SG10201509659UA - Rf-powered, temperature-controlled gas diffuser - Google Patents
Rf-powered, temperature-controlled gas diffuserInfo
- Publication number
- SG10201509659UA SG10201509659UA SG10201509659UA SG10201509659UA SG10201509659UA SG 10201509659U A SG10201509659U A SG 10201509659UA SG 10201509659U A SG10201509659U A SG 10201509659UA SG 10201509659U A SG10201509659U A SG 10201509659UA SG 10201509659U A SG10201509659U A SG 10201509659UA
- Authority
- SG
- Singapore
- Prior art keywords
- powered
- temperature
- gas diffuser
- controlled gas
- diffuser
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24H—FLUID HEATERS, e.g. WATER OR AIR HEATERS, HAVING HEAT-GENERATING MEANS, e.g. HEAT PUMPS, IN GENERAL
- F24H3/00—Air heaters
- F24H3/002—Air heaters using electric energy supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Thermal Sciences (AREA)
- Combustion & Propulsion (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261651881P | 2012-05-25 | 2012-05-25 | |
| US13/900,627 US20130316094A1 (en) | 2012-05-25 | 2013-05-23 | Rf-powered, temperature-controlled gas diffuser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201509659UA true SG10201509659UA (en) | 2015-12-30 |
Family
ID=49621823
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013041207A SG195505A1 (en) | 2012-05-25 | 2013-05-27 | Rf-powered, temperature-controlled gas diffuser |
| SG10202112308WA SG10202112308WA (en) | 2012-05-25 | 2013-05-27 | Rf-powered, temperature-controlled gas diffuser |
| SG10201509659UA SG10201509659UA (en) | 2012-05-25 | 2013-05-27 | Rf-powered, temperature-controlled gas diffuser |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013041207A SG195505A1 (en) | 2012-05-25 | 2013-05-27 | Rf-powered, temperature-controlled gas diffuser |
| SG10202112308WA SG10202112308WA (en) | 2012-05-25 | 2013-05-27 | Rf-powered, temperature-controlled gas diffuser |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20130316094A1 (en) |
| KR (6) | KR102140345B1 (en) |
| SG (3) | SG195505A1 (en) |
| TW (1) | TWI608549B (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101327458B1 (en) * | 2012-01-10 | 2013-11-08 | 주식회사 유진테크 | Showerhead having cooling system and substrate processing apparatus including the showerhead |
| TWI654333B (en) * | 2013-12-18 | 2019-03-21 | 美商蘭姆研究公司 | Semiconductor substrate processing apparatus including uniformity baffles |
| US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
| JP6868616B2 (en) * | 2015-10-08 | 2021-05-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Shower head with reduced plasma ignition on the back |
| US10373794B2 (en) | 2015-10-29 | 2019-08-06 | Lam Research Corporation | Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber |
| JP1575661S (en) * | 2015-11-24 | 2017-05-08 | ||
| US10313641B2 (en) | 2015-12-04 | 2019-06-04 | Google Llc | Shift register with reduced wiring complexity |
| US10533251B2 (en) | 2015-12-31 | 2020-01-14 | Lam Research Corporation | Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus |
| US10190216B1 (en) | 2017-07-25 | 2019-01-29 | Lam Research Corporation | Showerhead tilt mechanism |
| US10943768B2 (en) * | 2018-04-20 | 2021-03-09 | Applied Materials, Inc. | Modular high-frequency source with integrated gas distribution |
| KR20220018591A (en) * | 2019-06-07 | 2022-02-15 | 램 리써치 코포레이션 | Independently tunable flow path conductance in multi-station semiconductor processing |
| USD1013750S1 (en) * | 2020-09-18 | 2024-02-06 | Ksm Component Co., Ltd. | Ceramic heater |
| USD1012997S1 (en) * | 2020-09-18 | 2024-01-30 | Ksm Component Co., Ltd. | Ceramic heater |
| USD1012998S1 (en) * | 2020-09-18 | 2024-01-30 | Ksm Component Co., Ltd. | Ceramic heater |
| USD998112S1 (en) * | 2020-12-08 | 2023-09-05 | Bromic Pty Limited | Heater |
| WO2024039613A1 (en) * | 2022-08-16 | 2024-02-22 | Eugenus, Inc. | Temperature-controlled showerhead assembly for cyclic vapor deposition |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2467741A (en) * | 1947-09-30 | 1949-04-19 | Westinghouse Electric Corp | Heat exchange apparatus |
| US2642857A (en) * | 1949-03-30 | 1953-06-23 | Leo N Walter | Forced air flow air heating furnace |
| US2646033A (en) * | 1950-08-24 | 1953-07-21 | Domenico A Marro | Air-heating furnace with baffled annular air-heating passageway |
| EP1698642B1 (en) * | 2003-12-26 | 2008-12-24 | Shin-Etsu Chemical Co., Ltd. | Process for producing vinyl chloride polymer |
| KR200454281Y1 (en) * | 2007-10-16 | 2011-06-23 | 노벨러스 시스템즈, 인코포레이티드 | Temperature controlled showerhead |
| US8673080B2 (en) * | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US9034142B2 (en) * | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
-
2013
- 2013-05-23 US US13/900,627 patent/US20130316094A1/en not_active Abandoned
- 2013-05-24 KR KR1020130059345A patent/KR102140345B1/en active IP Right Grant
- 2013-05-27 TW TW102118638A patent/TWI608549B/en active
- 2013-05-27 SG SG2013041207A patent/SG195505A1/en unknown
- 2013-05-27 SG SG10202112308WA patent/SG10202112308WA/en unknown
- 2013-05-27 SG SG10201509659UA patent/SG10201509659UA/en unknown
-
2020
- 2020-07-27 KR KR1020200093067A patent/KR102222837B1/en active IP Right Grant
-
2021
- 2021-02-25 KR KR1020210025472A patent/KR102385547B1/en active IP Right Grant
- 2021-12-29 KR KR1020210190675A patent/KR20220002838A/en not_active IP Right Cessation
-
2022
- 2022-11-09 KR KR1020220148599A patent/KR20220156495A/en not_active Application Discontinuation
-
2023
- 2023-02-27 KR KR1020230025591A patent/KR20230035545A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201411736A (en) | 2014-03-16 |
| US20130316094A1 (en) | 2013-11-28 |
| KR102140345B1 (en) | 2020-08-03 |
| KR20130132330A (en) | 2013-12-04 |
| KR102222837B1 (en) | 2021-03-04 |
| KR20220156495A (en) | 2022-11-25 |
| SG195505A1 (en) | 2013-12-30 |
| KR20230035545A (en) | 2023-03-14 |
| KR20220002838A (en) | 2022-01-07 |
| KR20210025558A (en) | 2021-03-09 |
| KR102385547B1 (en) | 2022-04-11 |
| SG10202112308WA (en) | 2021-12-30 |
| KR20200095434A (en) | 2020-08-10 |
| TWI608549B (en) | 2017-12-11 |
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