JP2014526771A - プラズマ源 - Google Patents
プラズマ源 Download PDFInfo
- Publication number
- JP2014526771A JP2014526771A JP2014528885A JP2014528885A JP2014526771A JP 2014526771 A JP2014526771 A JP 2014526771A JP 2014528885 A JP2014528885 A JP 2014528885A JP 2014528885 A JP2014528885 A JP 2014528885A JP 2014526771 A JP2014526771 A JP 2014526771A
- Authority
- JP
- Japan
- Prior art keywords
- filament
- housing
- plasma
- plasma source
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 238000009429 electrical wiring Methods 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32045—Circuits specially adapted for controlling the glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
- H01J37/32064—Circuits specially adapted for controlling the arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
J=AGT2e−W/kT
その際、Jは電流密度、Tは温度、Wは電子の仕事関数を示す。
Claims (6)
- プラズマを生成するための真空室に配置されるプラズマ源であって、前記真空室内に侵入する開口部を有するハウジングを前記プラズマ源が備え、絶縁されて前記ハウジング内に通される電気配線を介して加熱電圧が印加可能であるフィラメントが前記ハウジング内に設けられており、これにより前記フィラメントが電流により加熱可能であるプラズマ源において、前記ハウジングが前記真空室から電気的に絶縁されてこれに配置されており、前記電気配線と前記ハウジングとの間の電圧降下Ufloatを測定可能である手段が設けられており、測定された値Ufloatを制御信号として処理可能であるよう構成されている加熱電圧の制御手段が設けられていることを特徴とするプラズマ源。
- 請求項1に記載のプラズマ源を多数有する装置において、前記プラズマ源がそれぞれ少なくとも1つのプラズマ源コイルに囲まれており、前記プラズマ源が、処理高さまで延伸する複数のプラズマ源を備える外側コイルに囲まれていることを特徴とする装置。
- 請求項1または2に記載の装置において、加熱電圧が少なくとも1つのスイッチング電源により加えられ、その際好適には放電に必要な放電電圧Udiscが、中心でフィラメントに対向して印加されることを特徴とする装置。
- 真空室内でプラズマを生成するための方法であって、前記真空室にハウジングとフィラメントとを有するプラズマ源が配置されており、プラズマの持続のため前記ハウジングが前記真空室と前記フィラメントに対して浮遊電位、すなわちフロート状態で保持され、プラズマの持続のためフィラメントと内部でプラズマが燃焼するハウジングとの間の電位降下が測定され、測定された電位降下が前記フィラメントに印加される加熱電圧の制御に使用され、前記加熱電圧により前記フィラメントを熱する電流、そして電子放出がもたらされる方法。
- 請求項3に記載の方法において、前記加熱電圧が、ハウジングとフィラメントとの間の電位降下が実質的に一定に保持されるよう制御されることを特徴とする方法。
- 請求項3および4のいずれか一項に記載の方法において、ハウジングとフィラメントとの間の電位降下が0Vから−10Vの間の値に保持されることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011112759A DE102011112759A1 (de) | 2011-09-08 | 2011-09-08 | Plasmaquelle |
DE102011112759.7 | 2011-09-08 | ||
PCT/EP2012/003623 WO2013034258A1 (de) | 2011-09-08 | 2012-08-29 | Plasmaquelle |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014526771A true JP2014526771A (ja) | 2014-10-06 |
JP6251676B2 JP6251676B2 (ja) | 2017-12-20 |
Family
ID=46980879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014528885A Active JP6251676B2 (ja) | 2011-09-08 | 2012-08-29 | プラズマ源 |
Country Status (21)
Country | Link |
---|---|
US (1) | US9226379B2 (ja) |
EP (1) | EP2754167B1 (ja) |
JP (1) | JP6251676B2 (ja) |
KR (1) | KR102028767B1 (ja) |
CN (1) | CN103765551B (ja) |
AR (1) | AR087804A1 (ja) |
BR (1) | BR112014004654B1 (ja) |
CA (1) | CA2846679C (ja) |
DE (1) | DE102011112759A1 (ja) |
DK (1) | DK2754167T3 (ja) |
ES (1) | ES2704708T3 (ja) |
HU (1) | HUE040659T2 (ja) |
IN (1) | IN2014DN01967A (ja) |
MX (1) | MX340593B (ja) |
MY (1) | MY172720A (ja) |
PL (1) | PL2754167T3 (ja) |
RU (1) | RU2622048C2 (ja) |
SG (1) | SG2014013429A (ja) |
SI (1) | SI2754167T1 (ja) |
TR (1) | TR201900085T4 (ja) |
WO (1) | WO2013034258A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0536370A (ja) * | 1991-07-26 | 1993-02-12 | Origin Electric Co Ltd | イオン源における電力供給装置 |
JPH0574395A (ja) * | 1991-09-18 | 1993-03-26 | Hitachi Ltd | 電子源システム及びその制御法 |
JPH05275047A (ja) * | 1992-03-23 | 1993-10-22 | Tokyo Electron Ltd | イオン注入装置 |
JPH0676773A (ja) * | 1992-05-26 | 1994-03-18 | Balzers Ag | 低圧放電の発生及び点弧方法並びに真空加工装置及び該装置の陰極チェンバ |
JP2004362901A (ja) * | 2003-06-04 | 2004-12-24 | Sharp Corp | イオンドーピング装置、イオンドーピング方法および半導体装置 |
JP2009217985A (ja) * | 2008-03-07 | 2009-09-24 | Mitsui Eng & Shipbuild Co Ltd | イオン源 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3956666A (en) * | 1975-01-27 | 1976-05-11 | Ion Tech, Inc. | Electron-bombardment ion sources |
US4301391A (en) * | 1979-04-26 | 1981-11-17 | Hughes Aircraft Company | Dual discharge plasma device |
US4647818A (en) * | 1984-04-16 | 1987-03-03 | Sfe Technologies | Nonthermionic hollow anode gas discharge electron beam source |
JPS6343240A (ja) * | 1986-08-07 | 1988-02-24 | Seiko Instr & Electronics Ltd | イオン源 |
JPH01267943A (ja) * | 1988-04-19 | 1989-10-25 | Agency Of Ind Science & Technol | イオン源装置 |
US4910435A (en) * | 1988-07-20 | 1990-03-20 | American International Technologies, Inc. | Remote ion source plasma electron gun |
US5198677A (en) * | 1991-10-11 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | Production of N+ ions from a multicusp ion beam apparatus |
US5523652A (en) * | 1994-09-26 | 1996-06-04 | Eaton Corporation | Microwave energized ion source for ion implantation |
US6388381B2 (en) * | 1996-09-10 | 2002-05-14 | The Regents Of The University Of California | Constricted glow discharge plasma source |
US6137231A (en) * | 1996-09-10 | 2000-10-24 | The Regents Of The University Of California | Constricted glow discharge plasma source |
JP2965293B1 (ja) * | 1998-11-10 | 1999-10-18 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
JP3414380B2 (ja) * | 2000-11-14 | 2003-06-09 | 日新電機株式会社 | イオンビーム照射方法ならびに関連の方法および装置 |
US6454910B1 (en) * | 2001-09-21 | 2002-09-24 | Kaufman & Robinson, Inc. | Ion-assisted magnetron deposition |
US6724160B2 (en) * | 2002-04-12 | 2004-04-20 | Kaufman & Robinson, Inc. | Ion-source neutralization with a hot-filament cathode-neutralizer |
US7138768B2 (en) * | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
WO2004027825A2 (en) * | 2002-09-19 | 2004-04-01 | Applied Process Technologies, Inc. | Beam plasma source |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
JP2004165034A (ja) | 2002-11-14 | 2004-06-10 | Nissin Electric Co Ltd | イオン源のフィラメント寿命予測方法およびイオン源装置 |
US7038389B2 (en) * | 2003-05-02 | 2006-05-02 | Applied Process Technologies, Inc. | Magnetron plasma source |
KR20080048433A (ko) * | 2006-11-28 | 2008-06-02 | 가부시키가이샤 쇼와 신쿠 | 하전 입자 조사 장치, 하전 입자 제어 방법 및 주파수 조정장치 |
BRPI0722169A2 (pt) * | 2007-11-01 | 2014-04-08 | Oerlikon Trading Ag | Processo para a fabricação de uma superfície tratada, e fontes de plasma a vácuo |
US7843138B2 (en) * | 2008-06-11 | 2010-11-30 | Kaufman & Robinson, Inc. | Power supply for a hot-filament cathode |
-
2011
- 2011-09-08 DE DE102011112759A patent/DE102011112759A1/de not_active Withdrawn
-
2012
- 2012-08-29 MY MYPI2014000663A patent/MY172720A/en unknown
- 2012-08-29 PL PL12769011T patent/PL2754167T3/pl unknown
- 2012-08-29 RU RU2014113560A patent/RU2622048C2/ru active
- 2012-08-29 US US14/343,549 patent/US9226379B2/en active Active
- 2012-08-29 DK DK12769011.3T patent/DK2754167T3/en active
- 2012-08-29 IN IN1967DEN2014 patent/IN2014DN01967A/en unknown
- 2012-08-29 BR BR112014004654-9A patent/BR112014004654B1/pt active IP Right Grant
- 2012-08-29 SG SG2014013429A patent/SG2014013429A/en unknown
- 2012-08-29 WO PCT/EP2012/003623 patent/WO2013034258A1/de active Application Filing
- 2012-08-29 JP JP2014528885A patent/JP6251676B2/ja active Active
- 2012-08-29 MX MX2014002777A patent/MX340593B/es active IP Right Grant
- 2012-08-29 SI SI201231494T patent/SI2754167T1/sl unknown
- 2012-08-29 TR TR2019/00085T patent/TR201900085T4/tr unknown
- 2012-08-29 ES ES12769011T patent/ES2704708T3/es active Active
- 2012-08-29 KR KR1020147006192A patent/KR102028767B1/ko active IP Right Grant
- 2012-08-29 EP EP12769011.3A patent/EP2754167B1/de active Active
- 2012-08-29 CA CA2846679A patent/CA2846679C/en active Active
- 2012-08-29 CN CN201280043726.2A patent/CN103765551B/zh active Active
- 2012-08-29 HU HUE12769011A patent/HUE040659T2/hu unknown
- 2012-09-07 AR ARP120103300A patent/AR087804A1/es active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0536370A (ja) * | 1991-07-26 | 1993-02-12 | Origin Electric Co Ltd | イオン源における電力供給装置 |
JPH0574395A (ja) * | 1991-09-18 | 1993-03-26 | Hitachi Ltd | 電子源システム及びその制御法 |
JPH05275047A (ja) * | 1992-03-23 | 1993-10-22 | Tokyo Electron Ltd | イオン注入装置 |
JPH0676773A (ja) * | 1992-05-26 | 1994-03-18 | Balzers Ag | 低圧放電の発生及び点弧方法並びに真空加工装置及び該装置の陰極チェンバ |
JP2004362901A (ja) * | 2003-06-04 | 2004-12-24 | Sharp Corp | イオンドーピング装置、イオンドーピング方法および半導体装置 |
JP2009217985A (ja) * | 2008-03-07 | 2009-09-24 | Mitsui Eng & Shipbuild Co Ltd | イオン源 |
Also Published As
Publication number | Publication date |
---|---|
DK2754167T3 (en) | 2019-01-21 |
WO2013034258A1 (de) | 2013-03-14 |
DE102011112759A1 (de) | 2013-03-14 |
US9226379B2 (en) | 2015-12-29 |
JP6251676B2 (ja) | 2017-12-20 |
HUE040659T2 (hu) | 2019-03-28 |
MY172720A (en) | 2019-12-11 |
RU2622048C2 (ru) | 2017-06-09 |
BR112014004654A2 (pt) | 2017-03-28 |
MX2014002777A (es) | 2014-12-05 |
EP2754167B1 (de) | 2018-10-10 |
CN103765551A (zh) | 2014-04-30 |
CA2846679C (en) | 2019-10-22 |
SG2014013429A (en) | 2014-07-30 |
AR087804A1 (es) | 2014-04-16 |
BR112014004654B1 (pt) | 2021-09-21 |
CA2846679A1 (en) | 2013-03-14 |
KR20140074288A (ko) | 2014-06-17 |
MX340593B (es) | 2016-07-15 |
EP2754167A1 (de) | 2014-07-16 |
SI2754167T1 (sl) | 2019-02-28 |
KR102028767B1 (ko) | 2019-10-04 |
US20140217892A1 (en) | 2014-08-07 |
ES2704708T3 (es) | 2019-03-19 |
IN2014DN01967A (ja) | 2015-05-15 |
TR201900085T4 (tr) | 2019-02-21 |
CN103765551B (zh) | 2016-07-06 |
PL2754167T3 (pl) | 2019-03-29 |
RU2014113560A (ru) | 2015-10-20 |
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