JP2015141957A - プラズマ処理装置 - Google Patents
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- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
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- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H01J37/32—Gas-filled discharge tubes
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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Abstract
【解決手段】
赤外線温度センサ119と覗き窓123の間に覗き窓129を設置し、その覗き窓129を冷却し、常温(20℃-25℃)に保つことで覗き窓123から放射される電磁波を低減及び安定させ、且つその値を補正することにより、温度モニタの測定精度が向上し、安定した該誘電体窓温度の測定及び制御を行うことができるプラズマ処理装置。
【選択図】図2
Description
真空排気装置が接続され内部を減圧可能な誘電体窓と真空容器により密閉された処理室と、該処理室内へガスを供給するガス供給装置と、被処理材を載置可能でかつ温度制御器により温度制御が可能な基板電極と、該誘電体窓よりプラズマを発生するための電磁波を導入するための高周波導入手段と、該プラズマを発生するための磁場を形成する手段と、該高周波導入手段に接続された高周波電源と、該誘電体窓温度をモニターするための赤外線放射温度センサと、該誘電体窓に温風を導入する温風ヒーターと該赤外線放射温度センサにより測定した信号を元に、該誘電体窓の温度調節する機能と
該赤外線放射温度センサを、磁束密度がコイル内の1/10以下になる位置に配置するため、空洞共振器上面にμ波漏えい防止用の金属メッシュと赤外線透過用の覗き窓とその覗き窓を該赤外線放射温度センサで覗くために導波管に設けられた垂直な覗き穴と、さらにコイルから距離を離すために該導波管から該赤外線放射温度センサを支持する支持台を設けることを有するプラズマ処理装置において、
該赤外線温度センサと覗き窓の間に追加の覗き窓を設置し、その覗き窓を冷却し、常温(20℃-25℃)に保つことで覗き窓自体から放射される電磁波を低減及び安定させ、且つその値を補正することにより、温度モニタの測定精度を向上させ、安定した該誘電体窓温度の測定及び制御を行うことができるプラズマ処理装置により達成される。
また誘電体窓103の温度を計測・監視するため赤外線放射温度センサ119が、導波管107の外側に設置されている。赤外線放射温度センサ119にて検出された温度を示す信号は、温風ヒーター制御器118に通信手段を介して伝送される。温度ヒーター制御機器118は、受信した当該信号に基づいて誘電体窓103温度を検出した結果を所期の設定温度と比較し、この結果に応じて誘電体窓103が所望の温度になるように、温風ヒーター117にONまたはOFFを命じる信号を発振して温風ヒーター117の動作を調節する。ここで、、温風ヒーター117により調整する誘電体窓103の温度の範囲を室温〜100℃としている。
図2は、図1に示す実施例に係るプラズマ処理装置の上部の構成を拡大して示す縦断面図である。本図において、赤外線放射温度センサ119は、磁場発生コイル110により形成される磁束密度が当該コイル内の1/10以下(200Gauss)になる位置に配置されている。
102…シャワープレート
103…誘電体窓
104…処理室
105…ガス供給装置
106…真空排気口
107…導波管
108…空洞共振器
109…電磁波発生用電源
110…磁場発生コイル
111…ウエハ載置用電極
112…ウエハ
113…マッチング回路
114…高周波電源
115…フィルター
116…静電吸着用直流電源
117…温風ヒーター
118…温風ヒーター制御器
119…赤外線温度センサ
120…冷却水流路
121…誘電体板
122…排気ポート
123…覗き窓
124…金属メッシュ
125…覗き穴
126…覗き穴
127…支持台
128…空間
129…覗き窓
130…吹き出し口
Claims (6)
- 真空容器内部に配置された処理室と、この処理室内へガスを供給するガス供給手段と、前記処理室内に配置され処理対象の試料がその上に載置される試料台と、前記処理室の上方でこれを覆って配置され当該処理室内にプラズマを形成するため導入される電界が透過する誘電体製の板状の部材と、前記処理室の外側に配置され前記電界を前記板部材に供給する電界供給路と、前記板部材の外側で離間して配置されこの板部材から放射される赤外線を受けてその温度を検知する赤外センサと、前記板部材と前記赤外センサとの間に配置され同一の材料で構成された第一およびこの第一の窓部材から離間されて配置された第二の窓部材とを備えたプラズマ処理装置であって、
前記第二の窓部材の温度が所定の範囲にされ、前記第一および第二の窓部材を透過した前記赤外線を受けて前記赤外センサが前記板部材の温度を検出するプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記第二の窓部材の温度に応じて前記赤外センサから得られる出力を補正して前記板部材の温度を検出するプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、
前記板部材の温度が前記試料の処理の条件に応じて調節されているプラズマ処理装置。
- その温度を検出する対象物から放射される赤外線を受けて前記温度を検出する温度センサであって、
前記板部材と前記赤外センサとの間に配置され同一の材料で構成された第一およびこの第一の窓部材から離間されて配置された第二の窓部材とを備え、
前記第二の窓部材の温度が所定の範囲にされ、前記第一および第二の窓部材を透過した前記赤外線を受けて前記赤外センサが前記板部材の温度を検出する温度センサ。
- 請求項4に記載の温度センサであって、
前記第二の窓部材の温度に応じて前記赤外センサから得られる出力を補正して前記板部材の温度を検出する温度センサ。
- 請求項4または5に記載の温度センサであって、
前記板部材の温度が前記試料の処理の条件に応じて調節されている温度センサ。
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JP2014012917A JP6286215B2 (ja) | 2014-01-28 | 2014-01-28 | プラズマ処理装置 |
US14/463,756 US20150214083A1 (en) | 2014-01-28 | 2014-08-20 | Plasma processing apparatus |
US16/563,075 US11482435B2 (en) | 2014-01-28 | 2019-09-06 | Plasma processing apparatus |
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WO2024024231A1 (ja) * | 2022-07-27 | 2024-02-01 | 日新電機株式会社 | プラズマ処理装置 |
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KR102665177B1 (ko) | 2018-12-27 | 2024-05-16 | 주식회사 선익시스템 | 기판 얼라인 장치 및 이를 포함하는 증착장치 |
JP7425930B2 (ja) | 2021-01-18 | 2024-01-31 | 北京北方華創微電子装備有限公司 | 半導体プロセスチャンバ |
WO2024024231A1 (ja) * | 2022-07-27 | 2024-02-01 | 日新電機株式会社 | プラズマ処理装置 |
Also Published As
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US20150214083A1 (en) | 2015-07-30 |
JP6286215B2 (ja) | 2018-02-28 |
US11482435B2 (en) | 2022-10-25 |
US20190393058A1 (en) | 2019-12-26 |
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