FR3031237B1 - Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons - Google Patents

Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons

Info

Publication number
FR3031237B1
FR3031237B1 FR1463367A FR1463367A FR3031237B1 FR 3031237 B1 FR3031237 B1 FR 3031237B1 FR 1463367 A FR1463367 A FR 1463367A FR 1463367 A FR1463367 A FR 1463367A FR 3031237 B1 FR3031237 B1 FR 3031237B1
Authority
FR
France
Prior art keywords
image sensor
pixel image
active pixel
cmos technology
electron multiplication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1463367A
Other languages
English (en)
Other versions
FR3031237A1 (fr
Inventor
Pierre Fereyre
Frederic Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR1463367A priority Critical patent/FR3031237B1/fr
Priority to US15/540,054 priority patent/US20170358616A1/en
Priority to PCT/EP2015/079833 priority patent/WO2016107735A1/fr
Priority to EP15820069.1A priority patent/EP3241235A1/fr
Priority to TW104142956A priority patent/TW201635511A/zh
Publication of FR3031237A1 publication Critical patent/FR3031237A1/fr
Application granted granted Critical
Publication of FR3031237B1 publication Critical patent/FR3031237B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR1463367A 2014-12-29 2014-12-29 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons Expired - Fee Related FR3031237B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1463367A FR3031237B1 (fr) 2014-12-29 2014-12-29 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons
US15/540,054 US20170358616A1 (en) 2014-12-29 2015-12-15 Active pixel image sensor based on cmos technology with electron multiplication
PCT/EP2015/079833 WO2016107735A1 (fr) 2014-12-29 2015-12-15 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons
EP15820069.1A EP3241235A1 (fr) 2014-12-29 2015-12-15 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons
TW104142956A TW201635511A (zh) 2014-12-29 2015-12-21 使用ｃｍｏｓ技術之具有電子倍增的主動像素圖像感測器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1463367A FR3031237B1 (fr) 2014-12-29 2014-12-29 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons

Publications (2)

Publication Number Publication Date
FR3031237A1 FR3031237A1 (fr) 2016-07-01
FR3031237B1 true FR3031237B1 (fr) 2016-12-23

Family

ID=53200041

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1463367A Expired - Fee Related FR3031237B1 (fr) 2014-12-29 2014-12-29 Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons

Country Status (5)

Country Link
US (1) US20170358616A1 (fr)
EP (1) EP3241235A1 (fr)
FR (1) FR3031237B1 (fr)
TW (1) TW201635511A (fr)
WO (1) WO2016107735A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4212623B2 (ja) * 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
JP2008060550A (ja) * 2006-07-31 2008-03-13 Sanyo Electric Co Ltd 撮像装置
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
FR2973160B1 (fr) * 2011-03-23 2013-03-29 E2V Semiconductors Capteur d'image a multiplication d'electrons
JP5573978B2 (ja) * 2012-02-09 2014-08-20 株式会社デンソー 固体撮像素子およびその駆動方法

Also Published As

Publication number Publication date
TW201635511A (zh) 2016-10-01
EP3241235A1 (fr) 2017-11-08
WO2016107735A1 (fr) 2016-07-07
US20170358616A1 (en) 2017-12-14
FR3031237A1 (fr) 2016-07-01

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