KR20140047094A - 동적 메모리 디바이스들에 대해 미세 입도 셀프-리프레시 제어를 용이하게 하기 위한 메커니즘 - Google Patents

동적 메모리 디바이스들에 대해 미세 입도 셀프-리프레시 제어를 용이하게 하기 위한 메커니즘 Download PDF

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Publication number
KR20140047094A
KR20140047094A KR20147002152A KR20147002152A KR20140047094A KR 20140047094 A KR20140047094 A KR 20140047094A KR 20147002152 A KR20147002152 A KR 20147002152A KR 20147002152 A KR20147002152 A KR 20147002152A KR 20140047094 A KR20140047094 A KR 20140047094A
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South Korea
Prior art keywords
cells
refresh
data
supplemental
policy
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KR20147002152A
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English (en)
Korean (ko)
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로저 아이삭
앨런 루버그
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실리콘 이미지, 인크.
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Application filed by 실리콘 이미지, 인크. filed Critical 실리콘 이미지, 인크.
Publication of KR20140047094A publication Critical patent/KR20140047094A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR20147002152A 2011-06-30 2012-06-22 동적 메모리 디바이스들에 대해 미세 입도 셀프-리프레시 제어를 용이하게 하기 위한 메커니즘 Ceased KR20140047094A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/173,302 US9159396B2 (en) 2011-06-30 2011-06-30 Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices
US13/173,302 2011-06-30
PCT/US2012/043727 WO2013003223A2 (en) 2011-06-30 2012-06-22 Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices

Publications (1)

Publication Number Publication Date
KR20140047094A true KR20140047094A (ko) 2014-04-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR20147002152A Ceased KR20140047094A (ko) 2011-06-30 2012-06-22 동적 메모리 디바이스들에 대해 미세 입도 셀프-리프레시 제어를 용이하게 하기 위한 메커니즘

Country Status (7)

Country Link
US (1) US9159396B2 (https=)
EP (1) EP2727113A4 (https=)
JP (1) JP2014524098A (https=)
KR (1) KR20140047094A (https=)
CN (1) CN103688311B (https=)
TW (1) TWI564891B (https=)
WO (1) WO2013003223A2 (https=)

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KR20210052710A (ko) * 2019-10-30 2021-05-11 삼성전자주식회사 동작 온도에 기초하여 동작 주기를 조절하는 메모리 장치
KR20220019051A (ko) * 2019-07-18 2022-02-15 애플 인크. 동적 리프레시 레이트 제어
KR20220114095A (ko) * 2018-03-14 2022-08-17 실리콘 스토리지 테크놀로지 인크 심층 학습 신경망에서 아날로그 비휘발성 메모리를 위한 데이터 리프레쉬 방법 및 장치

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JP2015041395A (ja) 2013-08-20 2015-03-02 キヤノン株式会社 情報処理装置及びその制御方法、並びに、そのプログラムと記憶媒体
KR102372888B1 (ko) 2015-06-15 2022-03-10 삼성전자주식회사 저장 장치의 온도별 데이터 관리 방법
US10783950B2 (en) 2015-09-02 2020-09-22 Nvidia Corporation Memory management systems and methods using a management communication bus
US10937484B2 (en) * 2015-12-30 2021-03-02 International Business Machines Corporation Dynamic bandwidth throttling of DRAM accesses for memory tracing
CN105679360A (zh) * 2016-01-05 2016-06-15 上海新储集成电路有限公司 一种可刷新的非易失性存储器及其刷新方法
CN108369818B (zh) * 2016-03-09 2024-01-30 华为技术有限公司 一种闪存设备的刷新方法和装置
JP6772797B2 (ja) * 2016-12-05 2020-10-21 株式会社デンソー 制御装置
US10332579B2 (en) * 2017-11-30 2019-06-25 Nanya Technology Corporation DRAM and method for operating the same
US10236035B1 (en) * 2017-12-04 2019-03-19 Nanya Technology Corporation DRAM memory device adjustable refresh rate method to alleviate effects of row hammer events
US11195568B1 (en) 2020-08-12 2021-12-07 Samsung Electronics Co., Ltd. Methods and systems for controlling refresh operations of a memory device
EP4002368A4 (en) 2020-09-22 2022-05-25 Changxin Memory Technologies, Inc. MEMORY DATA REFRESHMENT PROCEDURES AND CONTROL THEREOF AND STORAGE
US11520661B1 (en) * 2021-07-12 2022-12-06 Apple Inc. Scheduling of data refresh in a memory based on decoding latencies

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US6269039B1 (en) * 2000-04-04 2001-07-31 International Business Machines Corp. System and method for refreshing memory devices
JP2002157898A (ja) * 2000-11-15 2002-05-31 Mitsubishi Electric Corp 半導体集積回路
US6366516B1 (en) * 2000-12-29 2002-04-02 Intel Corporation Memory subsystem employing pool of refresh candidates
TW501012B (en) * 2001-01-09 2002-09-01 Silicon Integrated Sys Corp Method and apparatus of event-driven based refresh for high performance memory controller
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JP2002373489A (ja) 2001-06-15 2002-12-26 Mitsubishi Electric Corp 半導体記憶装置
DE10134090A1 (de) * 2001-07-13 2003-01-30 Infineon Technologies Ag Speicher und Verfahren zum Ersetzen von fehlerhaften Speicherzellen in demselben
DE602004018646D1 (de) * 2003-01-29 2009-02-05 St Microelectronics Sa Verfahren zum Auffrischen eines DRAM und dazugehörige DRAM-Vorrichtung, insbesondere in ein zellulares Mobiltelefon eingebaut
US6781908B1 (en) 2003-02-19 2004-08-24 Freescale Semiconductor, Inc. Memory having variable refresh control and method therefor
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US7177220B2 (en) * 2004-05-07 2007-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Refresh counter with dynamic tracking of process, voltage and temperature variation for semiconductor memory
ATE431958T1 (de) * 2004-10-21 2009-06-15 Nxp Bv Speicherbaustein und verfahren zur bereitstellung eines auf einer mittleren schwelle basierenden auffrischmechanismus
JP4824936B2 (ja) 2005-03-10 2011-11-30 株式会社日立製作所 ダイナミック・ランダム・アクセス・メモリ装置の検査方法
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KR100800145B1 (ko) 2006-05-22 2008-02-01 주식회사 하이닉스반도체 셀프 리프레쉬 주기 제어 회로 및 그 방법
FR2903219A1 (fr) * 2006-07-03 2008-01-04 St Microelectronics Sa Procede de rafraichissement d'un memoire vive dynamique et dispositif de memoire vive dynamique correspondant,en particulier incorpore dans un telephone mobile cellulaire
US7742355B2 (en) * 2007-12-20 2010-06-22 Agere Systems Inc. Dynamic random access memory with low-power refresh
US7990795B2 (en) * 2009-02-19 2011-08-02 Freescale Semiconductor, Inc. Dynamic random access memory (DRAM) refresh
US20120243299A1 (en) * 2011-03-23 2012-09-27 Jeng-Jye Shau Power efficient dynamic random access memory devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220114095A (ko) * 2018-03-14 2022-08-17 실리콘 스토리지 테크놀로지 인크 심층 학습 신경망에서 아날로그 비휘발성 메모리를 위한 데이터 리프레쉬 방법 및 장치
KR20220019051A (ko) * 2019-07-18 2022-02-15 애플 인크. 동적 리프레시 레이트 제어
KR20210052710A (ko) * 2019-10-30 2021-05-11 삼성전자주식회사 동작 온도에 기초하여 동작 주기를 조절하는 메모리 장치

Also Published As

Publication number Publication date
EP2727113A4 (en) 2015-03-18
WO2013003223A2 (en) 2013-01-03
TW201301279A (zh) 2013-01-01
CN103688311A (zh) 2014-03-26
EP2727113A2 (en) 2014-05-07
JP2014524098A (ja) 2014-09-18
US20130007357A1 (en) 2013-01-03
TWI564891B (zh) 2017-01-01
CN103688311B (zh) 2017-10-13
WO2013003223A3 (en) 2013-03-21
US9159396B2 (en) 2015-10-13

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