HK1210319A1 - 平面布局最佳化的堆棧式影像傳感器及其方法 - Google Patents

平面布局最佳化的堆棧式影像傳感器及其方法

Info

Publication number
HK1210319A1
HK1210319A1 HK15110956.4A HK15110956A HK1210319A1 HK 1210319 A1 HK1210319 A1 HK 1210319A1 HK 15110956 A HK15110956 A HK 15110956A HK 1210319 A1 HK1210319 A1 HK 1210319A1
Authority
HK
Hong Kong
Prior art keywords
floorplan
image sensor
associated methods
stacked image
optimized stacked
Prior art date
Application number
HK15110956.4A
Other languages
English (en)
Inventor
Jie Shen
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of HK1210319A1 publication Critical patent/HK1210319A1/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK15110956.4A 2014-04-07 2015-11-06 平面布局最佳化的堆棧式影像傳感器及其方法 HK1210319A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/246,859 US9652575B2 (en) 2014-04-07 2014-04-07 Floorplan-optimized stacked image sensor and associated methods

Publications (1)

Publication Number Publication Date
HK1210319A1 true HK1210319A1 (zh) 2016-04-15

Family

ID=54210871

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15110956.4A HK1210319A1 (zh) 2014-04-07 2015-11-06 平面布局最佳化的堆棧式影像傳感器及其方法

Country Status (4)

Country Link
US (1) US9652575B2 (zh)
CN (1) CN104979366B (zh)
HK (1) HK1210319A1 (zh)
TW (1) TWI553498B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648986B (zh) * 2014-04-15 2019-01-21 日商新力股份有限公司 攝像元件、電子機器
EP3288081B1 (en) * 2015-04-24 2022-07-27 Sony Group Corporation Solid state image sensor and electronic device comprising the same
US9571765B2 (en) * 2015-06-25 2017-02-14 General Electric Company Universal four-side buttable digital CMOS imager
US9749569B2 (en) 2015-12-22 2017-08-29 Omnivision Technologies, Inc. High speed rolling image sensor with ADM architecture and method of implementing thereof
US10686003B2 (en) 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
US10283557B2 (en) 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
US10269854B2 (en) * 2016-04-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Rerouting method and a structure for stacked image sensors
EP3324545B1 (en) * 2016-11-22 2024-04-24 ams AG Image sensor and method for readout of an image sensor
KR20200097841A (ko) 2019-02-08 2020-08-20 삼성전자주식회사 이미지 센서 장치
KR20200098802A (ko) 2019-02-12 2020-08-21 삼성전자주식회사 디지털 픽셀을 포함하는 이미지 센서

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7506295B1 (en) 2002-12-31 2009-03-17 Cadence Design Systems, Inc. Non manhattan floor plan architecture for integrated circuits
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
SE533293C2 (sv) * 2008-10-10 2010-08-17 Zoran Corp Analog/digital-omvandlare
US20110156195A1 (en) 2009-12-31 2011-06-30 Tivarus Cristian A Interwafer interconnects for stacked CMOS image sensors
EP2708021B1 (en) * 2011-05-12 2019-07-10 DePuy Synthes Products, Inc. Image sensor with tolerance optimizing interconnects
TWI457575B (zh) * 2012-04-06 2014-10-21 Ind Tech Res Inst 具有自我測試的像素陣列模組及其自我測試方法
US9350928B2 (en) * 2012-05-02 2016-05-24 Semiconductor Components Industries, Llc Image data compression using stacked-chip image sensors
KR20150020849A (ko) * 2013-08-19 2015-02-27 에스케이하이닉스 주식회사 비휘발성 메모리 장치, 이를 이용하는 반도체 시스템 및 컴퓨터 장치

Also Published As

Publication number Publication date
CN104979366B (zh) 2020-04-03
US20150288908A1 (en) 2015-10-08
TW201602818A (zh) 2016-01-16
US9652575B2 (en) 2017-05-16
CN104979366A (zh) 2015-10-14
TWI553498B (zh) 2016-10-11

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