HK1216051A1 - 可見光及紅外線圖像傳感器 - Google Patents
可見光及紅外線圖像傳感器Info
- Publication number
- HK1216051A1 HK1216051A1 HK16103952.2A HK16103952A HK1216051A1 HK 1216051 A1 HK1216051 A1 HK 1216051A1 HK 16103952 A HK16103952 A HK 16103952A HK 1216051 A1 HK1216051 A1 HK 1216051A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- visible
- image sensor
- infrared image
- infrared
- sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
Landscapes
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/341,257 US9806122B2 (en) | 2014-07-25 | 2014-07-25 | Visible and infrared image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1216051A1 true HK1216051A1 (zh) | 2016-10-07 |
Family
ID=53785438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK16103952.2A HK1216051A1 (zh) | 2014-07-25 | 2016-04-07 | 可見光及紅外線圖像傳感器 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9806122B2 (zh) |
| EP (1) | EP2978022B1 (zh) |
| CN (1) | CN105321966B (zh) |
| HK (1) | HK1216051A1 (zh) |
| TW (1) | TWI593092B (zh) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI694604B (zh) * | 2015-07-23 | 2020-05-21 | 光澄科技股份有限公司 | 光偵測器 |
| US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
| US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
| US10861888B2 (en) | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
| CN108028258B (zh) * | 2015-08-04 | 2022-06-21 | 光程研创股份有限公司 | 锗硅感光设备 |
| EP3783656B1 (en) | 2015-08-27 | 2023-08-23 | Artilux Inc. | Wide spectrum optical sensor |
| US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
| US10741598B2 (en) | 2015-11-06 | 2020-08-11 | Atrilux, Inc. | High-speed light sensing apparatus II |
| US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
| US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
| US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
| US9859325B2 (en) * | 2015-11-13 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium |
| US9871067B2 (en) * | 2015-11-17 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Infrared image sensor component |
| EP3404714B1 (en) * | 2016-01-15 | 2020-01-01 | Towerjazz Panasonic Semiconductor Co., Ltd. | Solid-state image capture device |
| TWI846526B (zh) * | 2016-02-12 | 2024-06-21 | 光程研創股份有限公司 | 光學感測器及光學系統 |
| US10638054B2 (en) * | 2017-01-25 | 2020-04-28 | Cista System Corp. | System and method for visible and infrared high dynamic range sensing |
| KR102604687B1 (ko) | 2017-02-01 | 2023-11-20 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US10090347B1 (en) | 2017-05-24 | 2018-10-02 | Semiconductor Components Industries, Llc | Image sensor with near-infrared and visible light pixels |
| DE102017120499A1 (de) * | 2017-05-29 | 2018-11-29 | Friedrich-Schiller-Universität Jena | Strahlungsdetektierendes Halbleiterbauelement |
| TWI630556B (zh) * | 2017-07-26 | 2018-07-21 | 聚晶半導體股份有限公司 | 影像擷取裝置及其紅外線感測方法 |
| US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
| TWI788246B (zh) | 2018-02-23 | 2022-12-21 | 美商光程研創股份有限公司 | 光偵測裝置 |
| CN112236686B (zh) | 2018-04-08 | 2022-01-07 | 奥特逻科公司 | 光探测装置 |
| US10854770B2 (en) | 2018-05-07 | 2020-12-01 | Artilux, Inc. | Avalanche photo-transistor |
| US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
| JP7271127B2 (ja) * | 2018-10-19 | 2023-05-11 | キヤノン株式会社 | 光電変換装置 |
| US11329085B2 (en) * | 2019-08-22 | 2022-05-10 | Omivision Technologies, Inc. | Pixel array with isolated pixels |
| KR20210060734A (ko) * | 2019-11-18 | 2021-05-27 | 삼성디스플레이 주식회사 | 광 센서 및 이를 포함하는 전자 장치 및 이의 제조 방법 |
| US11626442B2 (en) * | 2020-08-10 | 2023-04-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming image sensors |
| CN115332274A (zh) * | 2021-05-10 | 2022-11-11 | 联华电子股份有限公司 | 影像传感器 |
| US12051704B2 (en) * | 2021-08-30 | 2024-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pixel array including octagon pixel sensors |
| US20230067975A1 (en) * | 2021-08-31 | 2023-03-02 | Omnivision Technologies, Inc. | Image sensor with varying depth deep trench isolation structure for reduced crosstalk |
| CN114038867B (zh) * | 2021-11-03 | 2024-08-30 | 云南昆物新跃光电科技有限公司 | 实现彩色成像的InGaAs短波红外探测器芯片及其制备 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453611A (en) | 1993-01-01 | 1995-09-26 | Canon Kabushiki Kaisha | Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip |
| KR100400808B1 (ko) | 1997-06-24 | 2003-10-08 | 매사츄세츠 인스티튜트 오브 테크놀러지 | 그레이드된 ＧｅＳｉ층 및 평탄화를 사용한 Ｓｉ상의 Ｇｅ의 쓰레딩 전위 밀도 제어 |
| US7164182B2 (en) | 2003-07-07 | 2007-01-16 | Micron Technology, Inc. | Pixel with strained silicon layer for improving carrier mobility and blue response in imagers |
| US6958194B1 (en) * | 2003-10-21 | 2005-10-25 | Foveon, Inc. | Imager with improved sensitivity |
| US20060157806A1 (en) | 2005-01-18 | 2006-07-20 | Omnivision Technologies, Inc. | Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response |
| CN101459184B (zh) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 在cmos上感测图像的系统和方法 |
| US7910961B2 (en) | 2008-10-08 | 2011-03-22 | Omnivision Technologies, Inc. | Image sensor with low crosstalk and high red sensitivity |
| US7915652B2 (en) * | 2008-10-24 | 2011-03-29 | Sharp Laboratories Of America, Inc. | Integrated infrared and color CMOS imager sensor |
| EP2180513A1 (en) * | 2008-10-27 | 2010-04-28 | Stmicroelectronics SA | Near infrared/color image sensor |
| TWI445166B (zh) | 2008-11-07 | 2014-07-11 | Sony Corp | 固態成像裝置，製造固態成像裝置之方法、及電子設備 |
| US20110169991A1 (en) * | 2010-01-08 | 2011-07-14 | Omnivision Technologies, Inc. | Image sensor with epitaxially self-aligned photo sensors |
| JP2012064709A (ja) | 2010-09-15 | 2012-03-29 | Sony Corp | 固体撮像装置及び電子機器 |
| JP6308760B2 (ja) * | 2012-12-20 | 2018-04-11 | キヤノン株式会社 | 光電変換装置および光電変換装置を有する撮像装置 |
| JP2014127945A (ja) * | 2012-12-27 | 2014-07-07 | Rohm Co Ltd | 検査システム、検査方法、画素回路及びイメージセンサ |
| US9153620B2 (en) * | 2014-03-03 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a metal grid for semiconductor device |
-
2014
- 2014-07-25 US US14/341,257 patent/US9806122B2/en active Active
- 2014-11-03 TW TW103138108A patent/TWI593092B/zh active
- 2014-12-24 CN CN201410817565.9A patent/CN105321966B/zh active Active
-
2015
- 2015-07-16 EP EP15177089.8A patent/EP2978022B1/en active Active
-
2016
- 2016-04-07 HK HK16103952.2A patent/HK1216051A1/zh unknown
-
2017
- 2017-09-27 US US15/717,071 patent/US10283553B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201605030A (zh) | 2016-02-01 |
| EP2978022B1 (en) | 2019-01-09 |
| US10283553B2 (en) | 2019-05-07 |
| US20160027837A1 (en) | 2016-01-28 |
| CN105321966A (zh) | 2016-02-10 |
| CN105321966B (zh) | 2018-08-07 |
| EP2978022A3 (en) | 2016-08-24 |
| EP2978022A2 (en) | 2016-01-27 |
| TWI593092B (zh) | 2017-07-21 |
| US20180019278A1 (en) | 2018-01-18 |
| US9806122B2 (en) | 2017-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| HK1216051A1 (zh) | 可見光及紅外線圖像傳感器 | |
| HK1212817A1 (zh) | 增强型背側照明的近紅外圖像傳感器 | |
| GB2523740B (en) | Image encoding and display | |
| GB2523555B (en) | Image encoding and display | |
| GB201512492D0 (en) | Infrared sensing devices and methods | |
| HK1213086A1 (zh) | 圖像傳感器像素及多色圖像傳感器像素 | |
| HK1216802A1 (zh) | 圖像傳感器及用於圖像傳感器製造的方法 | |
| HK1212818A1 (zh) | 圖像傳感器像素及圖像傳感器 | |
| GB201403389D0 (en) | Sensor | |
| TWI563254B (en) | Sensor | |
| GB201404107D0 (en) | Infrared sensor module | |
| HK1210319A1 (zh) | 平面布局最佳化的堆棧式影像傳感器及其方法 | |
| GB2524044B (en) | CMOS Image sensor | |
| EP3141927A4 (en) | Distance image sensor | |
| EP3506355A4 (en) | DISTANCE SENSOR AND DISTANCE IMAGE SENSOR | |
| EP3133811A4 (en) | Image sensor and monitoring system | |
| GB201607956D0 (en) | Image sensor | |
| EP3235242A4 (en) | Image capturing device and sensing protection device | |
| TWI561085B (en) | Color image sensor and operating method thereof | |
| EP3133805A4 (en) | Image sensor and monitoring system | |
| TWI562342B (en) | Image sensing device | |
| GB201407477D0 (en) | Infrared sensor package | |
| EP3178399A4 (en) | Image sensor and oral sensor device using same | |
| GB201412136D0 (en) | Sensor | |
| HK1217571A1 (zh) | 圖像傳感器像素及製造所述圖像傳感器像素的方法 |