MX2014002777A - Fuente de plasma. - Google Patents
Fuente de plasma.Info
- Publication number
- MX2014002777A MX2014002777A MX2014002777A MX2014002777A MX2014002777A MX 2014002777 A MX2014002777 A MX 2014002777A MX 2014002777 A MX2014002777 A MX 2014002777A MX 2014002777 A MX2014002777 A MX 2014002777A MX 2014002777 A MX2014002777 A MX 2014002777A
- Authority
- MX
- Mexico
- Prior art keywords
- plasma source
- filament
- source housing
- source
- potential drop
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32045—Circuits specially adapted for controlling the glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
- H01J37/32064—Circuits specially adapted for controlling the arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
La presente invención se relaciona con una fuente de plasma que se coloca de una manera flotante en una cámara de vacío, donde la fuente de plasma comprende un alojamiento de fuente, y un filamento se proporciona en el alojamiento de fuente y se coloca para estar aislado del mismo, donde se proporcionan los medios para medir la disminución de potencial entre el alojamiento de fuente y el filamento. La disminución de potencial medida puede usarse para regular el voltaje que calienta el filamento. De acuerdo con la invención, se proporcionan los medios correspondientes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011112759A DE102011112759A1 (de) | 2011-09-08 | 2011-09-08 | Plasmaquelle |
PCT/EP2012/003623 WO2013034258A1 (de) | 2011-09-08 | 2012-08-29 | Plasmaquelle |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2014002777A true MX2014002777A (es) | 2014-12-05 |
MX340593B MX340593B (es) | 2016-07-15 |
Family
ID=46980879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2014002777A MX340593B (es) | 2011-09-08 | 2012-08-29 | Fuente de plasma. |
Country Status (21)
Country | Link |
---|---|
US (1) | US9226379B2 (es) |
EP (1) | EP2754167B1 (es) |
JP (1) | JP6251676B2 (es) |
KR (1) | KR102028767B1 (es) |
CN (1) | CN103765551B (es) |
AR (1) | AR087804A1 (es) |
BR (1) | BR112014004654B1 (es) |
CA (1) | CA2846679C (es) |
DE (1) | DE102011112759A1 (es) |
DK (1) | DK2754167T3 (es) |
ES (1) | ES2704708T3 (es) |
HU (1) | HUE040659T2 (es) |
IN (1) | IN2014DN01967A (es) |
MX (1) | MX340593B (es) |
MY (1) | MY172720A (es) |
PL (1) | PL2754167T3 (es) |
RU (1) | RU2622048C2 (es) |
SG (1) | SG2014013429A (es) |
SI (1) | SI2754167T1 (es) |
TR (1) | TR201900085T4 (es) |
WO (1) | WO2013034258A1 (es) |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3956666A (en) * | 1975-01-27 | 1976-05-11 | Ion Tech, Inc. | Electron-bombardment ion sources |
US4301391A (en) * | 1979-04-26 | 1981-11-17 | Hughes Aircraft Company | Dual discharge plasma device |
US4647818A (en) * | 1984-04-16 | 1987-03-03 | Sfe Technologies | Nonthermionic hollow anode gas discharge electron beam source |
JPS6343240A (ja) * | 1986-08-07 | 1988-02-24 | Seiko Instr & Electronics Ltd | イオン源 |
JPH01267943A (ja) * | 1988-04-19 | 1989-10-25 | Agency Of Ind Science & Technol | イオン源装置 |
US4910435A (en) * | 1988-07-20 | 1990-03-20 | American International Technologies, Inc. | Remote ion source plasma electron gun |
JPH0536370A (ja) * | 1991-07-26 | 1993-02-12 | Origin Electric Co Ltd | イオン源における電力供給装置 |
JPH0574395A (ja) * | 1991-09-18 | 1993-03-26 | Hitachi Ltd | 電子源システム及びその制御法 |
US5198677A (en) * | 1991-10-11 | 1993-03-30 | The United States Of America As Represented By The United States Department Of Energy | Production of N+ ions from a multicusp ion beam apparatus |
JPH05275047A (ja) * | 1992-03-23 | 1993-10-22 | Tokyo Electron Ltd | イオン注入装置 |
CH687111A5 (de) * | 1992-05-26 | 1996-09-13 | Balzers Hochvakuum | Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens. |
US5523652A (en) * | 1994-09-26 | 1996-06-04 | Eaton Corporation | Microwave energized ion source for ion implantation |
US6388381B2 (en) * | 1996-09-10 | 2002-05-14 | The Regents Of The University Of California | Constricted glow discharge plasma source |
US6137231A (en) * | 1996-09-10 | 2000-10-24 | The Regents Of The University Of California | Constricted glow discharge plasma source |
JP2965293B1 (ja) * | 1998-11-10 | 1999-10-18 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
JP3414380B2 (ja) * | 2000-11-14 | 2003-06-09 | 日新電機株式会社 | イオンビーム照射方法ならびに関連の方法および装置 |
US6454910B1 (en) * | 2001-09-21 | 2002-09-24 | Kaufman & Robinson, Inc. | Ion-assisted magnetron deposition |
US6724160B2 (en) * | 2002-04-12 | 2004-04-20 | Kaufman & Robinson, Inc. | Ion-source neutralization with a hot-filament cathode-neutralizer |
US7138768B2 (en) * | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
WO2004027825A2 (en) * | 2002-09-19 | 2004-04-01 | Applied Process Technologies, Inc. | Beam plasma source |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
JP2004165034A (ja) | 2002-11-14 | 2004-06-10 | Nissin Electric Co Ltd | イオン源のフィラメント寿命予測方法およびイオン源装置 |
US7038389B2 (en) * | 2003-05-02 | 2006-05-02 | Applied Process Technologies, Inc. | Magnetron plasma source |
JP2004362901A (ja) * | 2003-06-04 | 2004-12-24 | Sharp Corp | イオンドーピング装置、イオンドーピング方法および半導体装置 |
KR20080048433A (ko) * | 2006-11-28 | 2008-06-02 | 가부시키가이샤 쇼와 신쿠 | 하전 입자 조사 장치, 하전 입자 제어 방법 및 주파수 조정장치 |
BRPI0722169A2 (pt) * | 2007-11-01 | 2014-04-08 | Oerlikon Trading Ag | Processo para a fabricação de uma superfície tratada, e fontes de plasma a vácuo |
JP4463310B2 (ja) * | 2008-03-07 | 2010-05-19 | 三井造船株式会社 | イオン源 |
US7843138B2 (en) * | 2008-06-11 | 2010-11-30 | Kaufman & Robinson, Inc. | Power supply for a hot-filament cathode |
-
2011
- 2011-09-08 DE DE102011112759A patent/DE102011112759A1/de not_active Withdrawn
-
2012
- 2012-08-29 MY MYPI2014000663A patent/MY172720A/en unknown
- 2012-08-29 PL PL12769011T patent/PL2754167T3/pl unknown
- 2012-08-29 RU RU2014113560A patent/RU2622048C2/ru active
- 2012-08-29 US US14/343,549 patent/US9226379B2/en active Active
- 2012-08-29 DK DK12769011.3T patent/DK2754167T3/en active
- 2012-08-29 IN IN1967DEN2014 patent/IN2014DN01967A/en unknown
- 2012-08-29 BR BR112014004654-9A patent/BR112014004654B1/pt active IP Right Grant
- 2012-08-29 SG SG2014013429A patent/SG2014013429A/en unknown
- 2012-08-29 WO PCT/EP2012/003623 patent/WO2013034258A1/de active Application Filing
- 2012-08-29 JP JP2014528885A patent/JP6251676B2/ja active Active
- 2012-08-29 MX MX2014002777A patent/MX340593B/es active IP Right Grant
- 2012-08-29 SI SI201231494T patent/SI2754167T1/sl unknown
- 2012-08-29 TR TR2019/00085T patent/TR201900085T4/tr unknown
- 2012-08-29 ES ES12769011T patent/ES2704708T3/es active Active
- 2012-08-29 KR KR1020147006192A patent/KR102028767B1/ko active IP Right Grant
- 2012-08-29 EP EP12769011.3A patent/EP2754167B1/de active Active
- 2012-08-29 CA CA2846679A patent/CA2846679C/en active Active
- 2012-08-29 CN CN201280043726.2A patent/CN103765551B/zh active Active
- 2012-08-29 HU HUE12769011A patent/HUE040659T2/hu unknown
- 2012-09-07 AR ARP120103300A patent/AR087804A1/es active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DK2754167T3 (en) | 2019-01-21 |
WO2013034258A1 (de) | 2013-03-14 |
DE102011112759A1 (de) | 2013-03-14 |
US9226379B2 (en) | 2015-12-29 |
JP6251676B2 (ja) | 2017-12-20 |
HUE040659T2 (hu) | 2019-03-28 |
MY172720A (en) | 2019-12-11 |
RU2622048C2 (ru) | 2017-06-09 |
BR112014004654A2 (pt) | 2017-03-28 |
EP2754167B1 (de) | 2018-10-10 |
CN103765551A (zh) | 2014-04-30 |
CA2846679C (en) | 2019-10-22 |
SG2014013429A (en) | 2014-07-30 |
AR087804A1 (es) | 2014-04-16 |
BR112014004654B1 (pt) | 2021-09-21 |
CA2846679A1 (en) | 2013-03-14 |
KR20140074288A (ko) | 2014-06-17 |
MX340593B (es) | 2016-07-15 |
EP2754167A1 (de) | 2014-07-16 |
SI2754167T1 (sl) | 2019-02-28 |
KR102028767B1 (ko) | 2019-10-04 |
US20140217892A1 (en) | 2014-08-07 |
ES2704708T3 (es) | 2019-03-19 |
JP2014526771A (ja) | 2014-10-06 |
IN2014DN01967A (es) | 2015-05-15 |
TR201900085T4 (tr) | 2019-02-21 |
CN103765551B (zh) | 2016-07-06 |
PL2754167T3 (pl) | 2019-03-29 |
RU2014113560A (ru) | 2015-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration |