JP2015076518A - 接合部及び電気配線 - Google Patents

接合部及び電気配線 Download PDF

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Publication number
JP2015076518A
JP2015076518A JP2013211899A JP2013211899A JP2015076518A JP 2015076518 A JP2015076518 A JP 2015076518A JP 2013211899 A JP2013211899 A JP 2013211899A JP 2013211899 A JP2013211899 A JP 2013211899A JP 2015076518 A JP2015076518 A JP 2015076518A
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Prior art keywords
metal composite
composite particles
region
metal
joint
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JP2013211899A
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JP5885351B2 (ja
Inventor
重信 関根
Shigenobu Sekine
重信 関根
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Napra Co Ltd
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Napra Co Ltd
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Priority to JP2013211899A priority Critical patent/JP5885351B2/ja
Priority to US14/481,122 priority patent/US9142518B2/en
Priority to EP14275203.9A priority patent/EP2860755A3/en
Priority to CN201410528116.2A priority patent/CN104553133B/zh
Publication of JP2015076518A publication Critical patent/JP2015076518A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/262—Sn as the principal constituent
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/302—Cu as the principal constituent
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Abstract

【課題】ボイド、クラック等を生じることのない高品質、高信頼度の電極接合部、及び、電気配線を提供すること。【解決手段】 ２つの導体を接合する接合部であって、Cu又はCu合金領域と、化合物領域とを有する。化合物領域は、Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含み、導体との間、及び、Cu又はCu合金領域との間で金属拡散領域を形成している。【選択図】図１

Description

本発明は、接合部及び電気配線に関する。
各種スケールの集積回路、各種半導体素子もしくはそのチップ等の電子デバイスにおいて、三次元回路配置を実現する手法として、回路基板に多数の貫通導体を設けておき、この回路基板を積層し、接合するＴＳＶ（Through-Silicon-Via)技術が提案されている。三次元回路配置にＴＳＶ技術を使用すれば、大量の機能を小さな占有面積の中に詰め込めるようになる。加えて、素子同士の重要な電気配線が劇的に短くできるために、処理の高速化を図ることができる。特許文献１には、ＴＳＶ技術に不可欠なビア・ホール構造体が開示されている。
特許文献１に開示されたビア・ホール構造体は、高融点金属、低融点金属又は金属合金、及び、架橋剤とともに、必ずバインダー及び／又は反応性モノマー又はポリマーを含有する。ビア・ホール内での硬化状態では、合金化金属網とともに、電導性接着剤の有機成分の架橋で生じたポリマー網が併存している。
特許文献１に記載されたビア・ホール構造体は、その明細書の記載によれば、ビア・ホール内での硬化状態では、合金化金属網とともに、ポリマー網が併存しているので、電気的導電性がその分だけ悪くなる。
更に、金属拡散接合に固有の問題として、カーケンダルボイドによる空洞、クラック等の発生の問題がある。カーケンダルボイドは、相互拡散の不均衡により発生した原子空孔（格子）が消滅することなく集積したことにより発生する。例えば、Sn/Cuの界面の場合、Cuの拡散に対してSnの拡散が少ないため、金属間化合物とCu界面とに空孔が集積し、カーケンダルボイドを形成する。このカーケンダルボイドが、より大きな空洞又はクラックに発展し、導体の信頼性や品質を低下させ、更には断線等を生じてしまうこともある。特許文献１には、その対策手段が開示されていない。
次に、特許文献２は、半導体装置の電極と実装基板の電極を、Cu6Sn5を含むCuSn化合物とCuボールを有する接続部とにより接続し、Cuボール同士もまた、CuSn化合物で連結する技術を開示している。しかしながら、電極間及びCuボール同士を、CuSn化合物で接続するのであるから、Sn/Cuの界面にカーケンダルボイドが発生することが懸念されよう。
ウエハの面上に、貫通導体による電気配線、平面状導体パターンによる電気配線、また、三次元システム・パッケージ（3D-SiP)などの形態をとる電子デバイスにおいて、半導体チップ間を接続する接合部を形成する場合にも同様の問題を生じる。
特許第３８６９８５９号公報 特開２００２−２６１１０５号公報
本発明の課題は、空洞、クラック等を生じることのない接合部及び電気配線を提供することである。
本発明のもう一つの課題は、溶融温度が低く、凝固後は高い融点をもつ接合部及び電気配線を提供することである。
上述した課題の少なくとも一つを解決するため、本発明は、少なくとも２つの導体を接合する接合部であって、
Cu又はCu合金領域と、
Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含む化合物領域と
を有する。前記化合物領域は、前記導体との間、及び、前記Cu又はCu合金領域との間に金属拡散領域を形成する。
上述したように、本発明に係る接合部では、Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含む化合物領域が、導体間、及び、Cu又はCu合金領域間に金属拡散領域を形成するから、金属拡散領域に含まれる金属成分の選択によって、必要であれば、溶融温度を、複数段階にコントロールし、導体間、及び、Cu又はCu合金領域間で見た相互拡散の不均衡を、緩和し得る。この結果、原子空孔（格子）の集積が回避され、カーケンダルボイドの発生が抑制され、カーケンダルボイド等のない導体間接合部が形成される。
しかも、上述した組成による化合物領域は、その金属成分の選択及び組合せによって、溶融温度が低く、凝固後は高い融点をもつ接合部を形成することができる。従って、高融点の化合物の連結による弾性的結合力で高温強度を確保し、温度サイクル時には柔軟な金属成分、例えばSnの柔かさで寿命を確保することができる。
本発明は、基板によって支持された電気配線にも適用される。この電気配線は、
Cu又はCu合金領域と、
Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含み、前記Cu又はCu合金領域との間に金属拡散領域を形成する化合物領域と、
を含む。
本発明に係る電気配線も、接合部で述べた作用効果を奏する。なお、電気配線には、貫通導体による電気配線及び平面状導体パターンによる電気配線が含まれる。
本発明に係る接合部及び電気配線は、具体的には、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子の少なくとも２種を含有することができる。この場合、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子の３種を含有していてもよいし、そのうちの２種だけを含有していてもよい。例えば、第１金属複合粒子及び第２金属複合粒子を含有するタイプであってもよいし、第１金属複合粒子及び第３金属複合粒子を含有するタイプであってもよいし、第２金属複合粒子及び第３金属複合粒子を含有するタイプであってもよい。これらの組合せは、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子における組成分の種類、組成分の相対量等を見て選択される。
上述した目的に合う第１金属複合粒子の具体としては、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むものを挙げることができる。
次に、第２金属複合粒子の具体例としては、Snと、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むものを挙げることができる。
更に、第３金属複合粒子は、具体的には、Snと、Biと、Gaと、前記Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むことができる。
第３金属複合粒子は、もう一つの選択肢として、Snと、Biと、Inと、Sbと、Ga、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含んでいてもよい。
上述したように、本発明によれば次のような効果を得ることができる。
（ａ）カーケンダルボイドの発生を抑制した接合部、及び、電気配線を提供することができる。
（ｂ）溶融温度が低く、凝固後は高い融点をもつ接合部、及び、電気配線を提供することができる。
本発明の他の目的、構成及び利点については、添付図面を参照し、更に詳しく説明する。但し、添付図面は、単なる例示に過ぎない。
本発明に係る接合部を用いた電子デバイスの一例を示す図である。 従来のSn-Cu系導電ペーストを用いて形成した配線のＳＥＭ像を示している。 本発明に係る機能性材料を用いて形成したメタライズ層のＳＥＭ像を示している。 本発明に係る電子デバイスの別の例を示す図である。 本発明に係る電子デバイスの更に別の例を示す図である。 ３００℃における高温シェア強度試験結果を示す図である。
図１を参照すると、接合部１は、電子デバイス３の基板３１に設けられた導体３２と、電子デバイス５の基板５１に設けられた導体５２との間に介在し、両導体３２−５２を接合している。この接合部１は、Cu又はCu合金領域と、Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含む化合物領域とを含む。化合物領域は、導体３２，５２との間に金属拡散領域３２１，５２１を有する。化合物領域は、また、Cu又はCu合金領域との間に、金属拡散領域を形成する。従来技術（特許文献２等）との対比では、化合物領域が、Cu及びSnの他に、Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種を含むことが特徴である。
上記接合部によれば、化合物領域と導体３２，５２との間、及び、化合物領域とCu又はCu合金領域との間の金属拡散領域において、相互拡散の不均衡が緩和される結果、原子空孔（格子）の集積が回避され、カーケンダルボイドの発生が抑制され、カーケンダルボイド等のない導体間接合部が形成される。
しかも、上述した組成による化合物領域は、その金属成分の選択及び組合せによって、溶融温度が低く、凝固後は高い融点をもつ接合部を形成することができる。例えば、一般的なCu導体を想定すると、化合物領域は、このCu導体、及び、Cu又はCu合金領域と反応して金属間化合物を形成する。この金属間化合物の融点は高く、250℃のはんだ付け温度では十分な強度を確保し得る。従って、２次リフロー時における電子デバイスの接合部は、高融点の化合物の連結による弾性的結合力で高温強度を確保し、温度サイクル時には柔軟な金属成分の柔かさで寿命を確保する機能を分担する複合材となり、高温の温度階層接続用として十分使用できるものである。
以上の点について、図２及び図３に示したＳＥＭ（Scanning Electron Microscope）像を参照して説明する。図２は、従来のＳｎ−Ｃｕ系導電ペーストを用いて形成した配線のＳＥＭ像を示し、図３は本発明に係る組成の接合部のＳＥＭ像を示している。
まず、従来のＳｎ-Ｃｕ系導電ペーストを用いて形成した配線のＳＥＭ像を示す図２を参照すると、Ｃｕ結晶と、Ｓｎ結晶との間の界面に、Ｃｕ３Ｓｎの拡散層があり、Ｃｕ３Ｓｎ層とＣu結晶との界面のほぼ全体に沿って、ボイドが生じている。
これに対して、図３を参照すると、本発明に係る接合部は、Ｃｕ結晶と化合物領域との間の界面に生じる拡散層は、Ｃｕ結晶及び化合物領域の何れに対しても、その形状に合わせた倣い形状を持ち、ボイドを生じることなく、連続している。拡散領域は、層厚７００ｎｍ以下のナノコンポジット構造を構成している。
図３において、Ｃｕ結晶領域における画像色の違いは、結晶方位の違いが現れたものである。また、図３は、接合部内の構造を示すものであるが、接合部１と、導体３２−５２との間に生じる拡散領域接合３２１，５２１においても、図３に示したような拡散接合構造が得られる。
図１〜図３に示した接合部は、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子の少なくとも２種を含有することができる。この場合、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子の３種を含有していてもよいし、そのうちの２種だけを含有していてもよい。例えば、第１金属複合粒子及び第２金属複合粒子を含有するタイプであってもよいし、第１金属複合粒子及び第３金属複合粒子を含有するタイプであってもよいし、第２金属複合粒子及び第３金属複合粒子を含有するタイプであってもよい。これらの組合せは、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子における組成分の種類、組成分の相対量等を見て選択される。
上述した目的に合う第１金属複合粒子の具体としては、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むものを挙げることができる。
次に、第２金属複合粒子の具体例としては、Snと、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むものを挙げることができる。
更に、第３金属複合粒子は、具体的には、Snと、Biと、Gaと、前記Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むことができる。
第３金属複合粒子は、もう一つの選択肢として、Snと、Biと、Inと、Sbと、Ga、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含んでいてもよい。
第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子のそれぞれは、複数種の金属成分を含有する。第１金属複合粒子〜第３金属複合粒子は、ナノコンポジット構造を有することが好ましい。ナノコンポジット構造とは、金属/合金の結晶、非結晶又はそれらの化合物がｎｍサイズで一体化され、複合化されたものをいう。第１金属複合粒子〜第３金属複合粒子は、粒形が、不揃いであっても、統一されていてもよい。また、球状、鱗片状、扁平状等、任意の形状をとることができる。
第１金属複合粒子〜第３金属複合粒子は、それぞれの融点T1（℃）、T2（℃）、T3（℃）が、T1＞T2＞T3の関係を満たすことが好ましい。これによって、相互拡散の不均衡緩和が更に促進される。その具体例は、次のとおりである。
１．第１金属複合粒子
第１金属複合粒子の具体例としては、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むものを挙げることができる。各組成分の組成比は、次のような範囲に設定することができる。
Cu：９９．９ｗｔ％以下
Sn：５０ｗｔ％以下
Si、B、Ti、AlまたはAg：０．０１ｗｔ％以下
Cu又はその合金粒子は、その表面が酸化抑制膜によって覆われていることが好ましい。酸化抑制膜としては、Cu又はその合金粒子の表面にメッキされたAgまたはSnのメッキ膜が適している、その他、１５０℃以上で昇華する樹脂の被膜であってもよい。
２．第２金属複合粒子
第２金属複合粒子の具体例としては、主成分たるSnと、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むものを挙げることができる。各組成分の組成比は、次のような範囲に設定することができる。
Sn：９８ｗｔ％以下
Cu：３０ｗｔ％以下
Si、B、Ti、AlまたはAg：０．０１ｗｔ％以下
３．第３金属複合粒子
（１）第３金属複合粒子は、一つの選択肢として、Snと、Biと、Gaと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含むことができる。この場合の各組成分の組成比は、次のような範囲に設定することができる。
Sn：４０〜８０ｗｔ％
Bi：１５〜６０ｗｔ％
Ga：０．１ｗｔ％以下
Al：１ｗｔ％以下
Si、B、TiまたはAg：０．０１ｗｔ％以下
（２）第３金属複合粒子は、もう一つの選択肢として、Snと、Biと、Inと、Sbと、Ga、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含んでいてもよい。この場合の各組成分の組成比は、次のような範囲に設定することができる。
In：Snに対して、２０ｗｔ％以下
Bi：Snに対して、２０ｗｔ％以下
Sb：Snに対して、２０ｗｔ％以下
Ga、Si、B、Ti、AlまたはAg：１ｗｔ％以下
上記具体例によれば、融点T1、T2、T3は、次のようになる。
Ｔ１＝1100℃〜500℃
Ｔ２＝400℃〜250℃
Ｔ３＝250℃以下
上述した第１金属複合粒子〜第３金属複合粒子のうち、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子の少なくとも２種を含有すればよく、３種を含有しなくともよい。例えば、Cuを主成分とする第１金属複合粒子と、Snを主成分とする第２金属複合粒子との組合せであってもよいし、第１金属複合粒子と、Snを主成分とする第３金属複合粒子との組合せであってもよい。
第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子を、流動性分散媒中に分散させたものであってもよい。流動性分散媒としては、各種有機バインダ、水性分散媒又は揮発性有機分散媒等を用いることができる。そのような分散媒としては、種々のものが知られているので、それらを選択使用すればよい。具体的には、配線用導電ペースト、充填用ペースト、導体用ペースト、封止用ペースト、または、接合ペースト等の流動性機能性材料を例示することができる。
本発明は、基板によって支持された電気配線にも適用される。この点について、図４及び図５を参照して説明する。まず、図４に図示された電気配線は、基板７１の厚み方向に設けた孔または溝内に、貫通導体７２を設けた例を示している。
基板７１は、Ｓｉ基板、ＳｉＣ基板又はＳＯＩ基板等の半導体基板によって構成することができる。無機又は有機の絶縁基板、誘電体基板、磁性基板又はそれらを複合した複合基板であってもよい。
基板７１は、その厚み方向に向かう縦孔の内部に貫通導体７２を埋め込んである。貫通導体７２は、限定するものではないが、例えば、孔径が６０μｍ以下であり、更に小径化された１０μｍ以下のものを含むこともある。
基板７１が、Si基板等で代表される半導体基板であった場合には、貫通導体７２の外周を、有機又は無機の絶縁層７３によって覆う。貫通導体７２の両端には、端子導体７４，７５がそれぞれ設けられている。更に、基板７１の厚み方向の両面には、絶縁層７６及び７７がそれぞれ設けられている。絶縁層７６，７７は、SiO2又はSiNの単層であってもよいし、SiO2層の上にSiNを積層したものであってもよい。これらの絶縁層７６，７７は、本来の電気絶縁層としての役割の他、基板反り抑制層としても役割も担う。
電気配線となる貫通導体７２、及び、端子導体７４，７５は、Cu又はCu合金領域と、Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含み、Cu又はCu合金領域との間に金属拡散領域を形成する化合物領域とを含むことができる。
絶縁層７３は、縦孔の内壁面を改質した酸化膜もしくは窒化膜であってもよいし、縦孔の内部に充填された無機もしくは有機又はそれらの機能性材料でなる絶縁層であってもよい。無機絶縁層でなる絶縁層７３は、具体的には、絶縁性微粒子、Si微粒子及び有機Si化合物を含有する絶縁性ペーストを縦孔の内部に充填し、硬化させて形成することができる。絶縁層７３を形成するには、縦孔の内部で、有機Si化合物及びSi微粒子を互いに反応させて、絶縁性微粒子の周りを埋めるSi-O結合のネットワークを形成する。有機Si化合物及びSi微粒子の反応は、好ましくは真空雰囲気中で、例えば、130℃〜150℃の温度範囲で加熱することによって進行させることができる。
次に、図５に図示された電子デバイスは、基板９１の一面に、パターン化された平面状の電気配線９２が形成されている。電気配線９２は、Cu又はCu合金領域と、Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含み、Cu又はCu合金領域との間に金属拡散領域を形成する化合物領域とを含むメタライズ配線である。電気配線９２は、必要であれば、合成樹脂膜でなる保護膜９３によって覆う。保護膜９３は、絶縁膜であってもよいし、絶縁性の低いものであってもよい。
図４及び図５に示した電気配線は、図１〜図３の接合部と同様の構成を有し、同様の作用効果を奏する他、高温シェア強度試験において、高い高温保持信頼性を有する。この点について、図６を参照して説明する。図６は、３００℃における高温シェア強度試験結果を示す図で、横軸に時間（ｈ）をとり、縦軸にシェア強度（ＭＰa）をとってある。曲線Ａは、本発明に係る電気配線（図５）のシェア強度特性を示し、曲線Ｂは特許文献１に記載された導電ペーストを用いた配線のシェア強度特性を示し、曲線Ｃは、Ａｕ-１２Ｇｅ系導電ペーストを用いた従来の配線のシェア強度特性を示している。
まず、特許文献１に記載された導電ペーストを用いて形成した配線は、曲線Ｂに示すように、シェア強度が、初期値３０（ＭＰa）と低く、４００時間経過後には１０（ＭＰa）で低下してしまう。
また、Ａｕ-１２Ｇｅ系導電ペーストを用いた従来の配線は、曲線Ｃに示すように、シェア強度特性が、初期値こそ、８０（ＭＰa）と高い値を示すものの、時間経過につれて、急激に低下し、５００時間経過後には、約２０（ＭＰa）まで低下してしまう。
これに対して、本発明に係る電気配線は、曲線Ａに示すように、シェア強度特性が、初期値５７（ＭＰa）と高い値を示し、その後、５００時間を経過しても、殆ど変わらないシェア強度特性を保持している。
これは、本発明に係る電気配線が、ボイド、クラック、断線のほとんどない連続する層となり、充填度、緻密性が上がり、導電性が高く、機械的・物理的強度の高い電気配線となることを示している。図６の実験データは、同じ材料を用いた図１の接合部及び図４の電気配線についても妥当する。
本発明の適用される電子デバイスは、代表的には、インターポーザある。そのほか、システムLSI、メモリLSI、イメージセンサ又はMEMS等であってもよいし、アナログやデジタルの回路、CPUのようなロジック回路などを含む電子デバイスであってもよいし、アナログ高周波回路と、低周波で低消費電力の回路といった異種の回路を、別々のプロセスによって作り、それらを積層した電子デバイスであってもよい。更に、センサーモジュル、光電気モジュール、ユニポーラトランジスタ、ＭＯＳ ＦＥＴ、ＣＭＯＳ ＦＥＴ、メモリーセル、もしくは、それらの集積回路部品（ＩＣ）、又は各種スケールのＬＳＩ等、凡そ、電子回路を機能要素とする電子デバイスのほとんどのものが含まれ得る。
以上、好ましい実施例を参照して本発明を詳細に説明したが、本発明はこれらに限定されるものではなく、当業者であれば、その基本的技術思想および教示に基づき、種々の変形例を想到できることは自明である。
１ 接合部
３，５ 電子デバイス
３１、５１ 基板
３２１，５２１ 拡散領域
７１ 基板
７２ 電気配線
７３ 絶縁層
９１ 基板
９２ 電気配線

Claims (3)

  1. 少なくとも２つの導体を接合する接合部であって、
    Cu又はCu合金領域と、
    Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含む化合物領域と
    を有し、
    前記化合物領域は、前記導体との間、及び、前記Ｃｕ又はCu合金領域との間で金属拡散領域を形成している、
    接合部。
  2. 請求項１に記載された接合部であって、
    前記化合物領域は、第１金属複合粒子、第２金属複合粒子及び第３金属複合粒子のうちの少なくとも２種を含有し、
    前記第１金属複合粒子は、Cuと、Si、B、Ti、Al、Agの群から選択された少なくとも一種とを含んでおり、
    前記第２金属複合粒子は、Snと、Cuと、Si、B、Ti、AlまたはAgの群から選択された少なくとも一種とを含んでおり、
    前記第３金属複合粒子は、
    （ａ）Snと、Biと、Gaと、Si、B、Ti、Al、Agの群から選択された少なくとも一種とを含むか、または、
    （ｂ）Snと、Biと、Inと、Sbと、Ga、Si、B、Ti、Al、Agの群から選択された少なくとも一種とを含む、
    接合部。
  3. 基板によって支持された電気配線であって、
    Cu又はCu合金領域と、
    Si、B、Ti、Al、Ag、Bi、In、Sb、Gaの群から選択された少なくとも一種、Cu及びSnを含み、前記Cu又はCu合金領域との間に金属拡散領域を形成する化合物領域と、
    を含む電気配線。
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