FR3031237B1 - Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons - Google Patents
Capteur d'image a pixels actifs en technologie cmos a multiplication d'electronsInfo
- Publication number
- FR3031237B1 FR3031237B1 FR1463367A FR1463367A FR3031237B1 FR 3031237 B1 FR3031237 B1 FR 3031237B1 FR 1463367 A FR1463367 A FR 1463367A FR 1463367 A FR1463367 A FR 1463367A FR 3031237 B1 FR3031237 B1 FR 3031237B1
- Authority
- FR
- France
- Prior art keywords
- image sensor
- pixel image
- active pixel
- cmos technology
- electron multiplication
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1463367A FR3031237B1 (fr) | 2014-12-29 | 2014-12-29 | Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons |
PCT/EP2015/079833 WO2016107735A1 (fr) | 2014-12-29 | 2015-12-15 | Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons |
US15/540,054 US20170358616A1 (en) | 2014-12-29 | 2015-12-15 | Active pixel image sensor based on cmos technology with electron multiplication |
EP15820069.1A EP3241235A1 (fr) | 2014-12-29 | 2015-12-15 | Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons |
TW104142956A TW201635511A (zh) | 2014-12-29 | 2015-12-21 | 使用cmos技術之具有電子倍增的主動像素圖像感測器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1463367A FR3031237B1 (fr) | 2014-12-29 | 2014-12-29 | Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3031237A1 FR3031237A1 (fr) | 2016-07-01 |
FR3031237B1 true FR3031237B1 (fr) | 2016-12-23 |
Family
ID=53200041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1463367A Expired - Fee Related FR3031237B1 (fr) | 2014-12-29 | 2014-12-29 | Capteur d'image a pixels actifs en technologie cmos a multiplication d'electrons |
Country Status (5)
Country | Link |
---|---|
US (1) | US20170358616A1 (fr) |
EP (1) | EP3241235A1 (fr) |
FR (1) | FR3031237B1 (fr) |
TW (1) | TW201635511A (fr) |
WO (1) | WO2016107735A1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4212623B2 (ja) * | 2006-01-31 | 2009-01-21 | 三洋電機株式会社 | 撮像装置 |
JP2008060550A (ja) * | 2006-07-31 | 2008-03-13 | Sanyo Electric Co Ltd | 撮像装置 |
JP5568880B2 (ja) * | 2008-04-03 | 2014-08-13 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および電子機器 |
FR2973160B1 (fr) * | 2011-03-23 | 2013-03-29 | E2V Semiconductors | Capteur d'image a multiplication d'electrons |
JP5573978B2 (ja) * | 2012-02-09 | 2014-08-20 | 株式会社デンソー | 固体撮像素子およびその駆動方法 |
-
2014
- 2014-12-29 FR FR1463367A patent/FR3031237B1/fr not_active Expired - Fee Related
-
2015
- 2015-12-15 US US15/540,054 patent/US20170358616A1/en not_active Abandoned
- 2015-12-15 EP EP15820069.1A patent/EP3241235A1/fr not_active Withdrawn
- 2015-12-15 WO PCT/EP2015/079833 patent/WO2016107735A1/fr active Application Filing
- 2015-12-21 TW TW104142956A patent/TW201635511A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20170358616A1 (en) | 2017-12-14 |
FR3031237A1 (fr) | 2016-07-01 |
EP3241235A1 (fr) | 2017-11-08 |
TW201635511A (zh) | 2016-10-01 |
WO2016107735A1 (fr) | 2016-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB201621800D0 (en) | Segmenting content displayed on a computing device into regions based on pixels of a screenshot image that captures the content | |
HK1221818A1 (zh) | 具有多個存儲節點的圖像傳感器像素 | |
HK1209901A1 (en) | Big small pixel scheme for image sensors and its uses | |
ZA201908211B (en) | Image sensor structure | |
EP3127044A4 (fr) | Capteur d'empreinte digitale à capacité répartie avec des pixels amplifiés actifs | |
GB2548445B (en) | RGBZ pixel cell unit for an RGBZ image sensor | |
HK1213086A1 (zh) | 圖像傳感器像素及多色圖像傳感器像素 | |
HK1212818A1 (zh) | 圖像傳感器像素及圖像傳感器 | |
HK1207473A1 (en) | Image sensor pixel for high dynamic range image sensor | |
GB2577353B (en) | A pixel unit, image sensor and camera | |
FR2973160B1 (fr) | Capteur d'image a multiplication d'electrons | |
EP2948815A4 (fr) | Dispositif optique de correction, dispositif de correction de déviation d'image et dispositif d'imagerie | |
EP3249439A4 (fr) | Système catadioptrique et dispositif de capture d'image | |
EP3358820A4 (fr) | Dispositif de formation d'image, dispositif de traitement d'image et dispositif d'affichage | |
FR3027732B1 (fr) | Capteur d'image a electrodes verticales | |
SG10201603687RA (en) | Solid-state image sensor and camera | |
EP3266045A4 (fr) | Réinitialisation sans porte pour pixels de capteur d'image | |
GB2524044B (en) | CMOS Image sensor | |
GB201817739D0 (en) | Cmos pixel, image sensor and camera, and method for reading a cmos pixel | |
FR3030885B1 (fr) | Capteur d'image en couleurs avec pixels blancs et pixels colores | |
HK1209233A1 (en) | Image sensor and pixels including vertical overflow drain | |
HK1219597A1 (zh) | 擁有具有交錯光電二極管的像素單元的圖像傳感器 | |
IL249255A0 (en) | An electron bombarded ccd or cmos imaging sensor with high resolution and high quantum efficiency | |
FR3038194B1 (fr) | Correction de pixels parasites dans un capteur d'image infrarouge | |
IL273442B1 (en) | Bayer matrix type image sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20160701 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
CD | Change of name or company name |
Owner name: TELEDYNE E2V SEMICONDUCTORS SAS, FR Effective date: 20180907 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
ST | Notification of lapse |
Effective date: 20220808 |