WO2010073358A1 - 半導体成膜時の温度測定方法および温度測定装置 - Google Patents
半導体成膜時の温度測定方法および温度測定装置 Download PDFInfo
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- WO2010073358A1 WO2010073358A1 PCT/JP2008/073702 JP2008073702W WO2010073358A1 WO 2010073358 A1 WO2010073358 A1 WO 2010073358A1 JP 2008073702 W JP2008073702 W JP 2008073702W WO 2010073358 A1 WO2010073358 A1 WO 2010073358A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 188
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008021 deposition Effects 0.000 title abstract description 5
- 238000002834 transmittance Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 94
- 230000015572 biosynthetic process Effects 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000001514 detection method Methods 0.000 claims description 21
- 230000007423 decrease Effects 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 16
- 238000009529 body temperature measurement Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 4
- 238000000691 measurement method Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
- G01K11/125—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance using changes in reflectance
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
Definitions
- the present invention is a temperature at which a semiconductor layer is formed so that the temperature of the semiconductor layer during or after film formation can be known with high accuracy when the semiconductor layer of a light emitting diode or other semiconductor element is formed by vapor deposition.
- the present invention relates to a measuring method and a temperature measuring device.
- Semiconductors such as AlN, GaAs, GaN, InP, Si, and SiC are formed by vapor deposition.
- a vapor deposition method a chemical vapor deposition method (CVD method), a molecular beam epitaxy method (MBE method), or the like is used.
- CVD method chemical vapor deposition method
- MBE method molecular beam epitaxy method
- a substrate is set in a chamber set in a vacuum state or the like, and source molecules are supplied on the substrate in a state of source gas or the like, and a crystal layer is deposited on the surface of the substrate to form a film.
- a heater for heating the substrate and a monitor for measuring the temperature of the substrate in the chamber are provided, and the heating temperature of the heater can be controlled based on the temperature measured by the monitor.
- a pyrometer that monitors infrared rays generated by heat on the surface of the substrate is conventionally used as the monitor.
- the pyrometer is installed outside a window provided in the chamber, and infrared rays emitted from the surface of the substrate and the surface of the semiconductor layer being formed are transmitted through the glass window and detected by the pyrometer.
- temperature measurement with a pyrometer has the following problems.
- temperature measurement by the pyrometer is performed at a location away from the surface of the substrate, and is generally performed outside the glass window of the chamber. Since there is a long space between the surface of the substrate that actually generates heat and the measurement location, and there is also a glass window, the temperature measured by the pyrometer and the actual temperature of the substrate surface It is inevitable that errors occur in the meantime.
- the pyrometer will measure the temperature of the surface of the substrate through the transparent semiconductor layer. As described above, it is difficult to directly and accurately know the temperature of the semiconductor layer itself during film formation by a measuring method using a pyrometer.
- Patent Document 1 describes the use of a thermocouple monitor that measures the temperature of the back side of the substrate.
- the thermocouple monitor since the thermocouple monitor is placed on the back side of the substrate, the actual temperature of the substrate surface cannot be measured accurately. Further, since the thermocouple monitor has a large heat capacity, it cannot follow the temperature change in the chamber and cannot accurately know the substrate temperature. JP 2001-289714 A JP 2002-367907 A
- the present invention solves the above-described conventional problems, and can detect the temperature of the semiconductor layer in the middle of the film formation on the substrate surface or the temperature of the semiconductor layer after the film formation with high accuracy, and provides a high-quality semiconductor layer.
- An object of the present invention is to provide a temperature measuring method and a temperature measuring apparatus during semiconductor film formation capable of forming a film.
- the present invention relates to a measurement method for supplying a raw material molecule into the chamber while heating the substrate in the chamber to form a semiconductor layer on the substrate, and measuring the temperature of the semiconductor layer during or after the film formation.
- the relationship with ⁇ s is obtained in advance,
- the semiconductor layer is irradiated with light having the wavelength ⁇ s during or after film formation, and the temperature of the substrate is lowered to increase the light transmittance of the wavelength ⁇ s with respect to the semiconductor layer. It is determined that the layer has reached the temperature Ts, or when the temperature of the substrate is increased and the transmittance of the light with the wavelength ⁇ s to the semiconductor layer decreases, the semiconductor layer has reached the temperature Ts. It is characterized by judging.
- the present invention uses a temperature change measurement device that continuously measures the temperature of the substrate, and calculates the temperature Td measured by the temperature change measurement device at the time when the semiconductor layer has reached the temperature Ts.
- the measurement error of the temperature change measuring device can be calibrated based on the difference compared with the temperature Ts.
- the temperature of the substrate is set to a temperature higher than the temperature Ts, and the film formation of the semiconductor layer is started, and then the temperature of the substrate is lowered, and the wavelength ⁇ s for the semiconductor layer being formed is reduced. It is determined that the semiconductor layer has reached the temperature Ts at the time when the transmittance of light increases, and from the temperature Td and the temperature Ts measured by the temperature change measuring device at the time, the temperature change measuring device The measurement error can be calibrated.
- the temperature of the substrate is set to a temperature higher than the temperature Ts, and the film formation of the semiconductor layer is started. Thereafter, the temperature of the substrate is lowered, and the wavelength ⁇ s with respect to the semiconductor layer being formed is reduced. It is determined that the semiconductor layer has reached the temperature Ts at the first time when the light transmittance of the substrate increases, and then the temperature of the substrate is increased to transmit the light of the wavelength ⁇ s to the semiconductor layer. It is determined that the semiconductor layer has reached the temperature Ts at the second time when the temperature drops, and the measured value of the temperature measured twice by the temperature change measuring device at the first time and the second time It is also possible to calibrate the measurement error of the temperature change measuring device from the temperature Ts.
- the temperature of the substrate is decreased, and at the time when the transmittance of the light with the wavelength ⁇ s to the semiconductor layer after the film formation increases, It is possible to determine that the layer has reached the temperature Ts, and calibrate the measurement error of the temperature change measuring device from the temperature Td and the temperature Ts measured by the temperature change measuring device at the time.
- the present invention is provided in a film forming apparatus for supplying a raw material molecule into the chamber while heating the substrate in the chamber to form a semiconductor layer on the substrate, and during or after the film formation.
- the temperature measuring device for measuring the temperature of the semiconductor layer A light emitting device that applies light of a predetermined wavelength ⁇ s to the semiconductor layer during or after film formation, a light detection device that detects the amount of light of the wavelength ⁇ s that has passed through the semiconductor layer, and the light detection device And a control unit for controlling a heating device for heating the substrate is provided.
- the control unit irradiates the semiconductor layer during or after film formation with light of the wavelength ⁇ s, controls the heating device to lower the temperature of the substrate, and is detected by the light detection device.
- the amount of light of the wavelength ⁇ s increases, it is determined that the semiconductor layer has reached the temperature Ts, or the temperature of the substrate is increased to detect the light of the wavelength ⁇ s detected by the photodetector.
- the amount of light decreases, it is determined that the semiconductor layer has reached the temperature Ts.
- the temperature measuring device of the present invention is provided with a temperature change measuring device that continuously measures the temperature when the substrate is heated, The controller compares the temperature Td measured by the temperature change measuring device at the time when the semiconductor layer has reached the temperature Ts with the temperature Ts, and based on the difference, the temperature change measuring device.
- the measurement error can be calibrated.
- the temperature measuring method and temperature measuring apparatus of the present invention can measure the temperature of a semiconductor layer itself by detecting a change in the transmittance of light having a predetermined wavelength ⁇ s with respect to the semiconductor layer during or after film formation. it can. Since only the amount of transmission when light of a predetermined wavelength ⁇ s passes through the semiconductor layer is detected, it is not a method of measuring temperature with the magnitude of light quantity or the like.
- the temperature change measuring device such as a pyrometer is calibrated by calibrating the error of the measured value obtained from the temperature change measuring device at the time when the temperature Ts of the semiconductor layer is obtained using the light of the wavelength ⁇ s. Can be calibrated with high accuracy.
- the calibration of the measurement error of the temperature change measuring device can be performed while the semiconductor layer is being formed, or can be performed after the semiconductor layer is formed, so that it is always based on accurate temperature information. Temperature measurement error can be calibrated.
- FIG. 1 is an explanatory view showing a film forming apparatus and a temperature measuring apparatus
- FIG. 2 is an enlarged explanatory view showing a substrate inside the film forming apparatus and a semiconductor layer being formed.
- FIG. 1 schematically shows a film forming apparatus 1 for forming a semiconductor layer by chemical vapor deposition (CVD) or molecular beam epitaxy (MBE).
- CVD chemical vapor deposition
- MBE molecular beam epitaxy
- the film forming apparatus 1 has a chamber 2 and the inner space is set to a vacuum state during film formation.
- a table 3 is provided in the chamber 1, and a heater 3 a that is a heating device is built in the table 3.
- An introduction path 4 is connected to the chamber 2, and a source gas 5 containing an element (raw material molecule) for forming the semiconductor layer 7 is given to the surface of the table 3 from the introduction path 4.
- a semiconductor layer 7 is formed on the surface of the substrate 6 placed on the substrate.
- the chamber 2 is provided with a first window 8 and a second window 9.
- a transparent plate such as a glass plate is fitted in the first window 8 and the second window 9, and the inside can be observed through this transparent plate, but the internal space and the external space of the chamber 2 are shielded by the transparent plate. ing.
- a pyrometer 10 is provided outside the first window 8 as an example of a temperature change measuring device.
- the pyrometer 10 includes a light receiving unit 11 and a processing circuit unit 12 that processes a light reception output received by the light receiving unit 11.
- the light receiving unit 11 of the pyrometer 10 is installed outside the first window 8, and faces the substrate 6 directly above through a transparent plate attached to the first window 8. That is, the center of the light receiving unit 11 is located on the vertical line Lv extending perpendicularly from the center of the surface of the substrate 6, and the light receiving unit 11 is directed to the surface of the substrate 6 along the vertical line Lv.
- infrared rays generated by the heat of the surface of the table 3 are transmitted through the transparent substrate 6 and the semiconductor layer 7 being formed, and the first window 8 is formed. And is received by the light receiving unit 11.
- the light reception output received by the light receiving unit 11 is given to the processing circuit unit 12, and the surface temperature of the substrate 6, more precisely the surface temperature of the table 3, is measured from the wavelength of the received infrared light.
- a light-emitting device 21 constituting the temperature measuring device 20 of the present invention is provided outside the chamber 2.
- the light emitting device 21 emits a laser beam having a substantially single wavelength, and faces the surface of the substrate 6 from the outside of the second window 9 provided in the chamber 2.
- the laser light emitted from the light emitting device 21 is given to the surface of the substrate 6 with directivity along the path Ld.
- the path Ld is inclined at a predetermined angle ⁇ with respect to the perpendicular Lv.
- the angle ⁇ may be any angle as long as it is an angle excluding 0 degrees and 90 degrees.
- the light transmittance of the semiconductor layer 7 is reduced, and when the laser light is reflected by the surface of the semiconductor layer 7, the reflected laser light travels in a direction other than the perpendicular Lv.
- the laser beam reflected and reflected by the surface of the semiconductor layer 7 can be prevented from directly entering the light receiving unit 11.
- the substrate 6 is made of a transparent material such as a sapphire wafer.
- transparent as used herein means an optical characteristic having a total light transmittance of 80% or more, preferably a total light transmittance of 95% or more.
- the bottom surface 6a of the substrate 6 is an irregular reflection surface on which fine irregularities are formed.
- the light receiving unit 11 is used to receive infrared rays in the pyrometer 10, and is also used as a light detection device that receives laser light irregularly reflected on the bottom surface 6a.
- detection of infrared light emitted by heating the substrate 6 and detection of received light of the laser light emitted from the light emitting device 20 are alternately performed at different times to detect infrared light and reflected laser light. It is configured so that it does not interfere with the detection.
- a light detection device that receives laser light may be provided, and the light reception unit 11 and the light detection device may be arranged outside the first window 8. .
- the film forming apparatus 1, the pyrometer 10, and the light emitting device 20 are controlled by a central control unit 30.
- the central control unit 30 includes a microcomputer and a memory.
- the heating control device 31 receives a command from the central control unit 30 and controls energization to the heater 3 a to control the heating temperature of the table 3.
- the laser emission control device 32 controls the light emitting device 20 in response to an instruction from the central control unit 30.
- the detection output of the pyrometer 10 is given to the temperature detection device 33.
- the infrared detection output emitted from the table 3 is detected by the temperature detection device 33, the surface temperature of the table 3 is measured from the infrared wavelength and the like, and the temperature information is given to the central control unit 30. Further, the laser light irregularly reflected by the bottom surface 6 a of the substrate 6 is received by the light receiving unit 11, and a detection output regarding the received light amount is given to the temperature detection device 33, and the information is notified to the central control unit 30.
- the light emitting device 21 emits laser light having a predetermined wavelength ⁇ s.
- 3A and 3B show the relationship between the wavelength of the laser beam and the light transmittance and temperature of the semiconductor layer 7 during or after film formation.
- the semiconductor layer 7 formed on the surface of the substrate 6 is for forming a molecular layer of a light emitting diode or other semiconductor element, and is, for example, AlN, GaAs, GaN, InP, Si, SiC. These semiconductor layers have frequency characteristics with respect to light transmittance.
- the wavelength ⁇ x of the irradiated light becomes longer than the band edge wavelength
- the light transmittance increases, and the light wavelength ⁇ x becomes shorter than the band edge wavelength.
- the light transmittance decreases.
- the light transmittance changes rapidly at the band edge.
- the wavelength of the band edge changes according to the temperature even in the same semiconductor layer.
- the temperature of the semiconductor layer is indicated by T1 to T6, and T1 ⁇ T2 ⁇ T3 ⁇ T4 ⁇ T5 ⁇ T6.
- the wavelength of the band edge where the light transmittance changes abruptly moves toward the long wavelength band.
- FIG. 3B shows the relationship between the wavelength of the band edge and the temperature of the semiconductor layer.
- the band edge wavelength ⁇ x is 450 nm when the temperature of the semiconductor layer is T1. Therefore, when the wavelength of light applied to the semiconductor layer having a temperature of T1 is shorter than 450 nm, the light transmittance decreases, and when the light wavelength becomes longer than 450 nm, the light transmittance rapidly increases.
- the band edge wavelength is 480 nm. Therefore, if the wavelength of light applied to the semiconductor layer having a temperature of T2 is shorter than 480 nm, the light transmittance decreases, and when the light wavelength becomes longer than 480 nm, the light transmittance increases rapidly.
- FIGS. 3A and 3B show the relationship between the temperature of the semiconductor layer and the wavelength of the band edge as a typical example.
- the actual AlN, GaAs, GaN, InP, Si, SiC, or Each of the other semiconductor layers has a relationship between a unique temperature and a band edge wavelength.
- the relationship between the temperature and the band edge wavelength for each semiconductor layer is already known, but an experiment for obtaining data shown in FIGS. It is preferable that the relationship between the temperature and the band edge wavelength is actually measured.
- a graph (a) shows a change in the temperature of the semiconductor layer 7 during or immediately after the film formation.
- temperature control of the semiconductor layer 7 during film formation is extremely important.
- an appropriate temperature for forming the semiconductor layer 7 is set to 900 ° C.
- each of the semiconductor layers 7 to be formed has a relationship between a specific temperature and a wavelength of a band edge.
- the wavelength ⁇ s of the band edge when the temperature Ts of the semiconductor layer is 800 ° C. is 480 nm.
- FIG. 4 illustrates a process of forming the semiconductor layer having the unique characteristics shown in FIG. 3. In this film forming process, the wavelength of the laser light emitted from the light emitting device 21 is set to ⁇ s (480 nm). is doing.
- the temperature Ts of the semiconductor layer when the wavelength ⁇ s (480 nm) becomes a band edge is 800 ° C., and this temperature Ts is 900 ° C., which is an appropriate temperature during film formation shown in the graph (a) of FIG. Must be set to a lower value. That is, it is necessary to cause the light emitting device 21 to emit a laser beam having a wavelength ⁇ s that becomes a band edge at a temperature Ts lower than the maximum temperature during film formation.
- the laser light having the wavelength ⁇ s incident along the path Ld passes through the semiconductor layer 7 and the substrate 6 and is reflected by the irregular reflection surface of the bottom surface 6 a of the substrate 6.
- the irregularly reflected laser light passes through the substrate 6 and the semiconductor layer 7, and a part of the light component is received by the light receiving unit 11 along the perpendicular Lv.
- the amount of laser light having a wavelength ⁇ s received by the light receiving unit 11 is shown by a graph (b).
- the amount of change in the vertical axis direction is the change in light amount.
- a change in the film thickness of the semiconductor layer 7 formed on the surface of the substrate 6 is shown by a graph (c).
- the amount of change in the vertical axis direction of the graph (c) is the dimensional change of the film thickness.
- the period (i) is in the initial state, the table 3 is not heated, and the source gas 5 is not introduced.
- the central controller 30 controls the heating controller 31 to heat the table 3 with the heater 3a, the table 3 and the substrate 6 are heated during the period (ii), and the temperature of the substrate 6 is approximately 900 during the period (iii). Raise to °C.
- infrared light emitted from the surface of the heated substrate 6 is detected by the light receiving unit 11 of the pyrometer 10, and temperature information is given from the temperature detection device 33 to the central control unit 30.
- the central control unit 30 controls the heating control device 31 based on the temperature information measured by the pyrometer 10 to keep the substrate 6 at a temperature close to 900 ° C.
- the semiconductor layer 7 is not formed on the surface of the substrate 6, so that the light is emitted from the light emitting device 21 and the bottom surface 6 a of the substrate 6.
- the laser light having the wavelength ⁇ s diffusely reflected by the light is received by the light receiving unit 11, and the amount of the laser light received by the light receiving unit 11 is increased.
- the source gas 5 is supplied into the chamber 2 after the period (iii) in which the surface temperature of the substrate 6 can be predicted to be 900 ° C. is reached.
- the semiconductor layer 7 starts to be formed on the surface of the substrate 6.
- the temperature of the semiconductor layer 7 is around 900 ° C. and is at least higher than the temperature Ts shown in FIG.
- the light transmittance is low. Therefore, as indicated by (xi) in the graph (b), the light amount of the laser beam having the wavelength ⁇ s received by the light receiving unit 11 decreases.
- the heating control device 31 is controlled to stop energization of the heater 3a, and the temperature of the table 3 is lowered.
- the temperature of the substrate 6 and the semiconductor layer 7 also decreases as the temperature of the table 3 decreases.
- the wavelength of the band edge of the semiconductor layer 7 matches the wavelength ⁇ s of the laser beam applied from the light emitting device 21.
- the transmittance of the semiconductor layer 7 being deposited with respect to the light with the wavelength ⁇ s rapidly increases, and as shown in (Xii) of the graph (b), the light receiving unit 11 receives the light with the wavelength ⁇ s. The amount rises rapidly.
- the change in the light reception output of the light receiving unit 11 is given from the temperature detection device 33 to the central control unit 30.
- the central control unit 30 determines that the temperature of the semiconductor layer 7 has reached Ts (800 ° C.) at time A when it has been known that the amount of received laser light having the wavelength ⁇ s has increased rapidly.
- the heating control device 31 is controlled, the heater 3a is energized, and the heating of the table 3 is resumed.
- the temperature of the substrate 6 and the semiconductor layer 7 rises.
- the temperature of the semiconductor layer 7 exceeds the temperature Ts, and at this time, the transmittance of the light with the wavelength ⁇ s to the semiconductor layer 7 being formed rapidly decreases.
- the amount of light received at the wavelength ⁇ s at the light receiving unit 11 rapidly decreases.
- the central control unit 30 determines that the temperature of the semiconductor layer 7 has reached Ts (800 ° C.) at time B when it is known that the amount of received laser light having the wavelength ⁇ s has sharply decreased.
- a pyrometer 10 that detects infrared rays emitted from the surfaces of the substrate 6 and the semiconductor layer 7 is provided, and the pyrometer 10 continuously increases the heating temperature of the substrate 6 and the semiconductor layer 7. It is used as a temperature change measuring device for observation.
- the term “continuous” as used herein is a concept including a state in which the time for receiving the infrared light in the light receiving unit 11 and the time for detecting the amount of the laser light having the wavelength ⁇ s in the light receiving unit 11 are alternately repeated. In this case, the pyrometer 10 intermittently receives infrared rays to obtain temperature information.
- the central control unit 30 compares the temperature Td information detected by the pyrometer 10 at time A with the temperature Ts (800 ° C.), so that the temperature information detected by receiving the infrared light by the pyrometer 10 is detected.
- the error can be known, and the central control unit 30 can calibrate the detected temperature information of the pyrometer 10 sent from the temperature detection device 33 to information close to the actual temperature of the semiconductor layer 7.
- This calibration may use either time A information or time B information, but by using both time A and time B information, temperature information obtained from the pyrometer 10 can be calibrated. It can be realized with higher accuracy.
- the temperature information detected by the pyrometer 10 is used after being calibrated by the information of the temperature Ts obtained at time A and time B. Therefore, in the period (vi), by controlling the heating control device 31 based on the temperature information from the pyrometer 10, the temperature of the semiconductor layer 7 during film formation always becomes 900 ° C. or a temperature very close to 900 ° C. It is possible to control the temperature with high accuracy.
- the semiconductor layer 7 can be formed at a constant film formation rate.
- the heating temperature by the heater 3a is once lowered and then raised again, thereby performing the film formation.
- the time when the temperature of the semiconductor layer 7 reaches Ts (800 ° C.) can be known with high accuracy, and the information of the temperature Td measured by the pyrometer 10 can be calibrated with this information. Therefore, once the heating change in the period (iv) and the period (v) is performed and the information of the pyrometer 10 is calibrated, the heating change as in the period (iv) and the period (v) is not given thereafter.
- the semiconductor layer 7 can always be formed at a reproducible film formation rate.
- the temperature information of the pyrometer 10 can be calibrated by performing the heating change in the period (iv) and the period (v) only when necessary.
- the film forming operation is finished when it can be predicted that the film thickness of the semiconductor layer 7 has reached a predetermined value in the period (vi), and in the subsequent period (vii), heating by the heater 3a is performed. finish.
- the temperature of the substrate 6 and the semiconductor layer 7 after film formation decreases, but at time C when the temperature falls below Ts (800 ° C.), the light transmittance of the semiconductor layer 7 rapidly increases.
- the amount of light received at the wavelength ⁇ s at the light receiving unit 11 increases rapidly. Thereby, it can be known that the temperature of the semiconductor layer 7 has reached Ts (800 ° C.) at time C.
- the temperature information obtained by the pyrometer 10 can be calibrated to appropriate information.
- the temperature Ts 800 ° C.
- the temperature management of the substrate 6 and the semiconductor layer 7 can be accurately performed using the temperature information from the pyrometer 10.
- the laser light with the wavelength ⁇ s is irradiated obliquely from above the semiconductor layer 7.
- the laser light with the wavelength ⁇ s is applied from below the substrate 6, and the substrate 6 and the semiconductor
- the laser light transmitted through the layer 7 may be received by the light receiving unit 11.
- Explanatory drawing which shows the outline of the structure of the film-forming apparatus and the temperature measuring apparatus, An enlarged explanatory view showing a substrate inside a film forming apparatus and a semiconductor layer during film formation or after film formation, A diagram showing the relationship between the wavelength of light applied to the semiconductor layer, the light transmittance, and the temperature of the semiconductor layer; A diagram showing an example of a semiconductor layer deposition process and a temperature measurement method,
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Abstract
Description
前記半導体層に光を与えながら前記半導体層の温度を上昇させる過程で、前記半導体層を透過する光の透過率が低下するときの、前記半導体層の温度Tsと透過率が低下する光の波長λsとの関係を予め求めておき、
成膜中または成膜後の前記半導体層に前記波長λsの光を照射し、前記基板の温度を下降させて、前記半導体層に対する前記波長λsの光の透過率が上昇したときに、前記半導体層が前記温度Tsに至ったと判断し、または、前記基板の温度を上昇させて、前記半導体層に対する前記波長λsの光の透過率が低下したときに、前記半導体層が前記温度Tsに至ったと判断することを特徴とするものである。
所定の波長λsの光を成膜中または成膜後の前記半導体層に与える発光装置と、前記半導体層を透過した前記波長λsの光の光量を検出する光検出装置と、前記光検出装置からの測定値が与えられるとともに前記基板を加熱する加熱装置を制御する制御部とが設けられており、
前記半導体に前記波長λsの光を与えながら前記半導体層の温度を上昇させる過程で、前記半導体層を透過する前記光の透過率が低下するときの、前記半導体層の温度Tsと前記波長λsとの関係の情報が、前記制御部に保持されており、
前記制御部は、成膜中または成膜後の前記半導体層に前記波長λsの光を照射し且つ前記加熱装置を制御して前記基板の温度を下降させて、前記光検出装置で検出される前記波長λsの光の光量が上昇したときに、前記半導体層が前記温度Tsに至ったと判断し、または前記基板の温度を上昇させて、前記光検出装置で検出される前記波長λsの光の光量が低下したときに、前記半導体層が前記温度Tsに至ったと判断することを特徴とするものである。
前記制御部では、前記半導体層が前記温度Tsに至ったと判断した時刻に前記温度変化測定装置で測定された温度Tdを、前記温度Tsと比較し、その差に基づいて、前記温度変化測定装置の測定誤差を較正することもできる。
発光装置21からは所定の波長λsのレーザ光が発せられる。レーザ光の波長と成膜中のまたは成膜後のと半導体層7の光透過率および温度との関係は図3(A)(B)に示されている。
2 チャンバ
3 テーブル
6 基板
7 半導体層
8 第1の窓
9 第2の窓
10 パイロメータ
11 受光部
20 温度測定装置
21 発光装置
Claims (7)
- チャンバ内で基板を加熱しながら前記チャンバ内へ原料分子を供給して前記基板上に半導体層を成膜し、成膜中または成膜後に前記半導体層の温度を測定する測定方法において、
前記半導体層に光を与えながら前記半導体層の温度を上昇させる過程で、前記半導体層を透過する光の透過率が低下するときの、前記半導体層の温度Tsと透過率が低下する光の波長λsとの関係を予め求めておき、
成膜中または成膜後の前記半導体層に前記波長λsの光を照射し、前記基板の温度を下降させて、前記半導体層に対する前記波長λsの光の透過率が上昇したときに、前記半導体層が前記温度Tsに至ったと判断し、または、前記基板の温度を上昇させて、前記半導体層に対する前記波長λsの光の透過率が低下したときに、前記半導体層が前記温度Tsに至ったと判断することを特徴とする温度測定方法。 - 前記基板の温度を継続的に測定する温度変化測定装置を使用し、前記半導体層が前記温度Tsに至ったと判断した時刻に前記温度変化測定装置で測定された温度Tdを、前記温度Tsと比較し、その差に基づいて、前記温度変化測定装置の測定誤差を較正する請求項1記載の温度測定方法。
- 前記基板の温度を前記温度Tsよりも高い温度に設定して前記半導体層の成膜を開始し、その後に前記基板の温度を下降させて、成膜中の前記半導体層に対する前記波長λsの光の透過率が上昇した時刻に、前記半導体層が前記温度Tsに至ったと判断し、前記時刻に前記温度変化測定装置で測定された温度Tdと前記温度Tsとから、前記温度変化測定装置の測定誤差を較正する請求項2記載の温度測定方法。
- 前記基板の温度を前記温度Tsよりも高い温度に設定して前記半導体層の成膜を開始し、その後に前記基板の温度を下降させて、成膜中の前記半導体層に対する前記波長λsの光の透過率が上昇した第1の時刻に、前記半導体層が前記温度Tsに至ったと判断し、その後に前記基板の温度を上昇させて、前記半導体層に対する前記波長λsの光の透過率が低下した第2の時刻に、前記半導体層が前記温度Tsに至ったと判断し、前記第1時刻と前記第2の時刻に前記温度変化測定装置で2回測定された温度の測定値と前記温度Tsとから前記温度変化測定装置の測定誤差を較正する請求項2記載の温度測定方法。
- 前記半導体層の成膜が完了した後に、前記基板の温度を下降させて、成膜後の前記半導体層に対する前記波長λsの光の透過率が上昇した時刻に、前記半導体層が前記温度Tsに至ったと判断し、前記時刻に前記温度変化測定装置で測定された温度Tdと前記温度Tsとから、前記温度変化測定装置の測定誤差を較正する請求項2記載の温度測定方法。
- チャンバ内で基板を加熱しながら前記チャンバ内へ原料分子を供給して前記基板上に半導体層を成膜する成膜装置に設けられて、成膜中または成膜後の前記半導体層の温度を測定する温度測定装置において、
所定の波長λsの光を成膜中または成膜後の前記半導体層に与える発光装置と、前記半導体層を透過した前記波長λsの光の光量を検出する光検出装置と、前記光検出装置からの測定値が与えられるとともに前記基板を加熱する加熱装置を制御する制御部とが設けられており、
前記半導体に前記波長λsの光を与えながら前記半導体層の温度を上昇させる過程で、前記半導体層を透過する前記光の透過率が低下するときの、前記半導体層の温度Tsと前記波長λsとの関係の情報が、前記制御部に保持されており、
前記制御部は、成膜中または成膜後の前記半導体層に前記波長λsの光を照射し且つ前記加熱装置を制御して前記基板の温度を下降させて、前記光検出装置で検出される前記波長λsの光の光量が上昇したときに、前記半導体層が前記温度Tsに至ったと判断し、または前記基板の温度を上昇させて、前記光検出装置で検出される前記波長λsの光の光量が低下したときに、前記半導体層が前記温度Tsに至ったと判断することを特徴とする温度測定装置。 - 前記基板が加熱されたときの温度を継続的に測定する温度変化測定装置が設けられており、
前記制御部では、前記半導体層が前記温度Tsに至ったと判断した時刻に前記温度変化測定装置で測定された温度Tdを、前記温度Tsと比較し、その差に基づいて、前記温度変化測定装置の測定誤差を較正する請求項6記載の温度測定装置。
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