FR3011980B1 - Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels - Google Patents

Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels

Info

Publication number
FR3011980B1
FR3011980B1 FR1359933A FR1359933A FR3011980B1 FR 3011980 B1 FR3011980 B1 FR 3011980B1 FR 1359933 A FR1359933 A FR 1359933A FR 1359933 A FR1359933 A FR 1359933A FR 3011980 B1 FR3011980 B1 FR 3011980B1
Authority
FR
France
Prior art keywords
image sensor
electron multiplication
pixel reading
multiplication image
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1359933A
Other languages
English (en)
Other versions
FR3011980A1 (fr
Inventor
Pierre Fereyre
Frederic Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1359933A priority Critical patent/FR3011980B1/fr
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to CA2927430A priority patent/CA2927430A1/fr
Priority to EP14781892.6A priority patent/EP3058718A1/fr
Priority to PCT/EP2014/071655 priority patent/WO2015055501A1/fr
Priority to JP2016522058A priority patent/JP2016534596A/ja
Priority to US15/028,473 priority patent/US20160255295A1/en
Priority to TW103135544A priority patent/TW201532439A/zh
Publication of FR3011980A1 publication Critical patent/FR3011980A1/fr
Application granted granted Critical
Publication of FR3011980B1 publication Critical patent/FR3011980B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR1359933A 2013-10-14 2013-10-14 Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels Expired - Fee Related FR3011980B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1359933A FR3011980B1 (fr) 2013-10-14 2013-10-14 Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels
EP14781892.6A EP3058718A1 (fr) 2013-10-14 2014-10-09 Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels
PCT/EP2014/071655 WO2015055501A1 (fr) 2013-10-14 2014-10-09 Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels
JP2016522058A JP2016534596A (ja) 2013-10-14 2014-10-09 画素の電子増倍及びグループ読み出しを伴う画像センサ
CA2927430A CA2927430A1 (fr) 2013-10-14 2014-10-09 Image sensor with electron multiplication and grouped readout of pixels
US15/028,473 US20160255295A1 (en) 2013-10-14 2014-10-09 Image sensor with electron multiplication and grouped readout of pixels
TW103135544A TW201532439A (zh) 2013-10-14 2014-10-14 具有電子倍增和像素的成組讀出之影像感測器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1359933A FR3011980B1 (fr) 2013-10-14 2013-10-14 Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels

Publications (2)

Publication Number Publication Date
FR3011980A1 FR3011980A1 (fr) 2015-04-17
FR3011980B1 true FR3011980B1 (fr) 2015-11-13

Family

ID=50478487

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1359933A Expired - Fee Related FR3011980B1 (fr) 2013-10-14 2013-10-14 Capteur d'image a multiplication d'electrons et a lecture regroupee de pixels

Country Status (7)

Country Link
US (1) US20160255295A1 (fr)
EP (1) EP3058718A1 (fr)
JP (1) JP2016534596A (fr)
CA (1) CA2927430A1 (fr)
FR (1) FR3011980B1 (fr)
TW (1) TW201532439A (fr)
WO (1) WO2015055501A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734419B2 (en) 2018-10-31 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Imaging device with uniform photosensitive region array

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192648A (ja) * 2007-01-31 2008-08-21 Sanyo Electric Co Ltd 撮像装置
FR2973162B1 (fr) * 2011-03-23 2013-11-22 E2V Semiconductors Capteur d'image a tres haute dynamique
FR2973160B1 (fr) * 2011-03-23 2013-03-29 E2V Semiconductors Capteur d'image a multiplication d'electrons

Also Published As

Publication number Publication date
JP2016534596A (ja) 2016-11-04
TW201532439A (zh) 2015-08-16
WO2015055501A1 (fr) 2015-04-23
EP3058718A1 (fr) 2016-08-24
FR3011980A1 (fr) 2015-04-17
CA2927430A1 (fr) 2015-04-23
US20160255295A1 (en) 2016-09-01

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