JP2014524098A - 動的メモリデバイスの細粒度セルフリフレッシュ制御を容易にするための機構 - Google Patents

動的メモリデバイスの細粒度セルフリフレッシュ制御を容易にするための機構 Download PDF

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JP2014524098A
JP2014524098A JP2014518868A JP2014518868A JP2014524098A JP 2014524098 A JP2014524098 A JP 2014524098A JP 2014518868 A JP2014518868 A JP 2014518868A JP 2014518868 A JP2014518868 A JP 2014518868A JP 2014524098 A JP2014524098 A JP 2014524098A
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refresh
cell
data
policy
auxiliary
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JP2014524098A5 (https=
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ロジャー アイザック
アラン ルバーグ
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シリコン イメージ，インコーポレイテッド
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2014518868A 2011-06-30 2012-06-22 動的メモリデバイスの細粒度セルフリフレッシュ制御を容易にするための機構 Pending JP2014524098A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/173,302 US9159396B2 (en) 2011-06-30 2011-06-30 Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices
US13/173,302 2011-06-30
PCT/US2012/043727 WO2013003223A2 (en) 2011-06-30 2012-06-22 Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices

Publications (2)

Publication Number Publication Date
JP2014524098A true JP2014524098A (ja) 2014-09-18
JP2014524098A5 JP2014524098A5 (https=) 2015-08-06

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JP2014518868A Pending JP2014524098A (ja) 2011-06-30 2012-06-22 動的メモリデバイスの細粒度セルフリフレッシュ制御を容易にするための機構

Country Status (7)

Country Link
US (1) US9159396B2 (https=)
EP (1) EP2727113A4 (https=)
JP (1) JP2014524098A (https=)
KR (1) KR20140047094A (https=)
CN (1) CN103688311B (https=)
TW (1) TWI564891B (https=)
WO (1) WO2013003223A2 (https=)

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JP2018093398A (ja) * 2016-12-05 2018-06-14 株式会社デンソー 制御装置

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JP2015041395A (ja) 2013-08-20 2015-03-02 キヤノン株式会社 情報処理装置及びその制御方法、並びに、そのプログラムと記憶媒体
KR102372888B1 (ko) 2015-06-15 2022-03-10 삼성전자주식회사 저장 장치의 온도별 데이터 관리 방법
US10783950B2 (en) 2015-09-02 2020-09-22 Nvidia Corporation Memory management systems and methods using a management communication bus
US10937484B2 (en) * 2015-12-30 2021-03-02 International Business Machines Corporation Dynamic bandwidth throttling of DRAM accesses for memory tracing
CN105679360A (zh) * 2016-01-05 2016-06-15 上海新储集成电路有限公司 一种可刷新的非易失性存储器及其刷新方法
CN108369818B (zh) * 2016-03-09 2024-01-30 华为技术有限公司 一种闪存设备的刷新方法和装置
US10332579B2 (en) * 2017-11-30 2019-06-25 Nanya Technology Corporation DRAM and method for operating the same
US10236035B1 (en) * 2017-12-04 2019-03-19 Nanya Technology Corporation DRAM memory device adjustable refresh rate method to alleviate effects of row hammer events
US10446246B2 (en) * 2018-03-14 2019-10-15 Silicon Storage Technology, Inc. Method and apparatus for data refresh for analog non-volatile memory in deep learning neural network
US10978136B2 (en) * 2019-07-18 2021-04-13 Apple Inc. Dynamic refresh rate control
KR102816799B1 (ko) * 2019-10-30 2025-06-09 삼성전자주식회사 동작 온도에 기초하여 동작 주기를 조절하는 메모리 장치
US11195568B1 (en) 2020-08-12 2021-12-07 Samsung Electronics Co., Ltd. Methods and systems for controlling refresh operations of a memory device
EP4002368A4 (en) 2020-09-22 2022-05-25 Changxin Memory Technologies, Inc. MEMORY DATA REFRESHMENT PROCEDURES AND CONTROL THEREOF AND STORAGE
US11520661B1 (en) * 2021-07-12 2022-12-06 Apple Inc. Scheduling of data refresh in a memory based on decoding latencies

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JPS55125662A (en) * 1979-03-22 1980-09-27 Fujitsu Ltd Semiconductor integrated circuit
JPS63121197A (ja) * 1986-11-07 1988-05-25 Fujitsu Ltd 半導体記憶装置
JPH065075A (ja) * 1992-06-24 1994-01-14 Fujitsu Ltd ダイナミック半導体メモリ装置
US6366516B1 (en) * 2000-12-29 2002-04-02 Intel Corporation Memory subsystem employing pool of refresh candidates
JP2002157898A (ja) * 2000-11-15 2002-05-31 Mitsubishi Electric Corp 半導体集積回路
US20040233706A1 (en) * 2003-02-19 2004-11-25 Burgan John M. Variable refresh control for a memory
US20120243299A1 (en) * 2011-03-23 2012-09-27 Jeng-Jye Shau Power efficient dynamic random access memory devices

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TW501012B (en) * 2001-01-09 2002-09-01 Silicon Integrated Sys Corp Method and apparatus of event-driven based refresh for high performance memory controller
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DE10134090A1 (de) * 2001-07-13 2003-01-30 Infineon Technologies Ag Speicher und Verfahren zum Ersetzen von fehlerhaften Speicherzellen in demselben
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ATE431958T1 (de) * 2004-10-21 2009-06-15 Nxp Bv Speicherbaustein und verfahren zur bereitstellung eines auf einer mittleren schwelle basierenden auffrischmechanismus
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FR2903219A1 (fr) * 2006-07-03 2008-01-04 St Microelectronics Sa Procede de rafraichissement d'un memoire vive dynamique et dispositif de memoire vive dynamique correspondant,en particulier incorpore dans un telephone mobile cellulaire
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JPS55125662A (en) * 1979-03-22 1980-09-27 Fujitsu Ltd Semiconductor integrated circuit
JPS63121197A (ja) * 1986-11-07 1988-05-25 Fujitsu Ltd 半導体記憶装置
JPH065075A (ja) * 1992-06-24 1994-01-14 Fujitsu Ltd ダイナミック半導体メモリ装置
JP2002157898A (ja) * 2000-11-15 2002-05-31 Mitsubishi Electric Corp 半導体集積回路
US6366516B1 (en) * 2000-12-29 2002-04-02 Intel Corporation Memory subsystem employing pool of refresh candidates
US20040233706A1 (en) * 2003-02-19 2004-11-25 Burgan John M. Variable refresh control for a memory
JP2006518531A (ja) * 2003-02-19 2006-08-10 フリースケール セミコンダクター インコーポレイテッド メモリのための可変リフレッシュ制御
US20120243299A1 (en) * 2011-03-23 2012-09-27 Jeng-Jye Shau Power efficient dynamic random access memory devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018093398A (ja) * 2016-12-05 2018-06-14 株式会社デンソー 制御装置

Also Published As

Publication number Publication date
EP2727113A4 (en) 2015-03-18
WO2013003223A2 (en) 2013-01-03
KR20140047094A (ko) 2014-04-21
TW201301279A (zh) 2013-01-01
CN103688311A (zh) 2014-03-26
EP2727113A2 (en) 2014-05-07
US20130007357A1 (en) 2013-01-03
TWI564891B (zh) 2017-01-01
CN103688311B (zh) 2017-10-13
WO2013003223A3 (en) 2013-03-21
US9159396B2 (en) 2015-10-13

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