JP2015091743A - 半導体磁器組成物およびptcサーミスタ - Google Patents
半導体磁器組成物およびptcサーミスタ Download PDFInfo
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Abstract
Description
(Ba1−x−y−wBixAyREw)m(Ti1−zTMz)O3 (1)
上記式(1)において、
Aは、NaまたはKより選択される少なくとも1種の元素であり、REは、Y、La、Ce、Pr、Nd、Sm、Gd、Dy及びErからなる群より選択される少なくとも1種の元素であり、TMは、V、Nb及びTaからなる群より選択される少なくとも1種の元素であり、w、x、y、z、(いずれもmol)、及びm(Baサイト/Tiサイトのmol比)は、下記式(2)〜(5)を満足し、
0.007≦x≦0.125 (2)
x<y≦2.0x (3)
0≦(w+z)≦0.01 (4)
0.94≦m≦0.999 (5)
上記焼結体は、CaをTiサイト1molに対して、元素換算で0.01mol以上、0.055mol以下の割合で含むことを特徴とする半導体磁器組成物である。
(Ba1−x−y−wBixAyREw)m(Ti1−zTMz)O3 (1)
[ただし、AはNaまたはKより選択される少なくとも1種の元素、REはY、La、Ce、Pr、Nd、Sm、Gd、Dy及びErからなる群より選択される少なくとも1種の元素、TMはV、Nb及びTaからなる群より選択される少なくとも1種の元素]で表されるものを主成分とし、更にCaを副成分として含むものである。
0.007≦x≦0.125 (2)
x<y≦2.0x (3)
0≦(w+z)≦0.01 (4)
0.94≦m≦0.999 (5)
さらに、(1)で示す組成物に対して、CaをTiサイト1molに対して元素換算で0.01mol以上、0.055mol以下の割合で含むものである。
Caの成分範囲が0.01mol未満では、半導体化が不十分となり、常温比抵抗が103Ωcmを超えてしまう。また、Caの成分範囲が0.055molを超えると、焼結密度が低下し、常温比抵抗が103Ωcmを超えてしまう。
出発原料としてBaCO3、TiO2、Bi2O3、Na2CO3、K2CO3、CaCO3、SiO2、REの酸化物(例えばY2O3)、TMの酸化物(例えば、Nb2O5)を準備し、焼結後の組成が表1〜7となるように各原料を秤量した後、ボールミルを用いてアセトン中で湿式混合した後に乾燥を行い、900℃で2時間仮焼した。
α=(lnR1−lnRC)×100/(T1−TC)
R1はT1における比抵抗、T1はTC+20℃を示す温度、TCはキュリー点、RCはTCにおける比抵抗である。
焼成時の雰囲気を窒素雰囲気中とし、さらに800℃の大気中にて熱処理を行った以外は、実施例1と同様にして半導体磁器組成物を作製し、実施例1と同様の評価を行った。本発明における実施例2の結果を表8に示す。
2 セラミック素体
3a、3b 電極
出発原料としてBaCO3、TiO2、Bi2O3、Na2CO3、K2CO3、CaCO3、SiO2、REの酸化物(例えばY2O3)、TMの酸化物(例えば、Nb2O5)を準備し、焼結後の組成が表1〜7となるように各原料を秤量した後、ボールミルを用いてアセトン中で湿式混合した後に乾燥を行い、900℃で2時間仮焼した。
α=(lnR1−lnRC)×100/(T1−TC)
R 1 はT1における比抵抗、T1はTC+20℃を示す温度、TCはキュリー点、RCはTCにおける比抵抗である。
焼成時の雰囲気を窒素雰囲気中とし、さらに800℃の大気中にて熱処理を行った以外は、実施例1と同様にして半導体磁器組成物を作製し、実施例1と同様の評価を行った。本発明における実施例2の結果を表6に示す。
Claims (4)
- 下記式(1)で示されるBaTiO3系化合物を主成分とする焼結体を備えており、
(Ba1−x−y−wBixAyREw)m(Ti1−zTMz)O3 (1)
上記式(1)において、
Aは、NaまたはKより選択される少なくとも1種の元素であり、REは、Y、La、Ce、Pr、Nd、Sm、Gd、Dy及びErからなる群より選択される少なくとも1種の元素であり、TMは、V、Nb及びTaからなる群より選択される少なくとも1種の元素であり、w、x、y、z、(いずれもmol)、及びm(Baサイト/Tiサイトのmol比)は、下記式(2)〜(5)を満足し、
0.007≦x≦0.125 (2)
x<y≦2.0x (3)
0≦(w+z)≦0.01 (4)
0.94≦m≦0.999 (5)
さらに、Tiサイト1molに対し、Caを元素換算で0.01mol以上、0.055mol以下の割合で含むことを特徴とする半導体磁器組成物。 - 前記半導体磁器組成物が、さらにTiサイト1molに対し、Siを元素換算で0.035mol以下の割合で含むことを特徴とする請求項1に記載の半導体磁器組成物。
- 前記半導体磁器組成物が、さらにTiサイト1molに対し、Mnを元素換算で0.0015mol以下の割合で含むことを特徴とする請求項1または請求項2に記載の半導体磁器組成物。
- 請求項1から3に記載の半導体磁器組成物を用いて形成されたセラミック素体と、前記セラミック素体の表面に形成された電極とを備えたPTCサーミスタ。
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JP2014170316A JP6337689B2 (ja) | 2013-10-03 | 2014-08-25 | 半導体磁器組成物およびptcサーミスタ |
US14/502,123 US9362031B2 (en) | 2013-10-03 | 2014-09-30 | Semiconductor ceramic composition and PTC thermistor |
KR1020140131970A KR101644412B1 (ko) | 2013-10-03 | 2014-09-30 | 반도체 자기 조성물 및 ptc 서미스터 |
DE102014114262.4A DE102014114262B4 (de) | 2013-10-03 | 2014-10-01 | Halbleiter-Keramik-Zusammensetzung und PTC-Thermistor |
CN201410525138.3A CN104513061A (zh) | 2013-10-03 | 2014-10-08 | 半导体陶瓷组合物以及ptc热敏电阻 |
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JP2017034140A (ja) * | 2015-08-04 | 2017-02-09 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
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DE112014001227B4 (de) * | 2013-03-11 | 2019-10-10 | Tdk Corporation | PTC-Thermistorkeramikzusammensetzung und PTC-Thermistorelement |
JP6337689B2 (ja) * | 2013-10-03 | 2018-06-06 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
JP6424728B2 (ja) * | 2014-07-03 | 2018-11-21 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
US10501374B2 (en) * | 2015-05-27 | 2019-12-10 | Tdk Electronics Ag | Dielectric composition, dielectric element, electronic component and laminated electronic component |
KR102183425B1 (ko) * | 2015-07-22 | 2020-11-27 | 삼성전기주식회사 | 적층 세라믹 전자부품 |
JP2017141117A (ja) * | 2016-02-08 | 2017-08-17 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
DE102017101946A1 (de) * | 2017-02-01 | 2018-08-02 | Epcos Ag | PTC-Heizer mit verringertem Einschaltstrom |
WO2019228925A1 (de) * | 2018-06-01 | 2019-12-05 | Tdk Electronics Ag | Heizmodul |
CN108516823B (zh) * | 2018-06-26 | 2020-09-25 | 桂林电子科技大学 | 一种具有大压电应变及压光性能的无铅铁电陶瓷材料及其制备方法 |
KR20200037688A (ko) | 2018-10-01 | 2020-04-09 | 이창모 | 반도체 자기 조성물용 전극 재료 |
CN114560694B (zh) * | 2022-03-30 | 2022-12-09 | 深圳市金科特种材料股份有限公司 | 一种陶瓷ptc热敏电阻材料的制备方法 |
KR20240036849A (ko) | 2022-09-14 | 2024-03-21 | 씨피에스 주식회사 | 반도체 자기 조성물용 전극 재료 |
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JP2010138044A (ja) * | 2008-12-12 | 2010-06-24 | Murata Mfg Co Ltd | 半導体セラミック及び正特性サーミスタ |
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JPS56169301A (en) | 1980-06-02 | 1981-12-26 | Tohoku Metal Ind Ltd | Method of producing barium titanate semiconductor porcelain |
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EP2078707A4 (en) | 2006-11-01 | 2011-05-18 | Hitachi Metals Ltd | SEMICONDUCTOR CERAMIC COMPOSITION AND MANUFACTURING METHOD THEREFOR |
KR101149634B1 (ko) | 2007-06-14 | 2012-05-25 | 가부시키가이샤 무라타 세이사쿠쇼 | 반도체 세라믹 재료 |
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DE112014001227B4 (de) * | 2013-03-11 | 2019-10-10 | Tdk Corporation | PTC-Thermistorkeramikzusammensetzung und PTC-Thermistorelement |
JP6337689B2 (ja) * | 2013-10-03 | 2018-06-06 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
JP6424728B2 (ja) * | 2014-07-03 | 2018-11-21 | Tdk株式会社 | 半導体磁器組成物およびptcサーミスタ |
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WO2006118274A1 (ja) * | 2005-04-28 | 2006-11-09 | Hitachi Metals, Ltd. | 半導体磁器組成物とその製造方法 |
WO2010067868A1 (ja) * | 2008-12-12 | 2010-06-17 | 株式会社 村田製作所 | 半導体セラミック及び正特性サーミスタ |
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DE102014114262A1 (de) | 2015-04-09 |
KR101644412B1 (ko) | 2016-08-01 |
JP6337689B2 (ja) | 2018-06-06 |
DE102014114262B4 (de) | 2019-05-23 |
CN104513061A (zh) | 2015-04-15 |
KR20150039692A (ko) | 2015-04-13 |
US9362031B2 (en) | 2016-06-07 |
US20150097650A1 (en) | 2015-04-09 |
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