JP2015153870A - 半導体装置の製造方法、光電変換装置 - Google Patents

半導体装置の製造方法、光電変換装置 Download PDF

Info

Publication number
JP2015153870A
JP2015153870A JP2014025732A JP2014025732A JP2015153870A JP 2015153870 A JP2015153870 A JP 2015153870A JP 2014025732 A JP2014025732 A JP 2014025732A JP 2014025732 A JP2014025732 A JP 2014025732A JP 2015153870 A JP2015153870 A JP 2015153870A
Authority
JP
Japan
Prior art keywords
insulating layer
conductive member
insulating
etching
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014025732A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015153870A5 (enExample
Inventor
愛子 加藤
Aiko Kato
愛子 加藤
優 西村
Masaru Nishimura
優 西村
裕章 成瀬
Hiroaki Naruse
裕章 成瀬
慶大 鳥居
Keita Torii
慶大 鳥居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014025732A priority Critical patent/JP2015153870A/ja
Priority to US14/618,937 priority patent/US9559136B2/en
Publication of JP2015153870A publication Critical patent/JP2015153870A/ja
Publication of JP2015153870A5 publication Critical patent/JP2015153870A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/101—Forming openings in dielectrics
    • H01L2221/1015—Forming openings in dielectrics for dual damascene structures
    • H01L2221/1036—Dual damascene with different via-level and trench-level dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014025732A 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置 Pending JP2015153870A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014025732A JP2015153870A (ja) 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置
US14/618,937 US9559136B2 (en) 2014-02-13 2015-02-10 Semiconductor device manufacturing method, and photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014025732A JP2015153870A (ja) 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置

Publications (2)

Publication Number Publication Date
JP2015153870A true JP2015153870A (ja) 2015-08-24
JP2015153870A5 JP2015153870A5 (enExample) 2017-03-16

Family

ID=53775634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014025732A Pending JP2015153870A (ja) 2014-02-13 2014-02-13 半導体装置の製造方法、光電変換装置

Country Status (2)

Country Link
US (1) US9559136B2 (enExample)
JP (1) JP2015153870A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018147976A (ja) * 2017-03-03 2018-09-20 キヤノン株式会社 固体撮像装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3120156B1 (fr) * 2021-02-25 2023-02-10 Commissariat Energie Atomique Procédé de gravure d’une couche diélectrique tridimensionnelle

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311939A (ja) * 1999-04-27 2000-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2008091643A (ja) * 2006-10-02 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2010087190A (ja) * 2008-09-30 2010-04-15 Canon Inc 光電変換装置及び光電変換装置の製造方法
JP2011009770A (ja) * 2010-08-23 2011-01-13 Fujitsu Semiconductor Ltd 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077625A (ja) 1998-08-31 2000-03-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004134498A (ja) 2002-10-09 2004-04-30 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP5055768B2 (ja) * 2006-01-16 2012-10-24 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2008147588A (ja) 2006-12-13 2008-06-26 Nec Electronics Corp 回路パターン設計システム、回路パターン設計方法、及び回路パターン設計プログラム
JP2009004633A (ja) 2007-06-22 2009-01-08 Fujitsu Microelectronics Ltd 多層配線構造および製造方法
JP4697258B2 (ja) * 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
JP2011077468A (ja) 2009-10-02 2011-04-14 Panasonic Corp 半導体装置の製造方法および半導体装置
JP2011249583A (ja) * 2010-05-27 2011-12-08 Elpida Memory Inc 半導体装置及びその製造方法
JP2012104667A (ja) 2010-11-10 2012-05-31 Panasonic Corp 半導体装置の製造方法および半導体装置
JP5709564B2 (ja) * 2011-02-09 2015-04-30 キヤノン株式会社 半導体装置の製造方法
KR20130107628A (ko) * 2012-03-22 2013-10-02 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311939A (ja) * 1999-04-27 2000-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2008091643A (ja) * 2006-10-02 2008-04-17 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2010087190A (ja) * 2008-09-30 2010-04-15 Canon Inc 光電変換装置及び光電変換装置の製造方法
JP2011009770A (ja) * 2010-08-23 2011-01-13 Fujitsu Semiconductor Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018147976A (ja) * 2017-03-03 2018-09-20 キヤノン株式会社 固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
US20150228683A1 (en) 2015-08-13
US9559136B2 (en) 2017-01-31

Similar Documents

Publication Publication Date Title
TWI515826B (zh) 貫穿矽介層及其製造方法
KR102201092B1 (ko) 반도체 장치 제조 방법
US10504780B2 (en) Contact plug without seam hole and methods of forming the same
CN101241923A (zh) 图像传感器半导体器件
US9991303B2 (en) Image sensor device structure
JP5491077B2 (ja) 半導体装置、及び半導体装置の製造方法
TWI505431B (zh) 半導體裝置及積體電路之製作方法
JP5709564B2 (ja) 半導体装置の製造方法
US10312278B2 (en) Front side illuminated image sensor device structure and method for forming the same
CN102637712A (zh) 半导体装置及其制造方法
TW201816846A (zh) 自動對準雙重間隙壁圖案化製程
JP6083572B2 (ja) 固体撮像装置及びその製造方法
JP2012227375A (ja) 固体撮像装置及びその製造方法
US11652133B2 (en) Image sensor grid and method of manufacturing same
JP6039294B2 (ja) 半導体装置の製造方法
JP6539123B2 (ja) 固体撮像装置及びその製造方法ならびにカメラ
JP5968481B2 (ja) 半導体装置の製造方法
KR100861873B1 (ko) 반도체 소자 및 그 제조방법
JP2015153870A (ja) 半導体装置の製造方法、光電変換装置
JP2017162925A (ja) 撮像装置の製造方法
TWI509740B (zh) 雙鑲嵌製程
CN105448868B (zh) 半导体元件及其制造方法
US8836139B2 (en) CD control
JP2017011038A (ja) 固体撮像装置の製造方法
KR20100076752A (ko) 반도체 장치 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170206

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170206

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171010

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171017

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180501