JP2015110496A - 炭化珪素の結晶成長方法 - Google Patents
炭化珪素の結晶成長方法 Download PDFInfo
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Abstract
Description
2 耐熱性炭素材料から成る第2の坩堝
3 種結晶
4 Si−C溶液
5 坩堝回転軸
6 種結晶回転軸
7 サセプタ
8 断熱材
9 上蓋
10 高周波コイル
Claims (5)
- 溶液法による炭化珪素の結晶成長方法であって、
Si−C溶液の収容部としてSiCを主成分とする坩堝を用い、
前記Si−C溶液に、金属元素M(Mは、Al、Ga、Ge、Sn、Pb、Znの群から選択される少なくとも1種の金属元素)を含有させ、
前記坩堝を加熱して、前記Si−C溶液と接触する坩堝表面の高温領域から前記坩堝の主成分であるSiCを源とするSiおよびCを前記Si−C溶液内に溶出せしめて、前記Si−C溶液と接触する坩堝表面でのSiC多結晶の析出を抑制し、
前記坩堝の上部から、前記Si−C溶液にSiC種結晶を接触させて、該SiC種結晶上にSiC単結晶を成長させる、ことを特徴とする炭化珪素の結晶成長方法。 - 前記加熱は、前記SiCを主成分とする坩堝内のSi−C溶液の温度が上側から下側に向かって高くなる温度分布を形成するように実行される、請求項1に記載の炭化珪素の結晶成長方法。
- 前記金属元素Mの前記Si−C溶液中の総含有量を1at%〜80at%とする、請求項1または2に記載の炭化珪素の結晶成長方法。
- 前記加熱により、前記Si−C溶液を1300℃〜2300℃の温度範囲に制御する、請求項1〜3の何れか1項に記載の炭化珪素の結晶成長方法。
- 前記加熱が、前記SiCを主成分とする坩堝を耐熱性炭素材料から成る第2の坩堝内に収容した状態で行われる、請求項1〜4の何れか1項に記載の炭化珪素の結晶成長方法。
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
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JP2013253426A JP6129065B2 (ja) | 2013-12-06 | 2013-12-06 | 炭化珪素の結晶成長方法 |
EP14195245.7A EP2881498B1 (en) | 2013-12-06 | 2014-11-27 | Method for growing silicon carbide crystal |
EP14195250.7A EP2881499B1 (en) | 2013-12-06 | 2014-11-27 | Method for growing silicon carbide crystal |
PL14195250T PL2881499T3 (pl) | 2013-12-06 | 2014-11-27 | Sposób hodowli kryształu węgliku krzemu |
PL14195245T PL2881498T3 (pl) | 2013-12-06 | 2014-11-27 | Sposób hodowli kryształu węgliku krzemu |
US14/559,299 US9945047B2 (en) | 2013-12-06 | 2014-12-03 | Method for growing silicon carbide crystal |
US14/559,362 US9951439B2 (en) | 2013-12-06 | 2014-12-03 | Method for growing silicon carbide crystal |
KR1020140171881A KR102302521B1 (ko) | 2013-12-06 | 2014-12-03 | 탄화규소의 결정 성장 방법 |
KR1020140171882A KR102313257B1 (ko) | 2013-12-06 | 2014-12-03 | 탄화규소의 결정 성장 방법 |
TW103142175A TWI654345B (zh) | 2013-12-06 | 2014-12-04 | 碳化矽之結晶成長方法 |
TW103142174A TWI657170B (zh) | 2013-12-06 | 2014-12-04 | 碳化矽之結晶成長方法 |
CN201410741299.6A CN104695007B (zh) | 2013-12-06 | 2014-12-05 | 碳化硅的晶体生长方法 |
CN201410737734.8A CN104695019B (zh) | 2013-12-06 | 2014-12-05 | 碳化硅的晶体生长方法 |
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JP2013253426A JP6129065B2 (ja) | 2013-12-06 | 2013-12-06 | 炭化珪素の結晶成長方法 |
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JP2015110496A true JP2015110496A (ja) | 2015-06-18 |
JP6129065B2 JP6129065B2 (ja) | 2017-05-17 |
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Cited By (5)
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EP3316279A4 (en) * | 2015-10-26 | 2018-06-27 | LG Chem, Ltd. | Silicon-based molten composition and method for manufacturing sic single crystals using same |
JP2018521935A (ja) * | 2015-10-26 | 2018-08-09 | エルジー・ケム・リミテッド | シリコン系溶融組成物およびこれを用いたSiC単結晶の製造方法 |
EP3388560A1 (en) | 2017-04-14 | 2018-10-17 | Shin-Etsu Chemical Co., Ltd. | Method for preparing sic single crystal |
EP4130347A1 (en) | 2021-08-05 | 2023-02-08 | Shin-Etsu Chemical Co., Ltd. | Method for producing sic single crystal |
EP4148167A1 (en) | 2021-09-09 | 2023-03-15 | Shin-Etsu Chemical Co., Ltd. | Method for producing sic single crystal and method for suppressing dislocations in sic single crystal |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3316279A4 (en) * | 2015-10-26 | 2018-06-27 | LG Chem, Ltd. | Silicon-based molten composition and method for manufacturing sic single crystals using same |
JP2018521935A (ja) * | 2015-10-26 | 2018-08-09 | エルジー・ケム・リミテッド | シリコン系溶融組成物およびこれを用いたSiC単結晶の製造方法 |
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EP3285280A4 (en) * | 2015-10-26 | 2018-10-31 | LG Chem, Ltd. | Silicon-based molten composition and method for manufacturing sic single crystals using same |
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US10718065B2 (en) | 2015-10-26 | 2020-07-21 | Lg Chem, Ltd. | Silicon-based molten composition and manufacturing method of SiC single crystal using the same |
EP3388560A1 (en) | 2017-04-14 | 2018-10-17 | Shin-Etsu Chemical Co., Ltd. | Method for preparing sic single crystal |
US10612154B2 (en) | 2017-04-14 | 2020-04-07 | Shin-Etsu Chemical Co., Ltd. | Method for preparing SiC single crystal |
EP4130347A1 (en) | 2021-08-05 | 2023-02-08 | Shin-Etsu Chemical Co., Ltd. | Method for producing sic single crystal |
EP4148167A1 (en) | 2021-09-09 | 2023-03-15 | Shin-Etsu Chemical Co., Ltd. | Method for producing sic single crystal and method for suppressing dislocations in sic single crystal |
EP4276227A2 (en) | 2021-09-09 | 2023-11-15 | Shin-Etsu Chemical Co., Ltd. | Method for producing sic single crystal and method for suppressing dislocations in sic single crystal |
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