JP6230363B2 - フィルム用樹脂組成物、絶縁フィルムおよび半導体装置 - Google Patents
フィルム用樹脂組成物、絶縁フィルムおよび半導体装置 Download PDFInfo
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- JP6230363B2 JP6230363B2 JP2013211444A JP2013211444A JP6230363B2 JP 6230363 B2 JP6230363 B2 JP 6230363B2 JP 2013211444 A JP2013211444 A JP 2013211444A JP 2013211444 A JP2013211444 A JP 2013211444A JP 6230363 B2 JP6230363 B2 JP 6230363B2
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- 239000011342 resin composition Substances 0.000 title claims description 52
- 239000004065 semiconductor Substances 0.000 title claims description 20
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 56
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 19
- 125000005843 halogen group Chemical group 0.000 claims description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 12
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- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
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- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
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- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
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- VWSXZUNDWRXXBJ-UHFFFAOYSA-N C1=CC=CC2=CC=CC=C12.C(C1CO1)N Chemical compound C1=CC=CC2=CC=CC=C12.C(C1CO1)N VWSXZUNDWRXXBJ-UHFFFAOYSA-N 0.000 description 1
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- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- QEHUOWVKFKSOFV-UHFFFAOYSA-N naphthalene;2-(oxiran-2-ylmethoxymethyl)oxirane Chemical compound C1OC1COCC1CO1.C1=CC=CC2=CC=CC=C21 QEHUOWVKFKSOFV-UHFFFAOYSA-N 0.000 description 1
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- 238000003756 stirring Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
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Classifications
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Description
〔1〕(A)少なくとも以下の一般式(1):
R1、R2、R3、R4、R5、R6、R7は同一又は異なってもよく、水素原子、ハロゲン原子、アルキル基、ハロゲン化アルキル基又はフェニル基であり、
−(O−X−O)−は構造式(2)で示され、ここで、R8、R9、R10、R14、R15は、同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R11、R12、R13は、同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
−(Y−O)−は構造式(3)で示される1種類の構造、又は構造式(3)で示される2種類以上の構造がランダムに配列したものであり、ここで、R16、R17は同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R18、R19は同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
Zは炭素数1以上の有機基であり、場合により酸素原子、窒素原子、硫黄原子、ハロゲン原子を含むこともあり、
a、bは少なくともいずれか一方が0でない、0〜300の整数を示し、
c、dは0又は1の整数を示す)で示されるビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、
(B)熱可塑性エラストマーと、
(C)ナフタレン型エポキシ樹脂と、
(D)硬化剤と、
(E)絶縁フィラーと
を含み、
(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(C)成分が0.5〜30.0質量部であることを特徴とする、フィルム用樹脂組成物。
〔2〕(E)成分が、MgO、Al2O3、AlN、BN、ダイヤモンドフィラー、ZnO、およびSiCからなる群より選択される少なくとも1種である、上記〔1〕記載のフィルム用樹脂組成物。
〔3〕硬化後のフィルム用樹脂組成物の体積抵抗率が、1×1010Ω・cm以上である、上記〔1〕または〔2〕記載のフィルム用樹脂組成物。
〔4〕(E)成分が、フィルム用樹脂組成物100質量部に対して、40〜95質量部である、上記〔1〕〜〔3〕のいずれか記載のフィルム用樹脂組成物。
〔5〕上記〔1〕〜〔4〕のいずれか記載のフィルム用樹脂組成物により形成される、絶縁フィルム。
〔6〕上記〔5〕記載の絶縁フィルムの硬化物を含む、半導体装置。
本発明のフィルム用樹脂組成物は、
(A)少なくとも以下の一般式(1):
R1、R2、R3、R4、R5、R6、R7は同一又は異なってもよく、水素原子、ハロゲン原子、アルキル基、ハロゲン化アルキル基又はフェニル基であり、
−(O−X−O)−は構造式(2)で示され、ここで、R8、R9、R10、R14、R15は、同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R11、R12、R13は、同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
−(Y−O)−は構造式(3)で示される1種類の構造、又は構造式(3)で示される2種類以上の構造がランダムに配列したものであり、ここで、R16、R17は同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R18、R19は同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
Zは炭素数1以上の有機基であり、場合により酸素原子、窒素原子、硫黄原子、ハロゲン原子を含むこともあり、
a、bは少なくともいずれか一方が0でない、0〜300の整数を示し、
c、dは0又は1の整数を示す)で示されるビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、
(B)熱可塑性エラストマーと、
(C)ナフタレン型エポキシ樹脂と、
(D)硬化剤と、
(E)絶縁フィラーと
を含み、
(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(C)成分が0.5〜30.0質量部であることを特徴とする。
1,3−ジグリシジルエーテルナフタレン、1,4−ジグリシジルエーテルナフタレン、1,5−ジグリシジルエーテルナフタレン、1,6−ジグリシジルエーテルナフタレン、2,6−ジグリシジルエーテルナフタレン、2,7−ジグリシジルエーテルナフタレン、
1,3−ジグリシジルエステルナフタレン、1,4−ジグリシジルエステルナフタレン、1,5−ジグリシジルエステルナフタレン、1,6−ジグリシジルエステルナフタレン、2,6−ジグリシジルエステルナフタレン、2,7−ジグリシジルエステルナフタレン、
1,3−テトラグリシジルアミンナフタレン、1,4−テトラグリシジルアミンナフタレン、1,5−テトラグリシジルアミンナフタレン、1,6−テトラグリシジルアミンナフタレン、1,8−テトラグリシジルアミンナフタレン、2,6−テトラグリシジルアミンナフタレン、2,7−テトラグリシジルアミンナフタレンなどのナフタレン型エポキシ樹脂が挙げられる。(C)成分は、上記したナフタレン型エポキシ樹脂を含むものであればよく、1種単独で用いてもよいし、2種以上を併用してもよい。特に、液状の2官能ナフタレン型エポキシ樹脂が低粘度である点から好ましい。ナフタレン型エポキシ樹脂を用いることで、接着強度(ピール強度)が向上し、フィラーの充填量を増加することができる。この結果、接着フィルムの高熱伝導化が可能となる。また、ナフタレン型エポキシ樹脂は、耐熱性にも優れており、この点からも高熱伝導用途に好適である。
本発明の絶縁フィルムは、上述のフィルム用樹脂組成物により形成される。
本発明の半導体装置は、上述の絶縁フィルムの硬化物を含む。半導体装置としては、モジュールや電子部品などの発熱体と、基板とを、絶縁フィルムの硬化物で接着したものや、基板と放熱板とを絶縁フィルムの硬化物で接着したものが挙げられる。
表1に示す配合で、(A)成分、(B)成分、(C)成分、および適量のトルエンを計量配合した後、それらを80℃に加温された反応釜に投入し、回転数150rpmで回転させながら、常圧混合を3時間行い、クリヤーを作製した。作製したクリヤーに、(D)成分、(E)成分、その他の成分を加え、プラネタリーミキサーにより分散し、フィルム用樹脂組成物を作製した。このようにして得られたフィルム用樹脂組成物を、支持体である離型処理をほどこしたPETフィルムの片面に塗布し、100℃で乾燥させることにより、支持体付の絶縁フィルムを得た。なお、比較例2は、フィルムに成形することができず、下記の熱伝導率、ピール強度の評価もできなかった。また、実施例1〜6の硬化後のフィルム用樹脂組成物の体積抵抗率は、すべて1×1010Ω・cm以上であった。具体的には、実施例1は1.5×1014Ω・cm、実施例2は2.1×1014Ω・cmであった。硬化後のフィルム用樹脂組成物の体積抵抗率は、プレス機で熱硬化(200℃、60min、0.1MPa)させた後のフィルム用樹脂組成物を試験片とし、東亜電波工業製極超絶縁計(型番:SM−8220)を用いて、試験片の体積抵抗率を測定した。
未硬化の絶縁フィルムを、プレス機で熱硬化させた(200℃、60min、0.1MPa)。硬化させた絶縁フィルムの熱伝導率を、NETZSCH社製熱伝導率計(Xeフラッシュアナライザー、型番:LFA447Nanoflash)を用いて測定した。
絶縁フィルムの両面に、粗化面を内側にして銅箔を貼りあわせ、プレス機で熱圧着させた(200℃、60min、0.1MPa)。この試験片を10mm幅にカットし、オートグラフで引きはがし、ピール強度を測定した。測定結果について、各N=5の平均値を計算した。
Claims (6)
- (A)少なくとも以下の一般式(1):
R1、R2、R3、R4、R5、R6、R7は同一又は異なってもよく、水素原子、ハロゲン原子、アルキル基、ハロゲン化アルキル基又はフェニル基であり、
−(O−X−O)−は構造式(2)で示され、ここで、R8、R9、R10、R14、R15は、同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R11、R12、R13は、同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
−(Y−O)−は構造式(3)で示される1種類の構造、又は構造式(3)で示される2種類以上の構造がランダムに配列したものであり、ここで、R16、R17は同一又は異なってもよく、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、R18、R19は同一又は異なってもよく、水素原子、ハロゲン原子又は炭素数6以下のアルキル基又はフェニル基であり、
Zは炭素数1以上の有機基であり、場合により酸素原子、窒素原子、硫黄原子、ハロゲン原子を含むこともあり、
a、bは少なくともいずれか一方が0でない、0〜300の整数を示し、
c、dは0又は1の整数を示す)で示されるビニル基が結合したフェニル基を両末端に持つポリエーテル化合物と、
(B)熱可塑性エラストマーと、
(C)ナフタレン型エポキシ樹脂と、
(D)硬化剤と、
(E)絶縁フィラーと
を含み、
(A)成分、(B)成分、(C)成分および(D)成分の合計100質量部に対して、(A)成分が10〜60質量部、(B)成分が10〜60質量部、(C)成分が0.5〜30.0質量部、および(D)成分が0.1〜10質量部であり、かつフィルム用樹脂組成物100質量部に対して、(E)成分が40〜95質量部であることを特徴とする、フィルム用樹脂組成物。 - (E)成分が、MgO、Al2O3、AlN、BN、ダイヤモンドフィラー、ZnO、およびSiCからなる群より選択される少なくとも1種である、請求項1記載のフィルム用樹脂組成物。
- 硬化後のフィルム用樹脂組成物の体積抵抗率が、1×1010Ω・cm以上である、請求項1または2記載のフィルム用樹脂組成物。
- (E)成分が、フィルム用樹脂組成物100質量部に対して、40〜95質量部である、請求項1〜3のいずれか1項記載のフィルム用樹脂組成物。
- 請求項1〜4のいずれか1項記載のフィルム用樹脂組成物により形成される、絶縁フィルム。
- 請求項5記載の絶縁フィルムの硬化物を含む、半導体装置。
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WO2014148155A1 (ja) * | 2013-03-22 | 2014-09-25 | ナミックス株式会社 | 樹脂組成物、ならびに、それによる接着フィルム、カバーレイフィルム、層間接着剤 |
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