JP2015074712A - フィルム用樹脂組成物、絶縁フィルムおよび半導体装置 - Google Patents
フィルム用樹脂組成物、絶縁フィルムおよび半導体装置 Download PDFInfo
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Abstract
【解決手段】 (A)特定のビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、(B)熱可塑性エラストマーと、(C)ナフタレン型エポキシ樹脂と、(D)硬化剤と、(E)絶縁フィラーとを含み、(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(C)成分が0.5〜30.0質量部であることを特徴とする、フィルム用樹脂組成物である。
【選択図】 なし
Description
〔1〕(A)少なくとも以下の一般式(1):
R1、R2、R3、R4、R5、R6、R7は同一又は異なってもよく、水素原子、ハロゲン原子、アルキル基、ハロゲン化アルキル基又はフェニル基であり、
−(O−X−O)−は構造式(2)で示され、ここで、R8、R9、R10、R14、R15は、同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R11、R12、R13は、同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
−(Y−O)−は構造式(3)で示される1種類の構造、又は構造式(3)で示される2種類以上の構造がランダムに配列したものであり、ここで、R16、R17は同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R18、R19は同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
Zは炭素数1以上の有機基であり、場合により酸素原子、窒素原子、硫黄原子、ハロゲン原子を含むこともあり、
a、bは少なくともいずれか一方が0でない、0〜300の整数を示し、
c、dは0又は1の整数を示す)で示されるビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、
(B)熱可塑性エラストマーと、
(C)ナフタレン型エポキシ樹脂と、
(D)硬化剤と、
(E)絶縁フィラーと
を含み、
(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(C)成分が0.5〜30.0質量部であることを特徴とする、フィルム用樹脂組成物。
〔2〕(E)成分が、MgO、Al2O3、AlN、BN、ダイヤモンドフィラー、ZnO、およびSiCからなる群より選択される少なくとも1種である、上記〔1〕記載のフィルム用樹脂組成物。
〔3〕硬化後のフィルム用樹脂組成物の体積抵抗率が、1×1010Ω・cm以上である、上記〔1〕または〔2〕記載のフィルム用樹脂組成物。
〔4〕(E)成分が、フィルム用樹脂組成物100質量部に対して、40〜95質量部である、上記〔1〕〜〔3〕のいずれか記載のフィルム用樹脂組成物。
〔5〕上記〔1〕〜〔4〕のいずれか記載のフィルム用樹脂組成物により形成される、絶縁フィルム。
〔6〕上記〔5〕記載の絶縁フィルムの硬化物を含む、半導体装置。
本発明のフィルム用樹脂組成物は、
(A)少なくとも以下の一般式(1):
R1、R2、R3、R4、R5、R6、R7は同一又は異なってもよく、水素原子、ハロゲン原子、アルキル基、ハロゲン化アルキル基又はフェニル基であり、
−(O−X−O)−は構造式(2)で示され、ここで、R8、R9、R10、R14、R15は、同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R11、R12、R13は、同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
−(Y−O)−は構造式(3)で示される1種類の構造、又は構造式(3)で示される2種類以上の構造がランダムに配列したものであり、ここで、R16、R17は同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R18、R19は同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
Zは炭素数1以上の有機基であり、場合により酸素原子、窒素原子、硫黄原子、ハロゲン原子を含むこともあり、
a、bは少なくともいずれか一方が0でない、0〜300の整数を示し、
c、dは0又は1の整数を示す)で示されるビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、
(B)熱可塑性エラストマーと、
(C)ナフタレン型エポキシ樹脂と、
(D)硬化剤と、
(E)絶縁フィラーと
を含み、
(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(C)成分が0.5〜30.0質量部であることを特徴とする。
1,3−ジグリシジルエーテルナフタレン、1,4−ジグリシジルエーテルナフタレン、1,5−ジグリシジルエーテルナフタレン、1,6−ジグリシジルエーテルナフタレン、2,6−ジグリシジルエーテルナフタレン、2,7−ジグリシジルエーテルナフタレン、
1,3−ジグリシジルエステルナフタレン、1,4−ジグリシジルエステルナフタレン、1,5−ジグリシジルエステルナフタレン、1,6−ジグリシジルエステルナフタレン、2,6−ジグリシジルエステルナフタレン、2,7−ジグリシジルエステルナフタレン、
1,3−テトラグリシジルアミンナフタレン、1,4−テトラグリシジルアミンナフタレン、1,5−テトラグリシジルアミンナフタレン、1,6−テトラグリシジルアミンナフタレン、1,8−テトラグリシジルアミンナフタレン、2,6−テトラグリシジルアミンナフタレン、2,7−テトラグリシジルアミンナフタレンなどのナフタレン型エポキシ樹脂が挙げられる。(C)成分は、上記したナフタレン型エポキシ樹脂を含むものであればよく、1種単独で用いてもよいし、2種以上を併用してもよい。特に、液状の2官能ナフタレン型エポキシ樹脂が低粘度である点から好ましい。ナフタレン型エポキシ樹脂を用いることで、接着強度(ピール強度)が向上し、フィラーの充填量を増加することができる。この結果、接着フィルムの高熱伝導化が可能となる。また、ナフタレン型エポキシ樹脂は、耐熱性にも優れており、この点からも高熱伝導用途に好適である。
本発明の絶縁フィルムは、上述のフィルム用樹脂組成物により形成される。
本発明の半導体装置は、上述の絶縁フィルムの硬化物を含む。半導体装置としては、モジュールや電子部品などの発熱体と、基板とを、絶縁フィルムの硬化物で接着したものや、基板と放熱板とを絶縁フィルムの硬化物で接着したものが挙げられる。
表1に示す配合で、(A)成分、(B)成分、(C)成分、および適量のトルエンを計量配合した後、それらを80℃に加温された反応釜に投入し、回転数150rpmで回転させながら、常圧混合を3時間行い、クリヤーを作製した。作製したクリヤーに、(D)成分、(E)成分、その他の成分を加え、プラネタリーミキサーにより分散し、フィルム用樹脂組成物を作製した。このようにして得られたフィルム用樹脂組成物を、支持体である離型処理をほどこしたPETフィルムの片面に塗布し、100℃で乾燥させることにより、支持体付の絶縁フィルムを得た。なお、比較例2は、フィルムに成形することができず、下記の熱伝導率、ピール強度の評価もできなかった。また、実施例1〜6の硬化後のフィルム用樹脂組成物の体積抵抗率は、すべて1×1010Ω・cm以上であった。具体的には、実施例1は1.5×1014Ω・cm、実施例2は2.1×1014Ω・cmであった。硬化後のフィルム用樹脂組成物の体積抵抗率は、プレス機で熱硬化(200℃、60min、0.1MPa)させた後のフィルム用樹脂組成物を試験片とし、東亜電波工業製極超絶縁計(型番:SM−8220)を用いて、試験片の体積抵抗率を測定した。
未硬化の絶縁フィルムを、プレス機で熱硬化させた(200℃、60min、0.1MPa)。硬化させた絶縁フィルムの熱伝導率を、NETZSCH社製熱伝導率計(Xeフラッシュアナライザー、型番:LFA447Nanoflash)を用いて測定した。
絶縁フィルムの両面に、粗化面を内側にして銅箔を貼りあわせ、プレス機で熱圧着させた(200℃、60min、0.1MPa)。この試験片を10mm幅にカットし、オートグラフで引きはがし、ピール強度を測定した。測定結果について、各N=5の平均値を計算した。
Claims (6)
- (A)少なくとも以下の一般式(1):
R1、R2、R3、R4、R5、R6、R7は同一又は異なってもよく、水素原子、ハロゲン原子、アルキル基、ハロゲン化アルキル基又はフェニル基であり、
−(O−X−O)−は構造式(2)で示され、ここで、R8、R9、R10、R14、R15は、同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R11、R12、R13は、同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
−(Y−O)−は構造式(3)で示される1種類の構造、又は構造式(3)で示される2種類以上の構造がランダムに配列したものであり、ここで、R16、R17は同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R18、R19は同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
Zは炭素数1以上の有機基であり、場合により酸素原子、窒素原子、硫黄原子、ハロゲン原子を含むこともあり、
a、bは少なくともいずれか一方が0でない、0〜300の整数を示し、
c、dは0又は1の整数を示す)で示されるビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、
(B)熱可塑性エラストマーと、
(C)ナフタレン型エポキシ樹脂と、
(D)硬化剤と、
(E)絶縁フィラーと
を含み、
(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(C)成分が0.5〜30.0質量部であることを特徴とする、フィルム用樹脂組成物。 - (E)成分が、MgO、Al2O3、AlN、BN、ダイヤモンドフィラー、ZnO、およびSiCからなる群より選択される少なくとも1種である、請求項1記載のフィルム用樹脂組成物。
- 硬化後のフィルム用樹脂組成物の体積抵抗率が、1×1010Ω・cm以上である、請求項1または2記載のフィルム用樹脂組成物。
- (E)成分が、フィルム用樹脂組成物100質量部に対して、40〜95質量部である、請求項1〜3のいずれか1項記載のフィルム用樹脂組成物。
- 請求項1〜4のいずれか1項記載のフィルム用樹脂組成物により形成される、絶縁フィルム。
- 請求項5記載の絶縁フィルムの硬化物を含む、半導体装置。
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