JP2015106714A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
- Publication number
- JP2015106714A JP2015106714A JP2014239716A JP2014239716A JP2015106714A JP 2015106714 A JP2015106714 A JP 2015106714A JP 2014239716 A JP2014239716 A JP 2014239716A JP 2014239716 A JP2014239716 A JP 2014239716A JP 2015106714 A JP2015106714 A JP 2015106714A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- auxiliary electrode
- solar cell
- electrode
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 135
- 239000004065 semiconductor Substances 0.000 claims abstract description 133
- 239000011347 resin Substances 0.000 claims abstract description 76
- 229920005989 resin Polymers 0.000 claims abstract description 76
- 239000000853 adhesive Substances 0.000 claims abstract description 53
- 230000001070 adhesive effect Effects 0.000 claims abstract description 53
- 239000002923 metal particle Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000004840 adhesive resin Substances 0.000 claims 2
- 229920006223 adhesive resin Polymers 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 12
- 239000002313 adhesive film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
121 エミッタ部
130 反射防止膜
172 背面電界部
200 絶縁性部材
C141 第1電極
C142 第2電極
ECA 導電性接着剤
ECA−CP 導電性金属粒子
ECA−P 導電性接着剤ペースト
IC インターコネクタ
IL 絶縁層
IL−P 絶縁層ペースト
P141 第1補助電極
P142 第2補助電極
PP141 第1パッド部
PP142 第2パッド部
Claims (20)
- 半導体基板と、
前記半導体基板の背面に互いに離隔されて形成される複数の第1電極と複数の第2電極と、
前記複数の第1電極と接続される第1補助電極と、前記複数の第2電極と接続される第2補助電極とを含む絶縁性部材と、を含み、
前記複数の第1電極と前記第1補助電極及び前記複数の第2電極と前記第2補助電極は、絶縁性の樹脂層内に含まれる導電性金属粒子を含む導電性接着剤によって互に接続され、
前記第1電極と前記第2電極との間、または前記第1補助電極と前記第2補助電極との間は、絶縁層によって絶縁され、
前記導電性接着剤に含まれる樹脂層と、前記絶縁層は、同じ樹脂材質を含む太陽電池。 - 前記導電性接着剤の樹脂層と、前記絶縁層は、エポキシ系の樹脂、アクリル系の樹脂、シリコン系の樹脂の内の少なくとも一つを含む、請求項1に記載の太陽電池。
- 1つの絶縁性部材と1つの半導体基板が接続されて一つの一体型の個別素子を形成する、請求項2に記載の太陽電池。
- 前記絶縁層は、入射される光を反射する光反射粒子を含む、請求項1に記載の太陽電池。
- 前記光反射粒子は、酸化チタン(TiO2)粒子または蛍光体(phosphor)粒子で形成される、請求項4に記載の太陽電池。
- 前記導電性金属粒子の大きさは、0.1μm〜15μmの間である、請求項1に記載の太陽電池。
- 前記導電性金属粒子は、銀(Ag)、ニッケル(Ni)、銅(Cu)、金(Au)、アルミニウム(Al)の内の少なくとも1つを含んで形成される、請求項1に記載の太陽電池。
- 前記絶縁層内には、互いに離隔する複数の導電性金属粒子が位置する、請求項1に記載の太陽電池。
- 前記第1補助電極は、
前記第1電極と接続される第1接続部と、
一端が第1接続部の終端に接続される第1パッド部を含み、
前記第2補助電極は、
前記第2電極と接続される第2接続部と、
一端が前記第2接続部の終端に接続される第2パッド部を含む、請求項1に記載の太陽電池。 - 前記第1パッド部と前記第2パッド部には、互いに隣接する太陽電池を接続するインターコネクタが接続される、請求項9に記載の太陽電池。
- 背面に複数の第1電極と複数の第2電極とを互いに離隔して形成した半導体基板と、前面に第1補助電極と第2補助電極とを互いに離隔して形成した絶縁性部材を準備する段階と、
前記半導体基板と前記絶縁性部材とを一回の熱処理工程で相互に接続して、前記複数の第1電極と前記第1補助電極とを互いに接続させ、前記複数の第2電極と前記第2補助電極とを互いに接続させる接続段階とを含み、
前記接続段階において、前記複数の第1電極及び前記複数の第2電極のそれぞれと前記第1補助電極及び前記第2補助電極のそれぞれは、複数の導電性金属粒子と樹脂層を含む導電性接着剤ペーストによって接続され、
前記複数の第1電極及び前記複数の第2電極との間、または前記第1補助電極及び前記第2補助電極との間は樹脂材質を含む絶縁層ペーストによって接続され、
前記導電性接着剤ペーストの樹脂層と前記絶縁層のペーストの絶縁性樹脂層とを、一回の熱処理工程によって同時に硬化または半硬化させる太陽電池の製造方法。 - 前記導電性接着剤ペーストに含まれる樹脂層の熱膨張率と、前記絶縁層ペーストに含まれる絶縁性樹脂層の熱膨張率とは、互いに同一である、請求項11に記載の太陽電池の製造方法。
- 前記導電性接着剤ペーストに含まれる樹脂層と、前記絶縁層ペーストに含まれる絶縁性樹脂層とは、互いに同一の材質である、請求項11に記載の太陽電池の製造方法。
- 半導体基板と、
半導体基板の背面に配置され、互いに離隔されて平行となるように形成される複数の第1電極と複数の第2電極と、
複数の第1電極に接続される第1補助電極と複数の第2電極に接続される第2補助電極とを含む絶縁性部材と、を含み、
前記複数の第1電極と前記第1補助電極とは、樹脂層と、前記樹脂層内に分散された導電性金属粒子を含む導電性接着剤を用いて互に接続され、前記複数の第2電極と前記第2補助電極とは、前記導電性接着剤を用いて互いに接続され、前記第1補助電極と前記第2補助電極とは、互いに噛み合い、
前記複数の第1電極及び前記複数の第2電極は、絶縁層を介して互いに絶縁されるか、前記第1補助電極及び前記第2補助電極は、前記絶縁層を介して互いに絶縁され、
前記導電性接着剤に含まれる樹脂層と、前記絶縁層は、同じ樹脂材質を含む太陽電池。 - 前記導電性接着剤の樹脂層と、前記絶縁層は、エポキシ系の樹脂、アクリル系の樹脂、シリコン系の樹脂の内の少なくとも一つを含む、請求項14に記載の太陽電池。
- 前記絶縁性部材と、前記半導体基板は、それぞれ単品で接続され1つの個別素子を形成する、請求項15に記載の太陽電池。
- 前記絶縁層は、入射される光を反射する光反射粒子を含む、請求項14に記載の太陽電池。
- 前記光反射粒子は、酸化チタン(TiO2)粒子または蛍光体(phosphor)粒子で形成される、請求項17に記載の太陽電池。
- 前記導電性金属粒子の大きさは、0.1μm〜15μmの間である、請求項14に記載の太陽電池。
- 前記導電性金属粒子は、銀(Ag)、ニッケル(Ni)、銅(Cu)、金(Au)、アルミニウム(Al)の内の少なくとも一つを含んで形成される、請求項14に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0147793 | 2013-11-29 | ||
KR1020130147793A KR102132940B1 (ko) | 2013-11-29 | 2013-11-29 | 태양 전지 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015106714A true JP2015106714A (ja) | 2015-06-08 |
JP6185449B2 JP6185449B2 (ja) | 2017-08-23 |
Family
ID=51867988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014239716A Active JP6185449B2 (ja) | 2013-11-29 | 2014-11-27 | 太陽電池及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10170647B2 (ja) |
EP (1) | EP2879188B1 (ja) |
JP (1) | JP6185449B2 (ja) |
KR (1) | KR102132940B1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101658733B1 (ko) | 2015-07-08 | 2016-09-21 | 엘지전자 주식회사 | 태양 전지 모듈 |
JP7185252B2 (ja) | 2018-01-31 | 2022-12-07 | 三国電子有限会社 | 接続構造体の作製方法 |
JP7046351B2 (ja) | 2018-01-31 | 2022-04-04 | 三国電子有限会社 | 接続構造体の作製方法 |
JP7160302B2 (ja) * | 2018-01-31 | 2022-10-25 | 三国電子有限会社 | 接続構造体および接続構造体の作製方法 |
CN111048499B (zh) * | 2019-12-16 | 2022-05-13 | 业成科技(成都)有限公司 | 微发光二极管显示面板及其制备方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04115407A (ja) * | 1990-09-03 | 1992-04-16 | Soken Kagaku Kk | 異方導電性接着剤組成物 |
JP2004363434A (ja) * | 2003-06-06 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 電子回路装置およびその製造方法 |
JP2008028366A (ja) * | 2006-06-23 | 2008-02-07 | Sharp Corp | 光電変換素子およびインターコネクタ付き光電変換素子 |
JP2009088145A (ja) * | 2007-09-28 | 2009-04-23 | Sharp Corp | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
JP2011114153A (ja) * | 2009-11-26 | 2011-06-09 | Mitsubishi Electric Corp | 光電変換装置およびその製造方法 |
JP2012069592A (ja) * | 2010-09-21 | 2012-04-05 | Pi R & D Co Ltd | 太陽電池の裏面反射層形成用ポリイミド樹脂組成物及びそれを用いた太陽電池の裏面反射層形成方法 |
JP2012099569A (ja) * | 2010-10-29 | 2012-05-24 | Sharp Corp | 配線シート付き太陽電池セルの製造方法、太陽電池モジュールの製造方法、配線シート付き太陽電池セルおよび太陽電池モジュール |
JP2012129461A (ja) * | 2010-12-17 | 2012-07-05 | Sharp Corp | 太陽電池および太陽電池の製造方法 |
JP2013026378A (ja) * | 2011-07-20 | 2013-02-04 | Sharp Corp | 太陽電池、太陽電池モジュール及びその製造方法 |
JP5232944B1 (ja) * | 2012-07-18 | 2013-07-10 | 東洋インキScホールディングス株式会社 | 太陽電池裏面保護シートおよび太陽電池モジュール。 |
JP2013214603A (ja) * | 2012-04-02 | 2013-10-17 | Sharp Corp | 配線シート付き太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008026386A (ja) | 2006-07-18 | 2008-02-07 | Ricoh Co Ltd | 定着ユニット及び画像形成装置 |
JPWO2009060753A1 (ja) * | 2007-11-09 | 2011-03-24 | シャープ株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
DE102008040332B4 (de) * | 2008-07-10 | 2012-05-03 | Q-Cells Ag | Rückseitenkontaktierte Solarzelle und Solarmodul mit rückseitenkontaktierten Solarzellen |
WO2011001837A1 (ja) * | 2009-07-02 | 2011-01-06 | シャープ株式会社 | 配線シート付き太陽電池セル、太陽電池モジュールおよび配線シート付き太陽電池セルの製造方法 |
JP4678698B2 (ja) * | 2009-09-15 | 2011-04-27 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
JP5445419B2 (ja) * | 2010-09-27 | 2014-03-19 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
WO2013005475A1 (ja) * | 2011-07-04 | 2013-01-10 | 三洋電機株式会社 | 太陽電池モジュール及び太陽電池 |
JP2013143426A (ja) * | 2012-01-10 | 2013-07-22 | Nitto Denko Corp | 導電性接着シートおよび太陽電池モジュール |
-
2013
- 2013-11-29 KR KR1020130147793A patent/KR102132940B1/ko active IP Right Grant
-
2014
- 2014-11-06 EP EP14003749.0A patent/EP2879188B1/en active Active
- 2014-11-27 JP JP2014239716A patent/JP6185449B2/ja active Active
- 2014-11-28 US US14/555,850 patent/US10170647B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04115407A (ja) * | 1990-09-03 | 1992-04-16 | Soken Kagaku Kk | 異方導電性接着剤組成物 |
JP2004363434A (ja) * | 2003-06-06 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 電子回路装置およびその製造方法 |
JP2008028366A (ja) * | 2006-06-23 | 2008-02-07 | Sharp Corp | 光電変換素子およびインターコネクタ付き光電変換素子 |
JP2009088145A (ja) * | 2007-09-28 | 2009-04-23 | Sharp Corp | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
JP2011114153A (ja) * | 2009-11-26 | 2011-06-09 | Mitsubishi Electric Corp | 光電変換装置およびその製造方法 |
JP2012069592A (ja) * | 2010-09-21 | 2012-04-05 | Pi R & D Co Ltd | 太陽電池の裏面反射層形成用ポリイミド樹脂組成物及びそれを用いた太陽電池の裏面反射層形成方法 |
JP2012099569A (ja) * | 2010-10-29 | 2012-05-24 | Sharp Corp | 配線シート付き太陽電池セルの製造方法、太陽電池モジュールの製造方法、配線シート付き太陽電池セルおよび太陽電池モジュール |
JP2012129461A (ja) * | 2010-12-17 | 2012-07-05 | Sharp Corp | 太陽電池および太陽電池の製造方法 |
JP2013026378A (ja) * | 2011-07-20 | 2013-02-04 | Sharp Corp | 太陽電池、太陽電池モジュール及びその製造方法 |
JP2013214603A (ja) * | 2012-04-02 | 2013-10-17 | Sharp Corp | 配線シート付き太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
JP5232944B1 (ja) * | 2012-07-18 | 2013-07-10 | 東洋インキScホールディングス株式会社 | 太陽電池裏面保護シートおよび太陽電池モジュール。 |
Also Published As
Publication number | Publication date |
---|---|
KR102132940B1 (ko) | 2020-07-10 |
US20150155405A1 (en) | 2015-06-04 |
EP2879188B1 (en) | 2020-01-01 |
EP2879188A1 (en) | 2015-06-03 |
JP6185449B2 (ja) | 2017-08-23 |
KR20150062789A (ko) | 2015-06-08 |
US10170647B2 (en) | 2019-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6139581B2 (ja) | 太陽電池モジュール | |
KR102175893B1 (ko) | 태양 전지 모듈의 제조 방법 | |
JP6082039B2 (ja) | 太陽電池モジュール | |
JP6276333B2 (ja) | 太陽電池モジュール及びその製造方法 | |
KR102271055B1 (ko) | 태양 전지 모듈 | |
JP6185449B2 (ja) | 太陽電池及びその製造方法 | |
JP6291003B2 (ja) | 太陽電池及び太陽電池モジュール | |
KR102162718B1 (ko) | 태양 전지 모듈 | |
KR102233882B1 (ko) | 태양 전지 및 태양 전지 모듈 | |
KR102162720B1 (ko) | 태양 전지 | |
KR102233873B1 (ko) | 태양 전지 모듈 | |
KR102132941B1 (ko) | 태양 전지 및 태양 전지 모듈 | |
KR102316782B1 (ko) | 태양 전지 모듈 및 그 제조 방법 | |
KR20160016303A (ko) | 태양 전지 모듈 | |
KR20150086121A (ko) | 태양 전지 모듈 | |
KR20150062792A (ko) | 태양 전지 모듈 및 태양 전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151006 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160502 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161025 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170123 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170627 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170727 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6185449 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |