JP2015015423A5 - - Google Patents
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- Publication number
- JP2015015423A5 JP2015015423A5 JP2013142535A JP2013142535A JP2015015423A5 JP 2015015423 A5 JP2015015423 A5 JP 2015015423A5 JP 2013142535 A JP2013142535 A JP 2013142535A JP 2013142535 A JP2013142535 A JP 2013142535A JP 2015015423 A5 JP2015015423 A5 JP 2015015423A5
- Authority
- JP
- Japan
- Prior art keywords
- active region
- region
- substrate
- semiconductor device
- gate electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- -1 Phosphorus ions Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013142535A JP6244699B2 (ja) | 2013-07-08 | 2013-07-08 | 半導体装置 |
| US14/313,529 US9748231B2 (en) | 2013-07-08 | 2014-06-24 | Semiconductor device |
| KR20140078816A KR20150006348A (ko) | 2013-07-08 | 2014-06-26 | 반도체 장치 |
| CN201410307590.2A CN104282681B (zh) | 2013-07-08 | 2014-06-30 | 半导体器件 |
| KR1020160175626A KR101762080B1 (ko) | 2013-07-08 | 2016-12-21 | 반도체 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013142535A JP6244699B2 (ja) | 2013-07-08 | 2013-07-08 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015015423A JP2015015423A (ja) | 2015-01-22 |
| JP2015015423A5 true JP2015015423A5 (https=) | 2016-05-19 |
| JP6244699B2 JP6244699B2 (ja) | 2017-12-13 |
Family
ID=52132213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013142535A Expired - Fee Related JP6244699B2 (ja) | 2013-07-08 | 2013-07-08 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9748231B2 (https=) |
| JP (1) | JP6244699B2 (https=) |
| KR (2) | KR20150006348A (https=) |
| CN (1) | CN104282681B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101776926B1 (ko) | 2010-09-07 | 2017-09-08 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| KR102494918B1 (ko) | 2017-09-12 | 2023-02-02 | 삼성전자주식회사 | 반도체 소자 |
| KR102567631B1 (ko) * | 2018-08-03 | 2023-08-16 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102756304B1 (ko) * | 2020-01-14 | 2025-01-17 | 에스케이하이닉스 주식회사 | 페이지 버퍼를 구비하는 반도체 메모리 장치 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0390327U (https=) * | 1989-12-26 | 1991-09-13 | ||
| JP4029257B2 (ja) * | 2001-02-08 | 2008-01-09 | セイコーエプソン株式会社 | 半導体装置、メモリシステムおよび電子機器 |
| JP2005197345A (ja) * | 2004-01-05 | 2005-07-21 | Hitachi Ltd | 半導体装置 |
| US7141116B2 (en) * | 2004-09-08 | 2006-11-28 | Samsung Electronics Co., Ltd. | Method for manufacturing a silicon structure |
| JP2007266377A (ja) * | 2006-03-29 | 2007-10-11 | Fujitsu Ltd | 半導体装置 |
| JP2007294629A (ja) | 2006-04-25 | 2007-11-08 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| JP2009130167A (ja) * | 2007-11-26 | 2009-06-11 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR20090056255A (ko) | 2007-11-30 | 2009-06-03 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 및 그의 제조 방법 |
| US20090189198A1 (en) * | 2008-01-25 | 2009-07-30 | Toshiba America Electronic Components, Inc. | Structures of sram bit cells |
| JP2009252825A (ja) | 2008-04-02 | 2009-10-29 | Panasonic Corp | 半導体装置およびその製造方法 |
| US8193062B2 (en) * | 2009-09-25 | 2012-06-05 | International Business Machines Corporation | Asymmetric silicon-on-insulator SRAM cell |
| JP5576095B2 (ja) * | 2009-11-12 | 2014-08-20 | ルネサスエレクトロニクス株式会社 | Ｓｒａｍ |
| JP2011243684A (ja) * | 2010-05-17 | 2011-12-01 | Renesas Electronics Corp | Ｓｒａｍ |
| JP5605134B2 (ja) | 2010-09-30 | 2014-10-15 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| KR20120101911A (ko) * | 2011-03-07 | 2012-09-17 | 삼성전자주식회사 | 에스램 셀 |
| JP5705053B2 (ja) * | 2011-07-26 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9076552B2 (en) * | 2013-07-08 | 2015-07-07 | Globalfoundries Inc. | Device including a dual port static random access memory cell and method for the formation thereof |
-
2013
- 2013-07-08 JP JP2013142535A patent/JP6244699B2/ja not_active Expired - Fee Related
-
2014
- 2014-06-24 US US14/313,529 patent/US9748231B2/en not_active Expired - Fee Related
- 2014-06-26 KR KR20140078816A patent/KR20150006348A/ko not_active Ceased
- 2014-06-30 CN CN201410307590.2A patent/CN104282681B/zh not_active Expired - Fee Related
-
2016
- 2016-12-21 KR KR1020160175626A patent/KR101762080B1/ko not_active Expired - Fee Related
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