FR3049767B1 - Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons - Google Patents

Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons Download PDF

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Publication number
FR3049767B1
FR3049767B1 FR1652960A FR1652960A FR3049767B1 FR 3049767 B1 FR3049767 B1 FR 3049767B1 FR 1652960 A FR1652960 A FR 1652960A FR 1652960 A FR1652960 A FR 1652960A FR 3049767 B1 FR3049767 B1 FR 3049767B1
Authority
FR
France
Prior art keywords
image sensor
pixel image
active pixel
cmos technology
electron multiplication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1652960A
Other languages
English (en)
Other versions
FR3049767A1 (fr
Inventor
Frederic MAYER
Mathieu Fournier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Teledyne e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS, Teledyne e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR1652960A priority Critical patent/FR3049767B1/fr
Priority to PCT/EP2017/057683 priority patent/WO2017174456A1/fr
Publication of FR3049767A1 publication Critical patent/FR3049767A1/fr
Application granted granted Critical
Publication of FR3049767B1 publication Critical patent/FR3049767B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR1652960A 2016-04-05 2016-04-05 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons Expired - Fee Related FR3049767B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1652960A FR3049767B1 (fr) 2016-04-05 2016-04-05 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons
PCT/EP2017/057683 WO2017174456A1 (fr) 2016-04-05 2017-03-31 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1652960 2016-04-05
FR1652960A FR3049767B1 (fr) 2016-04-05 2016-04-05 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons

Publications (2)

Publication Number Publication Date
FR3049767A1 FR3049767A1 (fr) 2017-10-06
FR3049767B1 true FR3049767B1 (fr) 2018-03-16

Family

ID=56802536

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1652960A Expired - Fee Related FR3049767B1 (fr) 2016-04-05 2016-04-05 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons

Country Status (2)

Country Link
FR (1) FR3049767B1 (fr)
WO (1) WO2017174456A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3127329B1 (fr) 2021-09-17 2024-01-26 St Microelectronics Crolles 2 Sas Pixel d'image et de profondeur

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087898A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 画像信号読み出し回路
AU2006344741B2 (en) 2006-06-19 2011-07-07 Halliburton Energy Services, Inc. Antenna cutout in a downhole tubular
FR2973162B1 (fr) 2011-03-23 2013-11-22 E2V Semiconductors Capteur d'image a tres haute dynamique
FR2973160B1 (fr) * 2011-03-23 2013-03-29 E2V Semiconductors Capteur d'image a multiplication d'electrons

Also Published As

Publication number Publication date
WO2017174456A1 (fr) 2017-10-12
FR3049767A1 (fr) 2017-10-06

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