HK1221818A1 - 具有多個存儲節點的圖像傳感器像素 - Google Patents

具有多個存儲節點的圖像傳感器像素

Info

Publication number
HK1221818A1
HK1221818A1 HK16109300.8A HK16109300A HK1221818A1 HK 1221818 A1 HK1221818 A1 HK 1221818A1 HK 16109300 A HK16109300 A HK 16109300A HK 1221818 A1 HK1221818 A1 HK 1221818A1
Authority
HK
Hong Kong
Prior art keywords
image sensor
storage nodes
multiple storage
sensor pixel
pixel
Prior art date
Application number
HK16109300.8A
Other languages
English (en)
Inventor
伊賢敏
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of HK1221818A1 publication Critical patent/HK1221818A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK16109300.8A 2014-12-01 2016-08-04 具有多個存儲節點的圖像傳感器像素 HK1221818A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/557,075 US9461088B2 (en) 2014-12-01 2014-12-01 Image sensor pixel with multiple storage nodes

Publications (1)

Publication Number Publication Date
HK1221818A1 true HK1221818A1 (zh) 2017-06-09

Family

ID=56079655

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16109300.8A HK1221818A1 (zh) 2014-12-01 2016-08-04 具有多個存儲節點的圖像傳感器像素

Country Status (4)

Country Link
US (1) US9461088B2 (zh)
CN (1) CN105655363B (zh)
HK (1) HK1221818A1 (zh)
TW (1) TWI573461B (zh)

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US9578265B2 (en) * 2015-06-11 2017-02-21 Stmicroelectronics (Grenoble 2) Sas Double charge storage area image capture device pixel structure
US9888200B2 (en) * 2015-07-31 2018-02-06 Pixart Imaging Inc. Image sensor and operating method thereof
JP2017135693A (ja) * 2016-01-21 2017-08-03 パナソニックＩｐマネジメント株式会社 撮像装置
DE102017202754B4 (de) * 2016-10-14 2022-08-04 Infineon Technologies Ag Optische Sensoreinrichtung und Verfahren zur Ansteuerung der optischen Sensoreinrichtung
US10110840B2 (en) * 2016-10-25 2018-10-23 Semiconductor Components Industries, Llc Image sensor pixels with overflow capabilities
CN106686324B (zh) * 2016-12-12 2019-06-07 西北核技术研究所 Cmos图像传感器的像元结构、cmos图像传感器及其成像方法
US9881964B1 (en) * 2017-02-08 2018-01-30 Omnivision Technologies, Inc. Image sensor with inverted source follower
US10469775B2 (en) * 2017-03-31 2019-11-05 Semiconductor Components Industries, Llc High dynamic range storage gate pixel circuitry
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US10477133B2 (en) * 2017-10-02 2019-11-12 Sony Semiconductor Solutions Corporation Solid-state imaging sensor and solid-state imaging device
CN107846559B (zh) * 2017-10-09 2021-06-15 上海集成电路研发中心有限公司 一种高动态范围的图像传感器结构及其驱动方法
AU2018386190A1 (en) * 2017-12-13 2020-06-04 Magic Leap, Inc. Global shutter pixel circuit and method for computer vision applications
CN109951659B (zh) * 2017-12-20 2020-08-25 比亚迪股份有限公司 一种cmos图像传感器及其读出电路
JP7075208B2 (ja) * 2017-12-22 2022-05-25 キヤノン株式会社 撮像装置および撮像システム
US10566359B1 (en) 2018-08-22 2020-02-18 Omnivision Technologies, Inc. Variably biased isolation structure for global shutter pixel storage node
US11272118B2 (en) 2018-10-11 2022-03-08 Stmicroelectronics (Grenoble 2) Sas Method for processing signals from an imaging device, and associated device
CN109346496A (zh) * 2018-11-23 2019-02-15 德淮半导体有限公司 像素单元、图像传感器及其制造方法
CN109979955B (zh) * 2019-04-03 2021-06-18 上海华力微电子有限公司 一种半导体结构及其制造方法
CN110277416B (zh) 2019-05-09 2021-08-13 上海华力微电子有限公司 全局快门cmos图像传感器
WO2020227880A1 (zh) * 2019-05-13 2020-11-19 深圳市汇顶科技股份有限公司 像素单元、像素单元的控制方法、图像传感器和终端
WO2020241289A1 (ja) * 2019-05-31 2020-12-03 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置、及びそれを用いる撮像装置
US11272132B2 (en) * 2019-06-07 2022-03-08 Pacific Biosciences Of California, Inc. Temporal differential active pixel sensor
US11218653B2 (en) * 2019-07-09 2022-01-04 Semiconductor Components Industries, Llc Methods and circuitry for improving global shutter efficiency in backside illuminated high dynamic range image sensor pixels
CN110797368A (zh) * 2019-12-10 2020-02-14 上海微阱电子科技有限公司 图像传感器单元及其制备方法
KR20210115715A (ko) * 2020-03-16 2021-09-27 에스케이하이닉스 주식회사 이미지 센싱 장치 및 그의 동작 방법
US11457163B1 (en) * 2021-07-16 2022-09-27 Pixart Imaging Inc. Image sensor device capable of improving signal discrimination in dark condition and avoiding signal saturation in bright condition
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Also Published As

Publication number Publication date
CN105655363B (zh) 2019-02-05
US20160155768A1 (en) 2016-06-02
CN105655363A (zh) 2016-06-08
TWI573461B (zh) 2017-03-01
TW201626783A (zh) 2016-07-16
US9461088B2 (en) 2016-10-04

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