JP2015005752A - イメージセンサで使用される埋め込みフォトダイオードの改良 - Google Patents

イメージセンサで使用される埋め込みフォトダイオードの改良 Download PDF

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Publication number
JP2015005752A
JP2015005752A JP2014126459A JP2014126459A JP2015005752A JP 2015005752 A JP2015005752 A JP 2015005752A JP 2014126459 A JP2014126459 A JP 2014126459A JP 2014126459 A JP2014126459 A JP 2014126459A JP 2015005752 A JP2015005752 A JP 2015005752A
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Prior art keywords
doped region
region
type
potential
pixel structure
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JP2014126459A
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English (en)
Japanese (ja)
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JP2015005752A5 (enExample
Inventor
クーン・デ・ムンク
De Munk Coon
トミスラフ・レセタル
Resetar Tomislav
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Application filed by Katholieke Universiteit Leuven, Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Katholieke Universiteit Leuven
Publication of JP2015005752A publication Critical patent/JP2015005752A/ja
Publication of JP2015005752A5 publication Critical patent/JP2015005752A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2014126459A 2013-06-20 2014-06-19 イメージセンサで使用される埋め込みフォトダイオードの改良 Pending JP2015005752A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13173087.1A EP2816601B1 (en) 2013-06-20 2013-06-20 Improvements in or relating to pinned photodiodes for use in image sensors
EP13173087.1 2013-06-20

Publications (2)

Publication Number Publication Date
JP2015005752A true JP2015005752A (ja) 2015-01-08
JP2015005752A5 JP2015005752A5 (enExample) 2018-07-19

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JP2014126459A Pending JP2015005752A (ja) 2013-06-20 2014-06-19 イメージセンサで使用される埋め込みフォトダイオードの改良

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Country Link
US (1) US9537028B2 (enExample)
EP (1) EP2816601B1 (enExample)
JP (1) JP2015005752A (enExample)

Cited By (8)

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WO2017043068A1 (ja) * 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP2018148097A (ja) * 2017-03-07 2018-09-20 パナソニックＩｐマネジメント株式会社 固体撮像素子
US11330205B2 (en) 2018-08-28 2022-05-10 Panasonic Intellectual Property Management Co., Ltd. Photosensor, image sensor, and photosensor driving method
KR20230009400A (ko) 2020-05-08 2023-01-17 하마마츠 포토닉스 가부시키가이샤 광 검출 장치, 및 광 센서의 구동 방법
JP2023502183A (ja) * 2020-01-28 2023-01-20 アダップス・フォトニクス・インコーポレイテッド 単一光子アバランシェダイオード装置
KR20230084484A (ko) 2020-10-14 2023-06-13 하마마츠 포토닉스 가부시키가이샤 광 센서
US11888003B2 (en) 2018-03-30 2024-01-30 Panasonic Intellectual Property Management Co., Ltd. Photodetector
US12080729B2 (en) 2019-03-28 2024-09-03 Panasonic Intellectual Property Management Co., Ltd. Photodetector

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US9786710B2 (en) * 2015-09-30 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with sub-isolation in pixels
US9847363B2 (en) 2015-10-20 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with a radiation sensing region and method for forming the same
DE102016114804B4 (de) * 2015-10-20 2021-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und Verfahren für deren Herstellung
US9923024B1 (en) * 2017-05-26 2018-03-20 Omnivision Technologies, Inc. CMOS image sensor with reduced cross talk
US10672934B2 (en) * 2017-10-31 2020-06-02 Taiwan Semiconductor Manufacturing Company Ltd. SPAD image sensor and associated fabricating method
US11348955B2 (en) * 2018-06-05 2022-05-31 Brillnics Singapore Pte. Ltd. Pixel structure for image sensors
US11089251B2 (en) * 2018-07-12 2021-08-10 Canon Kabushiki Kaisha Image sensor and image capturing apparatus
EP3598498B1 (en) * 2018-07-16 2023-08-30 IMEC vzw A pixel architecture and an image sensor
JP7471817B2 (ja) 2019-12-27 2024-04-22 浜松ホトニクス株式会社 増倍型イメージセンサ
CN110993710B (zh) * 2019-12-30 2021-11-02 上海集成电路研发中心有限公司 一种单光子雪崩二极管及其制备方法
KR20210121851A (ko) 2020-03-31 2021-10-08 에스케이하이닉스 주식회사 이미지 센싱 장치
CN115084177A (zh) * 2022-06-27 2022-09-20 上海华力微电子有限公司 Cmos图像传感器的制备方法
WO2025206731A1 (ko) * 2024-03-29 2025-10-02 엘지이노텍 주식회사 수광 소자 및 라이다 장치

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JPH02111069A (ja) * 1988-10-20 1990-04-24 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JPH039565A (ja) * 1989-06-07 1991-01-17 Matsushita Electron Corp 固体撮像装置
JPH05211321A (ja) * 1991-10-25 1993-08-20 Canon Inc アバランシェフォトダイオード、及びそれを具備する信号処理装置
JP2003258232A (ja) * 2002-03-06 2003-09-12 Sony Corp 固体撮像素子
US20050051808A1 (en) * 2003-09-04 2005-03-10 Jaroslav Hynecek Dual gate bcmd pixel suitable for high performance cmos image sensor arrays
US20070069315A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
WO2009103048A1 (en) * 2008-02-14 2009-08-20 Quantum Semiconductor Llc Dual photo-diode cmos pixels
WO2012032353A2 (en) * 2010-09-08 2012-03-15 The University Court Of The University Of Edinburgh Single photon avalanche diode for cmos circuits
US20120175497A1 (en) * 2011-01-11 2012-07-12 Jaroslav Hynecek Image sensor pixels with back-gate-modulated vertical transistor
US8339494B1 (en) * 2011-07-29 2012-12-25 Truesense Imaging, Inc. Image sensor with controllable vertically integrated photodetectors
US20130015325A1 (en) * 2011-07-11 2013-01-17 Jung-Chak Ahn Backside illuminated image sensor

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FR2961347B1 (fr) 2010-06-15 2012-08-24 E2V Semiconductors Capteur d'image a multiplication d'electrons
FR2973160B1 (fr) 2011-03-23 2013-03-29 E2V Semiconductors Capteur d'image a multiplication d'electrons

Patent Citations (12)

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JPH02111069A (ja) * 1988-10-20 1990-04-24 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JPH039565A (ja) * 1989-06-07 1991-01-17 Matsushita Electron Corp 固体撮像装置
JPH05211321A (ja) * 1991-10-25 1993-08-20 Canon Inc アバランシェフォトダイオード、及びそれを具備する信号処理装置
JP2003258232A (ja) * 2002-03-06 2003-09-12 Sony Corp 固体撮像素子
US20050051808A1 (en) * 2003-09-04 2005-03-10 Jaroslav Hynecek Dual gate bcmd pixel suitable for high performance cmos image sensor arrays
US20070069315A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US20070069260A1 (en) * 2005-09-28 2007-03-29 Eastman Kodak Company Photodetector structure for improved collection efficiency
WO2009103048A1 (en) * 2008-02-14 2009-08-20 Quantum Semiconductor Llc Dual photo-diode cmos pixels
WO2012032353A2 (en) * 2010-09-08 2012-03-15 The University Court Of The University Of Edinburgh Single photon avalanche diode for cmos circuits
US20120175497A1 (en) * 2011-01-11 2012-07-12 Jaroslav Hynecek Image sensor pixels with back-gate-modulated vertical transistor
US20130015325A1 (en) * 2011-07-11 2013-01-17 Jung-Chak Ahn Backside illuminated image sensor
US8339494B1 (en) * 2011-07-29 2012-12-25 Truesense Imaging, Inc. Image sensor with controllable vertically integrated photodetectors

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017043068A1 (ja) * 2015-09-09 2018-02-15 パナソニックＩｐマネジメント株式会社 固体撮像素子
CN107949913A (zh) * 2015-09-09 2018-04-20 松下知识产权经营株式会社 固体摄像元件
US10192920B2 (en) 2015-09-09 2019-01-29 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device
CN107949913B (zh) * 2015-09-09 2019-04-19 松下知识产权经营株式会社 固体摄像元件
WO2017043068A1 (ja) * 2015-09-09 2017-03-16 パナソニックＩｐマネジメント株式会社 固体撮像素子
JP2018148097A (ja) * 2017-03-07 2018-09-20 パナソニックＩｐマネジメント株式会社 固体撮像素子
US11888003B2 (en) 2018-03-30 2024-01-30 Panasonic Intellectual Property Management Co., Ltd. Photodetector
US12113078B2 (en) 2018-03-30 2024-10-08 Panasonic Intellectual Property Management Co., Ltd. Photodetector
US11330205B2 (en) 2018-08-28 2022-05-10 Panasonic Intellectual Property Management Co., Ltd. Photosensor, image sensor, and photosensor driving method
US12080729B2 (en) 2019-03-28 2024-09-03 Panasonic Intellectual Property Management Co., Ltd. Photodetector
JP7319743B2 (ja) 2020-01-28 2023-08-02 アダップス・フォトニクス・インコーポレイテッド 単一光子アバランシェダイオード装置
JP2023502183A (ja) * 2020-01-28 2023-01-20 アダップス・フォトニクス・インコーポレイテッド 単一光子アバランシェダイオード装置
DE112021002774T5 (de) 2020-05-08 2023-06-01 Hamamatsu Photonics K.K. Lichtdetektionsvorrichtung und Verfahren zur Steuerung eines Lichtsensors
KR20230009400A (ko) 2020-05-08 2023-01-17 하마마츠 포토닉스 가부시키가이샤 광 검출 장치, 및 광 센서의 구동 방법
KR20230084484A (ko) 2020-10-14 2023-06-13 하마마츠 포토닉스 가부시키가이샤 광 센서

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US20140374867A1 (en) 2014-12-25
EP2816601A1 (en) 2014-12-24
EP2816601B1 (en) 2017-03-01
US9537028B2 (en) 2017-01-03

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