JP2015153964A - 絶縁膜の検査方法 - Google Patents
絶縁膜の検査方法 Download PDFInfo
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- JP2015153964A JP2015153964A JP2014028114A JP2014028114A JP2015153964A JP 2015153964 A JP2015153964 A JP 2015153964A JP 2014028114 A JP2014028114 A JP 2014028114A JP 2014028114 A JP2014028114 A JP 2014028114A JP 2015153964 A JP2015153964 A JP 2015153964A
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- terminal
- insulating film
- electrode
- semiconductor substrate
- semiconductor
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000007689 inspection Methods 0.000 title claims abstract description 26
- 238000009413 insulation Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 235000012431 wafers Nutrition 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000001070 adhesive effect Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
26 絶縁膜
28 貫通電極
36 第1端子(端子)
38 第2端子(端子)
Claims (1)
- 半導体基板内に複数形成された貫通電極のそれぞれの周囲を被覆する絶縁膜の検査方法であって、
該半導体基板内の任意の貫通電極と、該貫通電極以外の貫通電極又は該半導体基板との2箇所に端子をそれぞれ当接させて、該端子間に電圧を印加するとともに該端子間に光を照射した場合と照射していない場合とで、該端子間に流れる電流をそれぞれ測定し、
該光の照射の有無により、該端子間に流れる電流値に変化がある場合に、該端子が当接した貫通電極の絶縁膜にリーク箇所が存在することを検出する絶縁膜の検査方法。
Priority Applications (1)
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JP2014028114A JP6277010B2 (ja) | 2014-02-18 | 2014-02-18 | 絶縁膜の検査方法 |
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JP2014028114A JP6277010B2 (ja) | 2014-02-18 | 2014-02-18 | 絶縁膜の検査方法 |
Publications (2)
Publication Number | Publication Date |
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JP2015153964A true JP2015153964A (ja) | 2015-08-24 |
JP6277010B2 JP6277010B2 (ja) | 2018-02-07 |
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JP2014028114A Active JP6277010B2 (ja) | 2014-02-18 | 2014-02-18 | 絶縁膜の検査方法 |
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JP (1) | JP6277010B2 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169814A (ja) * | 1993-12-15 | 1995-07-04 | Toshiba Corp | 半導体装置のスクリーニング方法 |
JP2002343855A (ja) * | 2001-05-11 | 2002-11-29 | Denso Corp | 絶縁分離型半導体装置及びその製造方法 |
JP2007189096A (ja) * | 2006-01-13 | 2007-07-26 | Denso Corp | 半導体装置及びその検査方法 |
JP2013219241A (ja) * | 2012-04-10 | 2013-10-24 | Fujitsu Ltd | 電極構造の検査方法、電極構造及び半導体装置 |
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2014
- 2014-02-18 JP JP2014028114A patent/JP6277010B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169814A (ja) * | 1993-12-15 | 1995-07-04 | Toshiba Corp | 半導体装置のスクリーニング方法 |
JP2002343855A (ja) * | 2001-05-11 | 2002-11-29 | Denso Corp | 絶縁分離型半導体装置及びその製造方法 |
JP2007189096A (ja) * | 2006-01-13 | 2007-07-26 | Denso Corp | 半導体装置及びその検査方法 |
JP2013219241A (ja) * | 2012-04-10 | 2013-10-24 | Fujitsu Ltd | 電極構造の検査方法、電極構造及び半導体装置 |
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