FR2973160B1 - Capteur d'image a multiplication d'electrons - Google Patents

Capteur d'image a multiplication d'electrons

Info

Publication number
FR2973160B1
FR2973160B1 FR1152413A FR1152413A FR2973160B1 FR 2973160 B1 FR2973160 B1 FR 2973160B1 FR 1152413 A FR1152413 A FR 1152413A FR 1152413 A FR1152413 A FR 1152413A FR 2973160 B1 FR2973160 B1 FR 2973160B1
Authority
FR
France
Prior art keywords
image sensor
electron multiplication
multiplication image
electron
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1152413A
Other languages
English (en)
Other versions
FR2973160A1 (fr
Inventor
Pierre Fereyre
Frederic Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR1152413A priority Critical patent/FR2973160B1/fr
Priority to EP12160048.0A priority patent/EP2503596B1/fr
Priority to CA2771968A priority patent/CA2771968A1/fr
Priority to JP2012063921A priority patent/JP6057275B2/ja
Priority to US13/427,826 priority patent/US9040890B2/en
Priority to CN201210079323.5A priority patent/CN102693993B/zh
Publication of FR2973160A1 publication Critical patent/FR2973160A1/fr
Application granted granted Critical
Publication of FR2973160B1 publication Critical patent/FR2973160B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR1152413A 2011-03-23 2011-03-23 Capteur d'image a multiplication d'electrons Expired - Fee Related FR2973160B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1152413A FR2973160B1 (fr) 2011-03-23 2011-03-23 Capteur d'image a multiplication d'electrons
EP12160048.0A EP2503596B1 (fr) 2011-03-23 2012-03-19 Capteur d'image à multiplication d'electrons
CA2771968A CA2771968A1 (fr) 2011-03-23 2012-03-20 Capteur d'images a multiplication d'electrons
JP2012063921A JP6057275B2 (ja) 2011-03-23 2012-03-21 電子増倍画像センサ
US13/427,826 US9040890B2 (en) 2011-03-23 2012-03-22 Electron-multiplication image sensor
CN201210079323.5A CN102693993B (zh) 2011-03-23 2012-03-23 电子倍增图像传感器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152413A FR2973160B1 (fr) 2011-03-23 2011-03-23 Capteur d'image a multiplication d'electrons

Publications (2)

Publication Number Publication Date
FR2973160A1 FR2973160A1 (fr) 2012-09-28
FR2973160B1 true FR2973160B1 (fr) 2013-03-29

Family

ID=45814431

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152413A Expired - Fee Related FR2973160B1 (fr) 2011-03-23 2011-03-23 Capteur d'image a multiplication d'electrons

Country Status (6)

Country Link
US (1) US9040890B2 (fr)
EP (1) EP2503596B1 (fr)
JP (1) JP6057275B2 (fr)
CN (1) CN102693993B (fr)
CA (1) CA2771968A1 (fr)
FR (1) FR2973160B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2973160B1 (fr) * 2011-03-23 2013-03-29 E2V Semiconductors Capteur d'image a multiplication d'electrons
JP5573978B2 (ja) * 2012-02-09 2014-08-20 株式会社デンソー 固体撮像素子およびその駆動方法
JP5924132B2 (ja) * 2012-05-28 2016-05-25 株式会社デンソー 固体撮像素子
EP2816601B1 (fr) 2013-06-20 2017-03-01 IMEC vzw Améliorations apportées ou se rapportant à des photodiodes pour utilisation dans des capteurs d'image
JP6141160B2 (ja) 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
FR3011980B1 (fr) * 2013-10-14 2015-11-13 E2V Semiconductors Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels
FR3031237B1 (fr) * 2014-12-29 2016-12-23 E2V Semiconductors Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons
FR3049767B1 (fr) * 2016-04-05 2018-03-16 Teledyne E2V Semiconductors Sas Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons
JP7002893B2 (ja) 2016-12-13 2022-01-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
WO2018110302A1 (fr) * 2016-12-13 2018-06-21 Sony Semiconductor Solutions Corporation Élément d'imagerie et dispositif électronique
US11367792B2 (en) * 2019-11-01 2022-06-21 Hefei Xinsheng Optoelectronics Technology Co., Ltd Thin film transistor, fabricating method thereof, and display apparatus
CN111405210B (zh) * 2020-03-20 2022-01-28 中国电子科技集团公司第四十四研究所 像元级倍增内线帧转移ccd像素结构
CN111405208B (zh) * 2020-03-20 2021-12-14 中国电子科技集团公司第四十四研究所 内线帧转移ccd
CN111988546B (zh) * 2020-09-15 2023-03-31 哈尔滨工程大学 一种倍增ccd倍增增益及读出噪声测量方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4399693B2 (ja) * 2000-09-21 2010-01-20 ソニー株式会社 撮像装置
JP4280822B2 (ja) * 2004-02-18 2009-06-17 国立大学法人静岡大学 光飛行時間型距離センサ
US7297917B2 (en) * 2005-03-24 2007-11-20 Micron Technology, Inc. Readout technique for increasing or maintaining dynamic range in image sensors
JP4212623B2 (ja) * 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
JP4198166B2 (ja) * 2006-07-27 2008-12-17 三洋電機株式会社 撮像装置
JP2008060550A (ja) * 2006-07-31 2008-03-13 Sanyo Electric Co Ltd 撮像装置
JP2008193163A (ja) * 2007-01-31 2008-08-21 Sanyo Electric Co Ltd 固体撮像装置
JP2008192648A (ja) * 2007-01-31 2008-08-21 Sanyo Electric Co Ltd 撮像装置
JP2009054870A (ja) * 2007-08-28 2009-03-12 Sanyo Electric Co Ltd 撮像装置
JP2009135242A (ja) * 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 撮像装置
FR2924862B1 (fr) 2007-12-10 2010-08-13 Commissariat Energie Atomique Dispositif microelectronique photosensible avec multiplicateurs par avalanche
US20090152605A1 (en) * 2007-12-18 2009-06-18 Sanyo Electric Co., Ltd. Image sensor and cmos image sensor
JP5568880B2 (ja) 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP2009278241A (ja) * 2008-05-13 2009-11-26 Canon Inc 固体撮像装置の駆動方法および固体撮像装置
JP2010027668A (ja) * 2008-07-15 2010-02-04 Sanyo Electric Co Ltd 撮像装置
FR2939999B1 (fr) * 2008-12-12 2011-02-25 E2V Semiconductors Capteur d'image a double transfert de charges pour grande dynamique et procede de lecture
JP2010268269A (ja) * 2009-05-15 2010-11-25 Sanyo Electric Co Ltd 撮像装置
FR2961347B1 (fr) * 2010-06-15 2012-08-24 E2V Semiconductors Capteur d'image a multiplication d'electrons
JP5558278B2 (ja) * 2010-09-10 2014-07-23 株式会社東芝 固体撮像装置
FR2973162B1 (fr) * 2011-03-23 2013-11-22 E2V Semiconductors Capteur d'image a tres haute dynamique
FR2973160B1 (fr) * 2011-03-23 2013-03-29 E2V Semiconductors Capteur d'image a multiplication d'electrons

Also Published As

Publication number Publication date
CA2771968A1 (fr) 2012-09-23
FR2973160A1 (fr) 2012-09-28
JP6057275B2 (ja) 2017-01-11
JP2012205304A (ja) 2012-10-22
US20120292483A1 (en) 2012-11-22
US9040890B2 (en) 2015-05-26
CN102693993A (zh) 2012-09-26
EP2503596B1 (fr) 2013-12-18
EP2503596A1 (fr) 2012-09-26
CN102693993B (zh) 2016-08-03

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Legal Events

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ST Notification of lapse

Effective date: 20151130