクト層
36:活性層
44:電流ブロック領域(電流狭窄構造)
50:金属反射面
52:光反射低減面
Claims (11)
- 支持基板上に、金属層と、第1導電型層と、活性層と、電流狭窄構造を含む第2導電型層と、前記活性層で発生した光を出射する開口が形成された上面電極とをその順で積層して成る点光源発光ダイオードであって、
前記金属層は、前記開口に対応する部位に局所的に設けられ、前記活性層で発生した光を前記開口側へ反射する金属反射面を有し、
前記金属反射面の周囲には、前記金属反射面よりも反射率が低くおよび/又は光吸収率が高い光反射低減面が設けられている
点光源発光ダイオード。 - 前記第1導電型層は、第1コンタクト層を含み、
前記第1コンタクト層の一部と接触する誘電体層が、前記金属層上に設けられている
請求項1に記載の点光源発光ダイオード。 - 前記誘電体層は、前記第1コンタクト層に対して、前記開口に対応する部位に局所的に設けられたものである
請求項2に記載の点光源発光ダイオード。 - 前記誘電体層には、前記第1コンタクト層と前記金属層との間を導通させる1又は2以上の中間電極が前記誘電体層を貫通して設けられている
請求項2または3に記載の点光源発光ダイオード。 - 前記金属層は、前記第1コンタクト層に対して、前記誘電体層と同様のパターンで前記誘電体層に隣接して局所的に或いは全面的に積層されている
請求項2乃至4のいずれか1項に記載の点光源発光ダイオード。 - 前記支持基板は、前記第1コンタクト層に低融点金属から成る金属密着層を介して熱圧着されたものであり、
該金属密着層と前記金属層との間には拡散防止バリヤ層が介在させられている
ことを特徴とする請求項2乃至5のいずれか1項に記載の点光源発光ダイオード。 - 前記金属層に設けられた金属反射面の径L2は、前記上面電極に局所的に形成された開口の中心を通る断面において、開口の径L1に対して、0.2L1≦L2≦1.8L1の大きさを有する
請求項1乃至6のいずれか1項に記載の点光源発光ダイオード。 - 前記光反射低減面の反射率RR2は、前記金属層に設けられた金属反射面の反射率RR1に対して、RR2≦0.8RR1である
請求項1乃至7のいずれか1項に記載の点光源発光ダイオード。 - 前記金属反射面は、前記開口の中心を通る断面において、前記金属反射面における前記開口の端部の垂線の交点と前記金属反射面の端部との距離をDとしたとき、前記開口の寸法L1に対して、0≦D≦0.4L1の関係を満足する
請求項1乃至8のいずれか1項に記載の点光源発光ダイオード。 - 前記金属反射面の面積A2は、前記開口の面積A1に対して、0.04A1≦A2≦3.24A1である
請求項1乃至9のいずれか1項に記載の点光源発光ダイオード。 - 前記上面電極の一の外周端部及び他の外周端部との距離L3は、前記上面電極に局所的に形成された開口の中心をとおる断面において、L2≦0.9L3の関係を満足する
請求項1乃至10のいずれか1項に記載の点光源発光ダイオード。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014044284A JP6208051B2 (ja) | 2014-03-06 | 2014-03-06 | 点光源発光ダイオード |
US14/639,037 US9595635B2 (en) | 2014-03-06 | 2015-03-04 | Point source light-emitting diode |
DE102015002839.1A DE102015002839A1 (de) | 2014-03-06 | 2015-03-05 | Punktlichtquellen-LED |
TW104107175A TWI653769B (zh) | 2014-03-06 | 2015-03-06 | 點光源發光二極體 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2014044284A JP6208051B2 (ja) | 2014-03-06 | 2014-03-06 | 点光源発光ダイオード |
Publications (2)
Publication Number | Publication Date |
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JP2015170717A true JP2015170717A (ja) | 2015-09-28 |
JP6208051B2 JP6208051B2 (ja) | 2017-10-04 |
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JP2014044284A Active JP6208051B2 (ja) | 2014-03-06 | 2014-03-06 | 点光源発光ダイオード |
Country Status (4)
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---|---|
US (1) | US9595635B2 (ja) |
JP (1) | JP6208051B2 (ja) |
DE (1) | DE102015002839A1 (ja) |
TW (1) | TWI653769B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220077910A (ko) | 2019-10-02 | 2022-06-09 | 도와 일렉트로닉스 가부시키가이샤 | 점광원형 발광 다이오드 및 그 제조 방법 |
WO2024024272A1 (ja) * | 2022-07-26 | 2024-02-01 | ソニーグループ株式会社 | 発光装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI784652B (zh) * | 2016-05-11 | 2022-11-21 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
GB201711783D0 (en) * | 2017-07-21 | 2017-09-06 | Univ Of Sussex | Nuclear Microbattery |
KR102601950B1 (ko) * | 2018-11-16 | 2023-11-14 | 삼성전자주식회사 | Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0247876A (ja) * | 1988-08-09 | 1990-02-16 | Nec Corp | 発光ダイオード |
JPH06291365A (ja) * | 1993-03-30 | 1994-10-18 | Omron Corp | 半導体発光素子及びその製造方法、光学検知装置、光学的情報処理装置、投光器並びに光ファイバモジュール |
JP2011211082A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 発光ダイオードおよびその製造方法 |
JP2011211015A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 半導体発光素子およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE501635C2 (sv) * | 1993-08-20 | 1995-04-03 | Asea Brown Boveri | Förfarande och anordning för utsändande av ljus med integrerad excitationskälla |
KR0160684B1 (ko) | 1995-03-23 | 1999-02-01 | 김광호 | 표면광 레이저 |
JPH11233815A (ja) | 1998-02-13 | 1999-08-27 | Furukawa Electric Co Ltd:The | 半導体発光ダイオード |
TWI253188B (en) | 2004-11-19 | 2006-04-11 | Epistar Corp | Method of forming light emitting diode array |
JP5279392B2 (ja) | 2008-07-31 | 2013-09-04 | キヤノン株式会社 | 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
JP5279393B2 (ja) | 2008-07-31 | 2013-09-04 | キヤノン株式会社 | 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器 |
JP2012248795A (ja) | 2011-05-31 | 2012-12-13 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP2014044284A (ja) | 2012-08-27 | 2014-03-13 | Ricoh Co Ltd | 定着装置、画像形成装置、定着管理方法及び定着管理プログラム |
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2014
- 2014-03-06 JP JP2014044284A patent/JP6208051B2/ja active Active
-
2015
- 2015-03-04 US US14/639,037 patent/US9595635B2/en active Active
- 2015-03-05 DE DE102015002839.1A patent/DE102015002839A1/de active Pending
- 2015-03-06 TW TW104107175A patent/TWI653769B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0247876A (ja) * | 1988-08-09 | 1990-02-16 | Nec Corp | 発光ダイオード |
JPH06291365A (ja) * | 1993-03-30 | 1994-10-18 | Omron Corp | 半導体発光素子及びその製造方法、光学検知装置、光学的情報処理装置、投光器並びに光ファイバモジュール |
JP2011211082A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 発光ダイオードおよびその製造方法 |
JP2011211015A (ja) * | 2010-03-30 | 2011-10-20 | Sony Corp | 半導体発光素子およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220077910A (ko) | 2019-10-02 | 2022-06-09 | 도와 일렉트로닉스 가부시키가이샤 | 점광원형 발광 다이오드 및 그 제조 방법 |
WO2024024272A1 (ja) * | 2022-07-26 | 2024-02-01 | ソニーグループ株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
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US20150255674A1 (en) | 2015-09-10 |
TW201541663A (zh) | 2015-11-01 |
US9595635B2 (en) | 2017-03-14 |
JP6208051B2 (ja) | 2017-10-04 |
TWI653769B (zh) | 2019-03-11 |
DE102015002839A1 (de) | 2015-09-10 |
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