US20150214083A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
US20150214083A1
US20150214083A1 US14/463,756 US201414463756A US2015214083A1 US 20150214083 A1 US20150214083 A1 US 20150214083A1 US 201414463756 A US201414463756 A US 201414463756A US 2015214083 A1 US2015214083 A1 US 2015214083A1
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United States
Prior art keywords
temperature
window
disposed
planar member
viewing window
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Abandoned
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US14/463,756
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English (en)
Inventor
Masatoshi KAWAKAMI
Tsutomu Nakamura
Hideki Kihara
Hiroho Kitada
Hidenobu Tanimura
Hironori Kusumoto
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAWAKAMI, MASATOSHI, KIHARA, HIDEKI, KITADA, HIROHO, KUSUMOTO, HIRONORI, NAKAMURA, TSUTOMU, TANIMURA, HIDENOBU
Publication of US20150214083A1 publication Critical patent/US20150214083A1/en
Priority to US16/563,075 priority Critical patent/US11482435B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/042—High-temperature environment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to a plasma processing apparatus for processing a sample such as a semiconductor wafer placed in a processing chamber, in a vacuum container, by use of plasma formed in the processing chamber, and in particular, to a plasma processing apparatus for processing a sample while adjusting temperature of a member configuring a wall of the processing chamber.
  • the critical dimension deviates in the etching process due to factors such as adhesion of byproducts from materials to be processed, onto inner walls of the etching chamber, wear of inner members of the chamber due to long-period use thereof, and variation in the plasma state affecting etching performance due to change in the adhesion probability of radicals onto inner walls or the like of the chamber caused by variation in temperature or the like of inner members of the chamber.
  • window members or the like made of dielectrics arranged in waveguide paths of an electric field and a magnetic field wherein it is to be avoided to dispose any items which adversely affect propagation of electric and magnetic fields such as microwaves to generate plasma, are heated by blowing a warm wind thereto.
  • thermometer which disturbs the electric or magnetic field as above.
  • a radiation thermometer when detecting temperature by the radiation thermometer, a viewing window is disposed between the thermometer and a target of temperature detection such as a window member to face the target (or to overlook the target), the viewing window passing therethrough infrared rays emitted from the target.
  • JP-A-8-250293 describes a technique in which a dielectric material such as alumina is used to form members configuring inner wall surfaces of the vacuum chamber or to form surfaces of the wall surface members, and a window made of quartz is disposed to face the processing chamber; and temperature of the inner wall surface members is detected by an infrared thermometer via the window to control the temperature of plasma-tolerant walls with high precision, to thereby stabilize the processing which is conducted by use of plasma.
  • a dielectric material such as alumina is used to form members configuring inner wall surfaces of the vacuum chamber or to form surfaces of the wall surface members, and a window made of quartz is disposed to face the processing chamber; and temperature of the inner wall surface members is detected by an infrared thermometer via the window to control the temperature of plasma-tolerant walls with high precision, to thereby stabilize the processing which is conducted by use of plasma.
  • the conventional techniques are accompanied with a problem since consideration has not been fully given to the following point. Specifically, in the conventional techniques employing an apparatus such as the radiation thermometer to detect temperature in a contactless manner by use of electromagnetic waves in a band of a particular wavelength, consideration has not been given to influence of electromagnetic waves emitted from the viewing window itself.
  • thermometer to detect temperature by receiving electromagnetic waves through the viewing window naturally receives electromagnetic waves passing through the viewing window and electromagnetic waves emitted from the viewing window.
  • the thermometer detect the temperature based on the quantity of electromagnetic waves different from that of electromagnetic waves corresponding the actual temperature of the member as the target of temperature detection, deteriorating the detection precision This point has not been taken into consideration in the conventional techniques.
  • a plasma processing apparatus comprising:
  • FIG. 1 is a longitudinal cross-sectional view showing an outline of a configuration of a plasma processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a longitudinal cross-sectional view showing a magnified image of an upper section of the plasma processing apparatus shown in FIG. 1 ;
  • FIG. 3 is a graph showing an optical characteristic of a viewing window according to the embodiment shown in FIG. 1 ;
  • FIG. 4 is a graph showing a change in light emission intensity of infrared rays of a particular body for each wavelength
  • FIG. 5 is a graph showing the radiance detected by an infrared temperature sensor when there does not exist an additional viewing window according to the embodiment shown in FIG. 2 ;
  • FIG. 6 is a graph showing an optical characteristic of the additional viewing window according to the embodiment shown in FIG. 2 ;
  • FIG. 7 is a graph showing the radiance detected by an infrared temperature sensor 191 when the additional viewing window according to the embodiment shown in FIG. 2 is disposed;
  • FIG. 8 is a graph showing magnitude of a change in the radiance with respect to a change in temperature of viewing windows 123 and 129 according to the embodiment shown in FIG. 2 ;
  • FIG. 9 is a graph showing a method of correcting, by use of the radiance of the viewing windows, the output or the detection value of the infrared temperature sensor according to the embodiment shown in FIG. 2 .
  • FIGS. 1 and 2 show a plasma processing apparatus according to an embodiment of the present invention.
  • the apparatus is a plasma processing apparatus to conduct microwave Electron Cyclotron Resonance (ECR) etching.
  • ECR Electron Cyclotron Resonance
  • FIG. 1 shows, in a longitudinal cross-sectional view, an outline of a configuration of the plasma processing apparatus according to an embodiment of the present invention.
  • the plasma processing apparatus has a cylindrical contour or a contour to be regarded as a cylindrical contour.
  • a disk-contour dielectric window 103 made of for example, quartz is installed. By sealing the gap between the vacuum container 101 and the dielectric window 103 , the inside thereof is sealed up to an airtight state.
  • a shower plate 102 made of for example, quartz or yttria in which a plurality of through holes are arranged to feed etching gas into the processing chamber 104 in the vacuum container 10 .
  • the processing chamber 104 is configured in a state in which the ceiling surface thereof is sealed up in an airtight state between the dielectric window 103 and the sidewall of the vacuum container 101 .
  • the bottom surface of the processing chamber 104 is configured using the shower plate 102 , which faces plasma formed in the processing chamber 104 .
  • heat is imparted from the plasma via the shower plate 102 to the dielectric window 103 arranged thereover.
  • a space is formed as shown in FIG. 1 .
  • the space is communicatively connected to a gas supply 105 to flow etching gas. Etching gas fed from the gas supply 105 diffuses in the space and is then delivered via the through holes of the shower plate 102 to the processing chamber 104 .
  • a vacuum pumping apparatus is disposed to be communicatively connected to the processing chamber 104 via a vacuum pumping hole 106 disposed in the bottom surface of the processing chamber 104 in the vacuum container 101 .
  • a waveguide or an antenna 107 is disposed as a high frequency emitting apparatus above the dielectric window 103 to emit electromagnetic waves.
  • the waveguide 107 includes a cylindrical tube-shaped section extending upward above the dielectric window 103 .
  • a dielectric plate 121 made of for example, quartz is arranged to adjust the distribution of electromagnetic waves in the processing chamber 104 below the dielectric window 103 .
  • the cylindrical tube-shaped section extending in the longitudinal direction of waveguide 107 includes an upper end section which is connected to one end section of a horizontally extending tube-shaped section having a rectangular cross section, and is resultantly changed in the extending direction.
  • a power supply 109 is disposed to generate electromagnetic waves to be transmitted to the inside of the waveguide 107 .
  • the frequency of the electromagnetic waves is not particularly limited, but a 2.45 GHz microwave is employed in the present embodiment.
  • a magnetic field generating coil 110 is arranged to form a magnetic field.
  • An electric field which is generated from the electromagnetic wave generating power supply 109 and which is fed via the waveguide 107 , the dielectric window 103 , and the shower plate 102 to the processing chamber 104 reacts with a magnetic field which is generated by the magnetic field generating coil 110 when a direct current is supplied.
  • the reaction excites particles of the etching gas to form plasma in a space below the shower plate 102 in the processing chamber 104 .
  • a sample stage having an electrode therein 111 is disposed to face the bottom surface of the shower plate 102 .
  • the sample stage 111 is configured in a substantially cylindrical contour and includes an upper surface on which a wafer 112 to be processed is to be mounted. On the upper surface, a film made of dielectric, not shown, formed by spraying is disposed. In the dielectric film, at least one film-shaped electrode is arranged and is connected via a high-frequency filter 115 to a direct-current (dc) power supply 116 to supply dc power to the electrode. In the sample stage 111 , a disk-shaped substrate made of a conductor is disposed and is connected via a matching circuit 113 to a high-frequency power supply 114 .
  • dc direct-current
  • a vacuum container 101 is coupled to a sidewall of a second vacuum container 101 , not shown, in the vacuum container 101 , a vacuum transfer chamber in which transfer devices such as a robot arm are disposed in a decompressed transfer chamber.
  • a wafer 112 transferred through the transfer chamber into the processing chamber 104 is electrostatically chucked onto the sample stage 111 by electrostatic force of the dc voltage applied from the dc power supply 116 .
  • a predetermined etching gas is then supplied from the gas supply 105 to the processing chamber 104 and the internal pressure of the processing chamber 104 is adjusted to the pressure suitable for the processing.
  • the electric field and the magnetic field are formed in the processing chamber 104 , to generate plasma in a space between the sample stage 111 and the shower plate 102 in the processing chamber 104 .
  • high-frequency power is applied from the high-frequency power supply 114 connected to the sample stage 111 , to form bias potential above the wafer 112 .
  • charged particles in the plasma are drawn onto the surface of the wafer 112 , to thereby etch a target film disposed on the surface of the wafer 112 .
  • a warm-wind heater 117 is disposed as a heater for the dielectric window 103 and the shower plate 102 .
  • the heater 117 which is connected to a gas line to pass therethrough dry air at the room temperature and which heats up the dry air supplied thereto, to a desired temperature to supply the heated dry air to a cylindrical sealed space 128 , to thereby heat the dielectric window 103 and the shower plate 102 .
  • the heater ( 17 is connected to a warm-wind heater controller 118 .
  • the dry air heated by the heater 117 is fed into the waveguide via a gas supply hole disposed in the member configuring the ceiling surface of the cavity resonator 108 .
  • the dry air makes contact with the dielectric window 103 to impart heat thereto, and the dielectric window 103 is hence heated. Though heat conduction, the shower plate 102 disposed therebelow is also heated.
  • the dielectric window 103 may also be cooled when the dry air is supplied at the room temperature without heating the dry air by the heater 117 and heat is exhausted from the cooling water passing through the cooling water path 120 . As a result, it is possible to heat or to cool the dielectric window 103 by tuning the heater 117 on or off.
  • the dry air fed to the space 128 flows upward through the cylindrical section of the waveguide 107 connected to the space 128 in the upper central section of the space 128 and is exhausted to the outside of the waveguide 107 through an exhaust port 122 disposed on an upper surface of the connecting section between the rectangular cross-sectional section and the cylindrical section of the waveguide 107 .
  • the dielectric plate 121 arranged in the cylindrical section of the waveguide 107 is configured to pass dry air therethrough.
  • an infrared radiation temperature sensor 119 is installed on the outer side of the waveguide 107 .
  • the temperature sensor 119 transmits a signal indicating the temperature thus sensed, via a communicating device to the warm-wind heater controller 118 .
  • the heater controller 118 compares the resultant temperature of the dielectric window 103 with a predetermined setting temperature. According to the comparison result, in order that the dielectric window 103 is set to a desired temperature, the heater controller 118 generates a signal to turn the heater 117 on or off to thereby adjust the operation of the heater 117 .
  • the heater 117 adjusts the temperature of the dielectric window 103 in a range from the room temperature to 100° C.
  • FIG. 2 shows, in a longitudinal cross-sectional view, a magnified image of an upper section of the plasma processing apparatus according to the present embodiment shown in FIG. 1 .
  • the infrared radiation temperature sensor 119 is installed at a position where the magnetic flux density generated by the magnetic field generating coil 110 is equal to or less than one tenth (200 Gauss) of the magnetic flux density in the coil 110 .
  • a metallic mesh 124 to prevent leakage of the microwave is arranged on the upper surface of the member configuring the ceiling surface of the cavity resonator 108 and a viewing window 123 as a disk-shaped member to pass the infrared ray therethrough is disposed above the metallic mesh 124 .
  • a viewing hole 126 which is disposed above the viewing window 123 and which extends along an axis in the perpendicular direction to view the inside thereof by a sensor and a viewing hole 125 which is connected to an upper section of the viewing hole 126 and in which the cross-section along an axis in the perpendicular direction is reduced are arranged in the member configuring the cylindrical section of the waveguide 107 .
  • the infrared radiation temperature sensor 119 is installed at a position (with respect to the upper surface of the coil 110 ) where the magnetic flux density is equal to or less than one tenth of the magnetic flux density in the coil 110 , there is disposed a support stage 127 mounted on the member configuring the cylindrical section of the waveguide 107 .
  • the support stage 127 disposed above the member of the cylindrical section is tightly fixed onto the member by bolts and screws Above the upper end section of the support stage 127 , the infrared radiation temperature sensor monitor 119 is mounted to be fixed thereonto.
  • the support stage 127 is configured not to block the space for the passage of the infrared ray between the upper opening of the viewing hole 125 and the light receiving section of the infrared radiation temperature sensor monitor 119 .
  • the viewing window 123 is configured using a 3-mm thick planar member which includes calcium fluoride (barium fluoride or germanium is also available) or a material primarily including calcium fluoride (barium fluoride or germanium).
  • an additional viewing window 129 is arranged between the infrared radiation temperature sensor 119 and the viewing window 123
  • a fluid blow-off outlet 130 is disposed.
  • the fluid blow-off outlet 130 is connected via piping to a dry air tank and a pump as a fluid supply, not shown. Dry air in the tank is supplied via the piping to the fluid blow-off outlet 130 .
  • the support stage 127 is configured so that the viewing window 129 and the fluid blow-off outlet 130 are arranged.
  • the viewing window 129 is configured using the same material in the same composition as for the viewing window 123 . It is desired that the planar member configuring these windows are substantially equal also in thickness to each other.
  • FIG. 3 is a graph showing an optical characteristic of the viewing window according to the embodiment shown in FIG. 2 . Specifically, the graph demonstrates an optical characteristic of the viewing window 123 in a range of infrared wavelength from 8 ⁇ m to 14 ⁇ m when the viewing window 123 is constructed using calcium fluoride and has a thickness of 3 mm.
  • the abscissa represents the infrared wavelength and the ordinate represents transmittivity and emissivity.
  • the wavelength range from 8 ⁇ m to 10 ⁇ m is a zone (to be referred to as a transmission zone hereinbelow) in which the transmittivity is dominant
  • the wavelength range from 10 ⁇ m to 14 ⁇ m is a zone (to be referred to as an emission zone hereinbelow) in which the emissivity is dominant.
  • the wavelength range from 8 ⁇ m to 14 ⁇ m is a range of wavelengths which can be sensed by the infrared radiation temperature sensor 119 .
  • an infrared radiation temperature sensor to conduct observation in a temperature range from the room temperature to 500° C. includes a thermopile element.
  • the wavelength range from 8 ⁇ m to 14 ⁇ m corresponds to the range of wavelengths which can be sensed by the thermopile element or at least includes the wavelength range for the thermopile element.
  • the infrared ray sensed by the temperature sensor 119 including the thermopile element specifically, the radiance thereof is, for the wavelength range from 8 ⁇ m to 10 ⁇ m, the radiance from the dielectric window 121 which passes through the viewing window 123 and is, for the wavelength range from 10 ⁇ m to 14, the radiance from the dielectric window 123 .
  • FIG. 4 is a graph showing a change in the radiance of infrared rays of a particular body for each wavelength.
  • radiance (to be referred to as spectroscopic radiance hereinbelow) for each wavelength is represented in the ordinate with respect to the change in the infrared wavelength represented in the abscissa for a body at 100° C. and a body at 60° C.
  • the temperature of the viewing window 123 goes up to 60° C. or more.
  • the change in the spectroscopic radiance of the infrared ray passing through the viewing window 123 when the dielectric window 103 is at 100° C. is indicated by a solid line 402 .
  • the change in the spectroscopic radiance of the infrared ray radiated from the viewing window 123 when the dielectric window 103 is at 60° C. is indicated by a solid line 404 .
  • an integration value 401 obtained by integrating the spectroscopic radiance of the 100° C.
  • An integration value 403 obtained by integrating the spectroscopic radiance of the 60° C. body for wavelength from 10 ⁇ m to 14 ⁇ m indicates the radiance the infrared ray which is emitted from the viewing window 123 and which is detected by the temperature sensor 119 .
  • FIG. 5 is a graph showing the radiance detected by the infrared temperature sensor 119 when there does not exist the additional viewing window according to the embodiment shown in FIG. 2 .
  • the graph shows two kinds of radiance values, i.e., the value of radiance of the infrared ray which is emitted from the dielectric window 103 and which passes through the viewing window 123 and the value of radiance of the infrared ray which is emitted from the viewing window 123 and which is sensed by the temperature sensor 119 .
  • the radiance of the infrared ray which is emitted from the dielectric window 103 and which passes through the viewing window 123 is similar in the value to the radiance of the infrared ray emitted from the viewing window 123 to an extent in which they are assumed to be substantially equal thereto.
  • the magnitude and precision of the value are considerably influenced by the viewing window 123 .
  • FIG. 6 is a graph showing an optical characteristic of an additional viewing window according to the embodiment shown in FIG. 2 .
  • the spectroscopic radiance is represented along the ordinate when a particular body, a blackbody in this example, is at 100° C. and 60° C.
  • the viewing window 129 is disposed in the configuration. Since the viewing window 129 is disposed apart from the viewing window 123 thereabove the value of heat imparted from the viewing window 123 or via the support stage 127 is quite small to be regarded as zero or as substantially zero. It is hence possible to assume that there exists no heat source to heat the viewing window 123 .
  • the viewing window 129 is in contact with the dry air supplied as above in a clean room the temperature of which is appropriately adjusted in a building in which the plasma processing apparatus is installed, and is set to the room temperature, specifically, 20° C.
  • the change in the spectroscopic radiance of the infrared ray passing through the viewing window 123 when the dielectric window 103 is at 100° C. is indicated by a solid line 602 .
  • the change in the spectroscopic radiance of the infrared ray radiated from the viewing window 129 when the viewing window 129 is at 20° C. is indicated by a solid line 604 .
  • this graph as in the graph shown in FIG.
  • an integration value 601 obtained by integrating, for a wavelength range from 8 ⁇ m to 10 ⁇ m, the value of the spectroscopic radiance, indicated by the solid line 602 in this graph, of the infrared ray which passes through the viewing window 129 when the dielectric window 103 is at 100° C. indicates the radiance of the infrared ray from the dielectric window 103 which passes through the viewing window 129 and which is detected by the temperature sensor 119
  • An integration value 603 obtained by integrating, for a wavelength range from 10 ⁇ m to 14 ⁇ m, the spectroscopic radiance of the infrared ray emitted from the 20° C. viewing window 129 indicates the radiance of the infrared ray which is emitted from the viewing window 129 and which is detected by the temperature sensor 119
  • FIG. 7 shows the radiance of the infrared ray detected by the infrared temperature sensor 119 when an additional viewing window is present. Specifically, FIG. 7 is a graph showing the radiance detected by the temperature sensor 191 when the additional viewing window according to the embodiment shown in FIG. 2 is disposed.
  • the graph of FIG. 7 shows two kinds of radiance values, that is, the value of radiance of the infrared ray which is emitted from the dielectric window 103 and which passes through the viewing window 129 and the value of radiance of the infrared ray which is emitted from the viewing window 129 and which is sensed by the temperature sensor 119 .
  • the value of radiance of the infrared ray emitted from the viewing window 129 is about 60 percent of the value of radiance of the infrared ray which is emitted from the dielectric window 103 and which passes through the viewing window 129 . This indicates that the influence from the viewing window 129 is less than that from the viewing window 123 .
  • FIG. 8 is a graph showing magnitude of a change of the radiance with respect to a change of temperature of viewing windows 123 and 129 according to the embodiment shown in FIG. 2 .
  • the quantity of change in the radiance of viewing window 129 is about one tenth that of change in the radiance of the viewing window 123 . This is because when the dielectric window 103 is heated from 20° C. up to 100° C., the viewing window 123 changes in temperature from 20° C. to 60° C., but the viewing window 129 changes in a temperature range from 20° C. to 30° C. in a more stable state.
  • the viewing window 129 of the present embodiment when the viewing window 129 of the present embodiment is disposed, the influence upon the precision in the sensing operation of the temperature sensor 119 from the member of the viewing window 129 can be reduced as compared with when only the viewing window 123 is disposed. Also, when the temperature of the viewing window 129 is stabilized, the change in the radiance from the viewing window 129 is lowered. Hence, it is possible to further increase the sensing precision.
  • FIG. 9 is a graph showing a method of correcting, by use of the radiance of the viewing window, the output or the detection value of the infrared temperature sensor 119 according to the embodiment shown in FIG. 2 .
  • the radiance value in a range of the infrared wavelength from 8 ⁇ m to 14 ⁇ m for the temperature ranging from 20° C. to 100° C. of the viewing window 129 and the radiance value in a range of the infrared wavelength from 8 ⁇ m to 10 ⁇ m for the temperature ranging from 20° C. to 100° C. of the viewing window 129 specifically, the integration values obtained by integrating the spectroscopic radiance values respectively in these wavelength ranges.
  • the warm-wind heater controller 118 or in a storage such as a memory or a hard disk which are externally installed and which are communicably connected to the heater controller 118 .
  • the infrared temperature sensor 119 resultantly indicates 55° C. as the detection value of temperature.
  • the arithmetic unit such as a CPU device or the like in the heater controller 118 refers to data in the storage to obtain 32.2 W/sr/m 2 as the radiance as shown in FIG. 7 .
  • the arithmetic unit calculates the temperature corresponding to the integration value of the radiance in the wavelength range from 8 ⁇ m to 14 ⁇ m based on the beforehand stored data, to obtain the temperature as 98° C.
  • the heater controller 118 detects that the temperature of dielectric window 103 is 98° C.
  • the influence from the viewing window 129 is reduced, to detect the temperature with high precision.
  • the temperature of the inner walls of the processing chamber of the plasma processing apparatus is appropriately adjusted, to appropriately conduct processing in the plasma processing apparatus. As a result, it is possible to obtain a desired contour of wiring structure on the upper surface of the wafer.

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  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
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CN110473763A (zh) * 2019-08-12 2019-11-19 北京北方华创微电子装备有限公司 介质窗的装卸装置及工艺腔室
CN110519905A (zh) * 2018-05-21 2019-11-29 北京北方华创微电子装备有限公司 温控装置和等离子设备
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US11315767B2 (en) 2017-09-25 2022-04-26 Toyota Jidosha Kabushiki Kaisha Plasma processing apparatus
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WO2023011954A1 (de) * 2021-08-05 2023-02-09 Endress+Hauser SE+Co. KG Fenster mit ferromagnetischer markierung für eine messanordnung und messanordnung mit einem solchen fenster

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