JP2015043421A - 振幅変調された高周波エネルギーを使用してゲート誘電体をプラズマ窒化するための方法及び装置 - Google Patents
振幅変調された高周波エネルギーを使用してゲート誘電体をプラズマ窒化するための方法及び装置 Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
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Abstract
Description
[0001]本発明の実施形態は、一般に、ゲート誘電体を形成する方法及び装置に関する。より詳細には、本発明の実施形態は、窒化ゲート誘電体層を形成する方法に関する。
[0002]集積回路は、多数の、例えば、数百万の、トランジスタ、キャパシタ及び抵抗器等のデバイスで構成される。電界効果トランジスタのようなトランジスタは、通常、ソース、ドレイン及びゲートスタックを含む。ゲートスタックは、通常、シリコン基板のような基板と、ゲート誘電体と、該ゲート誘電体に設けられた多結晶シリコンのようなゲート電極とを備えている。ゲート誘電体層は、二酸化シリコン(SiO2)のような誘電体材料、或いは誘電率が4.0より大きな高Kの誘電体材料、例えば、SiON、SiN、酸化ハフニウム(HfO2)、珪酸ハフニウム(HfSiO2)、ハフニウムシリコンオキシニトライド(HfSiON)、酸化ジルコニウム(ZrO2)、珪酸ジルコニウム(ZrSiO2)、バリウムストロンチウムチタネート(BaSrTiO3、又はBST)、鉛ジルコネートチタネート(Pb(ZrTi)O3、又はPZT)等で形成される。しかしながら、この膜スタックは、他の材料で形成された層を含んでもよいことに注意されたい。
口又はスロットの配列体とを含む。マイクロ波イオン化電源は、表面波電源の一形式である。
Claims (15)
- プラズマチャンバー内で誘電体膜をプラズマ窒化する方法において、
変調された高周波(RF)電力を用いて基板を窒素含有プラズマに露出することにより、前記基板上に形成された誘電体膜をプラズマ窒化処理にかけることを含み、前記変調されたRF電力は、約2%から約50%の間のデューティーサイクルを有し、前記変調されたRF電力は、2つの隣接する変調されたRF波形の間に電力オフ時間を有する変調されたRF波形を生成する、方法。 - 前記変調されたRF電力は、2kHzから20kHzの間の繰り返し周波数を有する、請求項1に記載の方法。
- 前記電力オフ時間は、250μsである、請求項1に記載の方法。
- 各変調されたRF波形は、方形波変調RF波形を抵抗器−キャパシタフィルタに通して送り高周波を減衰して前記方形波変調RF波形を平滑化させることにより得られた、滑らかに変化する変調されたRF波形である、請求項1に記載の方法。
- 前記滑らかに変化する変調されたRF波形は、前記変調されたRF電力により形成されたイオン化電源電力の大きさがゼロであるような限定部分を有する、請求項3に記載の方法。
- ゲート誘電体をプラズマ処理する装置において、
プラズマ窒化プロセスチャンバーと、
約2%から約50%の間のデューティーサイクルを有する変調された高周波(RF)電力を発生するように構成された電力発生器と、を備え、前記変調されたRF電力は、2つの隣接する変調されたRF波形の間に電力オフ時間を有する変調されたRF波形を生成する、装置。 - 前記電力発生器は抵抗器−キャパシタフィルタを含む、請求項6に記載の装置。
- 前記電力発生器は関数発生器を含む、請求項6に記載の装置。
- 前記電力発生器は、関数発生器、RCフィルタ、及びブロードバンド増幅器を含む、請求項6に記載の装置。
- 前記電力発生器は、1kHzから100kHzの間の繰り返し周波数で、前記変調されたRF電力を発生するように構成される、請求項6に記載の装置。
- 前記変調されたRF電力は前記変調されたRF電力の大きさの時間導関数に不連続性がなく、時間の関数としてのイオン化電力の大きさは区分的に滑らかである、請求項6に記載の装置。
- 前記変調されたRF電力は、2kHzから20kHzの間の繰り返し周波数を有し、イオン化電力をピーク電力の0%から100%の間で変化させる、請求項11に記載の装置。
- 各変調されたRF波形は、方形波変調RF波形を抵抗器−キャパシタフィルタに通して送り高周波を減衰して前記方形波変調RF波形を平滑化させることにより得られた、滑らかに変化する変調されたRF波形である、請求項6に記載の装置。
- 前記滑らかに変化する変調されたRF波形は、前記変調されたRF電力により形成されたイオン化電源電力の大きさがゼロであるような限定部分を有する、請求項13に記載の装置。
- 各変調されたRF波形が、三角の波形輪郭を有する、請求項6に記載の装置。
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US47412503P | 2003-05-28 | 2003-05-28 | |
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US10/819,392 US7179754B2 (en) | 2003-05-28 | 2004-04-06 | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
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JP2022540745A (ja) * | 2019-05-23 | 2022-09-20 | コメット アーゲー | 無線周波数発生器 |
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JP5988317B2 (ja) | 2016-09-07 |
JP2012256900A (ja) | 2012-12-27 |
KR20060014424A (ko) | 2006-02-15 |
US20040242021A1 (en) | 2004-12-02 |
US7179754B2 (en) | 2007-02-20 |
US20060216944A1 (en) | 2006-09-28 |
US7514373B2 (en) | 2009-04-07 |
KR101062057B1 (ko) | 2011-09-02 |
JP2007516605A (ja) | 2007-06-21 |
WO2004107420A1 (en) | 2004-12-09 |
EP1634324A1 (en) | 2006-03-15 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |